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    TRANSISTOR D882 M 2Y Search Results

    TRANSISTOR D882 M 2Y Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

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    D880 TRANSISTOR

    Abstract: Transistor D882 p38 D882 NEC nec d882 j692 NEC D882 P TRANSISTOR nec d882 p c829 transistor transistor D882 M 2Y d880 y
    Text: APPLICATION NOTE GTV4000 2Fh TV receiver with TDA9321H and TDA933xH AN98079 Philips Semiconductors GTV4000 2Fh TV receiver with TDA9321H and TDA933xH Application Note AN98079 Abstract An application of the TDA9321H High performance Input Processor and TDA933xH (High performance Output


    Original     		PDF GTV4000 TDA9321H TDA933xH AN98079 GTV4000 TDA9321H D880 TRANSISTOR Transistor D882 p38 D882 NEC nec d882 j692 NEC D882 P TRANSISTOR nec d882 p c829 transistor transistor D882 M 2Y d880 y