TRANSISTOR F 310 Search Results

TRANSISTOR F 310 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR F 310 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor SD335 Abstract: SF126 SF127 SF128 SD337 sd336 SF137 BF241 TRANSISTOR SD349 SD339 Contextual Info: RFT Beschreibung Si-npn-Planar-Epitaxie, TO39 Si-npn-Planar-EpitaxieSC116 NF-Transistor Si-npn-Planar-EpitaxieSC117 NF-Transistor Si-npn-Planar-EpitaxieSC118 NF-Transistor Si-npn-Planar-EpitaxieSC119 NF-Transistor Si-npn-Planar-EpitaxieSC236 NF-Transistor für Vorund Treiberstufen	Original	Si-npn-Planar-EpitaxieSC116 Si-npn-Planar-EpitaxieSC117 Si-npn-Planar-EpitaxieSC118 Si-npn-Planar-EpitaxieSC119 Si-npn-Planar-EpitaxieSC236 Si-npn-Planar-EpitaxieSC237 Si-npn-Planar-EpitaxieSC238 VorSC239 Si-pnp-Planar-EpitaxieSC307 Si-pnp-Planar-EpitaxieSC308 transistor SD335 SF126 SF127 SF128 SD337 sd336 SF137 BF241 TRANSISTOR SD349 SD339	PDF
74h32 Abstract: MC3021 MC3051 MC3023 MC3151 C3109 MC3029 MC3060 MC3025 MC3001 Contextual Info: em o, öö INTEGRATED CIRCUITS FROM MOTOROLA D f f liT f H DDD MC3000 Series 0 to +75°C /M C 74H 00 MC3100 Series ( - 5 5 to +125°C )/M C 54H 00 IS S U E A M T T L III integrated circuits comprise a family of transistor transistor logic designed for general purpose digital applications.	OCR Scan	MC3000 /MC74H00 MC3100 /MC54H00 MC3052/MC3152 74h32 MC3021 MC3051 MC3023 MC3151 C3109 MC3029 MC3060 MC3025 MC3001	PDF
P364 Abstract: tyco igbt V23990-P364-F Contextual Info: V23990-P364-F flow PACK 0, 600V version 0403 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung	Original	V23990-P364-F Tj150 D81359 P364 tyco igbt V23990-P364-F	PDF
sc 6038 Abstract: tyco igbt p363 Contextual Info: V23990-P363-F flow PACK 0, 600V version 0403 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung	Original	V23990-P363-F D81359 sc 6038 tyco igbt p363	PDF
tyco igbt Abstract: V23990-P365-F 600v 30 kHz IGBT Contextual Info: V23990-P365-F flow PACK 0, 600V version 0403 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung	Original	V23990-P365-F D81359 tyco igbt V23990-P365-F 600v 30 kHz IGBT	PDF
KS52 Abstract: KS524505 S-10 S-11 S-12 Contextual Info: t f w r ¡0 .: 2 .3 - 1 / f ? o KS524505 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S it lQ lO D S T H n C jtO n Transistor Module 50 Amperes/600 Volts O UTLIN E DRAWING Description: The Powerex Single Darlington Transistor Modules are high power	OCR Scan	KS524505 Amperes/600 KS52 KS524505 S-10 S-11 S-12	PDF
j48 transistor Abstract: TRANSISTOR j4 ASI10545 AJT015 Contextual Info: AJT015 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI AJT015 is a silicon bipolar power transistor designed for avionics applications including JTIDS in 960-1215 MHz band. ØE D F G H I FEATURES: M MINIMUM inches / mm	Original	AJT015 AJT015 j48 transistor TRANSISTOR j4 ASI10545	PDF
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3101 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION 2SC 3101 is a silicon N PN epitaxial planar typ e transistor specifi OUTLINE DRAWING Dimensions in mm cally designed fo r U H F power amplifiers applications. FEATURES • High pow er gain:	OCR Scan	2SC3101	PDF
Contextual Info: AJT015 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI AJT015 is a silicon bipolar power transistor designed for avionics applications including JTIDS in 960-1215 MHz band. ØE D F G H I FEATURES: M MINIMUM inches / mm	Original	AJT015 AJT015	PDF
Contextual Info: preliminary data version 03/03 V23990-P434-F-PM flow PACK 1, 600V Maximum Ratings / Höchstzulässige Werte Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung DC collector current Condition	Original	V23990-P434-F-PM D81359	PDF
tyco igbt Abstract: THERMISTOR NTC 1100 ohm Contextual Info: V23990-P500-F preliminary data version 0303 fast PACK 0 H, 600V Maximum Ratings / Höchstzulässige Werte Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung DC collector current Kollektor-Dauergleichstrom	Original	V23990-P500-F D81359 RT/R25 tyco igbt THERMISTOR NTC 1100 ohm	PDF
tyco igbt Abstract: V23990-P502-F NTC 150 ohm tyco igbt 214 Contextual Info: V23990-P502-F preliminary data version 0303 fast PACK 0 H, 600V Maximum Ratings / Höchstzulässige Werte Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung DC collector current Kollektor-Dauergleichstrom	Original	V23990-P502-F 100Rgon D81359 RT/R25 tyco igbt V23990-P502-F NTC 150 ohm tyco igbt 214	PDF
tyco igbt Abstract: V23990-P503-F THERMISTOR NTC 1100 ohm break resistor in igbt igbt tyco 270 IGBT tyco Contextual Info: V23990-P503-F preliminary data version 0303 fast PACK 0 H, 600V Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung	Original	V23990-P503-F D81359 RT/R25 tyco igbt V23990-P503-F THERMISTOR NTC 1100 ohm break resistor in igbt igbt tyco 270 IGBT tyco	PDF
2DI75M-120 Abstract: 1di200 Contextual Info: ^ g jjjf /\°7 — x / W 7s / Power Devices • / v'9 —h 7 > y X ^ i y . i “ ^ Power Transistor Modules 1 2 0 0 V ? 7 * S h F E / '* 7 - h 7 > '> '^ 5 f ;E ' > ' a - ^ 1200 volts class high hFE power transistor modules m £ V cbo Device type 2DI50M-120	OCR Scan	2DI50M-120 2DI75M-120 2DI100M-120 2DI150M-120 1DI200M-120 1DI300M-120 T25C3 M2047 6DI15M-120 6DI30M-120 1di200	PDF

S0692 Contextual Info: f l 7 SGS-THOM SON ^7# R ILECTI3 m gi S0692 SMALL SIGNAL PNP TRANSISTOR Type Marking S0692 P39 • SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . HIGH VOLTAGE TRANSISTOR FOR VIDEO AMPLIFIER	OCR Scan	S0692 S0642 OT-23 SC06810 OT-23 S0692	PDF
Contextual Info: Part Number: Integra IB3135MH65 TECHNOLOGIES, INC. Silicon Bipolar  Ultra-high f T S-Band Radar Transistor Class C Operation  High Efficiency The high power pulsed radar transistor device part number IB3135MH65 is designed for S-Band radar systems operating over the	Original	IB3135MH65 IB3135MH65 IB3135MH65-REV-NC-DS-REV-NC	PDF
Contextual Info: Part Number: Integra IB3135MH75 TECHNOLOGIES, INC. Silicon Bipolar  Ultra-high f T S-Band Radar Transistor Class C Operation  High Efficiency The high power pulsed radar transistor device part number IB3135MH75 is designed for S-Band radar systems operating over the	Original	IB3135MH75 IB3135MH75 IB3135MH75-REV-NC-DS-REV-A	PDF
MPSU07 Abstract: ic 31050 MC 139 transistor MPSU57 2S53 Contextual Info: MOTOROLA SC 1SE D I L3b72S4 □ OfiSM'ìS 1 \| XSTRS/R F T -3 Ì-0 7 MOTOROLA SEMICONDUCTOR MPS-U07 TECHNICAL DATA NPN SILICON AMPLIFIER TRANSISTOR NPN SILICON ANNULAR AMPLIFIER TRANSISTOR . . . designed for general-purpose, high-voltage amplifier and driver	OCR Scan	L3b72S4 MPS-U07 MPS-U57 MPSU07 ic 31050 MC 139 transistor MPSU57 2S53	PDF
Contextual Info: MOT OROL A SC XSTRS/R F> 4bE b3b7S5M D QQIBTB? b «M O T bT Order this data sheet By MUN2211/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MUN2211 MUN2212 MUN2213 Bias Resistor Transistor NPN Silicon Surface Mount Transistor With Monolithic Bias Resistor Network	OCR Scan	MUN2211/D MUN2211 MUN2212 MUN2213	PDF
MPSU57 Abstract: MPS-U07 MPS-U57 MPSU57 motorola transistor a 953 037s transistor dm 506 724 motorola NPN Transistor Contextual Info: MOTOROL A SC XSTRS/R F 1EE D \| fc.3t?aSM OGflSSOT a \| T - Î 3- I 7 MOTOROLA SEMICONDUCTOR MPS-U57 TECHNICAL DATA AMPLIFIER TRANSISTOR PNP SILICON ANNULAR AMPLIFIER TRANSISTOR * PNP SILICON . . . designed for general-purpose, high-voltage amplifier and driver	OCR Scan	MPS-U57 MPS-U07 MPSU57 MPS-U07 MPS-U57 MPSU57 motorola transistor a 953 037s transistor dm 506 724 motorola NPN Transistor	PDF
P77 transistor Abstract: 1.5 j63 .15 j63 BZ15 ECG5016A l 9113 J4 81 diode Contextual Info: ,z= i-s L-J =7 f .- an AMP company * z z - = = Radar Pulsed Power Transistor, 0.85W, 2ms Pulse, 20% Duty PHI 214-0.851 1.2 - 1.4 GHz Features NPN Silicon Microwave Power Transistor Common Emitter Configuration Broadband Class A Operation Matrix Geometry	Original	ECG5016A PH1214- P77 transistor 1.5 j63 .15 j63 BZ15 ECG5016A l 9113 J4 81 diode	PDF
MJE305 Abstract: MJE3055T MJE30*T MJE2955T-MJE3055T Contextual Info: CDU MJE2955T MJE3055T MJE2955T, MJE3055T PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR Genera], Purpose Amplifier and Switching Applications DIM A 8 C E F G H J °Jc. MAX 16.51 10.67 4.B3 0.90 1,40 3,88 2.79 3.43 0,56 3,56 1,15 3,75 2,29 2,54 -	OCR Scan	MJE2955T MJE3055T MJE2955T, MJE305 MJE3055T MJE30*T MJE2955T-MJE3055T	PDF
MPSU95 Abstract: MPSU45 Motorola MPSU95 MPS-U95 a38 TRANSISTOR transistor mpsu45 Motorola MPSU45 motorola darlington power transistor audio motorola transistor r 724 transistor f 506 Contextual Info: MOTOROLA SC XSTRS/R 1SE D I F b3b?2S4 0005513 T \| MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP SILICON DARLINGTON TRANSISTOR PNP SILICON DARLINGTON AM PLIFIER TRANSISTOR . . designed for amplifier and driver applications. High DC Current Gain — hp£ = 25,000 Min @ lc = 200 mAdc	OCR Scan	MPS-U45 MPSU95 MPSU45 Motorola MPSU95 MPS-U95 a38 TRANSISTOR transistor mpsu45 Motorola MPSU45 motorola darlington power transistor audio motorola transistor r 724 transistor f 506	PDF
2SC4218 Abstract: 5070mo NO-310 Contextual Info: SAMYO i I 2SC4218 No.3104A NPN Triple Diffused Planar Silicon Transistor Color TV Chroma Output, High-Voltage Driver Applications F e a tu re s •High breakdown voltage ■Small reverse transfer capacitance and Vi f ■ *, •’Ä . "'ìli,:,. 4% A bsolute M axim um R atings at Ta = 25°C	OCR Scan		PDF

TRANSISTOR F 310 Search Results

TRANSISTOR F 310 Result Highlights (5)

TRANSISTOR F 310 Datasheets Context Search

transistor SD335

74h32

P364

sc 6038

tyco igbt

KS52

j48 transistor

tyco igbt

tyco igbt

tyco igbt

2DI75M-120

S0692

MPSU07

MPSU57

P77 transistor

MJE305

MPSU95

2SC4218