TRANSISTOR IR 840 Search Results

foto sensor

Abstract: optical interrupter darlington gabellichtschranke datasheet ic 4060 Fototransistor Q62702-P5263
Contextual Info: Gabellichtschranke mit Fotodarlington Transistor Slotted Interrupter with Photodarlington Transistor SFH 9330 Wesentliche Merkmale • Kompaktes Gehäuse • GaAs-IR-Sendediode • Si-Foto Darlington-Transistor mit Tageslichtsperrfilter • Hoher Koppelfaktor

foto sensor

Abstract: Fototransistor opto counter Opto Interrupter slotted 1/IRF 9330 gabellichtschranke Q62702-P5263 w 9330 opto sensor counter
Contextual Info: Gabellichtschranke mit Fotodarlington Transistor Slotted Interrupter with Photodarlington Transistor SFH 9330 Wesentliche Merkmale • Kompaktes Gehäuse • GaAs-IR-Sendediode • Si-Foto Darlington-Transistor mit Tageslichtsperrfilter • Hoher Koppelfaktor

Contextual Info: PD 9.1571 International IG R Rectifier IR G 4 R C 1 0 U D PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for medium operating frequencies 8-40 kHz in hard switching, >200

MT1115

Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Contextual Info: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir

ITR8307

Contextual Info: Technical Data Sheet OPTO INTERRUPTER ITR ITR8307 Features Fast response time High sensitivity Cut-Off visible wavelength Thin Compact Pb free Descriptions ITR8307 is a light reflection switch which includes a GaAs IR-LED transmitter and a NPN photo-transistor with a high photosensitive

8-Lead TO-99 Package

Contextual Info: F A IR C H IL D S E M IC O N D U C T O R www.fairchildsemi.com tm L M 1 08A/LH21 08A P r e c is io n O p e r a t i o n a l Am plifiers Features Description • • • • • • • • • The LM108A operational amplifiers features low input bias current combined with the advantages of bipolar transistor

Contextual Info: F A IR C H IL D S E M IC O N D U C T O R www.fairchildsemi.com tm L M 1 08A/LH21 08 A P r e c is io n O p e r a t i o n a l Am plifiers Features Description • • • • • • • • • The LM108A operational amplifiers features low input bias current combined with the advantages of bipolar transistor

BUX53

Abstract: transistor c 839 P6021 TRANSISTOR 841
Contextual Info: BUX 53 NPN S ILIC O N T R A N S I S T O R , T R I P L E D I F F U S E D M E S A T R A N S IS T O R N P N S IL IC I U M , M E S A T R I P L E D I F F U S E T E N TA T IV E D A TA N O T IC E P R O V IS O IR E Driver stage fo r high voltage power transistor Etage p ilo te p o u r tran sistor de puissance

PW-240D

Contextual Info: DATA SHEET D-105 KBPW-240D PWM DC MOTOR SPEED CONTROL NEMA-4X / IP-65 For PM and Shunt Motors Rated: 1/50 – 3/4 HP SCR , 1 HP (PWM) @ 115 VAC 1/25 – 11⁄2 HP (SCR), 2 HP (PWM) @ 230 VAC Model KBPW-240D KB Part No. 8401 (Black Case) KB Part No. 8402 (White Case)

Contextual Info: DATA SHEET D-105 KBPW-240D PWM DC MOTOR SPEED CONTROL NEMA-4X / IP-65 For PM and Shunt Motors Rated: 1/50 – 3/4 HP SCR , 1 HP (PWM) @ 115 VAC 1/25 – 11⁄2 HP (SCR), 2 HP (PWM) @ 230 VAC Model KBPW-240D KB Part No. 8401 (Black Case) KB Part No. 8402 (White Case)

VK-211

Abstract: sd1415 thomson microwave transistor thomson rf power transistor
Contextual Info: S G S —THOMSON OMC D | 7^ 237 □DOGOS'l 7 | O ^^3-/3 ~~r\ SOHO STATE MICROWAVE SD1415 THOMSONCSF COMPONENTS CORPORATION Montgomeryville, PA 18936 • {215 855-8400 ■ TWX 510-661-7299 VHF CO M M UNICATIONS TRANSISTOR DESCRIPTION SSS device type SD1415 is a 12.5 volt epitaxial silicon NPN planar

IC 3130

Abstract: 4110 P525 Q62702-P5250 GEOY6976
Contextual Info: Fotodarlington Transistor im Sidelooker-Gehäuse Photodarlington Transistor in Sidelooker-Package SFH 3130 F Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 840 nm bis 1080 nm • Enge Empfangscharakteristik

Contextual Info: Fotodarlington Transistor im Sidelooker-Gehäuse Photodarlington Transistor in Sidelooker-Package SFH 3130 F Vorläufige Daten / Preliminary Data Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 840 nm bis 1080 nm • Enge Empfangscharakteristik

IC 3130

Abstract: Q62702-P5250 of ic 3130 SFH3130F GEO06976 4110 opto
Contextual Info: Fotodarlington Transistor im Sidelooker-Gehäuse Photodarlington Transistor in Sidelooker-Package SFH 3130 F Vorläufige Daten / Preliminary Data Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 840 nm bis 1080 nm • Enge Empfangscharakteristik

Contextual Info: j » mfRFProcfcjcfs ftp products M ic m s e -m * 140 C o m m e rc e Drive m M o m g e n « « ^ ^ , p a 18936 - 10 « Tel: 215 6 3 1-9 840 A a w w sK i ô y Tiwfiw arotyy i c m <f ì A « O U I 4 U Ü -4 RF & MICROWAVE TRANSISTORS 860-900MHZ CLASS C, BASE STATIONS

2N5016

Abstract: transistor 2n5016 att1100 multi-emitter transistor
Contextual Info: s G S—THOMSON Q4C D | 7=12^37 Q0GQ120 b ”J ~ *f ° SOLID STATE MICROWAVE 2N5016 THOMSON-CSF COMPONENTS CORPORATION Montgomeryviìie, P A 18936 • 215 855-8400 » TWX 510-661-7299 1 . VHF-UHF SILICON NPN POWER TRANSISTOR DESCRIPTION: The SSS 2N5016 is a silicon epitaxial NPN planar transistor which

CQM1H-CPU51 DIP SWITCH setting omron

Abstract: CQM1H-CPU21 CQM1-PA216 CQM1-PA203 CQM1-ID212 CQM1-OD212 Omron CQM1H-CPU21 CQM1H-CPU51 DIP SWITCH configuration CQM1-OC222 CQM1-PA206
Contextual Info: Programmable Controller CQM1H The CQM1H’s rack-less modular design lets you customize your control system by adding “inner boards” for advanced functions, as well as specialized I/O and communications modules. CQM1H offers the most flexibility of all PLC systems in its class.

UL26

Contextual Info: mm jmmRF Prnmtc-* m Microsemi »ANWW fiÿ Wiwiiiiiÿx 140 C o m m e rc e D riv e M o n tg o m e ry v ille , PA 18936-10 13 Tel: {2 1 5> 6 3 1-9 840 S D 1 2 2 4 -2 RF & MICROWAVE TRANSISTORS 108.152MHz APPLICATIONS CLASS C TRANSÌSTOR FRE-QUFtNCY 175MH z

HVR-1X 7 diode

Abstract: STR80145 SE135N hvr 1X 3 diode semiconductor STR 20005 sk a 3120c SE110N ux-c2b equivalent transistor CS 9012 PNP STR83159
Contextual Info: Bulletin No O01EC0 JAN.,1998 SEMICONDUCTORS SHORT FORM CATALOG Power ICs Power Transistors PowerMOSFETs Tryristors Diodes Light Emitting Diodes CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility

Contextual Info: INSTALLATION AND OPERATION MANUAL MODEL KBPW-240D KB Part No. 8401 Black Case • Part No. 8402 (White Case) NEMA 4X, IP-65 PWM DC Motor Speed Control For PM and Shunt Wound Motors Rated 7.5 Amps DC, 11.5 Amps AC @ 115/230 VAC ON STOP OL PENTA-DRIVE PWM DC MOTOR SPEED CONTROL

CSG3001-18A04

Abstract: thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04
Contextual Info: REPLACEMENT TABLE FOR THE POWER SEMICONDUCTORS OF SAMI STAR FREQUENCY CONVERTERS The replacement table gives a list of those semiconductors, which can be used in SAMI STAR frequency converters. The types given for each semiconductor are interchangeable. Detail information about the mounting of the power

PHOTO TRANSISTOR 940nm

Abstract: "photo transistor" PHOTO TRANSISTOR ITR9811 ITR9811-B dual infrared transistor 9811-b
Contextual Info: EVERLIGHT ELECTRONICS CO ,LTD. Device Number:DRX-811-078 REV:1.1 Ecn: Page:1of5 MODEL NO:ITR9811-B
DIMENSIONS : 1.UNIT:mm. 2.
GENERAL TOLERANCE ± 0.2mm.
FOR ITR9811-B TEST PART,OUTPUT INTENSITY IS MEASURED INDIRECTLY BY MEASURING THE EMITTER CURRENT.THE PARTS ARE 6mm APART LEAD TO LEAD;SUCH AS FIG.4 .LED TEST CURRENT IS 4.0mA,

TRANSISTOR 077

Abstract: dual infrared transistor photo transistor "photo transistor" dual infrared diode PHOTO TRANSISTOR 940nm ITR9811 ITR9811-C
Contextual Info: EVERLIGHT ELECTRONICS CO ,LTD. Device Number:DRX-811-077 REV:1.1 Ecn: Page:1of5 MODEL NO:ITR9811-C
DIMENSIONS : 1.UNIT:mm. 2.
GENERAL TOLERANCE ± 0.2mm.
FOR ITR9811-C TEST PART,OUTPUT INTENSITY IS MEASURED INDIRECTLY BY MEASURING THE EMITTER CURRENT.THE PARTS ARE 6mm APART LEAD TO LEAD;SUCH AS FIG.4 .LED TEST CURRENT IS 4.0mA,

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