TRANSISTOR H9 Search Results

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

transistor h9

Abstract: H9 sot 23 H9 transistor marking LDTC124GLT1G H922
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTC124GLT1G Applications Inverter, Interface, Driver • 3 Features 1 Built-in bias resistors enable the configuration of an

H9 transistor marking

Abstract: LDTC124GWT1G transistor h9 MARKING H9 h922 h9 MARKING
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTC124GWT1G Applications Inverter, Interface, Driver 3 • Features 1 Built-in bias resistors enable the configuration of an

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

2SC763

Abstract: 2SC763 C 2SC7
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC763 FOR FM RADIO HIGH FREQUENCY AMPLIFY, FREQUENCY EXCANGE, APPLICATION SIUCON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC763 is a silicon NPN epitaxial type transistor designed for high frequency amplify of FM radio tuner application.

RN1910FS

Abstract: RN1911FS RN2910FS RN2911FS
Contextual Info: RN2910FS,RN2911FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN2910FS, RN2911FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Reducing the parts count enables the manufacture of ever more

BUK474-600B

Contextual Info: Philips Com ponents D ata sheet status Preliminary specification d ate of issue March 1991 BUK474-600B PowerMOS transistor SbE D PHILIPS INTERNATIONA GENERAL DESCRIPTION N -channel enhancem ent mode field-effect power transistor in a plastic full-pack envelope.

Contextual Info: RN2910FS,RN2911FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2910FS,RN2911FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 1.0±0.05 package. C B fS6 E Maximum Ratings (Ta = 25°C) (Q1, Q2 common)

Contextual Info: RN2910FS,RN2911FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN2910FS, RN2911FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Reducing the parts count enables the manufacture of ever more

RN2911FS

Abstract: RN1910FS RN1911FS RN2910FS H9 transistor marking
Contextual Info: RN2910FS,RN2911FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN2910FS, RN2911FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications C B 2 5 3 4 +0.02 0.48 -0.04 Equivalent Circuit and Bias Resistor Values

Contextual Info: RN2910FS,RN2911FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN2910FS, RN2911FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 5 3 4 0.48 C B 2 +0.02 -0.04 Equivalent Circuit and Bias Resistor Values

BUF644

Abstract: B12-B1 buf644 transistor
Contextual Info: Tem ic BUF644 Semiconductors Silicon NPN High Voltage Switching Transistor Features • • • • • • • • • Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation

MARKING CODE ht9

Abstract: MARKING ht9 sot363 h9 marking OT363 SOT363 marking code H9 transistor h9 MARKING HT9 SC88 SOT363 plastic package Ht9 MARKING CODE hT9 marking
Contextual Info: DISCRETE SEMICONDUCTORS SHEET PUMH9 NPN resistor-equipped double transistor 1999 May 06 Product specification Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN resistor-equipped double transistor PUMH9 FEATURES • T ransistors with built-in bias resistors R1 typ. 10 k£2

transistor h9

Abstract: PIMH9
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D302 PIMH9 NPN resistor-equipped double transistor; R1 = 10 kΩ, R2 = 47 kΩ Product specification 2001 Sep 13 Philips Semiconductors Product specification NPN resistor-equipped double transistor; R1 = 10 kΩ, R2 = 47 kΩ

B12-B1

Contextual Info: T e m ic BUF744 Semiconductors Silicon NPN High Voltage Switching Transistor Features • • • • • • • • • Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4

transistor 2n5038

Abstract: 2N5038
Contextual Info: Data Sheet No. 2N5038 Generic Part Number: 2N5038 Type 2N5038 Geometry H9352 Polarity NPN Qual Level: Pending REF: MIL-PRF-19500/439 Features: • General-purpose high power transistor for use in high speed switching applications. • Housed in TO-3 case.

h935

Contextual Info: Data Sheet No. 2N5039 Generic Part Number: 2N5039 Type 2N5039 Geometry H9352 Polarity NPN Qual Level: Pending REF: MIL-PRF-19500/439 Features: • General-purpose high power transistor for use in high speed switching applications. • Housed in TO-3 case.

Contextual Info: N AMER P H I L I PS/DISCRETE bbS3131 00E0S7Q fi E5E D BUK427-450B PowerMOS transistor r - 3<3-ii G E N E R A L D E S C R IP T IO N Q U IC K R E F E R E N C E D A TA N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in

TRANSISTOR MARKING 707

Abstract: H9 transistor marking transistor h9
Contextual Info: UMH9N IMH9A Transistor, digitai, dual, NPN, with 2 resistors Features Dimensions Units : mm • available in UMT6 (UM6) and SMT6 (IMD, SC-74) package • package marking: UMH9N and IMH9A; H9 • • • UMH9N (UMT6) 2.0+0.2 1,3±0.1 ,i. 3 i j 2 :p i 1 I