TRANSISTOR D882 10 SP Search Results

TRANSISTOR D882 10 SP Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SC6026MFV		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

TRANSISTOR D882 10 SP Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: D882 YOUDA TRANSISTOR SI NPN TRANSISTOR—D882 PIN CONFIGURATIONS DESCRIPTION AND FEATURES Collector-Emitter voltage: BVCBO= 40V Collector current up to 3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage	Original		PDF
Contextual Info: D882 YOUDA TRANSISTOR Si NPN TRANSISTOR—D882 PIN CONFIGURATIONS DESCRIPTION AND FEATURES Collector-Emitter voltage: BVCBO= 40V Collector current up to 3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage	Original		PDF
D882 TRANSISTOR Abstract: D882 sot 89 D882 TRANSISTOR D882 br d882 TRANSISTOR br D882 TRANSISTOR D882 sot-89 D882 sot89 d882 power transistor transistor D882 datasheet Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT -89 Plastic-Encapsulate D882 TRANSISTOR NPN Transistors SOT-89 1. BASE FEATURES 2. COLLECTOR Power dissipation 1 2 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value	Original	OT-89 100mA 10MHz D882 TRANSISTOR D882 sot 89 D882 TRANSISTOR D882 br d882 TRANSISTOR br D882 TRANSISTOR D882 sot-89 D882 sot89 d882 power transistor transistor D882 datasheet	PDF
d882 to-92 Abstract: TRANSISTOR br D882 d882 y Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors D882 TRANSISTOR NPN TO-92 FEATURES 1.EMITTER Power dissipation 2.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage	Original	100mA 10MHz d882 to-92 TRANSISTOR br D882 d882 y	PDF
D882 TRANSISTOR PIN Abstract: D882 q D882 TRANSISTOR D882 TRANSISTOR D882 D882 SPECIFICATION h D882 D882 p J D882 transistor D882 datasheet Contextual Info: CYStech Electronics Corp. Spec. No. : C848T3-H Issued Date : 2002.08.18 Revised Date : 2005.09.16 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD882T3/S Features • Low VCE sat , typically 0.25V at IC / IB = 2A / 0.2A • Excellent current gain characteristics	Original	C848T3-H BTD882T3/S BTB772T3/S BTD882T3 O-126 UL94V-0 D882 TRANSISTOR PIN D882 q D882 TRANSISTOR D882 TRANSISTOR D882 D882 SPECIFICATION h D882 D882 p J D882 transistor D882 datasheet	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR NPN TO-126 FEATURES Power dissipation 1. EMITTER PCM: 1.25 W (Tamb=25℃) 2. COLLECTOR Collector current 3 A ICM: Collector-base voltage V V(BR)CBO: 40	Original	O-126 O-126 100mA 10MHz	PDF
TRANSISTOR D882 Abstract: transistor D882 datasheet D882 SPECIFICATION D882 TRANSISTOR PIN D882 d882 npn transistor h D882 D882 TRANSISTOR d882 equivalent marking d882 Contextual Info: CYStech Electronics Corp. Spec. No. : C848D3-H Issued Date : 2005.05.04 Revised Date : Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD882D3 Features • Low VCE sat , VCE(sat)=0.25 V (typical), at IC / IB = 2A / 200mA • Excellent current gain characteristics	Original	C848D3-H BTD882D3 200mA BTB772D3 O-126ML UL94V-0 TRANSISTOR D882 transistor D882 datasheet D882 SPECIFICATION D882 TRANSISTOR PIN D882 d882 npn transistor h D882 D882 TRANSISTOR d882 equivalent marking d882	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors D882 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 500 1 mW (Tamb=25℃) 2 3. EMITTER Collector current 3 A ICM: Collector-base voltage	Original	OT-89 OT-89 100mA 10MHz	PDF
D882 TRANSISTOR Abstract: transistor D882 D882 transistor D882 datasheet br d882 to-126 TRANSISTOR br D882 br d882 d882 power transistor datasheet d882 NPN TRANSISTOR D882 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR NPN TO-126 FEATURES Power dissipation 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage	Original	O-126 O-126 10MHz D882 TRANSISTOR transistor D882 D882 transistor D882 datasheet br d882 to-126 TRANSISTOR br D882 br d882 d882 power transistor datasheet d882 NPN TRANSISTOR D882	PDF
D882 TRANSISTOR Abstract: d882 to252 TO 252 D882 D882 TRANSISTOR br D882 TRANSISTOR D882 252 d882 transistor D882 to252 br d882 transistor D882 datasheet Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors TO-252 D882 TRANSISTOR NPN FEATURES 1. BASE Power dissipation 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage	Original	O-252 O-252 10MHz D882 TRANSISTOR d882 to252 TO 252 D882 D882 TRANSISTOR br D882 TRANSISTOR D882 252 d882 transistor D882 to252 br d882 transistor D882 datasheet	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR NPN TO-126 FEATURES Power Dissipation 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage	Original	O-126 O-126 10MHz	PDF
D882 TRANSISTOR Abstract: transistor D882 datasheet D882 p br d882 D882 br d882 p transistor "D882 p" TRANSISTOR D882 TRANSISTOR br D882 7400 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR（ NPN ） TO—126 FEATURES Power dissipation PCM : 1.25 W（Tamb=25℃） Collector current ICM : 3 A Collector-base voltage V BR CBO : 40 V Operating and storage junction temperature range	Original	O-126 O--126 Coll00 290TYP 090TYP D882 TRANSISTOR transistor D882 datasheet D882 p br d882 D882 br d882 p transistor "D882 p" TRANSISTOR D882 TRANSISTOR br D882 7400	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors D882 TO-126 TRANSISTOR NPN FEATURES Power dissipation PCM : 1. EMITTER 1.25 W ( Tamb=25℃ ) 2. COLLECTOR 3. BASE 123 MAXIMUM RATINGS* TA=25℃ unless otherwise noted	Original	O-126 O-126 100mA 10MHz	PDF
D882 Abstract: transistor D882 datasheet IC 6650 D882 TRANSISTOR br d882 J D882 transistor D882 h D882 datasheet d882 TRANSISTOR br D882 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors D882 TRANSISTOR（NPN） TO—251 FEATURES 1.BASE Power dissipation PCM : 1.25W（Tamb=25℃） Collector current ICM: 3A Collector-base voltage V BR CBO : 40V Operating and storage junction temperature range	Original	O-251 O--251 25WTamb Co200 091TYP 300TYP D882 transistor D882 datasheet IC 6650 D882 TRANSISTOR br d882 J D882 transistor D882 h D882 datasheet d882 TRANSISTOR br D882	PDF

D880 TRANSISTOR Abstract: Transistor D882 p38 D882 NEC nec d882 j692 NEC D882 P TRANSISTOR nec d882 p c829 transistor transistor D882 M 2Y d880 y Contextual Info: APPLICATION NOTE GTV4000 2Fh TV receiver with TDA9321H and TDA933xH AN98079 Philips Semiconductors GTV4000 2Fh TV receiver with TDA9321H and TDA933xH Application Note AN98079 Abstract An application of the TDA9321H High performance Input Processor and TDA933xH (High performance Output	Original	GTV4000 TDA9321H TDA933xH AN98079 GTV4000 TDA9321H D880 TRANSISTOR Transistor D882 p38 D882 NEC nec d882 j692 NEC D882 P TRANSISTOR nec d882 p c829 transistor transistor D882 M 2Y d880 y	PDF
secos gmbh Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649 Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers	Original	SGSR809-A SC-59 SGSR809-B SGSR809-C SGSR809-D SGSR809-E secos gmbh c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649	PDF
secos gmbh Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3	Original	SC-59 SGSR809-A SGSR809-B SGSR809-C SGSR809-D SGSR809-E secos gmbh SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA	PDF