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    TRANSISTOR GK 47 Search Results

    TRANSISTOR GK 47 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR GK 47 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    h11cx

    Abstract: GK transistor in5060 SC146D H11C H11C3 gk 02 a 041 H11C1 IN5060 diode GK 74 transistor
    Text: PHOTO SCR OPTOCOUPLERS H11C1 H11C2 H11C3 H11C4 PACKAGE H11C5 SCHEMATIC ANODE 1 6 H11C6 6 GATE 6 CATHODE 2 5 ANODE 1 N/C 3 1 4 CATHODE 6 1 DESCRIPTION The H11C series consists of a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled


    Original     		PDF H11C1 H11C2 H11C3 H11C4 H11C5 H11C6 E90700 H11C1 00V/400V h11cx GK transistor in5060 SC146D H11C H11C3 gk 02 a 041 IN5060 diode GK 74 transistor

    h11cx

    Abstract: GK transistor PHOTO SCR definition IN5060 diode SC146D DATA SHEET Photo SCR H11C3 H11C5 H11C4 scr pins
    Text: PHOTO SCR OPTOCOUPLERS H11C1 H11C2 H11C3 H11C4 PACKAGE H11C5 SCHEMATIC ANODE 1 6 H11C6 6 GATE 6 CATHODE 2 5 ANODE 1 N/C 3 1 4 CATHODE 6 1 DESCRIPTION The H11C series consists of a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled


    Original     		PDF H11C1 H11C2 H11C3 H11C4 H11C5 H11C6 E90700 H11C1 00V/400V h11cx GK transistor PHOTO SCR definition IN5060 diode SC146D DATA SHEET Photo SCR H11C3 H11C5 H11C4 scr pins

    s41 hall sensor

    Abstract: Russian diode Transistor ML614S IC6001 FP99
    Text: ORDER NO. DSC0703019CE B26 Digital Camera DMC-TZ3P DMC-TZ3PC DMC-TZ3PL DMC-TZ3EB DMC-TZ3EE DMC-TZ3EF DMC-TZ3EG DMC-TZ3EGM DMC-TZ3GC DMC-TZ3GD DMC-TZ3GK DMC-TZ3GN DMC-TZ3GT DMC-TZ3SG DMC-TZ2P DMC-TZ2PC DMC-TZ2PL DMC-TZ2EB DMC-TZ2EE DMC-TZ2EF DMC-TZ2EG DMC-TZ2EGM


    Original     		PDF DSC0703019CE s41 hall sensor Russian diode Transistor ML614S IC6001 FP99

    distance measure ultrasonic transducer

    Abstract: ceag ghg PBT GK 20 gl ultrasonic sensor Stahl 9303 ultrasonics circuits diagram 7 segment display 5011 K1207 ghg 44 ceag GK 74 transistor
    Text: Level and Pressure Product Information Ultrasonics 1 5,00 m 2 5,00 m 1 2 3 4 VEGASON Contents Contents 1 Product description 1.1 2 Function and application 2.1 2.2 2.3 3 Meas. range . 52


    Original     		PDF NL-3800 CH-8330 distance measure ultrasonic transducer ceag ghg PBT GK 20 gl ultrasonic sensor Stahl 9303 ultrasonics circuits diagram 7 segment display 5011 K1207 ghg 44 ceag GK 74 transistor

    schematic diagram 48V telecom ups

    Abstract: 0.1u 50v LED pspice datasheet White LED pspice model schematic diagram 48V power supply 1N4002 diode download datasheet DIP 24V TO 5V LM SQUARE WAVE TO SINE WAVE schematic diagram telephone handset circuit schematic diagram BNC connector 50 ohm
    Text: Am79489 SLIC Evaluation Board User’s Guide Ver. 1.0 April 8, 1998 Advanced Micro Devices, Inc. Communications Products Division Public Infrastructure Products Document Number: CPD/P-146 This document discusses the operation of the Am79489 SLIC device Evaluation Board.


    Original     		PDF Am79489 CPD/P-146 RJ-11-type schematic diagram 48V telecom ups 0.1u 50v LED pspice datasheet White LED pspice model schematic diagram 48V power supply 1N4002 diode download datasheet DIP 24V TO 5V LM SQUARE WAVE TO SINE WAVE schematic diagram telephone handset circuit schematic diagram BNC connector 50 ohm

    pin configuration transistor bd140

    Abstract: L3234 BD140 application circuits circuits CR injector driver 100nF/5V capacitor C100 L3234T L3235 PLCC28 V100
    Text: L3234 L3235 HIGHLY INTEGRATED SLIC KIT TARGETED TO PABX AND KEY SYSTEM APPLICATIONS HIGHLY INTEGRATED SUBSCRIBER LINE INTERFACE KIT FOR PABX AND KEY SYSTEM APPLICATIONS IMPLEMENTS ALL KEY ELEMENTS OF THE BORSCHT FUNCTION INTEGRATED ZERO CROSSING BALANCED RINGING INJECTION ELIMINATES EXTERNAL RELAY AND CENTRALISED RINGING


    Original     		PDF L3234 L3235 L3234/L3235 L3234T/L3235T pin configuration transistor bd140 L3234 BD140 application circuits circuits CR injector driver 100nF/5V capacitor C100 L3234T L3235 PLCC28 V100

    RSN 310 r 36

    Abstract: AM79489 100U GR-1089-CORE JR10 relay JR2 AMD slac White LED pspice model am79489a
    Text: Am79489 SLIC Evaluation Board User’s Guide 1999 The contents of this document are provided in connection with Advanced Micro Devices, Inc. “AMD” products. AMD makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves


    Original     		PDF Am79489 1N4003 220nF 2200pF RSN 310 r 36 100U GR-1089-CORE JR10 relay JR2 AMD slac White LED pspice model am79489a

    pin configuration transistor bd140

    Abstract: 1N4007 L3234 L3235N STLC5046 STLC5048 TQFP44 V100 CR injector driver MJE350 equivalent
    Text: L3234 L3235N  HIGHLY INTEGRATED SLIC KIT TARGETED TO PABX AND KEY SYSTEM APPLICATIONS HIGHLY INTEGRATED SUBSCRIBER LINE INTERFACE KIT FOR PABX AND KEY SYSTEM APPLICATIONS IMPLEMENTS ALL KEY ELEMENTS OF THE BORSCHT FUNCTION INTEGRATED ZERO CROSSING BALANCED


    Original     		PDF L3234 L3235N L3234/L3235N L3234T/L3235NT pin configuration transistor bd140 1N4007 L3234 L3235N STLC5046 STLC5048 TQFP44 V100 CR injector driver MJE350 equivalent

    100nF/5V capacitor

    Abstract: L3234 capacitor 100MF 100v PLCC28 layout 50hz 100hz generator BD140 ST MICROELECTRONICS pabx ring generator C100 L3234T L3235
    Text: L3234 L3235 HIGHLY INTEGRATED SLIC KIT TARGETED TO PABX AND KEY SYSTEM APPLICATIONS HIGHLY INTEGRATED SUBSCRIBER LINE INTERFACE KIT FOR PABX AND KEY SYSTEM APPLICATIONS IMPLEMENTS ALL KEY ELEMENTS OF THE BORSCHT FUNCTION INTEGRATED ZERO CROSSING BALANCED RINGING INJECTION ELIMINATES EXTERNAL RELAY AND CENTRALISED RINGING


    Original     		PDF L3234 L3235 L3234/L3235 L3234T/L3235T 100nF/5V capacitor L3234 capacitor 100MF 100v PLCC28 layout 50hz 100hz generator BD140 ST MICROELECTRONICS pabx ring generator C100 L3234T L3235

    injector driver

    Abstract: ZTX 151 BD140 ST MICROELECTRONICS
    Text: L3234 L3235 HIGHLY INTEGRATED SLIC KIT TARGETED TO PABX AND KEY SYSTEM APPLICATIONS HIGHLY INTEGRATED SUBSCRIBER LINE INTERFACE KIT FOR PABX AND KEY SYSTEM APPLICATIONS IMPLEMENTS ALL KEY ELEMENTS OF THE BORSCHT FUNCTION INTEGRATED ZERO CROSSING BALANCED RINGING INJECTION ELIMINATES EXTERNAL RELAY AND CENTRALISED RINGING


    Original     		PDF L3234 L3235 L3234/L3235 L3234T/L3235T L3234 injector driver ZTX 151 BD140 ST MICROELECTRONICS

    CR injector driver

    Abstract: TQFP44 package 1N4007 L3234 L3235N MJE350 STLC5046 STLC5048 TQFP44 V100
    Text: L3234 L3235N HIGHLY INTEGRATED SLIC KIT TARGETED TO PABX AND KEY SYSTEM APPLICATIONS HIGHLY INTEGRATED SUBSCRIBER LINE INTERFACE KIT FOR PABX AND KEY SYSTEM APPLICATIONS IMPLEMENTS ALL KEY ELEMENTS OF THE BORSCHT FUNCTION INTEGRATED ZERO CROSSING BALANCED


    Original     		PDF L3234 L3235N L3234/L3235N L3234T/L3235NT CR injector driver TQFP44 package 1N4007 L3234 L3235N MJE350 STLC5046 STLC5048 TQFP44 V100

    L3234

    Abstract: 50hz 100hz generator L3234T L3235 PLCC28 V100 C100 st BD140
    Text: L3234 L3235 HIGHLY INTEGRATED SLIC KIT TARGETED TO PABX AND KEY SYSTEM APPLICATIONS HIGHLY INTEGRATED SUBSCRIBER LINE INTERFACE KIT FOR PABX AND KEY SYSTEM APPLICATIONS IMPLEMENTS ALL KEY ELEMENTS OF THE BORSCHT FUNCTION INTEGRATED ZERO CROSSING BALANCED


    Original     		PDF L3234 L3235 L3234/L3235 L3234T/L3235T L3234 50hz 100hz generator L3234T L3235 PLCC28 V100 C100 st BD140

    Legerity SLAC

    Abstract: Le79489 JR10 BNC-2120 gk71 100U GR-1089-CORE
    Text: Le79489 SLIC Device Evaluation Board User’s Guide Rev. B, Ver. 2 2007 For more information about all Zarlink products visit our Web Site at: www.zarlink.com Information relating to products and services furnished herein by Zarlink Semiconductor Inc. trading as Zarlink Semiconductor or its subsidiaries collectively


    Original     		PDF Le79489 330nF 1N4003 Le79489 220nF 2200pF Legerity SLAC JR10 BNC-2120 gk71 100U GR-1089-CORE

    Le79489

    Abstract: 100U GR-1089-CORE JR10 Zarlink Programmable SLIC zarlink label RSN 310 R 36 White LED pspice model Le79Q02
    Text: Le79489 SLIC Device Evaluation Board User’s Guide Rev. B, Ver. 2 2007 For more information about all Zarlink products visit our Web Site at www.zarlink.com Information relating to products and services furnished herein by Zarlink Semiconductor Inc. or its subsidiaries collectively “Zarlink” is believed to be reliable.


    Original     		PDF Le79489 Le79489 220nF 2200pF 1N4003 P0640EA70 100U GR-1089-CORE JR10 Zarlink Programmable SLIC zarlink label RSN 310 R 36 White LED pspice model Le79Q02

    B897

    Abstract: No abstract text available
    Text: Optoisolator Specifications H11C1, H11C2, H11C3 Optoisolator GaAs Infrared Emitting Diode and Light Activated SCR INCHES LIMÊTERS N. WIN MAX MAX 8 38 B 89 7 G2 REF 8 64 T h e H I 1C 1, H I 1C 2 a n d H I 1C3 a re g alliu m a rs e n id e , in fra r e d e m ittin g d io d e s co u p le d w ith lig h t activ ated s ilic o n c o n tro lle d


    OCR Scan     		PDF H11C1, H11C2, H11C3 B897

    h11c4

    Abstract: H11C3
    Text: PHOTO SCR OPTOCOUPLERS OPTOELECTRONICS H11C1 H11C2 H11C3 H11C4 H11C5 H11C6 a DESCRIPTION The H11C series consists of a gallium -arsenide infrared em itting diode optically coupled with a light activated silicon controlled rectifier in a dual-in-line package.


    OCR Scan     		PDF H11C1 H11C2 H11C3 H11C4 H11C5 H11C6 H11C1, H11C2, H11C3) H11C4, H11C3

    H11C2 equivalent

    Abstract: HIIC4 sci46d 8T20 rgk 13 st1602 H11C H11C2 220vac relay solid state relay 220v 10a
    Text: PHOTO SCR OPTOCOUPLERS OPTOELECTRONICS H11C1 H11C2 H11C3 H11C4 H11C5 H11C6 DESCRIPTION The H11C series consists of a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled rectifier in a dual-in-line package. FEATURES & APPLICATIONS


    OCR Scan     		PDF H11C1 H11C2 H11C3 H11C4 H11C5H11C6 H11C1, H11C2, H11C3) H11C4, H11C5, H11C2 equivalent HIIC4 sci46d 8T20 rgk 13 st1602 H11C 220vac relay solid state relay 220v 10a

    H11C2-H11C3

    Abstract: Opto-isolator 50V-RGK
    Text: Optoisofator Spécifications H11C1, H11C2, H11C3 Optoisolator GaAs Infrared Emitting Diode and Light Activated SCR T he HI 1C1, HI 1C2 and H11C3 are gallium arsenide, infrared em itting diodes coupled with light activated silicon controlled rectifiers in a dual in-line package. T hese devices are also


    OCR Scan     		PDF H11C1, H11C2, H11C3 H11C3 H11C2-H11C3 Opto-isolator 50V-RGK

    4n4001

    Abstract: 4N4U 4N40 4N39 GE SCR 1000
    Text: G E SOLI» STATE DÌ 3fl7S0fll DDlltflS 0 optoelectronic specification« 7 W /-Î7 ” Photon Coupled Isolator 4N39,4N40 SVM0OI Ga As Infrared Em itting Diode & Light Activated SCR A B C The GE Solid State 4N39 and 4N40 consist of a gallium arsenide, infrared emitting diode coupled with a light activated silicon con­


    OCR Scan     		PDF 3fl750fll 220VAC the4N40 4n4001 4N4U 4N40 4N39 GE SCR 1000

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Automotive applications, Switched Mode Power Supplies SMPS ,


    OCR Scan     		PDF BUK455-60H T0220AB

    Untitled

    Abstract: No abstract text available
    Text: L3234 L3235 f Z J SGS-THOMSON * 7 # . IM « iL i( g T M M D ( g § HIGHLY INTEGRATED SLIC KIT TARGETED TO PABX AND KEY SYSTEM APPLICATIONS • HIGHLY INTEGRATED SUBSCRIBER LINE INTERFACE KIT FOR PABX AND KEY SYS­ TEM APPLICATIONS ■ IMPLEMENTS ALL KEY ELEMENTS OF THE


    OCR Scan     		PDF L3234 L3235 L3234 100jlF 10OnF L3235

    long range Phototransistor Detector 880nm

    Abstract: IR Phototransistor Detector 880nm xenon linear flash lamps varistor xf 030 pnp phototransistor IR LED and photodiode heart rate optocoupler with schmitt trigger input h11c optocoupler Silicon bilateral switch phototransistor ultraviolet
    Text: SYSTEMS DESIGN CONSIDERATIONS EMITTER AND DETECTOR SY S T E M S Light, Irradiance and Effectiveness When the word “ light” is used in this discussion instead of “ electromagnetic radiation,” it does not refer to just the visible part of the spectrum, but to that part of the spectrum where silicon light


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: OM6503SC OM65Q4SC INSULATED G ATE BIPOLARTRANSISTOR IGBT IN A HERMETIC TO-258AA PACKAG E 500 Volt, 20 And 30 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES • Isolated Hermetic Metal Package • High Input Impedance • Low On-Voltage • High Current Capability


    OCR Scan     		PDF OM6503SC OM65Q4SC O-258AA MIL-S-19500, OM6503SC OM65Q3SC

    IGBT in TO92 Package

    Abstract: OM6510SC OM6511SC
    Text: OM 651OSC OM6511SC INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-258AA PACKAGE 500 Volt, 20 And 30 Amp, N-Channel IGBT With a Soft Recovery Diode In A Hermetic Metal Package F EA TU R E S Isolated Hermetic Metal P ackage High Input Impedance Low On-Voltage


    OCR Scan     		PDF OM6510SC OM6511 O-258AA MIL-S-19500, IGBT in TO92 Package OM6511SC