TRANSISTOR D1711 Search Results

insulator nec

Abstract: 2sb772 nec 2SB772 all ic books in transistor 3569
Contextual Info: DATA SHEET PNP SILICON POWER TRANSISTOR 2SB772 PNP SILICON POWER TRANSISTOR DESCRIPTION PACKAGE DRAWING Unit: mm The 2SB772 is PNP silicon transistor suited for the output stage of 3 W audio amplifier, voltage regulator, DC-DC converter and relay driver.

2SB772 by Nec

Abstract: 2SB772 Nec 2SB772
Contextual Info: DATA SHEET PNP SILICON POWER TRANSISTOR 2SB772 PNP SILICON POWER TRANSISTOR PACKAGE DRAWING Unit: mm DESCRIPTION The 2SB772 is PNP silicon transistor suited for the output stage of 3 W audio amplifier, voltage regulator, DC-DC converter and relay driver.

2sd882 nec

Abstract: nec 2sd882 2SD882 transistor 2sd882
Contextual Info: DATA SHEET NPN SILICON POWER TRANSISTOR 2SD882 NPN SILICON POWER TRANSISTOR DESCRIPTION PACKAGE DRAWING Unit: mm The 2SD882 is NPN silicon transistor suited for the output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver.

NEC C11531E

Abstract: 2SA812 2SC1623 C11531E C1984
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SA812 PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to 2SC1623 • High DC Current Gain: hFE = 200 TYP. (VCE = −6.0 V, IC = −1.0 mA) ) • High Voltage: VCEO = −50 V +0.1

d1711

Abstract: C11531E 2SK1283 2SK1283,
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1283 SWITCHING N-CHANNEL POWER MOS FET PACKAGE DRAWING Unit: mm DESCRIPTION The 2SK1283 is N-channel MOS Field Effect Transistor designed or solenoid, motor and lamp driver. 8.5 MAX. 3.2 ±0.2 2.8 MAX. FEATURES 12 TYP.

d1711

Abstract: NEC C11531E 2SK1283 C11531E
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1283 SWITCHING N-CHANNEL POWER MOS FET PACKAGE DRAWING Unit: mm DESCRIPTION The 2SK1283 is N-channel MOS Field Effect Transistor designed or solenoid, motor and lamp driver. 8.5 MAX. 3.2 ±0.2 2.8 MAX. FEATURES 12 TYP.

d1711

Abstract: 2SK1285 C11531E
Contextual Info: DATA SHEET N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1285 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK1285 is N-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. 8.5 MAX. 3.2 ±0.2 2.8 MAX.

2SC945 typical application

Abstract: 2sc945 TRANSISTOR 2Sc945 2SC945 Q equivalent Contact Electronics Equivalent to transistor 2sc945 how to check ic ship 2SC945 DATASHEET 2Sc945 equivalent PA33
Contextual Info: DATA SHEET NPN SILICON TRANSISTOR 2SC945 NPN SILICON TRANSISTOR DESCRIPTION The 2SC945 is designed for use in driver stage of AF amplifier and low speed switching. PACKAGE DRAWING Unit: mm φ 5.2 MAX. 5.5 MAX. FEATURES 12.7 MIN. • High voltage LVCEO = 50 V MIN.

2SC945A

Abstract: 2SC945A Q 2SC945A P 2SC945A C 2SC945A K PA33 2SC94
Contextual Info: DATA SHEET NPN SILICON TRANSISTOR 2SC945A NPN SILICON TRANSISTOR DESCRIPTION The 2SC945A is designed for use in driver stage of AF amplifier and low speed switching. PACKAGE DRAWING Unit: mm φ 5.2 MAX. 5.5 MAX. FEATURES 12.7 MIN. • High voltage LVCEO = 50 V MIN.

C1984

Abstract: 2SC1623
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC1623 NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • High DC Current Gain: hFE = 200 TYP. (VCE = 6.0 V, IC = 1.0 mA) • High Voltage: VCEO = 50 V 0.4 +0.1 –0.05 2.8 ±0.2 +0.1 0.65 –0.15

2SC1623

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC1623 NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES <R> PACKAGE DRAWING Unit: mm • High DC Current Gain: hFE = 200 TYP. (VCE = 6.0 V, IC = 1.0 mA) • High Voltage: VCEO = 50 V 0.4 +0.1 –0.05 2.8 ± 0.2 +0.1 0.65 –0.15

2SA812

Abstract: 2SC1623
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SA812 PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD <R> PACKAGE DRAWING Unit: mm 0.4 +0.1 –0.05 2.8 ± 0.2 2 1 3 Marking 1. Emitter 2. Base 3. Collector 0 to 0.1 1.1 to 1.4 0.16 +0.1 –0.06 0.3 TYP. 2.9 ± 0.2 VCBO −60 V

2SC945A

Abstract: VCEO50 2SC945A Q PA33 k1981 20057
Contextual Info: データ・シート シリコン・トランジスタ Silicon Transistor 2SC945A NPNエピタキシアル形シリコン・トランジスタ 低周波増幅用 特 外形図（単位：mm） 長 ○低周波増幅，低速度スイッチング，100 mAまでの各種ド

2SC1623

Abstract: 2SA81 2SA812 transistor 2sa812 npn
Contextual Info: データ・シート シリコン・トランジスタ Silicon Transistor 2SC1623 NPNエピタキシアル形シリコン・トランジスタ 低周波増幅用 外形図（単位：mm） ○超小形外形であり，ハイブリッドIC用として最適です。

2SB772

Abstract: 2sb772 renesas Transistor 2sb772 2sb772 nec
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

you isd electronics

Abstract: 2SK1283 C11531E
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2sd882 nec

Abstract: 2SD882 nec 2sd882
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

D1711

Abstract: 2SA812 2SC1623
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SC945A

Abstract: d1711 PA33 2SC945A Q
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid