TRANSISTOR F13 10 Search Results

T100

Abstract: U6084B U6084B-FP VT100
Contextual Info: Features • • • • • • • Pulse-width Modulation up to 2 kHz Clock Frequency Protection against Short-circuit, Load-dump Overvoltage and Reverse VS Duty-cycle 0 to 100% Continuously Output Stage for Power MOSFET Interference and Damage Protection According to VDE 0839 and ISO/TR 7637/1

2027mA

Abstract: 4677B
Contextual Info: Features • • • • • • • Pulse-width Modulation up to 2 kHz Clock Frequency Protection against Short-circuit, Load-dump Overvoltage and Reverse VS Duty-cycle 0 to 100% Continuously Output Stage for Power MOSFET Interference and Damage Protection According to VDE 0839 and ISO/TR 7637/1

atmel 028

Abstract: T100 U6084B U6084B-MFPG3Y VT100 820k switched potentiometer
Contextual Info: Features • • • • • Pulse-width Modulation up to 2-kHz Clock Frequency Protection Against Short-circuit, Load-dump Overvoltage and Reverse VS Duty Cycle 0% to 100% Continuously Output Stage for Power MOSFET Interference and Damage Protection According to VDE 0839 and

free transistor equivalent book

Abstract: free all transistor equivalent book transistor r3n
Contextual Info: Transistors Digital transistors built-in resistors DTB143EK/DTB143EC/DTB143ES •F eatures 1) Built-in bias resistors enable the configuration of an inverter circuit w ithout connecting external input resistors (see the equivalent c ir­ cuit) . 2) The bias resistors consist of thinfilm resistors with complete isola­

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC2223 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation mW (Tamb=25℃) 2. 80¡ À0. 05 1. 60¡ À0. 05 0. 35 1. 9 Collector current

transistor SMD f12

Abstract: f12 SMD TRANSISTOR transistor sot23 f12 smd transistor marking F12 F13 SOT23 f13 sot-23 2SC2223 F12 MARKING
Contextual Info: Transistors IC SMD Type NPN Silicon Epitaxial Transistor 2SC2223 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High gain bandwidth product fT=600MHz TYP 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Cob=1.0PF TYP +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Low output capacitance.

transistor N14

Abstract: 22p03 P28 Transistor p18 transistor
Contextual Info: CFB2020A CFB2020A CFB2020A 16x16 2's Complement Multiplier DESCRIPTION: CFB2020A is a 16-by-16 2's complement multiplier which generates a 32-bit product. By using a modified Booth algorithm, this megafunction gives a reasonable speed and gate count. LOGIC SYMBOL:

dynamic ram binary cell

Abstract: A7 W SMD TRANSISTOR A7 SMD TRANSISTOR SMD F14 transistor SMD f12 smd transistor A6 5962F9582301QXC 5962F9582301QYC SMD Transistor A12 5962F9582301VYC
Contextual Info: HS-65647RH TM Data Sheet Radiation Hardened 8K x 8 SOS CMOS Static RAM The Intersil HS-65647RH is a fully asynchronous 8K x 8 radiation hardened static RAM. This RAM is fabricated using the Intersil 1.2 micron silicon-on-sapphire CMOS technology. This technology gives exceptional hardness to all types of

HS1-65647RH

Abstract: HS1-65647RH-8 HS1-65647RH-Q HS-65647RH HS9-65647RH HS9-65647RH-8 HS9-65647RH-Q HS9A-65647RH-Q
Contextual Info: HS-65647RH Radiation Hardened 8K x 8 SOS CMOS Static RAM August 1995 Features Functional Diagram • 1.2 Micron Radiation Hardened SOS CMOS - Total Dose 3 x 105 RAD Si - Transient Upset >1 x 1011 RAD (Si)/s - Single Event Upset < 1 x 10-12 Errors/Bit-Day

8 BIT ALU by 74181

Abstract: ABB b9 alu 74181 74181 f422
Contextual Info: CFT1811A CFT1811A CFT1811A 16-bit ALU 74181-type DESCRIPTION: CFT1811A is logically identical to the TI 74181, except that it operates on two 16-bit words instead of two 4-bit words. This arithmetic logic unit (ALU) performs 16 logical and 16 binary arithmetic

Contextual Info: X H M - 6 5 2 6 2 /8 8 3 16K X 1 Asynchronous CMOS Static RAM January 1992 Features Pinouts • This Circuit is Processed in Accordance to Mil-Std-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Fast Access

alu 74181

Abstract: 25B22 f422 S2 f19
Contextual Info: CFT1812A CFT1812A CFT1812A 32-bit ALU 74181-type DESCRIPTION: CFT1812A is a 32-bit ALU which is extended from the CFT1810A with the same functions. LOGIC SYMBOL : INPUTS (LOADING IN TRANSISTOR PAIRS ) : S3(4), S2(4), SI(4), SO(4 ), A31(2.5), A30(2.5),A29{2.5),

A7 SMD TRANSISTOR

Abstract: SMD A8 Transistor smd transistor A8 smd transistor A11 SMD Transistor A12 smd transistor a9 A12 SMD TRANSISTOR smd transistor A7 smd transistor A6 SMD a7 Transistor
Contextual Info: HS-6664RH TM Data Sheet August 2000 File Number Radiation Hardened 8kx8 CMOS PROM Features The Intersil HS-6664RH is a radiation hardened 64k CMOS • Electrically Screened to SMD # 5962-95626 [ /Title PROM, organized in an 8k word by 8-bit format. The chip is

SDA3202

Abstract: 3006X6 SMD TRANSISTOR N12 GPS05119 Q67000-H5113 Q67006-H5113 sda 3202 prescaler smd transistor marking ip SDA 3202 TRANSISTOR SMD MARKING CODE n9
Contextual Info: MGP 3006X6 GHz PLL with I2C Bus and Four Chip Addresses Bipolar IC Features ● ● ● ● ● ● 1-chip system for MPU-control I2C Bus 4 programmable chip addresses Short pull-in time for quick channel switch-over and optimized loop stability 3 high-current band switch outputs (20 mA)

circuit diagram of variable dutycycle osc

Abstract: T100 U6084B T100 battery
Contextual Info: U6084B PWM Power Control with Automatic Duty-Cycle Reduction Description The U6084B is a PWM-IC in bipolar technology designed for the control of an N-channel power MOSFET used as a high-side switch. The IC is ideal for the use in the brightness control dimming of lamps such as, in

circuit diagram of variable dutycycle osc

Abstract: T100 U6084B
Contextual Info: U6084B PWM Power Control with Automatic Duty-Cycle Reduction Description The U6084B is a PWM-IC in bipolar technology designed for the control of an N-channel power MOSFET used as a high-side switch. The IC is ideal for the use in the brightness control dimming of lamps such as, in

T100

Abstract: U6084B
Contextual Info: U6084B PWM Power Control with Automatic Duty Cycle Reduction Description The U6084B is a bipolar technology PWM-IC designed for the control of an N-channel power MOSFET used as a high-side switch. The IC is ideal for use in the brightness control dimming of lamps such as, in dashboard

T100

Abstract: U6084B U6084B-FP
Contextual Info: U6084B-FP TELEFUNKEN Semiconductors PWM Power Control with Automatic Duty Cycle Reduction Description The U6084B is a bipolar technology PWM IC designed for the control of an N-channel power MOSFET used as a high side switch. The IC is ideal for the use in the brightness control dimming of lamps such as, in dashboard

HM1-65642/883

Abstract: HM4-65642/883 80C86 80C88
Contextual Info: HM-65642/883 8K x 8 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Full CMOS Design • Six Transistor Memory Cell

transistor 9751

Abstract: T100 U6084B r470PF
Contextual Info: U6084B PWM Power Control with Automatic Duty Cycle Reduction Description The U6084B is a bipolar technology PWM-IC designed for the control of an N-channel power MOSFET used as a high-side switch. The IC is ideal for use in the brightness control dimming of lamps such as, in dashboard

Contextual Info: 3 HS-65647RH Radiation Hardened December1992 8K x 8 SOS CMOS Static RAM Functional Diagram Features • 1.2 Micron Radiation Hardened SOS CMOS - Total Dose 3 x 10s RAD SI - Transient Upset >1 x 1011 RAD (Siys - Single Event Upset < 1 x 10'12 Errors/Bit-Day

Contextual Info: Transistors Digital transistors built-in resistors DTB143EK/DTB143EC/DTB143ES •F e a tu re s 1) • E x t e r n a l d im e n s io n s (U nits: m m ) B u ilt- in b ia s r e s is to r s e n a b le th e c o n fig u ra tio n o f an in v e rte r c irc u it

Contextual Info: HM-65262/883 S 16K x 1 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65262/883 is a CMOS 16384 x 1-bit Static Ran­

Contextual Info: N AflER PHILIPS/DISCRETE 86D 01812 ObE D b b s a ' m oam osa a • BLX92A D r-3 3 - 4 5 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V, The transistor is resistance stabilized and is guaranteed to withstand severe