TRANSISTOR IC BT 134 Search Results

Contextual Info: N AMER P H I L I P S / D I S CR E T E DhE D m bt,53T31 □015323 7 • RZ1214B125Y r -3 3 - P U L S E D M IC R O W A V E P O W E R T R A N S IS T O R N-P-N silicon microwave power transistor for use in a common-base, class-C wideband amplifier and operating under pulsed conditions in L-band radar applications.

BLV95

Contextual Info: N AMER P H I L I P S / D I S C R E T E LT E D bt>S3^31 □DSTlbM 03fl A BLV95 U.H.F. POWER TRANSISTOR N.P.N silicon planar epitaxial transistor prim arily intended fo r use in m obile radio transm itters for the 9 0 0 M H z com m unication band. Features • m ulti base structure and emitter-ballasting resistors fo r an o ptim um temperature profile

bly89a

Abstract: Transistor bly89a
Contextual Info: N AMER PHILIPS/DISCRETE ObE D 86D 0 1910 • b b S a ^ l Q01414fl 3 D T - i t-u BLY89A JV V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every

Contextual Info: H A 1 6 8 2 1 P /H A 1 6 8 2 1 M P /H A 1 6 8 2 1 F Speech Network IC for Telephone Sets The HA16821 realizes an excellent branching performance by achieving low current dissipation and low voltage operation as speech network IC. it is possible to send DTMF signal or backtone

ph 4148 zener diode

Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Contextual Info: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS

transistor IC BT 136

Abstract: AGC1213 6822F ha16821
Contextual Info: H A 1 6 8 2 1 P / H A 1 6 8 2 1 M P / H A 1 6 8 2 1 F - • * .« " * » * Speech Network IC for Telephone Sets Description HA16821P The HA16821 realizes an excellent branching performance by achieving low current dissipation and low voltage operation as speech network IC. It is possible to send DTM F signal or backtone

Contextual Info: tUN 11 » « DISCRETE SEMICONDUCTORS Philips Semiconductors PHILIPS t.b53T31 0035171 507 P h lllp i Sem iconductor! Product specification UHF power transistor FEATURES • SMD encapsulation • Gold m etallization ensures excellent reliability. BLT80 QUICK REFERENCE DATA

Contextual Info: H A 1 6 8 2 1 P /H A 1 6 8 2 1 M P /H A 1 6 8 2 1 F -pe-nary Speech Network IC fo r Telephone Sets D e s c rip tio n HA16821P The HA16821 realizes an excellent branching performance by achieving low current dissipation and low voltage operation as speech network IC. it is possible to send DTMF signal or backtone

NPN PNP SOT-143

Abstract: BCV63 BCV64 TI3030 700 v power transistor
Contextual Info: DEVELOPMENT DATA bt>53ci31 GDlSbO? 3 [ T h is data sheet contains advance inform ation and BCV63 specifications are subject to change w ith out notice. N AUER PHILIPS/DISCRETE ObE » r - 2 * ? - 0 ,7 SILICON PLANAR TRANSISTOR Double N-P-N transistor in a plastic SOT-143 envelope. Intended for Schmitt-trigger applications.

Contextual Info: SftOPTEK Product Bulletin JA N TX, JA N TX V , 2N5796U Septem ber 1996 Surface Mount Dual PNP Transistor Type JANTX, JANTXV, 2N5796U • • • Ceramic surface mount package Hermetically sealed Miniature package minimizes circuit board area required • Electrical performance similar to dual

Contextual Info: i_L N AUER PHILIPS/BISCRETE DbE D • bbS3T31 QOlSlb? 1 RV2833B5X r - 3 3 - D MICROWAVE POWER POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier, operating in the 2.8 to 3.3 GHz frequency range.

BC868

Abstract: transistor marking HB sot-89 BC868-10 BC868-16 BC868-25 IEC134 L7E transistor T10102
Contextual Info: • bbSB'ìBl DD24MÖ7 Ö21 « A P X N AMER PHILIPS/ DIS CRETE b7E ì> BC868 A_ SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a microminiature plastic envelope intended for low-voltage, high-current l.f. applications. BC868/BC 869 is the matched complementary pair suitable for class-B audio output

Contextual Info: N AMER PHILIPS/DISCRETE b^E » APX bt.53^31 □ □ 5615 0 b5b A Z IN 4 U 3 C PNP POWER TRANSISTOR PNP power transistor, housed in a TO-39 metal envelope. It is intended for use in amplifier and switching applications. QUICK REFERENCE DATA Collector-base voltage open emitter

Contextual Info: N AUER PHILIPS/DISCRETE QbE D tbS3T31 0015015 0 • DEVELOPMENT DATA LVE21050R This data sheet contains advance information and specifications are subject to change without notice. J V T -3 3 -0 7 MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor for use in common-emitter class-A linear power amplifier up to 4,2 GHz.

Contextual Info: Product Specification Philips Semiconductors Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope. The device is intended for use in motor control, DC/DC and AC/DC

Contextual Info: N AMER PHILIPS/DISCRETE b^E J> bt.53^31 002A730 253 APX BFS23A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 28 V. The transistor is resistance stabilized. Every tran­

TRANSISTOR BF495

Abstract: BF495 transistor BF495 BF495C N10Y BF495D transistor TI 310
Contextual Info: _ N AMER PHILIPS/DISCRETE " ~ . DbE D • BF495 htSBTBl 001H30Û G ■ T - 2 1 - I* ? ' SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a plastic TO-92 variant intended for h.f. applications in radio and television r a n r a n ; it is especially recommended for f.m . tuners, i.f. amplifiers in a.m./f.m. receivers where a low transistor

Contextual Info: N AMER PHILIPS/DISCRETE b'lE D • bhS3T31 QD2fllDfl 311 P h ilip s S e m ic o n d u c to rs 2N2894A D a ta sheet statu s Preliminary specification d a te o f issue December 1990 Silicon switching transistor QUICK REFERENCE DATA PARAMETER SYMBOL MIN. CONDITIONS

Contextual Info: • L.bSB'm O O B S ^ B 73R « A P X N ANER PHILIPS/DISCRETE PXT3904 b7E D yv SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a SO T-89 envelope primarily intended for high-speed, saturated switching applications for industrial service. Q U IC K R E F E R E N C E D A T A

lem HA

Abstract: transistor bu2520d BU2520D
Contextual Info: N AMER PHILI PS /D IS CRE TE blE D • LbSBTBl 002fl37b 7SM M A P X Phjljps^Semiconductorg_ Productspe Silicon diffused power transistor BU2520D GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic

Transistor Equivalent list

Abstract: Transistor AND DIODE Equivalent list capacitor feed-through
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very

Contextual Info: N AUER PHILIPS/DISCRETE b'lE D bb53^31 DDE7ba^ 136 • APX BF421 BF423 SILICON EPITAXIAL TRANSISTORS P-N-P transistors in plastic TO-92 envelope primarily intended for class-B video output stages in colour television and professional monitor equipment. N-P-N complements are BF420 and BF422.

HIR26-21C

Abstract: w32 smd transistor w32 smd transistor 143 17-21SYGC/S530-E2/TR8 3A-01-B74-Y9C-A1S1T1DH-AM ELM-1882-UYWB 19-223SURSYGC/S530-A3/E3/TR8 l289 itr8102 w27 smd transistor
Contextual Info: Everlight Electronics was established in 1983 and plays a critical role in the history of Taiwan’s LED industry. It has become the leader in the Taiwan LED packaging industry. Although facing competition from numerous worldwide Optoelectronic suppliers, Everlight

BFQ32

Abstract: for transistor bfr96 MB8347 philips bfq32 BFR96 philips transistor bfr96 BFR96 UBB345
Contextual Info: Philips Semiconductors ^33^31 G031S31 'HS IA P X Product specification PNP 4 GHz wideband transistor £ BFQ32 N AUER PHILIPS/DISCRETE D ESCRIPTION b^E D PINNING P N P transistor in a plastic SOT37 envelope, intended for use in UHF applications such as broadband