TRANSISTOR ITT 108 Search Results

rf ic e51

Contextual Info: UNCONTROLLED DOCUMENT £ A N D IE i= i 2= i — PART NUMBER OCP-PCT124/A -T R TOP VIEW MARK REV. REV, A B C NOTES: 1. ANODE/CATHDDE 4 E.C.N. E.C.N. E.C.N. E.C.N. c NUMBER AND REVISION COMMENTS #10BRDR. & # 1 0 7 7 6 . #10815. #10894. DATE 6.16.01 1 2.3.01

Bi 3101 A

Abstract: transistor ITT 108 MMBT3904
Contextual Info: MMBT3906 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type, the NPN transistor MMBT3904 is recommended. Pin Configuration 1 = Collector, 2 = Base, 3 = Emitter. Marking code 3N SOT-23 Plastic Package Weight approx. 0.008 g

T02I

Abstract: 0040II
Contextual Info: UNCONTROLLED DOCUMENT REV, A B PART NUMBER REV. 0CP-PCT4116/E-TR B E.C.N. NUMBER AND REVISION COMMENTS E.C.N. #10BRDR. & #10776. E.C.N. #10815. DATE 6.16.01 12.6.01 RECOMMENDED SOLDER PAD LAYOUT TOP VIEW 2 .5 4 E0.1003 <7 PLS, L 1.90 [0 .07 5 ] _ P <2 PLS.)

Contextual Info: KS621K20 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S in g /S D d rH n Q tO fl Transistor Module 200 Amperes/1000 Volts OU TLIN E DRAWING Description: The Powerex Single Darlington Transistor Modules are high power

Contextual Info: WVUEREX KD221K75 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 D U 3 l D d rH n Q tO n Transistor Module 75 Amperes/1000 Volts Description: The Powerex Dual Darlington Transistor M odules are high power devices designed for use

Contextual Info: UNCONTROLLED DOCUMENT REV, PART NUMBER REV. OCP-PCT4116/E-TR c E.C.N. A NUMBER AND REVISION COMMENTS E.C.N. #10BRDR. & DATE #10776. 6.16.01 B E.C.N. #10815. 12.6.01 C E.C.N. #11148. 5,16.07 TOP VIEW RECOMMENDED SOLDER PAD LAYOUT i r L 2.54 [ 0.100] 7 PLS.

2sa1757 transistor

Abstract: A1757 2SA series transistor ITT 108 2sa1757
Contextual Info: 2SA1757 Transistor, PNP Features Dimensions Units : mm • available In TO-220FP (SC-67) package • high speed switching, typically t{ = 0.15 jas at lc = - 3 A • low collector saturation voltage, typically VCE(sat) = -0.2 V at lC/ lB = -3 A/-0.15 A •

Contextual Info: UNCONTROLLED DOCUMENT A N D IE MARK TOP VIEW REV, A B NOTES: 1 cf ib a 1 1.3, ANODE/CATHODE 2 cf Ï3 7 2 2.4. CATHODE/ANODE 3 cf 3= 6 3 4 ci 5 4 2 O CP -PCT 228/A -T R B E.C.N. NUMBER AND REVISION COMMENTS E.C.N, #10BRDR. & #10776. E.C.N. #10815. 6.8. COLLECTOR

Contextual Info: AVANTEK I N C Q 2GE D avantek im n tb AT-00570 ' Up to 4 GHz General Purpose Silicon Bipolar Transistor _ Avantek 70 mil Package Features • • • • • QDGfci4H3 3 16.0 dBm typical Pi dB at 2.0 GHz 11.5 dB typical Gi dB at 2.0 GHz 2.5 dB typical NF0 at 2.0 GHz

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

50D0

Contextual Info: UNCONTROLLED DOCUMENT A N D IE MARK TOP VIEW 1ct 2 cf ï= 5 3 c i ì= 4 Ì K REV, A B C NOTES: 1. ANODE CATHODE NO CONNECT EMITTER COLLECTOR BASE PART NUMBER REV. O C P -P C T B 1 1 6 / E —TR c E.C.N. E.C.N. E.C.N. E.C.N. NUMBER AND REVISION COMMENTS #10BRDR. & #10776.

itt ol 170

Contextual Info: Edition May 15, 1997 6251-437-1PD ITT INTERMETALL 4bflE711 0 0 0 b S 7 b 234 VDP 31xxB PRELIMINARY DATA SHEET Contents Page Section Title 5 6 1. 1.1. Introduction VDP Applications 9 10 10 11 11 11 11 11 11 12 12 13 13 13 14 15 15 15 16 17 17 17 17 18 18 18

Contextual Info: MOTOROLA SC XSTRS/R F 4bE D • b3b72SH MOTOROLA 3 T - 3 3 - 1 3 ■I SEM ICONDUCTOR TECHNICAL DATA 2N6166 T h e R F L in e 100 W A T T S - 150 MHz R F POWER TRANSISTOR NPN SILICON R F POWER TRANSISTOR NPN S IL IC O N designed f o r V H F p o w e r a m p lifie r a p p lic a tio n s in m ilita ry and in ­

BFR91 philips

Contextual Info: bbS3T31 0025175 2S4 M A P X Philips Semiconductors N AMER PHILIPS/DISCRETE NPN 5 GHz wideband transistor Product specification b7E » £ BFR93 DESCRIPTION NPN transistor in a plastic SOT23 envelope primarily intended for use in RF amplifiers and oscillators. The

Triac SC141D

Abstract: Opto triac ot 195 schematic diagram inverter 2000w schematic diagram power inverter 1500w 12v 1200W DC POWER SUPPLY SCHEMATIC scr 106d st4 diac solar tracking street light system schematic diagram of 2000W induction heater 400W sine wave inverter circuit diagram
Contextual Info: OPTOELECTRONIC CIRCUITS LIGHT DETECTING CIRCUITS L ight detecting circuits are those circuits that cause an action based on the level o f light received by the photo detector. OFF RELAY: 12V , Q.3A COIL: 2 0 A , FORM C. CONTACTS OR SOLID-STATE SW ITCHING OF 16A STEADY-STATE 1 BOA COLD

Contextual Info: UNCONTROLLED DOCUMENT REV, PART NUMBER REV. 0 C P - P C T 4 1 1 6 /E - T R B E.C.N. NUMBER AND REVISION COMMENTS A B E.C.N. #10BRDR. & #10776. E.C.N. #10815. DATE 6.16.01 12.6.01 RECOMMENDED SOLDER PAD LAYOUT TOP VIEW 2.54 E0.1003 <7 PLS, L 1.90 [0.075] _ P

transistor JE 1090

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Isolated version of PHP20N06E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies

VPC3200A

Contextual Info: PRELIMINARY DATASHEET DDP 3300 A Single-Chip Display and Deflection Processor Edition June 19,1996 6251-421-1PD ITT INTERMETALL Mbfl2711 OODbüflfl 441 DDP 3300 A PRELIMINARY DATASHEET Contents Page Section Title 4 4 5 6 6 6 6 1. 1.1. 1.2. 1.3. 1.3.1. 1.3.2.

SCR induction furnace circuit diagram

Abstract: schematic diagram power inverter 1500w schematic diagram inverter 2000w 1200W inverter "circuit diagram" sc146d Triac cross reference scr 106d 12v to 220v inverter schematic diagram 2000w 220v DC MOTOR SPEED CONTROLLER using opto coupler 12 volt dc to 220v ac inverter 1500w schematic diagram solar tracker circuits
Contextual Info: OPTOELECTRONIC CIRCUITS LIGHT DETECTING CIRCUITS L ight detecting circuits are those circuits that cause an action based on the level o f light received by the photo detector. OFF RELAY: 12V , 0 .3 A COIL: 2 0 A , FORM C. CONTACTS OR SOLID-STATE SW ITCHING OF 16A STEADY-STATE 150 A COLD

2SK49

Abstract: JA BJT P514 t430 transistor transistor T600 p745 h me 218l p745 Transistor F030 P460
Contextual Info: NEC j m ^ T ix t x J u n c t io n Field E ffe ct T r a n s is t o r A 2SK49 N-Channel Silicon Junction Field Effect Transistor FM Tuner *1- ° i&MM'SLtë.ÿji'P-y V t f í O F M f ^ - B 0 / P A C K A G E DIM ENSIO NS Unit : mm O |yfs| ^ § ^ o I y fs I = 2 . 8 m ü T Y P . ( V d s = 5 . 0 V ,

ac cdi schematic diagram

Abstract: dc cdi schematic diagram cdi schematic cdi circuit diagram California Devices cdi schematics equivalent transistor bc 107 off grid inverter schematics cdi wiring diagram "california devices"
Contextual Info: cl o cot S '/ t ó CALIFORNIA DEVICES INC. /¿vi o^ f DLM SERIES HCMOS Gate Arrays 000935 April 1985 PRODUCT FEATURES DLM SERIES FAMILY ORGANIZATION ^ • High perform anc^ 3 ^ ^ silicon gate HC^MOSJechnology. P art N um ber ■ From 210 to 10,152 equivalent 2-input gates.

5Bp smd transistor data

Abstract: 5Bp smd TRANSISTOR SMD 2X y CK 158 SMD WL18 TRANSISTOR SMD 2X K 100CLCC cmos based on tanner tools operation of sr latch using nor gates TRANSISTOR SMD 2X 7
Contextual Info: Order this data sheet by HDCM IL/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Military HDC Series HDC Series CMOS Arrays High Performance Triple Layer Metal 1.0 Micron CMOS Arrays Built on a 1.0 micron, triple-layer metal CMOS process, the HDC Series represents a

transistor BC-108

Abstract: dog 53 DIODE BZ TRANSISTOR BC 109 VEB Kombinat DIODE BZP DIODE BZp 6870 service-mitteilungen Stern Radio OA625
Contextual Info: SERV IC E-M ITT EILU N G EN VEB IN DUSTRIEVERTRIEB RU ND FU NK UND FE RN SE H EN GSMi ra d io - television AUSGABE: 7/73 DATUM: Juni 1973 Neue Import - Geräte Kassetten-Tonbandgerät " M£ - 25 " Dae Gerät wird aus der VR Ungarn importiert und befindet sich ab

F 3010012

Contextual Info: UNCONTROLLED DOCUMENT A N D IE MARK TOP VIEW REV, A B C NOTES: 1 cf ib a 1 1.3, ANODE/CATHODE 2 cf Ï3 7 2 2.4. CATHODE/ANODE 3 cf 3= 6 3 4 ci 5 4 2 OCP-PCT228 / A - T R c E.C.N. E.C.N, E.C.N. E.C.N. 6.8. COLLECTOR 9.É.8 CO.381] 3,50 [0,138] NUMBER AND REVISION COMMENTS