TRANSISTOR HD MARKING Search Results

Contextual Info: MOTOROLA Order this document by MMSF4N01 HD/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M M S F 4N 01H D Medium Power Surface Mount Products M otorola Preferred Device TMOS Single N -C hannel Field E ffect Transistors MiniMOS™ devices are an advanced series of power MOSFETs

Contextual Info: Document Number: AFT27S006N Rev. 0, 10/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.

2SK3079A

Abstract: transistor HD marking 1350D
Contextual Info: 2SK3079A Preliminary TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3079A 470 MHz Band Amplifier Applications Unit: mm • Output power: Po = 33.50dBmW 2.2 W (min) · Gain: Gp = 13.50dB (min) · Drain Efficiency: ηD = 50.0% (min) Maximum Ratings (Ta = 25°C)

Contextual Info: Document Number: AFT27S006N Rev. 1, 11/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.

transistor equivalent table

Abstract: NPN PNP sot-563 sc74a A6 MARKING SC-74 BD NPN transistors transistor fg 680 gd marking H6 sot 23 SOT-353 MARKING G2 SC-88A npn SC-74 H2
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Marking Equivalent Collector Collector to DC Current Gain Current Emitter Voltage HFE @ VO / IO VCC IO V mA Min-Max V / mA Saturation Voltage Bias Collector to Resistor

TRANSISTOR 2n697

Abstract: 2N697S 2N696S 2N697 2N696 TRANSISTOR 2n696
Contextual Info: The documentation and process conversion measures necessary to comply with this amendment shall be completed by 16 May, 2000. MIL-S-19500/99E AMENDMENT 3 16 February, 2000 SUPERSEDING AMENDMENT 2 15 July 1986 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN,

Contextual Info: 2N2857 Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857 is a military qualified silicon NPN transistor also available in commercial version ,

2N2857

Abstract: 2N2857 JANTXV
Contextual Info: 2N2857 Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857 is a military qualified silicon NPN transistor also available in commercial version ,

2N2857 JANTX

Abstract: 2n2857 common base amplifier 2N2857 JANTXV 2N2857 TO72 package 2N2857 JAN SILICON AMPLIFIER TRANSISTOR Qualified per MIL-PRF
Contextual Info: 2N2857 Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857 is a military qualified silicon NPN transistor also available in commercial version ,

2SK3475

Abstract: 0480F
Contextual Info: 2SK3475 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3475 VHF- and UHF-band Amplifier Applications Unit: mm • Output power: PO = 630 mW min · Gain: GP = 14.9dB (min) · Drain efficiency: ηD = 45% (min) Maximum Ratings (Ta = 25°C) Characteristics

2SK3476

Contextual Info: 2SK3476 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3476 VHF- and UHF-band Amplifier Applications Unit: mm • Output power: PO = 7.0 W min · Gain: GP = 11.4dB (min) · Drain efficiency: ηD = 60% (min) Maximum Ratings (Ta = 25°C) Characteristics

2n3019 equivalent

Abstract: 2n3019 transistor test 2N3700 "nickel cap"
Contextual Info: 2N3019 Compliant LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3019 NPN leaded silicon transistor device is military qualified for high-reliability applications. Microsemi also offers numerous other transistor products to meet higher and

Transistor k163

Abstract: A6006 K229A L9112 3225 K30 transistor k72 t8 RA53 thermistor CN701 c828 transistor working H9014
Contextual Info: ORDER NO. CPD0010001C0 Notebook Computer CF-72 This is the Service Manual for the following areas. M .for U.S.A. and Canada E .for U.K. G .for Germany F .for France S .for Sweden T .for Italy P .for Spain Model Number Reference The models in the CF-72 series are numbered in accordance with the types of the CPU, LCD

lg r40 MOTHERBOARD CIRCUIT diagram

Abstract: I7 motherboard circuit diagram intel i5 MOTHERBOARD pcb CIRCUIT diagram schematic diagram converter fdd to usb MC3064 SW801 317 jrc VOLTAGE REGULATOR ATI RAGE mobility m1 CN603 C144* transistor REPLACEMENT
Contextual Info: ORDER NO. CPD0010002C0 Notebook Computer CF-48 This is the Service Manual for the following areas. M .for U.S.A. and Canada E .for U.K. G .for Germany F .for France S .for Sweden T .for Italy P .for Spain Model Number Reference The models in the CF-48 series are numbered in accordance with the types of the CPU, LCD

6822

Abstract: 2N3019S "nickel cap"
Contextual Info: 2N3019S Compliant LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3019S NPN leaded silicon transistor device is military qualified for high-reliability applications. Microsemi also offers numerous other transistor products to meet higher and

handheld scope leader

Abstract: microvision ISL59885ISZ-T7
Contextual Info: Auto-Adjusting Sync Separator for HD and SD Video ISL59885 Features The ISL59885 video sync separator extracts sync timing information from both standard and non-standard video inputs in the presence of Macrovision pulses. The ISL59885 provides horizontal, vertical, and composite sync outputs as well as

2sc3052

Abstract: MARKING HRA MARKING XL
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC3052 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC3052 is a super mini silicon PNP epitaxial type transistor OUTLINE DRAWING designed for low frequency voltage amplify application.

Contextual Info: MOTOROLA O rder this docum ent by M M DF2C01HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M D F2C 01 HD Medium Power Surface Mount Products Motorola Preferred Device Com plem entary TMOS Field Effect Transistors COMPLEMENTARY DUAL TMOS POWER FET

Contextual Info: NJF6510 N-CHANNEL, J-FET DEPLETION MODE TRANSISTOR Screened in reference to MIL-PRF-19500 DESCRIPTION The NJF6510 is ideal for functioning as a VHF and a small signal amplifier. This part number is also an equivalent to the MX2N3822. Important: For the latest information, visit our website http://www.microsemi.com.

Contextual Info: NJF6510 N-CHANNEL, J-FET DEPLETION MODE TRANSISTOR Screened in reference to MIL-PRF-19500 DESCRIPTION The NJF6510 is ideal for functioning as a VHF and a small signal amplifier. This part number is also an equivalent to the MX2N3822. Important: For the latest information, visit our website http://www.microsemi.com.

2n3440 equivalent

Abstract: JAN 2N3439 UA 2N3439 JANTX
Contextual Info: 2N3439 thru 2N3440 Qualified Levels: JAN, JANTX, JANTXV and JANS NPN LOW POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/368 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage.

Contextual Info: 2N3439L thru 2N3440L Qualified Levels: JAN, JANTX, JANTXV and JANS NPN LOW POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/368 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage.

Contextual Info: 2N3439L thru 2N3440L Qualified Levels: JAN, JANTX, JANTXV and JANS NPN LOW POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/368 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage.

transistor HD marking

Contextual Info: TOSHIBA TENTATIVE HN3C14F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3 • ■ 'm ■ m tr r1AF ■ ■ ■ VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Including Two Devices in SM6 Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C)