TRANSISTOR HFT Search Results

TRANSISTOR HFT Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

TRANSISTOR HFT Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor SD335 Abstract: SF126 SF127 SF128 SD337 sd336 SF137 BF241 TRANSISTOR SD349 SD339 Contextual Info: RFT Beschreibung Si-npn-Planar-Epitaxie, TO39 Si-npn-Planar-EpitaxieSC116 NF-Transistor Si-npn-Planar-EpitaxieSC117 NF-Transistor Si-npn-Planar-EpitaxieSC118 NF-Transistor Si-npn-Planar-EpitaxieSC119 NF-Transistor Si-npn-Planar-EpitaxieSC236 NF-Transistor für Vorund Treiberstufen	Original	Si-npn-Planar-EpitaxieSC116 Si-npn-Planar-EpitaxieSC117 Si-npn-Planar-EpitaxieSC118 Si-npn-Planar-EpitaxieSC119 Si-npn-Planar-EpitaxieSC236 Si-npn-Planar-EpitaxieSC237 Si-npn-Planar-EpitaxieSC238 VorSC239 Si-pnp-Planar-EpitaxieSC307 Si-pnp-Planar-EpitaxieSC308 transistor SD335 SF126 SF127 SF128 SD337 sd336 SF137 BF241 TRANSISTOR SD349 SD339	PDF
Halbleiterbauelemente DDR Abstract: elektronik DDR Leistungsdiode Halbleiter-Bauelemente DDR Hallgenerator CSSR silizium diode Contextual Info: Tunneldiode HF-Transistor Diode Kapazitätsdiode NF-Transistor NF-Leistungstransistor Ptot >1W Bauelement 2.Element Hall-Feldsonde CSSR: Silizium Hall-Generator CSSR: Galliumarsenidphosphid HF-Leistungstransistor Hall-Generator DDR: MIS-Transistor strahlungsempfindliches	Original		PDF
Contextual Info: S P R A G U E /S E N IC O N D GROUP 85 14 0 1 9 SPRAGUE. - ^ D • S E M I C O N D S / ICS fiS13Û S 0 D 0C I3flD 7^ 93D 03807 3 SERIES TPQ QUAD TRANSISTOR ARRAYS SERIES TPQ QUAD TRANSISTOR ARRAYS O PRAGUE SERIES TPQ quad transistor arrays ^ are general-purpose silicon transistor arrays	OCR Scan	fiS13Ã 14-pin 0-050A TPQ2221 TPQ2221A 2N3799 TPQ6600A TPQ6700 TPQ7051 TPQ7052	PDF
221A49 Abstract: MGP7N60E OP77 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MGP7N60E/D DATA - DesignerkTM Data Sheet w Insulated Gate Bipoflar Transistor N-Channel Enhancement-Mode MGP7N60E Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination	Original	MGP7N60E/D MGP7N60E Oti21, 24W609 221A49 MGP7N60E OP77	PDF
2N6718 Abstract: IC350 2N6718L Contextual Info: UNISONIC TECHNOLOGIES CO., LTD. 2N6718 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES 1 High Power: 850mW High Current: 1A	Original	2N6718 2N6718 850mW O-126C 2N6718L 2N6718-T6C-A-K 2N6718L-T6C-A-K O-126C QW-R217-007 IC350 2N6718L	PDF
transistor bf 198 Abstract: BF 212 transistor BF198 TFK 214 TFK 544 Contextual Info: BF 198 Silizium-NPN-Planar HF-Transistor Silicon NPN Planar RF Transistor Anwendungen: G eregelte FS-ZF-Verstärkerstufen in Em itterschaltung Applications: C ontrolled video IF am p lifier stages in com m on em itter configuration Besondere Merkmale: Features:	OCR Scan		PDF
Contextual Info: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon Power lan iransistors High Voltage Video Output Transistor D40N The D40N is a silicone plastic encapsulated power transistor for TV video	Original	D40N1 D40N3 04ON6 D40N2 D40N4	PDF
2SC5752 Abstract: 2SC5752-T1 Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5752 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 60 mW 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm	Original	2SC5752 2SC5752-T1 2SC5752 2SC5752-T1	PDF
LG color tv Circuit Diagram schematics Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007 Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007	PDF
IC HXJ 2038 Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan		PDF
nec japan 7812 Abstract: NEC 7812 transistor NEC 7812 7812 nec 2SC5750 2SC5750-T1 7812 4pin R54 Transistor k 3531 transistor TRANSISTOR IC 18751 Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5750 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 30 mW 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm	Original	2SC5750 2SC5750-T1 nec japan 7812 NEC 7812 transistor NEC 7812 7812 nec 2SC5750 2SC5750-T1 7812 4pin R54 Transistor k 3531 transistor TRANSISTOR IC 18751	PDF
1N6227 Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan		PDF
ne678m04-a Abstract: 2SC5753 Contextual Info: NPN SILICON RF TRANSISTOR NE678M04 / 2SC5753 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 60 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm	Original	NE678M04 2SC5753 NE678M04-A 2SC5753-A NE678M04-T2-A 2SC5753-T2-A P15659EJ1V0DS 2SC5753	PDF
p1565 Abstract: 2SC5751 Contextual Info: NPN SILICON RF TRANSISTOR NE677M04 / 2SC5751 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 30 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm	Original	NE677M04 2SC5751 NE677M04-A 2SC5751-A NE677M04-T2-A 2SC5751-T2-A P15657EJ1V0DS p1565 2SC5751	PDF

Contextual Info: , Unc. RF POWER TRANSISTOR 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2SC1946A NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1946A is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHP band mobile radio	Original	2SC1946A 2SC1946A i10dB 175MHr 175MHz,	PDF
nec 14305 Abstract: 14305 NEC k 3918 TRANSISTOR OF IC 7909 2SC5751-T2 2SC5751 Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5751 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 30 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm	Original	2SC5751 2SC5751-T2 nec 14305 14305 NEC k 3918 TRANSISTOR OF IC 7909 2SC5751-T2 2SC5751	PDF
BUK627-400A Abstract: BUK627-400B ha 431 transistor transistor 431 N Contextual Info: N AMER P H I L I P S / D I S C R E T E BSE D • ^53=131 0020bS0 7 ■ PowerMOS transistor Fast Recovery Diode FET BUK627-400A BUK627-400B T -3 7 -II GENERAL DESCRIPTION N-channel enhancem ent mode field-effect power transistor in a plastic full pack envelope.	OCR Scan	BUK627-400A BUK627-400B BUK627 -400A -400B ha 431 transistor transistor 431 N	PDF
Contextual Info: iiA ì A SH E ir. SILICON TRANSISTOR 2SA1400-Z PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3 DESCRIPTION 2SA1400-Z is desig ned fo r High V oltag e S w itch in g , especia lly P A C K A G E DIMENSIONS in m illim e te rs } in H ybrid Integrated Circuits. FEATU RES	OCR Scan	2SA1400-Z 2SA1400-Z 2SC3588-Z lEt-1209) Bas00	PDF
ES403 Abstract: t60404 Contextual Info: MITSUBISHI TRANSISTOR MODULES \| QM100DY-2HK i HIGH POWER SWITCHING USE \ INSULATED TYPE ! - . I «. n QM100DY-2HK • • • • • lc Collector current. 100A	OCR Scan	QM100DY-2HK E80276 E80271 ES403 t60404	PDF
2SC5753 Abstract: NE678M04 NE678M04-T2-A S21E IC pt 2262 ic nec 2051 Contextual Info: NEC's MEDIUM POWER NPN NE678M04 SILICON HIGH FREQUENCY TRANSISTOR FEATURES • NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance +0.40-0.05 2 1.25 0.650.65 2.0±0.1 R55 1 NEC's NE678M04 is fabricated using NEC's HFT3 wafer	Original	NE678M04 NE678M04 2SC5753 NE678M04-T2-A S21E IC pt 2262 ic nec 2051	PDF
QM10 Contextual Info: MITSUBISHI TRANSISTOR MODULES QM100HY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM100HY-2H • to • V cex • hFE Collector current.100A Collector-emitter voltage. 1000V DC current gain. 75	OCR Scan	QM100HY-2H E80276 E80271 Tj-25 QM10	PDF
IGBT 1MBH60-100 Abstract: J9100 Contextual Info: 1MBH60-100 ^ ± IG B T IGBT INSULATED GATE BIPOLAR TRANSISTOR • : Outline Drawings bkü : Features •H i â X ' • i& ü ü in liS • Hi gh Speed Switching Low Saturation Voltage Hfti/tCMOS-ir— MUie • :y High Impedance Gate Small Package 0. 6 * ■ ffliÊ : Applications	OCR Scan	1MBH60-100 l95t/RB9 IGBT 1MBH60-100 J9100	PDF
SLA4061 Abstract: sla6023 equivalent SLA4030 SLA4010 SLA4060 SLA4031 SLA6022 sla*4030 SLA6012 SLA4313 Contextual Info: • Transistor Arrays SLA ÊqutvaType No. VctO to (top) iv i ! 'f hFt- 60 ±10 4 6! 2000 SLA4030 100 4 :6. 2uuu SLA4031 120 4;6 2000 SLA4041 200 36. 1000 SLA4060 120 5 '8 2000 SLA4061 120 5 8 2000 SLA4070 -100 -5 -8. 2000 SLA4071 -100 -5-8, 2000 o 4 6 80	OCR Scan	SLA4010 SLA4030 SLA4031 SLA4041 SLA4060 SLA4061 SLA4070 SLA4071 SLA4310 SLA4313 sla6023 equivalent SLA6022 sla*4030 SLA6012	PDF
HFT150-28 Abstract: ASI10616 Contextual Info: HFT150-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 4L FLG The ASI HFT150-28 is Designed for .112x45° L A FEATURES: Ø.125 NOM. FULL R C • PG = 16 dB min. at 150 W/30 MHz • IMD3 = -28 dBc max. at 150 W PEP • Omnigold Metalization System	Original	HFT150-28 HFT150-28 112x45° ASI10616	PDF

TRANSISTOR HFT Search Results

TRANSISTOR HFT Result Highlights (5)

TRANSISTOR HFT Datasheets Context Search

transistor SD335

Halbleiterbauelemente DDR

221A49

2N6718

transistor bf 198

2SC5752

LG color tv Circuit Diagram schematics

IC HXJ 2038

nec japan 7812

1N6227

ne678m04-a

p1565

nec 14305

BUK627-400A

ES403

2SC5753

QM10

IGBT 1MBH60-100

SLA4061

HFT150-28