TRANSISTOR EQUIVALENTS Search Results

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

Contextual Info: BD239C NPN power transistor Features • NPN transistor Applications ■ General purpose switching and amplifier transistor Description 1 The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance

BD239C

Abstract: BD240C JESD97 transistor marking 1a
Contextual Info: BD239C NPN power transistor Features • NPN transistor Applications ■ General purpose switching and amplifier transistor Description 1 The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance

BD179

Abstract: 0016114E JESD97 ST BD179
Contextual Info: BD179 NPN power transistor Features • NPN transistor Applications ■ General purpose switching Description 3 The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance

transistor bd442

Abstract: 0016114E BD440 BD441 BD442 JESD97 PNP POWER TRANSISTOR SOT-32
Contextual Info: BD442 PNP power transistor Features • PNP transistor Applications ■ Linear and switching industrial equipment Description This devices is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain

BD439

Abstract: st bd441 BD441 BD442 JESD97 BD441 an
Contextual Info: BD441 NPN power transistor Features • NPN transistor Applications ■ Linear and switching industrial equipment Description This device is manufactured in planar technology with “base island” layout. The resulting transistor shows exceptional high gain performance

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

C 5074 transistor

Abstract: 2N5195 2N5192 NPN POWER TRANSISTOR SOT-32 c 5074
Contextual Info: 2N5195 Low voltage PNP power transistor Features • Low saturation voltage ■ PNP transistor Application ■ Audio, power linear and switching equipment Description 3 The device is manufactured in planar technology with “base island” layout. The resulting transistor

SC06960

Abstract: JESD97
Contextual Info: 2STN5551 Surface mounting NPN transistor Preliminary Data Features • NPN transistor in SOT-223 surface mounting package ■ Low VCE sat behavior 4 Application ■ 1 Linear amplifier 2 3 SOT-223 Description The device is an NPN transistor manufactured by

BUV48A

Abstract: JESD97 ST BUV48A
Contextual Info: BUV48A High voltage fast switching NPN power transistor Features • NPN transistor ■ High voltage capability ■ High current capability ■ Fast switching speed Applications 3 2 ■ Switching mode power supplies ■ Flyback and forward single transistor low power

SC06960

Contextual Info: 2STN5551 Surface mounting NPN transistor Features • ■ NPN transistor in SOT-223 surface mounting package 4 Low VCE sat behavior Application ■ 1 Linear amplifier 2 3 SOT-223 Description The device is an NPN transistor manufactured by epitaxial planar technology.

2N1046

Abstract: germanium power transistor diode germanium tu 38 f Germanium Transistor Texas Germanium 639 TRANSISTOR PNP Germanium power diode germanium tu 38 e
Contextual Info: TYPE 2N1046 P-N-P ALLOY-DIFFUSED GERMANIUM POWER TRANSISTOR HIGH-FREQUENCY POWER TRANSISTOR FOR MILITARY AND INDUSTRIAL APPLICATIONS 5H %I P* mechanical data This transistor is in a p recision-w elded, herm etically sealed enclosure. The mounting b ase provides an

Contextual Info: BD179 NPN power transistor Features • NPN transistor Applications ■ s ct General purpose switching u d o Description r P e The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance

BD238

Abstract: bd237 equivalent bd238 equivalent 0016114E BD237 Transistor B C 458
Contextual Info: BD238 Low voltage PNP power transistor Features • Low saturation voltage ■ PNP transistor Applications ■ Audio, power linear and switching applications 3 1 SOT-32 TO-126 Description The device is manufactured in planar technology with “Base Island” layout. The resulting transistor

ZXTC6718MCTA

Abstract: DFN3020B-8 ZXTC6718MC marking db2 peak hold ic
Contextual Info: A Product Line of Diodes Incorporated ZXTC6718MC COMPLEMENTARY DUAL 20V LOW SATURATION TRANSISTOR Features Mechanical Data • • • • • • • • • • • NPN Transistor ƒ VCEO =20 ƒ RSAT = 47 mΩ ƒ IC = 4.5A PNP Transistor ƒ VCEO = -20V ƒ

ZXTC6717MC

Abstract: marking DA1 DFN3020B-8 ZXTC6717MCTA
Contextual Info: A Product Line of Diodes Incorporated ZXTC6717MC DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data • • • • • • • • • • • • • • NPN Transistor • VCEO = 15V • RSAT = 45mΩ • IC = 4.5A PNP Transistor

MARKING 91A NPN transistor

Abstract: MARKING 91A DFN3020B-8 ZXTC4591AMC ZXTC4591AMCTA
Contextual Info: A Product Line of Diodes Incorporated ZXTC4591AMC COMPLEMENTARY DUAL 40V HIGH PERFORMANCE TRANSISTOR Features Mechanical Data • • • • • • • • • • • • NPN Transistor ƒ VCEO = 40 ƒ RSAT = 195 mΩ ƒ IC = 2.5A PNP Transistor ƒ VCEO = -40V

DFN3020B-8

Abstract: ZXTC6719MC ZXTC6720MC ZXTC6720MCTA
Contextual Info: A Product Line of Diodes Incorporated ZXTC6720MC DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data • • • • • • • • • • • • • • NPN Transistor • VCEO = 80V • RSAT = 68 mΩ • IC = 3.5A PNP Transistor

DFN3020B-8

Abstract: ZXTC6719MC ZXTC6719MCTA
Contextual Info: A Product Line of Diodes Incorporated ZXTC6719MC DUAL 50V NPN & 40V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data • • • • • • • • • • • • • • NPN Transistor • VCEO = 50V • RSAT = 68 mΩ • IC = 4A PNP Transistor

2STP535

Abstract: ST DARLINGTON TRANSISTOR 2STP535FP alternator ic connection Alternator Voltage Regulator Darlington alternator voltage regulator schematic
Contextual Info: 2STP535FP NPN power Darlington transistor Features • Monolithic Darlington transistor with integrated antiparallel collector-emitter diode ■ Very high DC current gain Applications ■ Electronic ignition ■ AC-DC motor control ■ Alternator regulator

NTC 220-11

Abstract: PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide
Contextual Info: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 1 Transmitting transistor design transistors are suitable, see panel, and Philips Semiconductors’ portfolio includes both types. Their relative merits are summarized later in this section. First,

FMMT634Q

Contextual Info: A Product Line of Diodes Incorporated FMMT634Q 100V NPN DARLINGTON TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. •  Features 

Contextual Info: A Product Line of Diodes Incorporated Green FZT651Q 60V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the • stringent requirements of Automotive Applications. •

Contextual Info: A Product Line of Diodes Incorporated FMMT491Q 60V NPN MEDIUM POWER TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the • stringent requirements of Automotive Applications. • Case: SOT23