TRANSISTOR F13 70 Search Results

HM-65262

Contextual Info: HM-65262/883 TM 16K x 1 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Fast Access Time . . . . . . . . . . . . . . . . . . . 70/85ns Max

Contextual Info: X H M - 6 5 2 6 2 /8 8 3 16K X 1 Asynchronous CMOS Static RAM January 1992 Features Pinouts • This Circuit is Processed in Accordance to Mil-Std-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Fast Access

Contextual Info: TS7900 Series 3-Terminal Fixed Negative Voltage Regulator TO-220 ITO-220 Pin Definition: 1. Ground 2. Input tab 3. Output General Description The TS7900 series of fixed output negative voltage regulators are intended as complements to the popular TS7800

Contextual Info: S h K S S « HM-65262/883 16K x 1 Asynchronous CM O S Static RAM August 1996 Features • Description T h is Circuit is P ro cessed in A cco rd a n ce to MIL-STD883 and is Fully Conform ant Under the P rovision s of Paragraph 1.2.1. • Fast A c c e s s T im e . 70/85nsMax

HM-65262

Contextual Info: HM-65262/883 S E M I C O N D U C T O R 16K x 1 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65262/883 is a CMOS 16384 x 1-bit Static Random Access Memory manufactured using the Harris

HM1-65262

Abstract: HM-65262
Contextual Info: HM-65262/883 16K x 1 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65262/883 is a CMOS 16384 x 1-bit Static Random Access Memory manufactured using the Intersil

dynamic ram binary cell

Abstract: A7 W SMD TRANSISTOR A7 SMD TRANSISTOR SMD F14 transistor SMD f12 smd transistor A6 5962F9582301QXC 5962F9582301QYC SMD Transistor A12 5962F9582301VYC
Contextual Info: HS-65647RH TM Data Sheet Radiation Hardened 8K x 8 SOS CMOS Static RAM The Intersil HS-65647RH is a fully asynchronous 8K x 8 radiation hardened static RAM. This RAM is fabricated using the Intersil 1.2 micron silicon-on-sapphire CMOS technology. This technology gives exceptional hardness to all types of

TTL TRANSISTOR MODEL PARAMETER

Contextual Info: FEATURES • 9 - 1 0 MHz ■ +13 dBm 0.1 dBm Compression In Thru State ■ +30 dBm 3rd Order Intercept Point ■ 16.5 dB Gain ■ Integrated GaAs M M IC Switches, Attenuators, Silicon Transistor Amplifier, and TTL Drivers RF2 38 J fcË f MODEL NO. CHD01940

r2c transistor

Abstract: 20190
Contextual Info: ERICSSON ^ PTB 20190 175 Watts, 470-806 MHz Digital Television Power Transistor Description The 20190 is a class AB, NPN, com mon em itter RF power transistor intended for 28 Vdc operation across the 470 to 806 MHz UHF TV frequency band. Rated at 175 watts output power, it is specifically

sxxxx

Contextual Info: æ H A « « H M - 6 5 2 2 /8 8 3 16K x 1 Asynchronous CMOS Static RAM January 1992 Features • 6 Pinouts This Circuit Is Processed In Accordance to Mtl-Std-883 and Is Fully Conformant Under the Provisions of Paragraph 1.2.1. HM1-65262/883 CERAMIC DIP

TRANSISTOR BC 136

Abstract: transistor BD 140 transistor bd 126 BD 140 transistor 16BD136 transistor bc 138 TRANSISTOR 138 TRANSISTOR BD 136 BD 139 transistor transistor bd 711
Contextual Info: TELEFUNKEN ELECTRONIC m ilFW K lIM electronic 17E D • fl^HDD'ib DQ’O TBR^ IALCÛ BD 136 BD 138 Ibd 140 Ci*tirtTtehnotoûte» T-33-17 Silicon PNP Epitaxial Planar Power Transistors Applications: General in AF-range Features: • Power dissipation 8 W • Matched pairs available

HM1-65642/883

Abstract: 80C86 80C88 HM65642C
Contextual Info: HM-65642/883 S E M I C O N D U C T O R 8K x 8 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Full CMOS Design • Six Transistor Memory Cell

SDA3202

Abstract: 3006X6 SMD TRANSISTOR N12 GPS05119 Q67000-H5113 Q67006-H5113 sda 3202 prescaler smd transistor marking ip SDA 3202 TRANSISTOR SMD MARKING CODE n9
Contextual Info: MGP 3006X6 GHz PLL with I2C Bus and Four Chip Addresses Bipolar IC Features ● ● ● ● ● ● 1-chip system for MPU-control I2C Bus 4 programmable chip addresses Short pull-in time for quick channel switch-over and optimized loop stability 3 high-current band switch outputs (20 mA)

bly89a

Abstract: Transistor bly89a
Contextual Info: N AMER PHILIPS/DISCRETE ObE D 86D 0 1910 • b b S a ^ l Q01414fl 3 D T - i t-u BLY89A JV V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every

HM1-65642/883

Abstract: HM4-65642/883 80C86 80C88
Contextual Info: HM-65642/883 8K x 8 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Full CMOS Design • Six Transistor Memory Cell

dtc114ek

Abstract: B 560 PNP TRANSISTOR Transistor circuits 2SA1037AK
Contextual Info: D I G I TA L T R A N S I S T O R A R R AY S DUAL ISOLATED NPN/PNP TRANSISTOR CIRCUITS • COMPLETE SUB–CIRCUITS IN A SINGLE PACKAGE: SAVE PLACEMENT COSTS, INCREASES RELIABILITY • APPLICATIONS INCLUDE: PRE-AMPS, TV TUNERS, MIXER OSCILLATORS, INTERFACING LOGIC,

T100

Abstract: U6084B U6084B-FP VT100
Contextual Info: Features • • • • • • • Pulse-width Modulation up to 2 kHz Clock Frequency Protection against Short-circuit, Load-dump Overvoltage and Reverse VS Duty-cycle 0 to 100% Continuously Output Stage for Power MOSFET Interference and Damage Protection According to VDE 0839 and ISO/TR 7637/1

M2SK1544

Contextual Info: TOSHIBA 2SK1544 TOSHIBA FIELD EFFECT TRANSISTOR M T SILICON N CHANNEL MOS TYPE tt-MOSIII-5 • m. ■ v ■ ■ INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. • • • • U nit in mm

Contextual Info: Transistors Digital transistors built-in resistors DTB143EK/DTB143EC/DTB143ES •F e a tu re s 1) • E x t e r n a l d im e n s io n s (U nits: m m ) B u ilt- in b ia s r e s is to r s e n a b le th e c o n fig u ra tio n o f an in v e rte r c irc u it

Contextual Info: HM-65262/883 S 16K x 1 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65262/883 is a CMOS 16384 x 1-bit Static Ran­

2027mA

Abstract: 4677B
Contextual Info: Features • • • • • • • Pulse-width Modulation up to 2 kHz Clock Frequency Protection against Short-circuit, Load-dump Overvoltage and Reverse VS Duty-cycle 0 to 100% Continuously Output Stage for Power MOSFET Interference and Damage Protection According to VDE 0839 and ISO/TR 7637/1

atmel 028

Abstract: T100 U6084B U6084B-MFPG3Y VT100 820k switched potentiometer
Contextual Info: Features • • • • • Pulse-width Modulation up to 2-kHz Clock Frequency Protection Against Short-circuit, Load-dump Overvoltage and Reverse VS Duty Cycle 0% to 100% Continuously Output Stage for Power MOSFET Interference and Damage Protection According to VDE 0839 and

Contextual Info: N AflER PHILIPS/DISCRETE 86D 01812 ObE D b b s a ' m oam osa a • BLX92A D r-3 3 - 4 5 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V, The transistor is resistance stabilized and is guaranteed to withstand severe

HM1-65642/883

Abstract: HM4-65642/883 80C86 80C88 HM65642C intersil eprom
Contextual Info: HM-65642/883 8K x 8 Asynchronous CMOS Static RAM May 2002 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Full CMOS Design • Six Transistor Memory Cell