2SK458
Abstract: 2SK45
Text: tr m & m m M O S « # * * * ''* ? - h 9 M O S Field Effect Pow er Transistor 2SK458 N f t ^ ' 0r7 - M O S FET X 'f dUfls X i f f l N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK458ii, FET PACKAGE DIMENSIONS Unit : mm T*, iS S & D C
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2SK458
2SK458Ã
2SK458
2SK45
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transistor et 454
Abstract: 2sk542 DC-DC H14 F530 T108 T460
Text: mm & ma SEC M O S M nft& }£:s<r7 M O S Field Effect P o w er Transistor m = f= r l\T X 2SK542 N f t ^ /^ '° 7 - M O S FET x > r i i f f l N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK 542Ü , FET ^ J fiia /P A C K A G E DIMENSIONS
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2SK542
2SK542Ã
transistor et 454
2sk542
DC-DC H14
F530
T108
T460
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JE 800 transistor
Abstract: UPA76ha upa76 PA76HA KJE transistor pa76h JE 33 KJE 17 transistor B0188 361-s
Text: NEC W T / \ M À f 7 'S ' h =7 Com pound Transistor ¿¿PA76HA t: ^ n p n x >; □ h^ * N PN Silicon Epitaxial Compound Transistor Differentia! Amplifier ^ f^ H l/PA C K A G E DIMENSIONS if t * / F E A T U R E S O l c h i p m iÊT ibètztb , -< 714 / V b e = 2 m V T Y P . )
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uPA76HA
JE 800 transistor
upa76
PA76HA
KJE transistor
pa76h
JE 33
KJE 17 transistor
B0188
361-s
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transistor f420
Abstract: transistor BJ 115 F420 transistor t514 TRANSISTOR ZT 5551 2SK67A transistor bt 667 TCA561 2S30 T010
Text: NEC j m^Tiytn A Junction Field Effect Transistor 2SK67A E C M 4 > tf- ? > X N-Channel Silicon Ju n ctio n Field Effect Transistor ECM Im pedance C onverter W-mm/ P A C K A G E D IM E N S IO N S o M 'm m t T t o Unit : mm t ItMMTto OECM-i > o Y - h 2 .9 ± 0.2
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2SK67A
t11-or-h
t1780
transistor f420
transistor BJ 115
F420 transistor
t514 TRANSISTOR
ZT 5551
2SK67A
transistor bt 667
TCA561
2S30
T010
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BFR15A
Abstract: No abstract text available
Text: SIEM EN S NPN Silicon RF Transistor BFR 15A • For broadband amplifiers up to 1 G H z at collector currents up to 20 mA. E S D : Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFR15A B F R 15A Q62702-F460
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BFR15A
BFR15A
Q62702-F460
fl235b05
GDb72b3
EHT08040
flE35b05
0Db72b4
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2SC3733
Abstract: 2SC3733-T La HL33 2SA1460 IMWS1
Text: SEC j m = f T iY C * S ilicon T ran sis to r i 2 '> 7 iV V & is •; n > P N P :e S A 1 4 6 ^ PNP Silicon Epitaxial Transistor High Speed Switching, High Frequency Amplifier
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2SA1460
2SC3733
12/PACKAGE
PWS10
CycleS50
2SC3733-T
La HL33
2SA1460
IMWS1
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Untitled
Abstract: No abstract text available
Text: SG S-TH O M SO N RfflD0lsi i[Liera®[i!lDS$ BUF460AV NPN TRANSISTOR POWER MODULE . . . . . . . EASY TO DRIVE TECHNOLOGY ETD HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE (2500V RMS) EASY TO MOUNT
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BUF460AV
SC04840
F460AV
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diode 3FT 87
Abstract: B20200 TRANSISTOR 3FT 87 51135 M208
Text: 2DI5OD-O5OA 50a ï ± / < 7 — ^ POWER TRANSISTOR MODULE • i t S : Features • High Current • hFE^iSiu High DC Current Gain • Insulated Type : Applications "/J- • • DC ^ — High Power Switching Uninterruptible Power Supply 9VM DC Motor Controls
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1DI300M-120
Abstract: T151 T810 b336
Text: DI300M-120 /< 7_ =l - \ s y : Outline Drawings 10 13 21 r r T POWER TRANSISTOR MODULE * Features • High Arm Short Circuit Capability • hFE^Biv,' • 7 l) — High DC Current Gain U > ? ? ' % ' — K rtJR • IfeiiiJK Including Freew h eelin g Diode
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DI300M-120
E82988
I95t/R89
Shl50
1DI300M-120
T151
T810
b336
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Untitled
Abstract: No abstract text available
Text: ETK81-O5O 50a S ± /'7 — ¡V POWER TRANSISTOR MODULE Features 7 • • ;- * * y • hFE/P'Bjv.' • *- fa r Including Free Wheeling Diode High DC Current Gain Insulated Type | * Applications Power Switching • AC • DC Ç — AC Motor Controls • Uninterruptible Power Supply
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ETK81-O5O
Ib231
I95t/R89)
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B166
Abstract: 6DI50M-050
Text: 6D I50M -050 50 a IW fiT tii • Outline Drawings POWER TRANSISTOR MODULE ■ t t f t : Features • SfthpE • High DC Current Gain High Speed Switching : A p p lic a tio n s • illffl- fV - 'i—^ General Purpose Inverter • mznwM Uninterruptible Power Supply
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6DI50M-050
E3Ti5S35^
19S24
l95t/R89
B166
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Untitled
Abstract: No abstract text available
Text: 6DI15M-12005A y<r7 - h *7 È ± 'N ° 9 — i. — : Outline Drawings POWER TRANSISTOR MODULE 93 I Features 26.5 12.5 • u High Arm Short Circuit Capability • hFEA^v,' High DC Current Gain • yyj — —KF*g Including Freewheeling Diode • ifefeii&JT2 Insulated Type
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6DI15M-12005A)
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3ft 05 transistor
Abstract: diode F460 c2kc 2di100d050 3Ft transistor MJE 340 transistor 2DI100D-050 T151 T930 3C140
Text: 2DI100D-050 iooa POWER TRANSISTOR MODULE Features • 7 U - ^ * i'J >9$-4 • KF*9flK Including Free Wheeling Diode High DC Current Gain • Insulated Type • f f liz i : A p p lic a tio n s • ^^^3* " / ¥ > $ HigH Power Switching • AC ^ —9 AC Motor Controls
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2DI100D-050
l95t/R89
3ft 05 transistor
diode F460
c2kc
2di100d050
3Ft transistor
MJE 340 transistor
T151
T930
3C140
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e5kk
Abstract: No abstract text available
Text: 2DI3OZ-1OO 30a : O utline Draw ings POWER TRANSISTOR MODULE F e a tu re s • «¡W/± High Voltage • 7 U— ') > * f f • i ' t — Krt/Si Including Free Wheeling Diode • ASO A'"/a V-' Excellent Safe Operating Area • M i WM Insulated Type LAMPNo 10
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E82988
dl-1231
e5kk
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transistor AJ
Abstract: No abstract text available
Text: 2DI100Z-1200OOA ' <T7 - Y = 7 T ± ,* 9 — 3 .- J U I : Out l i ne D r a w in g s POWER TRANSISTOR MODULE : Features • High Voltage 9*4 • ASO K rti Including Free W heeling Diode Excellent Safe Operating Area • ifciWM Insulated Type *. A p p lica tio n s
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2DI100Z-1200OOA)
transistor AJ
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transistor B414
Abstract: transister 6DI15M-120
Text: 6DI15M-12005A -'1?r7 — I* È ± 'N ° 9 — — )l* POWER TRANSISTOR MODULE • fë d l: : Features • High Arm Short Circuit Capability • hFE A ^v,' High DC Current Gain • 7 l) — Including F reew heeling Diode Insulated Type : Applications • i/L E K > ' < — 9
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6DI15M-12005A)
transistor B414
transister
6DI15M-120
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1FW transistor
Abstract: WFs transistor 1FW 75 1FW 51 transistor 6DI30Z-120 M606 T460
Text: 6DI3OZ-12O 30a : Outline Drawings — )V POWER TRANSISTOR MODULE . . i . .j. •4$« ‘ 1 High Voltage >7>; u i* J f-t j F e a tu re s ■U l(U Il K rt* • A S O ^ / a L' BV EV BWCW M t Including Free W heeling Diode Excellent Safe Operating Area Insulated Type
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6DI3OZ-12O
I95t/R89)
1FW transistor
WFs transistor
1FW 75
1FW 51 transistor
6DI30Z-120
M606
T460
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DIODE B36
Abstract: ml25 M104 T151 ETN85-O5O Transistor B36
Text: ETN85-O5O 300a POWER TRANSISTOR MODULE • f ô f t ^ Featurés • 7 'J — 'J K rt/K Including Free Wheeling Diode • ASO ti'l a ^ v Excellent Safe Operating Area •m m Insulated Type ■ ffliÊ : A p p lic a tio n s " jT • High Power Switching • AC ^ —
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ETN85-O5O
E82988
19S24^
095t/R89
DIODE B36
ml25
M104
T151
Transistor B36
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LG tv
Abstract: No abstract text available
Text: 2 D 1 I 5 O Z - 1 O O i 5 0 A D.— Jl" , ± / ' ï r7 — l i W ' + ï i : Outline Drawings POWER TRANSISTOR MODULE : Features • SWEE High Voltage • 7 'J — j f î 'f '} > * ? -f + — K r tiK • ASO Including Free W heeling Diode Excellent Safe Operating Area
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l95t/R89
LG tv
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Untitled
Abstract: No abstract text available
Text: ETM36-O3O 200a £ ± / « 7 — : O utline D raw ing s POWER TRANSISTOR MODULE F e a tu re s \ High Current • h F E *,ig n High DC Current Gain <> £ Non Insulated T yp e p u i Uk mmi wmm 2-» »V/ IW | i| : Applications High Power Switching “T¿r Uninterruptible Power Supply
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ETM36-O3O
I95t/RB9)
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Untitled
Abstract: No abstract text available
Text: 2DI50M -120 50A IW & ’+ jä I Outline Drawings / ' 7 — h 7 POWER TRANSISTOR MODULE Features • • L' High Arm Short Circuit Capability • hFE*''Sv.' High DC Current Gain • ~7X) x) ' s W A K F*93R Including Freewheeling Diode • i f e t I n s u l a t e d Type
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2DI50M
E82988
95t/R
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M206
Abstract: T930 freewheeling diode 4.5A
Text: 1DI5OF-12O 50a • £ ± , < r j - = £ ï ! ’= L - ) \ , POWER TRANSISTOR MODULE : Features • fiiliJ ï H igh V olta ge 97V — V > ? Ÿ ^ 'X —VfàWL • A S O /^ jE i' In c lu d in g Free W h e e lin g D io d e E xcellent Safe O p e ra tin g Area
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1DI5OF-12O
l95t/R89
M206
T930
freewheeling diode 4.5A
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M606
Abstract: T810
Text: 6DI5OZ-12O 50a ✓<•7— )V ‘ Outline Drawings POWER TRANSISTOR MODULE I 12 0 13 « < OH : Features • S W /E au'cu «V ( v » w E w i = i ' II If 11 •■It« I V (V 91(1 ili i l ti High Voltage • 7 U —f t ' f ' J • A S O ^Ja I ' K r tilt ?
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6DI5OZ-12O
e3Ta5S35%
l95t/R89
M606
T810
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Untitled
Abstract: No abstract text available
Text: 1DI400MN-050 400A e±,(„ 5l-, '• Outline Drawings POWER TRANSISTOR MODULE ■ S J I : Features • h F E ^'^V ' High DC C urre n t Gain • KrtJ •z m n m m t \ : A pplications >'< — 9 • d General Purpose Inverter • U n in te rru p tib le P ow er S u pp ly
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1DI400MN-050
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