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    TRANSISTOR D408 Search Results

    TRANSISTOR D408 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR D408 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    D408

    Abstract: D408 transistor d408 be transistor d408 diode d408 TRANSISTOR aoD408 AOD408L
    Contextual Info: AOD408 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD408 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOD408 is Pbfree (meets ROHS & Sony 259 specifications).


    Original     		AOD408 AOD408 AOD408L O-252 PD-00085 D408 D408 transistor d408 be transistor d408 diode d408 TRANSISTOR aoD408 PDF

    schematic diagram tv sony 21 trinitron

    Abstract: cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112
    Contextual Info: SERVICE MANUAL MODEL COMMANDER DEST. CHASSIS NO. KV-EF34M80 RM-951 SCC-U28D-A Vietnam BG-3S CHASSIS MODEL COMMANDER DEST. CHASSIS NO. TRINITRON COLOR TV KV-EF34M80 RM-951 SPECIFICATIONS Note Power requirements 110-240 V AC, 50/60 Hz Power consumption W Indicated on the rear of the TV


    Original     		KV-EF34M80 RM-951 SCC-U28D-A NA324-M3 A80LPD10X) SBX3005-01 RM-951) schematic diagram tv sony 21 trinitron cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112 PDF

    FX3G-24M

    Abstract: FX3G-14M mitsubishi plc FX3g 40m communication FX3G24M FX3G-40M mitsubishi MODBUS RTU mitsubishi plc FX3g 60m communication mitsubishi plc FX3g FX3G24M CAD FX3G-60M
    Contextual Info: Specifications /// MITSUBISHI ELECTRIC Product Information EBG 196-EN Specifications FX3G-14M„ FX3G-24M„ I/O points Max. 128 direct addressing and max. 128 remote I/O Power supply FX3G 100–240 V AC +10 % / -15 % , 50/60 Hz Program memory 32,000 steps EEPROM (internal), exchangeable EEPROM memory cassette with loader function


    Original     		196-EN FX3G-14M FX3G-24M IL-49001 IL-42160 ZA-1600 D-40880 24743-A FX3G-24M FX3G-14M mitsubishi plc FX3g 40m communication FX3G24M FX3G-40M mitsubishi MODBUS RTU mitsubishi plc FX3g 60m communication mitsubishi plc FX3g FX3G24M CAD FX3G-60M PDF

    hatfield attenuator

    Abstract: RA60H1317M RA60H1317M-01 RA60H1317M-E01 RF MOSFET MODULE low voltage power transistor RF MODULE CIRCUIT DIAGRAM
    Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H1317M 135-175MHz 60W 12.5V MOBILE RADIO DESCRIPTION The RA60H1317M is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to


    Original     		RA60H1317M 135-175MHz RA60H1317M 60-watt 175-MHz hatfield attenuator RA60H1317M-01 RA60H1317M-E01 RF MOSFET MODULE low voltage power transistor RF MODULE CIRCUIT DIAGRAM PDF

    FX2N-128MR

    Abstract: FX2N-48MT Mitsubishi MELSEC FX2N-80MR FX2N 64mr manual FX2N-64MT Mitsubishi MELSEC FX2N-80MR-DS beijer make sc09 programming cable Melsec mitsubishi rs232 sc09 programming cable FX2N-16MR
    Contextual Info: MITSUBISHI ELECTRIC Programmable Logic Controllers 40 90 X IN 0 1 2 3 4 5 6 7 L COM X0 X2 X4 X6 X10 X12 X14 X16 24+ X1 X3 X5 X7 X11 X13 X15 X17 N POWER 0 1 2 3 4 5 6 7 IN 10 11 12 13 14 15 16 17 MELSEC FX0S, FX0N, FX2N POWER RUN BATT.V FX 2N-16EX OUT FX 2N-32MR


    Original     		2N-16EX 2N-32MR E-08014 D-40880 S-20123 H-1124 CH-8309 FX2N-128MR FX2N-48MT Mitsubishi MELSEC FX2N-80MR FX2N 64mr manual FX2N-64MT Mitsubishi MELSEC FX2N-80MR-DS beijer make sc09 programming cable Melsec mitsubishi rs232 sc09 programming cable FX2N-16MR PDF

    hatfield attenuator

    Abstract: RA30H4045MR-01 RA30H4045MR RF MOSFET MODULE RA30H4045MR-E01 50 watt transistor amplifier 6.1 circuit diagram RF MODULE CIRCUIT DIAGRAM
    Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4045MR 400-450MHz 30W 12.5V MOBILE RADIO DESCRIPTION The RA30H4045MR is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to


    Original     		RA30H4045MR 400-450MHz RA30H4045MR 30-watt 450-MHz hatfield attenuator RA30H4045MR-01 RF MOSFET MODULE RA30H4045MR-E01 50 watt transistor amplifier 6.1 circuit diagram RF MODULE CIRCUIT DIAGRAM PDF

    RA30H0608M-01

    Abstract: RA30H0608M-E01 hatfield attenuator RA30H0608M 7212 transistor RF MOSFET MODULE 50 watt transistor amplifier 6.1 circuit diagram
    Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H0608M 68-88MHz 30W 12.5V MOBILE RADIO DESCRIPTION The RA30H0608M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 68- to 88-MHz range.


    Original     		RA30H0608M 68-88MHz RA30H0608M 30-watt 88-MHz RA30H0608M-01 RA30H0608M-E01 hatfield attenuator 7212 transistor RF MOSFET MODULE 50 watt transistor amplifier 6.1 circuit diagram PDF

    mosfet amplifier

    Abstract: RA08H1317M RA08H1317M-01 RA08H1317M-E01
    Contextual Info: MITSUBISHI RF MOSFET MODULE RA08H1317M ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 135-175MHz 8W 12.5V PORTABLE/MOBILE RADIO DESCRIPTION The RA08H1317M is a 8-watt RF MOSFET Amplifier Module for 12.5-volt portable/ mobile radios that operate in the 135- to


    Original     		RA08H1317M 135-175MHz RA08H1317M 175-MHz mosfet amplifier RA08H1317M-01 RA08H1317M-E01 PDF

    H11S

    Abstract: RA06H8285M RA06H8285M-01
    Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA06H8285M 820-851MHz 6W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA06H8285MB is a 6-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 820- to


    Original     		RA06H8285M 820-851MHz RA06H8285MB 851-MHz H11S RA06H8285M RA06H8285M-01 PDF

    RA07N3340M

    Abstract: RA07N3340M-01
    Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07N3340M 330-400MHz 7.5W 9.6V 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07N3340M is a 7.5-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 330- to


    Original     		RA07N3340M 330-400MHz RA07N3340M 400-MHz RA07N3340M-01 PDF

    RA35H1516M

    Abstract: RA35H1516M-101
    Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA35H1516M RoHS Compliance , 154-162MHz 40W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to


    Original     		RA35H1516M 154-162MHz RA35H1516M 40-watt 162-MHz RA35H1516M-101 PDF

    RA30H4047M

    Abstract: RA30H4047M-E01 RA30H4047M-01 30H4047M
    Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4047M 400-470MHz 30W 12.5V MOBILE RADIO DESCRIPTION The RA30H4047M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to


    Original     		RA30H4047M 400-470MHz RA30H4047M 30-watt 470-MHz RA30H4047M-E01 RA30H4047M-01 30H4047M PDF

    RA07H3340

    Abstract: RA07H3340M-01
    Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07H3340M 330-400MHz 7W 12.5V, 2 Stage Amp. For PORTABLE/ MOBILE RADIO DESCRIPTION The RA07H3340M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt portable/ mobile radios that operate in the 330- to


    Original     		RA07H3340M 330-400MHz RA07H3340M 400-MHz nomina3-1-55685-739 I-20041 RA07H3340 RA07H3340M-01 PDF

    d408

    Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M1317M 135-175MHz 6.5W 7.2V PORTABLE RADIO DESCRIPTION The RA07M1317M is a 6.5-watt RF MOSFET Amplifier Module for 7.2-volt mobile radios that operate in the 135- to


    Original     		RA07M1317M 135-175MHz RA07M1317M 175-MHz I-20041 d408 PDF

    RA07M1317M

    Abstract: RA07M1317M-01
    Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M1317M 135-175MHz 6.5W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M1317M is a 6.5-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 135- to


    Original     		RA07M1317M 135-175MHz RA07M1317M 175-MHz RA07M1317M-01 PDF

    RA07H3340M

    Abstract: RA07H3340M-01
    Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07H3340M 330-400MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07H3340M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt portable radios that operate in the 330- to 400-MHz


    Original     		RA07H3340M 330-400MHz RA07H3340M 400-MHz RA07H3340M-01 PDF

    RA07H4452M

    Abstract: RA07H4452M-01
    Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07H4452M 440-520MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07H4452M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt portable radios that operate in the 440- to 520-MHz


    Original     		RA07H4452M 440-520MHz RA07H4452M 520-MHz RA07H4452M-01 PDF

    RA07N4047M

    Abstract: RA07N4047M-01 RA07N4047
    Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07N4047M 400-470MHz 7.5W 9.6V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07N4047M is a 7.5-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 400- to


    Original     		RA07N4047M 400-470MHz RA07N4047M 470-MHz RA07N4047M-01 RA07N4047 PDF

    H11S

    Abstract: RA13H8891MA RA13H8891MA-01 RA13H8891MA-E01
    Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MA 889-915MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MA is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 889- to


    Original     		RA13H8891MA 889-915MHz RA13H8891MA 13-watt 915-MHz H11S RA13H8891MA-01 RA13H8891MA-E01 PDF

    RA03M8894M

    Abstract: RA03M8894M-01 mitsubishi power module
    Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M8894M 889-941MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M8894M is a 3.6-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 889- to


    Original     		RA03M8894M 889-941MHz RA03M8894M 941-MHz RA03M8894M-01 mitsubishi power module PDF

    RA60H1317M-01

    Abstract: RA60H1317M
    Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H1317M 135-175MHz 60W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H1317M is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to


    Original     		RA60H1317M 135-175MHz RA60H1317M 60-watt 175-MHz RA60H1317M-01 PDF

    RA13H1317M

    Abstract: RA13H1317M-01
    Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H1317M 135-175MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H1317M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to


    Original     		RA13H1317M 135-175MHz RA13H1317M 13-watt 175-MHz RA13H1317M-01 PDF

    RA13H3340M

    Abstract: RA13H3340M-01
    Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H3340M 330-400MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H3340M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to


    Original     		RA13H3340M 330-400MHz RA13H3340M 13-watt 400-MHz RA13H3340M-01 PDF

    RA07M4452M

    Abstract: RA07M4452M-01
    Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M4452M 440-520MHz 7W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M4452M is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 440- to 520-MHz


    Original     		RA07M4452M 440-520MHz RA07M4452M 520-MHz RA07M4452M-01 PDF