TRANSISTOR D1616 Search Results

TRANSISTOR D1616 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SC6026MFV		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR D1616 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: DATA SHEET COMPOUND TRANSISTOR AN1A3Q on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 1.0 kΩ, R2 = 10 kΩ) • Complementary transistor with AA1A3Q ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)	Original		PDF
Contextual Info: DATA SHEET COMPOUND TRANSISTOR AN1A3Q on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 1.0 kΩ, R2 = 10 kΩ) • Complementary transistor with AA1A3Q ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)	Original	15ace	PDF
Contextual Info: DATA SHEET COMPOUND TRANSISTOR AN1L3M on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 4.7 kΩ, R2 = 4.7 kΩ) • Complementary transistor with AA1L3M ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)	Original		PDF
Contextual Info: DATA SHEET COMPOUND TRANSISTOR AA1L3N on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 4.7 kΩ, R2 = 10 kΩ) • Complementary transistor with AN1L3N ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)	Original		PDF
D1616A Abstract: d1616 a D1616 transistor d1616a TRANSISTOR D1616 MMBT1616A MMBT1616 D1616 marking transistor MMBT1616AL utc 1616 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT1616/A NPN SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR 3 DESCRIPTION * Audio frequency power amplifier * Medium speed switching 1 2 SOT-23 *Pb-free plating product number: MMBT1616L/MMBT16AL ORDERING INFORMATION Order Number	Original	MMBT1616/A OT-23 MMBT1616L/MMBT16AL MMBT1616-x-AE3-R MMBT1616L-x-AE3-R MMBT1616A-x-AE3-R MMBT1616AL-x-AE3-R D1616A d1616 a D1616 transistor d1616a TRANSISTOR D1616 MMBT1616A MMBT1616 D1616 marking transistor MMBT1616AL utc 1616	PDF
D1616A Abstract: utc d1616a d1616 transistor d1616a TRANSISTOR D1616 640 TRANSISTOR NPN d1616 transistor D1616A g npn switching transistor Ic 100mA UTC d1616 Contextual Info: UTC 2SD1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION Audio frequency power amplifier Medium speed switching 1 TO-92 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Tstg -55 ~+150	Original	2SD1616/A D1616 D1616A width10ms, QW-R201-008 D1616A utc d1616a d1616 transistor d1616a TRANSISTOR D1616 640 TRANSISTOR NPN d1616 transistor D1616A g npn switching transistor Ic 100mA UTC d1616	PDF
utc d1616a Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR 3 DESCRIPTION  * Audio frequency power amplifier * Medium speed switching 2 1 SOT-23 JEDEC TO-236  ORDERING INFORMATION Order Number Note: MMBT1616G-x-AE3-R	Original	MMBT1616/A OT-23 O-236) MMBT1616G-x-AE3-R MMBT1616AG-x-AE3-R MMBT1616L-x-AE3-R MMBT1616 utc d1616a	PDF
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
AA1L3N Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
a9hv Abstract: a14hv MCS-51 with adc and eeprom A13HV 80c31 rs232 d1616 TRANSISTOR D1616 80C31 80C32 E12E Contextual Info: W78E354 MONITOR MICROCONTROLLER GENERAL DESCRIPTION The W78E354 is a stand-alone high-performance microcontroller ASIC specially designed for use in monitor control applications. Using the Winbond 0.8µ DPDM process, the W78E354 integrates an embedded 8031 microcontroller core, 16K bytes of Flash cell, 512 bytes of RAM and a number of	Original	W78E354 W78E354 12/8-bit a9hv a14hv MCS-51 with adc and eeprom A13HV 80c31 rs232 d1616 TRANSISTOR D1616 80C31 80C32 E12E	PDF