TRANSISTOR ESM Search Results

TRANSISTOR ESM Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR ESM Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MN1280 Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor	Original	PDF
oz960 Abstract: khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors	Original	PDF	KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
2SC5471 Abstract: 2SC5853 2sa1015 transistor 2sc1815 transistor 2SA970 transistor 2SC5854 transistor 2sc1815 2Sc5720 transistor 2SC5766 Low-Frequency Low-Noise PNP transistor Text: Part Number Product Category Polarity Collector-Emitter Voltage V_CEO,max V 2SC1815 Transistor for Low-Frequency Small-Signal Amplification NPN 50.0 150.0 0.25 2SA1015 Transistor for Low-Frequency Small-Signal Amplification PNP -50.0 -150.0 -0.3 2SC2458 Transistor for Low-Frequency Small-Signal Amplification NPN	Original	PDF	2SC1815 2SA1015 2SC2458 2SA1048 2SC2240 2SA970 2SC2459 2SA1049 A1587 2SC4117 2SC5471 2SC5853 2sa1015 transistor 2sc1815 transistor 2SA970 transistor 2SC5854 transistor 2sc1815 2Sc5720 transistor 2SC5766 Low-Frequency Low-Noise PNP transistor
RN1107F Abstract: RN1108F RN1109F RN2107F Text: RN1107F~RN1109F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1107F,RN1108F,RN1109F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors.	Original	PDF	RN1107F RN1109F RN1108F RN2107F 2109F RN1107F RN1108F RN1109F
97CC Abstract: transistor ESM 16 transistor ESM 30 ESM18 transistor ESM 18 Text: ESM 18 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE High current fast switching transistor Transistor de commutation rapide fort courant V CEO 100 V Amplification BF ou H F grands signaux •c 25 A Thermal fatigue inspection	OCR Scan	PDF	CB-19 97CC transistor ESM 16 transistor ESM 30 ESM18 transistor ESM 18
transistor ESM 30 Abstract: transistor ESM transistor h21e 752 transistor IC 282 ft950 Text: ESM 282 NPN SILICON TRANSISTOR, PLANAR TRIPLE DIFFUSED TRANSISTOR NPN S ILIC IU M , PLAN A R TRIPLE DIFFUSE PR ELIM INARY DATA NOTICE P R E LIM IN A IR E The ESM 282 is an high frequency X-55 plastic package transistor, intended for mixer and os cillator stage in T V VH F tuners.	OCR Scan	PDF	CB-76 100MA -C12e transistor ESM 30 transistor ESM transistor h21e 752 transistor IC 282 ft950
ESM379 Abstract: esm diodes Text: *E S M 379 PNP SILICON TRANSISTOR, PLANAR TRANSISTOR PNP S ILIC IU M , PLAN A R He Preferred device D is p o s itif recommandé The ESM 379 is a low noise high current transistor w ith very good signal handling capability. It is intended for use as input am plifier in large signal	OCR Scan	PDF	CB-146 ESM379 esm diodes
transistor ESM 30 Abstract: ESM269 Text: ESM 269 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN S IL IC IU M , PLA N A R E P IT A X IA L PRELIM IN A R Y DATA N O T I C E P R E L IM I N A I R E ESM 269 is a very tow noise VHF transistor. It features low intermo dulation distorsion V CBO	OCR Scan	PDF
blw95 Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE b'lE J> m bbS3T31 DQ2^SDb QbT IAPX B LW yt H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB operated high power industrial and military transmitting equipment in the h.f. band. The transistor presents excellent performance as a	OCR Scan	PDF	bbS3T31 0DS1S14 blw95
LD 757 ps Abstract: No abstract text available Text: Philips Semiconductors Product Specification PowerMOS transistor BUK545-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack	OCR Scan	PDF	BUK545-100A/B BUK545 -100A -100B BUK545-100A/B 1E-02 LD 757 ps
PR37 RESISTOR Abstract: PR37 resistors Text: N AUER PHILIPS/DISCRETE b^E » bbS3^31 □□2'ISIS D72 BLW96 IAPX H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, A B and B operated high power industrial and military transmitting equipment in the h.f. and v.h.f. band. The transistor presents	OCR Scan	PDF	BLW96 PR37 RESISTOR PR37 resistors
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE b^E D bbS3^31 QQ2T474 72T APX DLVVO / V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f, and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is	OCR Scan	PDF	QQ2T474
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE b^E » bbS3T31 QDS^SS2 T4T BLX13U IAPX H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in transmitting amplifiers operating in the h.f. and v.h.f. bands, with a nominal supply voltage of 28 V. The transistor is specified for s.s.b. applications as linear	OCR Scan	PDF	bbS3T31 BLX13U
4312 020 36640 Abstract: ferroxcube wideband hf choke Text: N AMER PHILIPS/DISCRETE bbS3T31 0 0 2 W 0 SS3 I IAPX BLX39 b^E 3> H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is	OCR Scan	PDF	bbS3T31 BLX39 juF/10 /zF/35 4312 020 36640 ferroxcube wideband hf choke

transistor ESM 16 Abstract: deflexion transistor ESM 30 ESM191 1S1500 Text: E S M 191.500 NPN S ILIC O N TR A N S IS TO R , D IF F U S E D MESA TRANSISTOR NPN S ILIC IU M , MESA DIFFUSE The ESM 191-500 is a fast switching high voltage transistor. It is primarly intended for use in horizon tal deflexion output stage o f black and	OCR Scan	PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	PDF	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	PDF	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
2N 326 Transistor Abstract: transistor ESM 3004 DARLINGTON ESM 30 npn 1000V 100a ESM4016 ESM 3004 transistor BU 184 transistor ESM 3001 transistor ESM 2060T darlington NPN 600V 8a transistor Text: SUPERSWITCH high power transistor MU 86 selector guide guide de sélection transistors grande puissance MU 86 SUPERSWITCH power transistor and darlington for TV applications selector guide guide de sélection transistors de puissance et darlingtons pour applications TV	OCR Scan	PDF	130CIV 109DP O-220 104DP CB-70 2N 326 Transistor transistor ESM 3004 DARLINGTON ESM 30 npn 1000V 100a ESM4016 ESM 3004 transistor BU 184 transistor ESM 3001 transistor ESM 2060T darlington NPN 600V 8a transistor
A 673 transistor Abstract: LB 122 NPN TRANSISTOR SOT533 100pd PHE13002AU TRANSISTOR AH SOT-533 transistor aa a TRANSISTOR 106 d1 SILICON DIFFUSED POWER TRANSISTOR Text: Product specification Philips Semiconductors Silicon Diffused Power Transistor PHE13002AU GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.	OCR Scan	PDF	PHE13002AU OT533 OT533 A 673 transistor LB 122 NPN TRANSISTOR SOT533 100pd PHE13002AU TRANSISTOR AH SOT-533 transistor aa a TRANSISTOR 106 d1 SILICON DIFFUSED POWER TRANSISTOR
sx3704 Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353 Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide	OCR Scan	PDF
transistor BU 184 Abstract: TRANSISTOR BDX pnp transistor 800v darlington NPN 600V 8a transistor transistor BDX 80 NPN Transistor 600V TO-220 pnp transistor 1000v transistor BU 109 transistor ESM NPN Transistor VCEO 1000V Text: SUPERSWITCH high power transistor MU 86 selector guide guide de sélection transistors grande puissance MU 86 SUPERSWITCH power transistor and darlington for TV applications selector guide guide de sélection transistors de puissance et darlingtons pour applications TV	OCR Scan	PDF	130CIV 109DP O-220 104DP O-22CIAB CB-117 BUV37 CB-244 CB-285 transistor BU 184 TRANSISTOR BDX pnp transistor 800v darlington NPN 600V 8a transistor transistor BDX 80 NPN Transistor 600V TO-220 pnp transistor 1000v transistor BU 109 transistor ESM NPN Transistor VCEO 1000V
11AP Abstract: No abstract text available Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11APX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional	OCR Scan	PDF	BUT11APX 11AP
Untitled Abstract: No abstract text available Text: Product specification Philips Semiconductors Silicon Diffused Power Transistor BU2525AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.	OCR Scan	PDF	BU2525AW /PD25c
ESM 498 Abstract: TRANSISTOR BU4522AF BU4522AF Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4522AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour TV receivers and PC monitors.	OCR Scan	PDF	BU4522AF 100-Pq/PD25C_ ESM 498 TRANSISTOR BU4522AF BU4522AF

Privacy Settings

TRANSISTOR ESM Search Results

TRANSISTOR ESM Result Highlights (5)

TRANSISTOR ESM Datasheets Context Search

MN1280

oz960

2SC5471

RN1107F

97CC

transistor ESM 30

ESM379

transistor ESM 30

blw95

LD 757 ps

PR37 RESISTOR

Untitled

Untitled

4312 020 36640

transistor ESM 16

2N2222A 338

y51 h 120c

2N 326 Transistor

A 673 transistor

sx3704

transistor BU 184

11AP

Untitled

ESM 498