TRANSISTOR F 463 Search Results

TRANSISTOR F 463 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

TRANSISTOR F 463 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: MOTOROLA SC XSTRS/R F 4bE D • b3b72SH MOTOROLA 3 T - 3 3 - 1 3 ■I SEM ICONDUCTOR TECHNICAL DATA 2N6166 T h e R F L in e 100 W A T T S - 150 MHz R F POWER TRANSISTOR NPN SILICON R F POWER TRANSISTOR NPN S IL IC O N designed f o r V H F p o w e r a m p lifie r a p p lic a tio n s in m ilita ry and in	OCR Scan	b3b72SH 2N6166	PDF
P364 Abstract: tyco igbt V23990-P364-F Contextual Info: V23990-P364-F flow PACK 0, 600V version 0403 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung	Original	V23990-P364-F Tj150 D81359 P364 tyco igbt V23990-P364-F	PDF
transistor 7905 Contextual Info: MOTOROLA SC XSTRS/R 4bE F D • b3b?2S4 00=14326 2 « flO T b -r-3 2 > " 0 = > MOTOROLA ■ SEM ICONDUCTOR TECHNICAL DATA T h e R F L in e 4 W — 175 MHz NPN SILICON RF POWER TRANSISTOR RF POWER TRANSISTOR . . . designed for 12.5 V olt large-signal power amplifier applications	OCR Scan		PDF
C459 Abstract: 2N1613 1613 14 AMB-45 Contextual Info: Nicht für Neuentwicklungen Not for new developm ents 2 N 1613 'W Silizium-NPN-Planar-Transistor Silicon NPN Planar Transistor Anwendungen: HF-Verstärker und schnelle Schalter Applications: RF am plifiers and high speed switches Besondere Merkmale: • Hohe Sperrspannung	OCR Scan		PDF
RNW transistor Abstract: transistor marking MK R02G Contextual Info: SILICON NPN EPITAXIAL PLANAR T Y P E TRANSISTOR 2 3 Q 4 3 5 U nit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. • \ Low Noise Figure, High Gain. N F = l.ld B , \|S2leP = 14dB f=lG H z MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage	OCR Scan	Gai10V, 2SC4315 H07/0= RNW transistor transistor marking MK R02G	PDF
transistor d 2389 Contextual Info: PRELIMINARY DATA SHEET_ \\|F f / HETERO JUNCTION FIELD EFFECT TRANSISTOR / NE24283B C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE24283B is a Herero Junction FET that utilizes the Unit : mm	OCR Scan	NE24283B NE24283B transistor d 2389	PDF
BCY69 Abstract: BCY 69 transistor 468 Contextual Info: BCY 69 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN S ILICIUM , PLANAR EPITAXIAL - LF small signal amplification low noise Amplification BP petits signaux (faible bruit) v CEO 20 V 'c 100 mA *216 (2 600 - 900 F (0,2 mA) 5 dB max Maximum power dissipation	OCR Scan		PDF
NEC k 2134 transistor Abstract: nec k 3115 transistor NEC D 587 KU 612 NEC k 3115 transistor NEC D 587 transistor NEC D 588 NEC m 2134 transistor P12778EJ1VODSOO transistor KU 612 Contextual Info: PRELIMINARY DATA SHEET_ M F f / HETERO JUNCTION FIELD EFFECT TRANSISTOR / NE24283B C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE24283B is a Herero Junction FET that utilizes the Unit : mm	OCR Scan	NE24283B NE24283B NEC k 2134 transistor nec k 3115 transistor NEC D 587 KU 612 NEC k 3115 transistor NEC D 587 transistor NEC D 588 NEC m 2134 transistor P12778EJ1VODSOO transistor KU 612	PDF
TO-92 CASE MPSA06 Abstract: F 9016 transistor 7333 A MPSa06 equivalent transistor MPSA06 transistor 7333 MPSA06 transistor MPSA06 Contextual Info: MPSA06 NPN Silicon Transistor Feature: • General Purpose NPN Silicon Planar Epitaxial Amplifier Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 1.40 H 1.14 1.53 K 12.70	Original	MPSA06 TO-92 CASE MPSA06 F 9016 transistor 7333 A MPSa06 equivalent transistor MPSA06 transistor 7333 MPSA06 transistor MPSA06	PDF
bf199 equivalent Abstract: bF199 transistor BF199 F 9016 transistor transistor 9016 npn 03 transistor data bf199 ic 9400 BF199 RF transistor NPN BF199 Contextual Info: BF199 NPN Silicon Transistor Feature: • NPN Silicon Planar Epitaxial RF Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 H 1.20 K 12.70 - L 1.982 2.082 M 1.03 1.20 1.40	Original	BF199 bf199 equivalent bF199 transistor BF199 F 9016 transistor transistor 9016 npn 03 transistor data bf199 ic 9400 BF199 RF transistor NPN BF199	PDF
SD1019 Abstract: TEA 1019 M130 Contextual Info: H M S 'n m rtìr^ f- * r t I f l / C f S f ¡ I P ro g re s s P o w e re d b y T e c h no log y 140 Commerce Drive M ontgom eryville, PA 18936-1013 Tel: 215 631-9840 SD1019 RF & MICROWAVE TRANSISTORS 108.152MHz APPLICATIONS CLASS C TRANSISTOR FREQUENCY	OCR Scan	152MHz 136MHz SD1019 Juncti8SP1019-09 S085D1019-10 SD1019 15mFSEMCOR C7AB220 150pF 14AWG. TEA 1019 M130	PDF
MPS-U31 Abstract: MPSU31 MOTOROLA an-596 DOW 340 MPS8000 an-596 MPS8001 5659065-3B MPS-U31-1 Contextual Info: MPS-U31 SILICON NPN SILICON ANNULAR 3.5 W - 27 MHz RF TRANSISTOR RF POWER OUTPUT TRANSISTOR . . . designed for use in Citizen-Band and other high-frequency com munications equipm ent operating to 30 M H z. Higher breakdown voltages allow a high percentage o f up-m odulation in A M circuits.	OCR Scan	MPS-U31 MPS8000 MPS8001 AN-S96- Dow-340 0ow-340 MPS-U31 MPSU31 MOTOROLA an-596 DOW 340 an-596 5659065-3B MPS-U31-1	PDF
m64084 Abstract: m64084a M64084AGP KSS tcxo 12.8MHz Cordless telephone system block diagram M64884 DUAL XTAL OSCILLATOR IC TCXO KSS MITSUBISHI LOT NO. CODE mitsubishi Lot No. Year code Contextual Info: MITSUBISHI ICs Cordless Telephone M64884FP Transistor for VCO,1st IF MIX,2-multiple circuit built-in 500MHz/1GHz Dual PLL Synthesizer 1.DESCRIPTION The M64884FP is a 2-sy stem 1-chip PLL f requency s y nthesizer IC designed of Analog cordless telephone f or North	Original	M64884FP 500MHz/1GHz M64884FP 500MHz M64884 m64084 m64084a M64084AGP KSS tcxo 12.8MHz Cordless telephone system block diagram M64884 DUAL XTAL OSCILLATOR IC TCXO KSS MITSUBISHI LOT NO. CODE mitsubishi Lot No. Year code	PDF
sem 2106 Abstract: bux13 Contextual Info: I MOTORGLA SC X S T R S /R 12E D F I k 3 b7 2 S4 0 0 0 4 =521 3 \| MOTOROLA SEM ICO N DUCTO R BUX13 TECHNICAL DATA 15 AMPERES SWITCHMODE SERIES NPN SILICON POWER TRANSISTOR NPN SILICON POWER METAL TRANSISTOR . . . designed for high speed, high voltage, high power applications.	OCR Scan	BUX13 AN415A) sem 2106 bux13	PDF

MGF4916F Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4910F Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The M G F 4 9 1 0 F series super-low -noise HEMT High Electron M ob ility Transistor is designed fo r use in X to K band am plifiers. The herm etically sealed m etal-ceram ic	OCR Scan	MGF4910F F4310F 4910F MGF4916F	PDF
NA 6884 Abstract: IC AT 6884 0200E TRANSISTOR 8808 W Contextual Info: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR NE662M04 FEATURES HIGH GAIN BANDWIDTH: f r = 23 GHz LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz NEW LOW PROFILE M04 PACKAGE: • SOT-343 footprint, with a height of just 0.59 mm	OCR Scan	OT-343 NE662M04 NE662M04 NA 6884 IC AT 6884 0200E TRANSISTOR 8808 W	PDF
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF949T1 NPN Silicon Low Noise Transistors Motorola's M R F 9 4 9 is a high perform ance N P N transistor designed for use in high gain, low noise sm all-signal amplifiers. T h e M R F 9 4 9 is well suited for low	OCR Scan	MRF949T1 598E-16 548E-14 395E-16 00E-05 70E-13 60E-13 00E-11 00E-O9 MRF949	PDF
MJE 13031 Abstract: 054S1 cd 4637 Contextual Info: PRELIMINARY DATA SHEET UPA836TF NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES_ • OUTLINE DIMENSIONS Units in mm LOW NOISE: Package O utline TS06 (Top View) Q1 :NF = 1.5 dB TYP at f = 2 GHz, V ce = 3 V, Ic = 3 mA Q2:NF = 1.7 dB TYP at f = 2 GHz, V ce = 1 V, Ic = 3 mA	OCR Scan	UPA836TF NE685, NE688) UPA836TF UPA836TF-T1 UPA833TF MJE 13031 054S1 cd 4637	PDF
MRF140 equivalent Abstract: arco capacitors 262 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistor N-Channel Enhancement-Mode Designed primarily for linear large-signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics	OCR Scan	MRF140 MRF140 equivalent arco capacitors 262	PDF
MOTOROLA circuit for mrf150 Abstract: UNELCO MICA CAPACITORS motorola MRF150 mrf150 equivalent Unelco J101 BH Rf transistor Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistor MRF150 N-Channel Enhancement-Mode Designed primarily for linear large-signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics	OCR Scan	MRF150 MRF150 MOTOROLA circuit for mrf150 UNELCO MICA CAPACITORS motorola MRF150 mrf150 equivalent Unelco J101 BH Rf transistor	PDF
KCD03 Abstract: bx1462 1C16A HPA251R 31495MO Contextual Info: Ordering n u m b e r:EN 5033 HPA251R No.5033 N PN Triple Diffused P lanar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications F e a tu re s •High speed tf typ = 100ns . ■High breakdown voltage (Vcbo —1500V).	OCR Scan	HPA251R 100ns) QQ2G44b KCD03 bx1462 1C16A HPA251R 31495MO	PDF
Contextual Info: PNP SILICON HIGH FREQUENCY TRANSISTOR NE97833 FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: f r = 5.5 G H z TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: N E 02133 • HIGH INSERTION POWER GAIN: \|S21e \|2 = 10 dB at 1 GHz	OCR Scan	NE97833 NE97833 2SA1978 NE97833-T1	PDF
MJE340 Abstract: MJE340 datasheet MJE340 b c e Contextual Info: MJE340 Medium Power NPN Transistors Features: • NPN Plastic Medium Power Silicon Transistor. • Useful for High Voltage General Purpose Applications. TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E F 2.25 Typical	Original	MJE340 O-126 MJE340 MJE340 datasheet MJE340 b c e	PDF
s parameters 4ghz Abstract: transistor GaAs FET low noise 4Ghz CCT-C3 MU1520 NE46300 NE46385 4ghz s parameters transistor NE46383 S110 transistor RF MESFET S parameters Contextual Info: NEC 53C 6 4 2 7 4 1 % N E C/ CA LI F O R NI A N E C / S3 CALIFORNIA 00806 D E \| t.4E ?m 4 ODDOflOti fi W~ MICROWAVE TRANSISTOR SERIES NE463 D u a l G a t e G a A s M E S F E T FEATURES DESCRIPTION AND APPLICATIONS • T h e N E 4 6 3 is a dual-gate G a A s F E T designed fo r lo w n oise	OCR Scan	NE463 45GHz 12GHz NE463 s parameters 4ghz transistor GaAs FET low noise 4Ghz CCT-C3 MU1520 NE46300 NE46385 4ghz s parameters transistor NE46383 S110 transistor RF MESFET S parameters	PDF

TRANSISTOR F 463 Search Results

TRANSISTOR F 463 Result Highlights (5)

TRANSISTOR F 463 Datasheets Context Search

P364

transistor 7905

C459

RNW transistor

transistor d 2389

BCY69

NEC k 2134 transistor

TO-92 CASE MPSA06

bf199 equivalent

SD1019

MPS-U31

m64084

sem 2106

MGF4916F

NA 6884

MJE 13031

MRF140 equivalent

MOTOROLA circuit for mrf150

KCD03

MJE340

s parameters 4ghz