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    TRANSISTOR G1 Search Results

    TRANSISTOR G1 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR G1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


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    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UD22K Preliminary DUAL TRANSISTOR DIGITAL TRANSISTOR BUILT-IN RESISTORS  DESCRIPTION The UTC UD22K is a dual transistor, including an NPN transistor and a PNP transistor.  FEATURES * Built-in bias resistors that implies easy ON/OFF applications.


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    PDF UD22K UD22K UD22KG-AL6-R OT-363 QW-R221-020

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


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    PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    MMBT5551A

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain . 2 1 3 MARKING G1 SOT-23 *Pb-free plating product number:MMBT5551L PIN CONFIGURATION


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    PDF MMBT5551 OT-23 MMBT5551L MMBT5551-AE3-R MMBT5551L-AE3-R OT-23 QW-R206-010 MMBT5551A

    transistor case To 106

    Abstract: BUT11A Transistor morocco 1300
    Text: BUT11A HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY FAST SWITCHING SPEED APPLICATIONS: FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS ■ DESCRIPTION


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    PDF BUT11A BUT11A O-220 O-220 transistor case To 106 Transistor morocco 1300

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    Abstract: No abstract text available
    Text: BUT11A HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY FAST SWITCHING SPEED APPLICATIONS: FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS ■ DESCRIPTION


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    PDF BUT11A BUT11A O-220 O-220

    Untitled

    Abstract: No abstract text available
    Text: BUT11A HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY FAST SWITCHING SPEED APPLICATIONS: ■ FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS DESCRIPTION


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    PDF BUT11A BUT11A O-220 O-220

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UG9H Preliminary DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTORS  DESCRIPTION The UTC UG9H is a dual digital transistor, the transistor elements are independent and obviating interference, so the mounting cost and


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    PDF OT-363 QW-R218-026

    Transistor morocco 1300

    Abstract: but11a BUT11A APPLICATION ST BUT11A
    Text: BUT11A HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY FAST SWITCHING SPEED APPLICATIONS: FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS ■ DESCRIPTION


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    PDF BUT11A BUT11A O-220 O-220 Transistor morocco 1300 BUT11A APPLICATION ST BUT11A

    marking G1 sot23 UTC

    Abstract: No abstract text available
    Text: UTC MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain 2 1 APPLICATIONS *Telephone switching circuit *Amplifier 3 MARKING SOT-23 G1 1:EMITTER 2:BASE 3:COLLECTOR


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    PDF MMBT5551 OT-23 QW-R206-010, marking G1 sot23 UTC

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UG9H Preliminary DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTORS  DESCRIPTION The UTC UG9H is a dual digital transistor, the transistor elements are independent and obviating interference, so the mounting cost and


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    PDF OT-26 QW-R218-026

    high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz

    Abstract: S11A1 Glossary of Microwave Transistor Terminology
    Text: High-Frequency Transistor Primer Part I Silicon Bipolar Electrical Characteristics Table of Contents I. Transistor Structure Types . A. Bipolar .


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    PDF 5966-3085E high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz S11A1 Glossary of Microwave Transistor Terminology

    Untitled

    Abstract: No abstract text available
    Text: BUT11A HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY FAST SWITCHING SPEED APPLICATIONS: FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS s t ■


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    PDF BUT11A BUT11A O-220 O-220

    6R450E6

    Abstract: E6 DIODE diode smd E6 IPx60R450E6 JESD22 6R45 to252 footprint wave soldering TRANSISTOR SMD MARKING CODE 42 IPA60R450E6
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R450E6 Data Sheet Rev. 2.0, 2010-07-26 Final Industrial & Multimarket 600V CoolMOS™ E6 Power Transistor 1 IPD60R450E6, IPP60R450E6 IPA60R450E6 Description


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    PDF IPx60R450E6 IPD60R450E6, IPP60R450E6 IPA60R450E6 6R450E6 E6 DIODE diode smd E6 IPx60R450E6 JESD22 6R45 to252 footprint wave soldering TRANSISTOR SMD MARKING CODE 42 IPA60R450E6

    65C6600

    Abstract: ipa65r600c6 TRANSISTOR SMD MARKING CODE 2A IPx65R600C6 ID32 MOSFET TRANSISTOR SMD MARKING CODE 11 IPI65R600C6 infineon marking TO-252 IPD65R600C6 ipa65r
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPx65R600C6 Data Sheet Rev. 2.0, 2010-08-19 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor 1 IPD65R600C6, IPI65R600C6 IPB65R600C6, IPP65R600C6


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    PDF IPx65R600C6 IPD65R600C6, IPI65R600C6 IPB65R600C6, IPP65R600C6 IPA65R600C6 65C6600 ipa65r600c6 TRANSISTOR SMD MARKING CODE 2A IPx65R600C6 ID32 MOSFET TRANSISTOR SMD MARKING CODE 11 IPI65R600C6 infineon marking TO-252 IPD65R600C6 ipa65r

    6R600C6

    Abstract: MOSFET TRANSISTOR SMD MARKING CODE 11 IPA60R600C6 IPB60R600C6 IPD60R600C6 IPP60R600C6 JESD22 to252 footprint wave soldering Diode SMD SJ 19
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R600C6 Data Sheet Rev. 2.0, 2009-08-27 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPD60R600C6, IPB60R600C6 IPP60R600C6, IPA60R600C6


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    PDF IPx60R600C6 IPD60R600C6, IPB60R600C6 IPP60R600C6, IPA60R600C6 6R600C6 MOSFET TRANSISTOR SMD MARKING CODE 11 IPA60R600C6 IPB60R600C6 IPD60R600C6 IPP60R600C6 JESD22 to252 footprint wave soldering Diode SMD SJ 19

    65c6380

    Abstract: IPP65R380C6 IPB65R380C6 SJ 49A ipa65r
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPx65R380C6 Data Sheet Rev. 2.0, 2010-10-22 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor 1 IPD65R380C6, IPI65R380C6 IPB65R380C6, IPP65R380C6


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    PDF IPx65R380C6 IPD65R380C6, IPI65R380C6 IPB65R380C6, IPP65R380C6 IPA65R380C6 65c6380 IPP65R380C6 IPB65R380C6 SJ 49A ipa65r

    6R520C6

    Abstract: IPA60R520C6 IPD60R520C6 IPP60R520C6 JESD22 SMD mosfet MARKING code C6 TRANSISTOR SMD MARKING CODE 512 6R520C
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R520C6 Data Sheet Rev. 2.0, 2009-09-17 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPD60R520C6, IPP60R520C6 IPA60R520C6 Description


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    PDF IPx60R520C6 IPD60R520C6, IPP60R520C6 IPA60R520C6 6R520C6 IPA60R520C6 IPD60R520C6 IPP60R520C6 JESD22 SMD mosfet MARKING code C6 TRANSISTOR SMD MARKING CODE 512 6R520C

    SMD TRANSISTOR MARKING code TC

    Abstract: SMD mosfet MARKING code C6 65C6190 g1 TRANSISTOR SMD MARKING CODE IPP65R190C6 IPB65R190C6 Diode type SMD marking SJ transistor smd code marking KEY Diode SMD SJ 19 ipa65r
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPx65R190C6 Data Sheet Rev. 2.0, 2011-05-09 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor 1 IPA65R190C6, IPB65R190C6 IPI65R190C6, IPP65R190C6


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    PDF IPx65R190C6 IPA65R190C6, IPB65R190C6 IPI65R190C6, IPP65R190C6 IPW65R190C6 SMD TRANSISTOR MARKING code TC SMD mosfet MARKING code C6 65C6190 g1 TRANSISTOR SMD MARKING CODE Diode type SMD marking SJ transistor smd code marking KEY Diode SMD SJ 19 ipa65r

    sot23 g1

    Abstract: MMBT5551
    Text: UTC MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain 2 1 APPLICATIONS 3 *Telephone switching circuit *Amplifier MARKING SOT-23 G1 1:EMITTER 2:BASE 3:COLLECTOR


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    PDF MMBT5551 OT-23 QW-R206-010 sot23 g1 MMBT5551

    high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz

    Abstract: Glossary of Microwave Transistor Terminology
    Text: High-Frequency Transistor Primer Part I Silicon Bipolar Electrical Characteristics Table of Contents I. Transistor Structure Types . A. Bipolar .


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    PDF 5966-3085E high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz Glossary of Microwave Transistor Terminology

    BFR96

    Abstract: BFR96 TRANSISTOR transistor bfr96
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor BFR96 The BFR96 transistor uses the same state-of-the-art microwave transistor chip which features fine-line geometry, ion-implanted arsenic emitters and gold top metallization. This transistor is intended for low-to-medium power amplifiers


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    PDF BFR96 BFR96 D10b3 BFR96 TRANSISTOR transistor bfr96

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    Untitled

    Abstract: No abstract text available
    Text: MJE13007 SILICON NPN SWITCHING TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR . HIGH CURRENT CAPABILITY APPLICATIONS . SWITCHING REGULATORS . MOTOR CONTROL DESCRIPTION The MJE13007 is a silicon multiepitaxial mesa NPN power transistor mounted in Jedec T0-220


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    PDF MJE13007 MJE13007 T0-220