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    TRANSISTOR K 1507 Search Results

    TRANSISTOR K 1507 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR K 1507 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR SMD MARKING CODES

    Abstract: BC807 PDTA323TK PDTC323TK SC-59A transistor SMD MARKING CODE MARKING CODE SMD IC
    Text: PDTA323TK PNP 500 mA, 15 V resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open Rev. 01 — 16 June 2005 Product data sheet 1. Product profile 1.1 General description 500 mA PNP Resistor-Equipped Transistors RET in a small SOT346 (SC-59A) SMD plastic package.


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    PDF PDTA323TK OT346 SC-59A) PDTC323TK BC807 TRANSISTOR SMD MARKING CODES PDTA323TK PDTC323TK SC-59A transistor SMD MARKING CODE MARKING CODE SMD IC

    BALLAST MOTOROLA

    Abstract: circuit diagram electronic ballast for 32W tube l ELECTRONIC BALLAST DIAGRAM 1000W fluorescent ballast schematic ELECTRONIC BALLAST dual DIAGRAM ballast circuit diagram 75w bq 80300 transistor Electronic ballast transistor ballast 1000W ELECTRONIC BALLAST transistor DIAGRAM
    Text: ARE402/D THE FI FCTRONIC .%? CONTROL &$;’” Reprinted December MOTOROLA @ Semiconductor Products by permission of ELECTRONIQUE 1988 Issue, 01988 SPS, All Rights DE PUISSANCE, Reserved. THE ELECTRONIC CONTROL OF FLUORESCENT TUBES ,., ‘, . Prepared by:


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    PDF ARE402/D BALLAST MOTOROLA circuit diagram electronic ballast for 32W tube l ELECTRONIC BALLAST DIAGRAM 1000W fluorescent ballast schematic ELECTRONIC BALLAST dual DIAGRAM ballast circuit diagram 75w bq 80300 transistor Electronic ballast transistor ballast 1000W ELECTRONIC BALLAST transistor DIAGRAM

    2SA2223A

    Abstract: A2223A 2SC6145A SANKEN AUDIO High power audio transistor equivalent table transistor 0882 SANKEN Sanken Transistor Mt 200 SANKEN POWER TRANSISTOR CF35
    Text: 2SA2223A Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ ▪ Sanken LAPT transistors have an innovative design, produced by adapting advancements in the unique Sanken thin-wafer production technology. These PNP power transistors achieve


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    PDF 2SA2223A 2SA2223A A2223A 2SC6145A SANKEN AUDIO High power audio transistor equivalent table transistor 0882 SANKEN Sanken Transistor Mt 200 SANKEN POWER TRANSISTOR CF35

    Untitled

    Abstract: No abstract text available
    Text: 2SA2151A Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ By adapting the Sanken unique wafer-thinner technique, these PNP power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown


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    PDF 2SA2151A

    2SA2223

    Abstract: multi emitter transistor transistor 0882 2SA1668A SANKEN AUDIO transistor a2223 2SC6145 SANKEN transistor tip 35c sanken transistor
    Text: 2SA2223 Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ ▪ Sanken LAPT transistors have an innovative design, produced by adapting advancements in the unique Sanken thin-wafer production technology. These PNP power transistors achieve


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    PDF 2SA2223 2SA2223 multi emitter transistor transistor 0882 2SA1668A SANKEN AUDIO transistor a2223 2SC6145 SANKEN transistor tip 35c sanken transistor

    MUN5331DW1T1

    Abstract: LM3661TL-1.25
    Text: MUN5311DW1T1 Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base


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    PDF MUN5311DW1T1 OT-363 MUN5331DW1T1 LM3661TL-1.25

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA -CDISCRETE/OPTOJ » F j T 0 T 7 a S 0 DOlLbfiT 9 0 9 7 2 5 0 TO SH IBA < D IS C R ET E/O P T O t f o À h ì h t SEMICONDUCTOR TOSHIBA FIELD EFFECT TRANSISTOR TECHNICAL DATA SILICON N CHANNEL MOS TYPE 2 S K 5 2 6 7T-M0S) INDUSTRIAL APPLICATIONS


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    PDF 100nA

    transistor BUX 48

    Abstract: transistor BU 2727 transistor bc 207 npn bux48 BUx4 BUX 208 bc 206 transistor W301 transistor BUX BUX code marking
    Text: TELEFUNKEN ELECTRONIC ôHEOD'ib 000=1507 4 m k L G G 17E D BUX 48 • BUX 48 A inflLIMMI ! electronic CrMiiv«'fchno>og*» • Silicon NPN Power Transistors T " 3 3 " /S ' Applications: Switching mode power supply, inverters, motor control and relay driver


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    PDF 15A3DIN E--07 transistor BUX 48 transistor BU 2727 transistor bc 207 npn bux48 BUx4 BUX 208 bc 206 transistor W301 transistor BUX BUX code marking

    LB1408

    Abstract: SANYO LB1408 8 pin diagram of max 485
    Text: Ordering number: EN 1507C M o n o lith ic Digital IC Features 1 An input amplifier is built in. (2) Minimum number of external parts required. (3) Low current dissipation because of series connection of LED's. Absolute Maximum Ratings at Ta=25°C Maximum Supply Voltage


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    PDF 1507C Nal507C LB1408 SANYO LB1408 8 pin diagram of max 485

    hafo

    Abstract: KF-38E KYOCERA 400P Crystal CST ceramic resonators KF-38E LC5872 LC5873 LC5874 LC5876 M 9639 transistor
    Text: Ordering number:EN3956C SAiYO No. 3956C ¡I1 _ C M O S LSI LC5872, LC5873, LC5874, LC5876 4-bit Single-chip Microcontrollers with LCD driver, 12KB/8KB/6KB/4KB ROM, 1Bk RAM on chip Overview Features The LC5872, LC5873, LC5874 and LC5876 are 4-bit


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    PDF EN3956C 3956C LC5872, LC5873, LC5874, LC5876 12KB/8KB/6KB/4KB LC5874 hafo KF-38E KYOCERA 400P Crystal CST ceramic resonators KF-38E LC5872 LC5873 LC5876 M 9639 transistor

    SE012

    Abstract: MC 31136 transistor wih code L0A capacitor seramic LO2 W AW counter KF-38E KYOCERA saa 1030 2068N transistor KD 503 LC5876
    Text: Ordering num ber:EN 3956C C M O S LSI No. 3956C LC5872, LC5873, LC5874, LC5876 SANYO i 4-bit Single-chip Microcontrollers with LCD driver, 12KB/8KB/6KB/4KB ROM, 1Bk RAM on chip X. / // Overview X -j-.r Features The LC5872, LC5873, LC5874 and LC5876 are 4-bit


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    PDF EN3956C 3956C LC5872, LC5873, LC5874, LC5876 12KB/8KB/6KB/4KB LC5874 SE012 MC 31136 transistor wih code L0A capacitor seramic LO2 W AW counter KF-38E KYOCERA saa 1030 2068N transistor KD 503 LC5876

    BU1507AX

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1507AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors.


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    PDF BU1507AX 1507AX 100Pc/rD2S BU1507AX

    bd7995

    Abstract: P8243 178M15 transistor b492 TRANSISTOR BJ 131-6 P8035 sk 7443 1334 diode LM1456 LM 8361
    Text: H F To X 8366IT U N E B Issue 2/8534 STR910A B26000 2000 General Wiring Diagram Figure 10.1 +28 V sense) GROUND Meter Batt. sense + Sense Isolated Ground Batt. GND O FF 28 V O FF (T X O F F ) Relays K4, K1 & K2 BATT. MODE »DC» Relays K5, K6 +8 V in GROUND


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    PDF 8366IT STR910A B26000 B26050 B2G010 B26010 B2701D 9SM102/V4T7 bd7995 P8243 178M15 transistor b492 TRANSISTOR BJ 131-6 P8035 sk 7443 1334 diode LM1456 LM 8361

    K 2645 transistor

    Abstract: K 2642 transistor transistor d 2645 TRANSISTOR K 2645 transistor TRANSISTOR BC 415 transistor BU 102 TRANSISTOR P 01 K 2645 transistor BF 606 BF 145 transistor TRANSISTOR K 2645
    Text: L I - -• TELEFUNKEN ELECTRONIC 17E D ■ fiSSOQ^b 0001503 5 ■ AL6G BU 903 milFiyiMKlM electronic CrttMtTtchnoiog* r - 33-13 Silicon NPN Power Transistor Application: Switching mode power supply features: • Short switching time • Power dissipation 125 W


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    PDF 0QEH503 IAL66 T-33-13 DIN41 T0126 15A3DIN K 2645 transistor K 2642 transistor transistor d 2645 TRANSISTOR K 2645 transistor TRANSISTOR BC 415 transistor BU 102 TRANSISTOR P 01 K 2645 transistor BF 606 BF 145 transistor TRANSISTOR K 2645

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1507DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a piastic full-pack envelope intended for use in horizontal deflection circuits of colour television


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    PDF BU1507DX 1507DX 100Po/PD25c

    TFK 404

    Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
    Text: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317


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    PDF 20nttc* 10N12* TFK 404 T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09

    3N74

    Abstract: TRANSISTOR MARKING A53 3N75 transistor 3N74 Z933 3N7A-76 3N127 3N76 3N75 JAN 3K76
    Text: MIL-S-19500/390 USAF 22 January 1968 WTT TTA D V CDIfrTt'Tf'iTTnW SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, DOUBLE-EMITTER TYPES 3N74, TX3N7A, 3N75, TX3N75, 3N76, TX3N76, 3N127, TX3N127 1. SCOPE •*-•1 Scope. This specification covers the detail requirements for a doubleemitter, NPNj silicon tetrode transistor designed primarily for low-power chopper


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    PDF MIL-S-19500/390 TX3N75, TX3N76, 3N127, TX3N127 3N74-76 3N127 3N127 3N74 TRANSISTOR MARKING A53 3N75 transistor 3N74 Z933 3N7A-76 3N76 3N75 JAN 3K76

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    Untitled

    Abstract: No abstract text available
    Text: LT1083/LT1084/LT1085 7.5A, 5A, 3A Low Dropout Positive Adjustable Regulator Semiconductor [description i T he LT1083 series of positive adjustable regulators regulator and power source are designed to provide 7.5A, 5A and 3A with conditions. The LT1083/LT1084/LT1085


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    PDF LT1083/LT1084/LT1085 LT1083 LT1083/LT1084/LT1085 ADJTA03 ADJTA04 ADJTA05 QQQ1227 1083/LT1084/LT1085 ADJTA07 LT1063

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP183R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! BFP 183R RHs


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    PDF BFP183R Q62702-F1594 OT-143R 76VBE 900MHz a535fc

    transistor 152 M

    Abstract: ac121 TRANSISTOR K 1507 siemens ac121 transistor 3403V AC121 germanium transistor transistor ac 127 transistor ac 152 ac127 Transistor 1507
    Text: BSC D • 0235bG 5 0 Q 0 4 D 2 el 3 W Ê S IE 6 ’ / T ^ ? - / / PNP Germanium Transistors - S IE M E N S — A K T I E N 6 E S E L L S C H A F - A— 1 - 2 for AF, driver and output stages of medium performance


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    PDF 0235bG AC121, AC152 transistor 152 M ac121 TRANSISTOR K 1507 siemens ac121 transistor 3403V AC121 germanium transistor transistor ac 127 transistor ac 152 ac127 Transistor 1507

    Germanium drift transistor

    Abstract: 2N4895 germanium transistor epitaxial mesa transistor sec tip31A halbleiter index transistor transistor BD222 BD699 EQUIVALENT kd 2060 transistor
    Text: POWER DATA BOOK FAIRCHILD 464 Ellis Street, Mountain View, California 94042 1976 Fairchild Camera and Instrum ent C orporation/464 Ellis Street, M ountain View, California 940 4 2 / 4 15 9 6 2 -5 0 1 1/TW X 910 -3 7 9-6 4 3 5 INTRODUCTION You, the customer, and your needs have dictated the form at and contents of


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    PDF orporation/464 CH-8105 Germanium drift transistor 2N4895 germanium transistor epitaxial mesa transistor sec tip31A halbleiter index transistor transistor BD222 BD699 EQUIVALENT kd 2060 transistor

    transistor ac 152

    Abstract: AC1* germanium transistor transistor ac 127 AC121 transistor 152 M xl 1507 germanium transistor ac 125 OC 76 germanium transistor AC152 Q60103-F121
    Text: ESC ]> • 023SbGS 000402^ 3 H S I E 6 ./ PNP Germanium Transistors A C 121 _ SIEMENS AKTIEN6ESELLSCHAF -— — fo r AF, driver and output stages o f m edium perform ance A C 121 and AC 152 are alloyed germanium PNP transistors in 1 A 3 DIN 41871 metal case


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    PDF 235b05 Q60103-D121 152IV Q60103-X152-D Q60103-E121 Q6010E AC162 fl535b05 0Q0M03M T-29-tl transistor ac 152 AC1* germanium transistor transistor ac 127 AC121 transistor 152 M xl 1507 germanium transistor ac 125 OC 76 germanium transistor AC152 Q60103-F121

    MPS 4355 transistor

    Abstract: mps 1132 MPS 3019 K 3053 TRANSISTOR TO-237 MICRO 3020 transistor
    Text: 6091788 MICRO ELECTRONICS CORP ~~ä5 _ * 82D 00661 DE |bGT17fifl GGGDbbl 2 | Medium Power Am plifiers and Switches X P O L A R IT Y M AXIM UM R A T IN G S CASE PN PN PN PN PN 3568 3569 3638 3638A 3641 N N P P N TO-92A TO-92A TO-92A TO-92A TO-92A 625 625 625


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    PDF bGT17fifl O-92A MPS 4355 transistor mps 1132 MPS 3019 K 3053 TRANSISTOR TO-237 MICRO 3020 transistor