TRANSISTOR J 201 Search Results

NTE74LS74A

Abstract: NTE7483 NTE74LS76A NTE7475 NTE7472 NTE7473 NTE7474 NTE74C74 NTE74H73 NTE74LS73
Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74H71 14-Lead DIP, See Diag. 247 AND Gated J-K Master/Slave Flip-Flop “ /Preset & Clear Q 14-Lead DIP, See Diag. 247 NTE7472, NTE74H72 AND Gated J-K Master/Slave Flip-Flop “ /Preset & Clear Vcc

NTE7474

Abstract: NTE74LS76A NTE7483 NTE74LS74A NTE74LS83A full adder NTE7476 NTE74LS75 NTE74S74 NTE74LS77
Contextual Info: INTEGRATED CIR CU ITS- TTL TRANSISTOR TRANSISTOR LOGIC NTE74H71 14-Lead DIP, See Diag. 247 AND Gated J-K Master/Slave Flip-Flop “ /Preset & Clear NTE7472, 14-Lead DIP, See Diag. 247 NTE74H72 AND Gated J -K Master/Slave Flip-Flop “ /Preset & Clear Q Vcc

NTE74123

Abstract: NTE74HC123 NTE74121 NTE74HC125 NTE74LS113 NTE74LS114 NTE74LS122 Q204 NTE74120 NTE74LS112A
Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74110 14-Lead DIP, See Diag. 247 AND Gated J -K Master/Slave Flip-Flop "/D ata Lockout NTE74111 16-Lead DIP, See Diag. 249 Dual J -K Flip-Flop Master/Slave "/D ata Lockout 16-Lead DIP, See Diag. 249

Contextual Info: INTEGRATED CIR CU ITS- TTL TRANSISTOR TRANSISTOR LOGIC NTE74H71 14-Lead DIP, See Diag. 247 AND Gated J -K Master/Slave Flip-Flop “ /Preset & Clear NTE7472, 14-Lead DIP, See Diag. 247 NTE74H72 AND Gated J -K Master/Slave Flip-Flop “ /Preset & Clear 0 Vcc

NTE7411

Abstract: NTE74LS123 NTE74LS113 NTE74123 nte74s124 NTE74121 NTE74LS11 TRANSISTOR D 1266 NTE74HC125 NTE74120
Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74110 14-Lead DIP, See Diag. 247 AND Gated J -K Master/Slave Flip-Flop "/D ata Lockout NTE74111 16-Lead DIP, See Diag. 249 Dual J -K Flip-Flop Master/Slave "/D ata Lockout 1K r i 1 CLR § 3 1Q | ¡3

Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74110 14-Lead DIP, See Diag. 247 AND Gated J -K Master/Slave Flip-Flop "/D ata Lockout NTE74111 16-Lead DIP, See Diag. 249 Dual J -K Flip-Flop Master/Slave "/D ata Lockout 1K r i §3 1 PR Q 1 CLR Vc c

TCST2103

Abstract: temic tcst TCST2202 transistor 010C tcst1103 transistor j 201
Contextual Info: Temic Semiconductors Optical Sensors Reflective Optical Sensors with Transistor Output j Package Part Number _|_ | IReflective Optical Sensors CTR @ IF Ic mA % >0.3 > 1.5 1 ««A Characteristics ;V<8SJC8Q @ 1 tnA V V£#jgt @ % «odlc V j mA j mA CNY70 A TCRT1000b>

AN406/0591

Abstract: TEA2019 TEA2018A
Contextual Info: SGS-THOMSON J T E A 2019 CURRENT MODE SWITCHING POWER SUPPLY CONTROL CIRCUIT • DIRECT DRIVE OF THE EXTERNAL SWITCH­ ING TRANSISTOR ' ■ POSITIVE AND NEGATIVE OUTPUT CUR­ RENTS UP TO 0.5A ■ CURRENT LIMITATION ■ TRANSFORMER DEMAGNETIZATION AND POWER TRANSISTOR SATURATION SENS­

MDB Resistor

Abstract: 2N1224 2N1225 transistor equivalent table IRC MMC carbon marking "3AA" 410B
Contextual Info: MIL-S-195QO/189B 18 January 1972 SUPERSEDING \/TTT —C - l O R n n / I Ö QA 1T11U U X * J \ J \ J \ J lU V iTl 26 A pril 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPES 2N1224 AND 2N1225 in is specification is m andatory for use by all D epart­

transistor BFR91

Abstract: BFR91 transistor CR NPN BFR91 philips
Contextual Info: Philips Semiconductors Product specification '- P NPN 5 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE J> PIN 7 711002b PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF amplifiers such as in aerial amplifiers, radar systems,

Contextual Info: • Philips Semiconductors bb53T31 0055155 757 H A P X N AUER PHILIPS/DISCRETE NPN 5 GHz wideband transistor DESCRIPTION Product specification b7E J> c BFR92 PINNING NPN transistor in a plastic SOT23 envelope primarily intended for use In RP wideband amplifiers and

DSA0038067

Contextual Info: SEMICONDUCTOR KTD1530 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER DARLINGTON TRANSISTOR. A N O FEATURES B Q K F ・Complementary to KTB2530. R G H I C J ・Recommended for 80W Audio Amplifier Output Stage. D MAXIMUM RATING Ta=25℃

2N5084

Abstract: 2N5284 FL-35A 2N4115 2N5085 2N4116 2N5002 2N5004 2N5083 2N5285
Contextual Info: llP NPMTO-111 I s o la t e d c n llB n t n . - lt e n n . - r t ' ^ 84aa_^ 2 DIQDE TRANSISTOR CO IN C . l a f l H B 3 S E 0G0Q13S □ I Ö4D 0 0 1 2 8 ^ ——— t D1DDE TRANSISTOR CQ.J(\IC. FA X ^ 201 ^ 6 75 58 83 139-385 * 0u,8lde N V 4 N J area ca|l T O LL F R EE 800-526-4581

2N4211

Abstract: TO63 2N3237 2N3598 2N3599 2N3772 2N3773 2N5631 2N6259 2N6359
Contextual Info: DIODE TRANSISTOR CO INC fl4 DE 1 5640352 00G013Ö 3 ÿ*. J 3 - û DIODE TB<ar\J5J5TQR CO. INC. (201 686-0400 »Telex: 139-385 • Outside NY & N J area call TO LL F R E E 800-526-4581 FAX No. 201-575-5863 Device Type hFE VCEO Max(V) Mln/Max 2N3773 2N5629

2SD2011

Abstract: 3PAA
Contextual Info: Is ~ P s $ /Transistors 's 7, 2SD2011 x t°$ * > 2SD 2011 npn v V =i > h 7 > y * £ Epitaxial Planar NPN Silicon Transistor Darlington Ji>j£fi;ftig|liffl/l-o w Freq. Power Amp. • • 1) 9 — V> >t£$7cT h F E 2) ? > / ' > • - ? ' ( ' * - K F *J *L

GT30F124

Abstract: GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122
Contextual Info: 2010-3 PRODUCT GUIDE Discrete IGBTs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor

NTE74HC393

Abstract: NTE74LS393 NTE74393 NTE74LS386 NTE74HC390 o2-a2 NTE74LS390 NTE74S387 NTE74HC377 Dual D-type flip-flop
Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74376 16-Lead D IP, See Diag. 249 Quadruple J-K Flip-Flop 20-Lead DIP, See Diag. 294 NTE74HC377, NTE74LS377 Octal D-Type Flip-Flop w/Common Enable W/Ck>ck & Single Rail Outputs Enable G u NTE74LS378

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM200HC-M HIGH POWER SWITCHING USE NON-INSULATED TYPE QM200HC-M APPLICATION Robotics, W elders, Forklifts, Golf cart OUTLINE DRAWING & CIRCUIT DIAGRAM Dim ensions in mm BO — f - t j - - W V -4 — •f-AAA'-t- EO —-'j' ex ó

Contextual Info: INTEGRATED CIRCUITS - DTL SERIES DIODE TRANSISTOR LOGIC NTE9093, 14-Lead DIP, See Diag. 247 NTE9094 Dual J -K Flip-Flop (Power Drain = 28/34mA Max) NTE9097, 14-Lead DIP, See Diag. 247 NTE9099 Dual J -K Flip-Flop (Power Drain = 34/28mA Max) NTE9135 Hex Inverter

acrian RF POWER TRANSISTOR

Abstract: Acrian T9 acrian RF POWER TRANSISTOR T9 acrian inc
Contextual Info: 0 1 8 2 9 9 8 ACRI'AN. INC h, Hü Æ& GENERAL T? SPI ÜP D E ;| 0 1 0 2 ^ 0 ^!jjj|jjjgjgg 0DD1403 4 J ^0 |j|ijj|jUp*^ 2003 D E S C R IP T IO N The 2003 is a common base transistor capable of providing 3 Watts of C W RF output power in the 1000-2000 MHz. This hermetically sealed transistor is specifically designed for

GL5672

Contextual Info: 1/2 GL5672 NPN LOW FREQUENCY TRANSISTOR Description The GL5672 is a low frequency transistor . Excellent DC current gain characteristics. Package Dimension REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 10 0.60 0.80 0.25 0.35 REF. B J

Contextual Info: r z j SGs m o M s o N TEA2019 CURRENT MODE SWITCHING POWER SUPPLY CONTROL CIRCUIT DIRECT DRIVE OF THE EXTERNAL SWITCH­ ING TRANSISTOR POSITIVE AND NEGATIVE OUTPUT CUR­ RENTS UP TO 0.5A CURRENT LIMITATION TRANSFORMER DEMAGNETIZATION AND POWER TRANSISTOR SATURATION SENS­

Contextual Info: nu. . 0 . J Philips Semiconductors • ^53=131 0 0 2 ^ 2 3 21b « A P X " n AMER PHILIPS/DISCRETE NPN 7 GHz wideband transistor DESCRIPTION Product specification L7E T> BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband

transistor P1P

Abstract: BFR92 p1p transistor BFT92 Philips MBB BFR90 amplifier J31 transistor BFR90 code p1p
Contextual Info: m P hilips S em iconductors bbS3T31 N AMER DD2S1S2 757 H I A P X PHILIPS/DISCRETE _ . ._. Product specifigatjon b7E J> NPN 5 GHz wideband transistor £ BFR92 PINNING DESCRIPTION NPN transistor in a plastic SOT23 envelope primarily Intended for use in RF wideband amplifiers and