TRANSISTOR JSW 12 Search Results
TRANSISTOR JSW 12 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 |
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TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold |
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TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold |
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TPCP8515 |
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NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 |
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TTC021 |
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NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini |
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TRANSISTOR JSW 12 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: • TqsqgB? ongflbo? q SCS-THOMSON BUR20 Rfflmg^omLioir^oin ! S 6 S-THQMSON 3QE I> HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR ADVANCE DATA HIGH CURRENT HIGH SWITCHING SPEED HIGH POWER GOOD SOA GOOD RBSOA INTERNAL SCHEMATIC DIAGRAM DESCRIPTION The BUR20 is a silicon multiepitaxial planar NPN |
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BUR20 BUR20 300ns, 10MHz | |
transistor JSW
Abstract: jSw Diode
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MG200Q1US51 transistor JSW jSw Diode | |
TRANSFORMER bck 03
Abstract: transistor JSW 07 OP295
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0P-295/0P-495 OP-295 14-Lead TRANSFORMER bck 03 transistor JSW 07 OP295 | |
Contextual Info: TOSHIBA MG15Q6ES50A m r; 1 = ; n f i F ^ n i TOSHIBA GTR MODULE • ■ Mr SILICON N CHANNEL IGBT la r ta «v v m ■ HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance 6 IGBTs Built Into 1 Package. |
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MG15Q6ES50A 961001EAA1 TjS125Â | |
jSw DiodeContextual Info: T O SH IB A MG300Q2YS50 TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q2YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • High Input Impedance High Speed : tf=0.3^s Max. Inductive Load Low Saturation Voltage |
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MG300Q2YS50 961001EAA1 jSw Diode | |
transistor JSW
Abstract: toshiba srf
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MG200Q2YS50 transistor JSW toshiba srf | |
transistor JSW
Abstract: diode JSW FL 576-K125
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6DI30M-050 E82988 l95t/R89 Shl50 transistor JSW diode JSW FL 576-K125 | |
Contextual Info: T O S H IB A MG200Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q2YS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.) |
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MG200Q2YS50 TjS125Â | |
BA4904A
Abstract: AV011 av033 BA3906
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BA3902 BA3904A BA3906 BA3902, BA3904A, BA3906 SIP-M12 BA3902: BA3904A: BA3906: BA4904A AV011 av033 | |
Contextual Info: r r u TECHNOLOGY n m _ 1A High Voltage, Efficiency i o » Switching Voltage Regulator F€flTUR€S DCSCRIPTIOn • Wide Input Voltage Range: 3V to 75V ■ High Switch Voltage: 100V ■ Low Quiescent Current: 4.5mA ■ Internal 1A Switch ■ Shutdown Mode Draws Only 120pA Supply Current |
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120pA T0-220 LT1072 LT1082 LT1082 T0-22Q | |
AN4001
Abstract: laser diode spice model simulation Class E amplifier 300 watt mosfet amplifier class AB MRF transistor PIN diode MACOM SPICE model 27.12MHz power amplifier 27.12Mhz 500 watt mosfet power amplifier circuit diagram 1000 watt mosfet power amplifier
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AN4001 MRF151A 12MHz, AN4001 laser diode spice model simulation Class E amplifier 300 watt mosfet amplifier class AB MRF transistor PIN diode MACOM SPICE model 27.12MHz power amplifier 27.12Mhz 500 watt mosfet power amplifier circuit diagram 1000 watt mosfet power amplifier | |
ic 7485 4 bit comparator
Abstract: 16 bit comparator using 74*85 IC CD40298 Ic 7485 comparator function table CD45858 transistor JSW
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SCHS091 CD4585B 20-Volt CD45858 ic 7485 4 bit comparator 16 bit comparator using 74*85 IC CD40298 Ic 7485 comparator function table transistor JSW | |
HSML-2822
Abstract: varactor diode model in ADS Limiter PIN diode ADS model hsml5822 PIN diode ADS model varactor diode in p-n junction in ads ADS varactor diode hsms2820 limiter zero bias schottky diode 2GHz transistor JSW
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HSMP382x 10Agilent 11Agilent AV02-2139EN HSML-2822 varactor diode model in ADS Limiter PIN diode ADS model hsml5822 PIN diode ADS model varactor diode in p-n junction in ads ADS varactor diode hsms2820 limiter zero bias schottky diode 2GHz transistor JSW | |
tc6105
Abstract: 2SK679 BH rn transistor 10285 TC-6105
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2SK679 2SK679Ã TC-6105 tc6105 2SK679 BH rn transistor 10285 | |
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low noise Microphone Preamplifier
Abstract: SSM2135
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SSM-2135 SSM-2135 SSM2135 low noise Microphone Preamplifier SSM2135 | |
Amplitude Modulation using tractor diode
Abstract: RS1016 PMI PM7528 transistor de audio fp 1016 transistor audio fp 1016 PM-7528 BF253 electret condenser microphone preamplifier professional microphone preamp SSM2135
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SSM2135 SSM-2135 volt75Eâ SSM-2135 2000E 65E-04 Amplitude Modulation using tractor diode RS1016 PMI PM7528 transistor de audio fp 1016 transistor audio fp 1016 PM-7528 BF253 electret condenser microphone preamplifier professional microphone preamp SSM2135 | |
BTS5460SF
Abstract: GPS01089 JESD51-2
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BTS5460SF BTS5460SF GPS01089 JESD51-2 | |
differential electret condenser microphone preamp
Abstract: transistor JSW 12 SSM2135
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SSM2135 SSM-2135 differential electret condenser microphone preamp transistor JSW 12 SSM2135 | |
transistor JSW 12
Abstract: Sonic Drive SSM2135
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SSM2135 SSM-2135 transistor JSW 12 Sonic Drive SSM2135 | |
BTS5480SF
Abstract: GPS01 bts5480 jsw marking GPS01089 JESD51-2 DSA0096557 transistor JSW 12
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BTS5480SF BTS5480SF GPS01 bts5480 jsw marking GPS01089 JESD51-2 DSA0096557 transistor JSW 12 | |
transistor JSWContextual Info: □ ANALOG DEVICES LowNoise, LowDrift Single-Supply Operational Amplifiers OP-113/0P-213/0P-413* FEATURES Single- or Dual-Supply Operation Low Noise: 4.7 n V /V R z @ 1 kHz Wide Bandwidth: 3.4 MHz Low Offset Voltage: 100 jjlV Very Low Drift: 0.2 |xV/°C Unity Gain Stable |
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OP-113/0P-213/0P-413* OP-113 53E16 OP113 transistor JSW | |
Contextual Info: C 2 î ¡992 ANALOG ► DEVICES Low Noise, Low Drift Single-Supply Operational Amplifier OP-213* PIN CONNECTIONS FEATURES Single or Dual Supply Operation Low Noise: 5 n V /V H z @ 1 kHz Wide Bandwidth: 3.4 MHz Low Offset Voltage: 100 jj.V Very Low Drift: 0.2 nV/°C |
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OP-213* P-213 OP-213. 53E16 OP-213 | |
GPS01089
Abstract: DCPWM JESD51-2
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BTS6460SF GPS01089 DCPWM JESD51-2 | |
BTS6480SF
Abstract: PSH5 SPI pwm generator transistor mj 4035 GPS01089 JESD51-2
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BTS6480SF BTS6480SF PSH5 SPI pwm generator transistor mj 4035 GPS01089 JESD51-2 |