TRANSISTOR EB 2030 Search Results
TRANSISTOR EB 2030 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 |
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TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold |
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TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold |
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TPCP8515 |
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NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 |
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TTC021 |
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NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini |
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TRANSISTOR EB 2030 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: MITSUBISHI TRANSISTOR MODULES QM300DY-24 HIGH POWER SWITCHING USE INSULATED TYPE QM300DY-24 lc Collector current. 300A Vcex Collector-emitter vo ltag e 1200V hFE DC current gain. 75 Insulated Type UL Recognized |
OCR Scan |
QM300DY-24 E80276 E80271 | |
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM50DY-24B MEDIUM POWER SWITCHING USE INSULATED TYPE QM50DY-24B Ic Collector current. 50A Vcex Collector-emitter voltage 1200V hFE DC current gain.750 Insulated Type UL Recognized |
OCR Scan |
QM50DY-24B E80276 E80271 | |
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM800HA-2HB HIGH POWER SWITCHING USE INSULATED TYPE QM800HA-2HB lc Collector current. 800A Vcex Collector-emitter vo ltag e 1000V hFE DC current gain.750 Insulated Type UL Recognized |
OCR Scan |
QM800HA-2HB E80276 E80271 | |
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM75DY-H HIGH POWER SWITCHING USE INSULATED TYPE QM75DY-H lc Collector current. 75A Vcex Collector-emitter voltage.600V hFE DC current gain. 75 Insulated Type UL Recognized |
OCR Scan |
QM75DY-H E80276 E80271 | |
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM100DY-2HK HIGH POWER SWITCHING USE INSULATED TYPE Q M 100DY-2HK lc Collector current. 100A Vcex Collector-emitter voltage 1000V hFE DC current gain. 75 Insulated Type UL Recognized |
OCR Scan |
QM100DY-2HK 100DY-2HK E80276 E80271 | |
transistor eb 2030Contextual Info: MITSUBISHI TRANSISTOR MODULES QM150DY-2HBK HIGH POWER SWITCHING USE INSULATED TYPE QM150DY-2HBK lc Collector current. 150A Vcex Collector-emitter voltage 1000V hFE DC current gain.750 Insulated Type UL Recognized |
OCR Scan |
QM150DY-2HBK E80276 E80271 transistor eb 2030 | |
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM30DY-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM30DY-HB Ic Collector current. 30A Vcex Collector-emitter voltage.600V hFE DC current gain. 750 Insulated Type |
OCR Scan |
QM30DY-HB E80276 E80271 60mA- | |
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM75DY-24 HIGH POWER SWITCHING USE INSULATED TYPE QM75DY-24 lc Collector current. 75A Vcex Collector-emitter voltage 1200V hFE DC current gain. 75 Insulated Type UL Recognized |
OCR Scan |
QM75DY-24 E80276 E80271 | |
transistor eb 2030Contextual Info: MITSUBISHI TRANSISTOR MODULES QM200DY-HB HIGH POWER SWITCHING USE INSULATED TYPE QM200DY-HB lc Collector current. 200A Vcex Collector-emitter voltage.600V hFE DC current gain. 750 Insulated Type |
OCR Scan |
QM200DY-HB E80276 E80271 transistor eb 2030 | |
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM500HA-H HIGH POWER SWITCHING USE INSULATED TYPE QM500HA-H lc Collector current. .500A V c e x Collector-emitter voltage. . 600V hFE DC current gain. 750 Insulated Type UL Recognized |
OCR Scan |
QM500HA-H E80276 E80271 | |
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM50DY-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM50DY-HB Ic Collector current. 50A Vcex Collector-emitter voltage.600V hFE DC current gain. 750 Insulated Type |
OCR Scan |
QM50DY-HB E80276 E80271 100mA | |
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM80DY-3H HIGH POWER SWITCHING USE INSULATED TYPE Q M 80DY-3H lc Collector current. 80A Vcex Collector-emitter voltage 1400V hFE DC current gain. 100 Insulated Type UL Recognized |
OCR Scan |
QM80DY-3H 80DY-3H E80276 E80271 | |
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM75DY-24B HIGH POWER SWITCHING USE INSULATED TYPE QM75DY-24B lc Collector current. 75A Vcex Collector-emitter voltage 1200V hFE DC current gain. 750 Insulated Type UL Recognized |
OCR Scan |
QM75DY-24B E80276 E80271 | |
QM50DY-HContextual Info: MITSUBISHI TRANSISTOR MODULES QM50DY-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM50DY-H Ic Collector current. 50A Vcex Collector-emitter voltage.600V hFE DC current gain. 75 Insulated Type |
OCR Scan |
QM50DY-H E80276 E80271 QM50DY-H | |
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Contextual Info: MITSUBISHI TRANSISTOR MODULES QM1000HA-24B HIGH POWER SWITCHING USE INSULATED TYPE APPLICATION AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM D im ensions in mm C Feb. 1999 ♦ MITSUBISHI ELECTRIC |
OCR Scan |
QM1000HA-24B QM1000H | |
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM30HY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE Q M 30HY-2H Ic Collector current. 30A Vcex Collector-emitter voltage 1000V hFE DC current gain. 75 Insulated Type UL Recognized |
OCR Scan |
QM30HY-2H 30HY-2H E80276 E80271 | |
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM300HA-24B HIGH POWER SWITCHING USE INSULATED TYPE QM300HA-24B lc Collector current. 300A Vcex Collector-emitter vo ltag e 1200V hFE DC current gain.750 Insulated Type UL Recognized |
OCR Scan |
QM300HA-24B E80276 E80271 | |
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM30DY-24 MEDIUM POWER SWITCHING USE INSULATED TYPE QM30DY-24 Ic Collector current. 30A Vcex Collector-emitter voltage 1200V hFE DC current gain. 75 Insulated Type UL Recognized |
OCR Scan |
QM30DY-24 E80276 E80271 | |
QM300HA-2H
Abstract: QM300H
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OCR Scan |
QM300HA-2HB E80276 E80271 QM300HA-2H QM300H | |
max 1786a
Abstract: 2SB1120 SANYO 1786A
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OCR Scan |
1707b 00071t 2SB1120 250mm3 max 1786a SANYO 1786A | |
2030DV
Abstract: sc045
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OCR Scan |
2030DV ESM2030DV 2030DV sc045 | |
VQE 24 ledContextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4 b TO & VDE UL GlobalOptoisolator CfiA sen ® ® ® 8EMK0 OEMKO NEMKO ® BAST H 11 A A 1* H 11A A 2 [CTR a 20% M in] 6 -P in D IP O p to lso la to rs A C In p u t/T tan slsto r O utput {CTR • 10% M in] H 11 A A 3 |
OCR Scan |
H11AA1, H11AA2, H11AA3, H11AA4 H11AA4* VQE 24 led | |
Contextual Info: m NBŒ X KD324515HB Powerex, Inc., 200 H illis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 H iQ tl- B G t3 Dual Darlington Transistor Module 150 Amperes/600 Volts OUTLINE DRAWING Description: The Powerex High-Beta Dual Darlington Transistor Modules are |
OCR Scan |
KD324515HB Amperes/600 | |
transistor eb 2030
Abstract: transistor 2030 2SC5209 oc pnp sc62
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OCR Scan |
2SA1944 2SA1944 2SC5209. -500mA -10mA) SC-62 transistor eb 2030 transistor 2030 2SC5209 oc pnp sc62 |