TRANSISTOR K 314 Search Results

6R160C6

Abstract: IPB60R160C6 IPA60R160C6 transistor 600v IPP60R160C6 IPW60R160C6 JESD22 6R160
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R160C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R160C6, IPB60R160C6

smd transistor 8c

Abstract: Diode SMD SJ 8C 6R160C6 transistor SMD 2h TRANSISTOR SMD MARKING CODE m3 IPA60R160C6 IPB60R160C6 IPP60R160C6 IPW60R160C6 JESD22
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R160C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R160C6, IPB60R160C6

smd transistor 8c

Abstract: 6R160C6 SMD TRANSISTOR MARKING 2h marking code ll SMD Transistor Diode SMD SJ 8C IPA60R160C6 IPB60R160C6 IPP60R160C6 IPW60R160C6 JESD22
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R160C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R160C6, IPB60R160C6

Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R160C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R160C6, IPB60R160C6

smd transistor 8c

Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R160C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R160C6, IPB60R160C6

VTO-8090

Contextual Info: Wtiili HEWLETT mL'HM PA C K A R D Avantek Products Varactor-Tuned Oscillators Technical Data VTO-8000 Series Features Description Pin Configuration • 300 MHz to 10.5 GHz Coverage IIP VTG-8000 Scries oscillators use a silicon transistor chip as a negative

RF POWER TRANSISTOR 100MHz

Abstract: BOX69477 high Power Amplifier 100mhz BF31
Contextual Info: BF 314 NPN HI GH frequency / SILICON « s » g s E K 5gsnäg»"-js 55 3 » SSS? j E s «rife«. ï PLANAR EPITAXIAL t r a n s is to r ?p SS5: •*«%« & *gx MECHANICAL OUTLINE DESCRIPTION ; GGENERAL ì The BF314 is a NENf silicon plana: epitaxial transistor designed for use

Contextual Info: D2 PA K BUK9635-100A N-channel TrenchMOS logic level FET Rev. 2 — 9 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

BUK9535

Abstract: BUK9635-100A
Contextual Info: D2 PA K BUK9635-100A N-channel TrenchMOS logic level FET Rev. 2 — 9 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

Contextual Info: D2 PA K BUK9635-100A N-channel TrenchMOS logic level FET Rev. 2 — 9 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

2SK315

Contextual Info: Ordering number : EN1005B _ 2 S K 5 1 5 -Channel Junction Silicon Field-Effect Transistor FM T u n e r A p p l i c a t i o n s Features * Ideal for FM tuners in radios, stereos, etc. . Because it is compactly packaged, sets can be made compact,

transistor rf type M 2530

Abstract: signal path designer INA02170
Contextual Info: f T J I H EW LETT 1WM P A C K A R D INA Series RFIC Amplifiers Application Note S012 Introduction The INA series amplifiers are part of Hewlett-Packard’s product line of silicon bipolar RF Integrated Circuits built with HP’s ISOlated Self Aligned Transistor ISOSAT process.

FMG1

Contextual Info: h -7 > V ^ /T r a n s is t o r s ROHM CO LTD • ■ w l^ l ■ MOE D ^ FMG1 TflEflSTT QOOfc.314 7 ■ RHM B /^/In verter Driver Epitaxial Planar Dual Mini-Mold NPN Silicon Transistor • • # J f2 T j- ^ @ /D in w n s io n s { U n it:r n m 1) K /f-y - i r - v t '

6842 motorola

Abstract: MPQ6842 MMPQ6842
Contextual Info: MOTOROLA Order this document by MMPQ6842/D SEMICONDUCTOR TECHNICAL DATA Quad MPU Clock Buffer Transistor NPN/PNP Silicon MMPQ6842 3 EU V I 1 [I 1 E 3 E 1 u v ^ E 3 Cz 1 E H k Voltage and current are negative for PNP transistors CASE 751B-05, STYLE 4 SO-16

Contextual Info: 1 7c1gcia37 0045Û14 Sbfl •SGTH _ *57 S C S -T H O M S O N IL C K g ra *! S T E 4 5 N 50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE S TE45N 50 V dss 500 V RDS on Id < 0.11 n 45 A ■ HIGH CURRENT POWER MODULE

hfa3102-matched

Contextual Info: High Frequency AGC Has Digital Control S em iconductor I A p p li c a t i o n N o te J u n e 1998 AN 9816 Introduction G = K V . n |V B3| e q - 1 The gain-control and bias-stability parameters of the circuit depend on the transistor matching, so the circuit uses a

TCA 700 v

Abstract: TCA 700 TCA 160 TCA 150 t 6 pin TRANSISTOR SMD CODE PA A 671 transistor TR 671 TOP 2 TCA971 Tca671 671 transistor
Contextual Info: 47E D m ÖEBSbQS 003MÖ70 b « S I E G SI EM EN S A K T I E N G E S E L L S C H A F Transistor Array with 5 NPN Transistors TCA 671 TCA 871 TCA 971 TCA 991 Features Bipolar IC • • • • • Versatile use Slight l/BE and B deviations High output current

Contextual Info: SOT23 NPN SILICON PLANAR M ED IU M POWER DARLINGTON TRANSISTOR FMMT614 ISSU E 2 - FEBRUARY 1996_ FEATU RES * hFE up to 5k at lc= 500m A * Fast switching * L o w V CElsa« a t H '9 h l c P A R T M A R K IN G D E T A IL S - 6 1 4 ABSOLUTE MAXIMUM RATINGS.

Contextual Info: SOT23 PNP SILICON PLANAR FMMT593 HIGH VOLTAGE TRANSISTOR ISSUE 3 - NOVEMBER 1995_ O C O M P L E M E N T A R Y TY PE F M M T 4 9 3 P A R T M A R K IN G DETA IL - 593 ABSOLUTE M A X IM U M RATINGS. PARAM ETER SYM BO L Collector-Base Voltage Collector-Emitter Voltage

T3HS

Contextual Info: SANYO SEMICONDUCTOR 22E CORP im Q lh D OOOLTSl T-3HS 2SC3142 N PN Epitaxial Planar Silicon Transistor 2018A High-Frequency General-Purpose Amp Applications 1066A Features . FBET s e r i e s . . C o m p a c t p a c k a g e e n a b l i n g c o m p a c tn e s s o f s e t s .

CA314E

Abstract: CA3146E RCA CA3183E CA-3018 ca3118 CA3118AT CA3146AE 3183a CA3146E two transistor forward
Contextual Info: G E SOLID STATE Dl D E I 3fl75Clfll G014b3fc> 1 | Arrays CA3118, CA3146, CA3183 “T * H 3 * Z S High-Voltage Transistor Arrays Features • Matched general-purpose transistors ■ V g £ matched + 5m V max. ■ Operation from DC to 120 MHz CA 3118AT, T ; CA 3146A E, E

transistor BC 306A

Contextual Info: CMOS LSI No. 5485 LC665304A, 665306A, 665308A, 665312A, 665316A Four-Bit Single-Chip Microcontrollers with 4, 6, 8, 12, and 16 KB of On-Chip ROM Preliminary 3149-DIP48S 0.25 [LC665304A/665306A/665308A/665312A/665316A] 25 1 24 0.48 1.05 2.53 1.78 5.1max 3.8

LC66E2516

Abstract: transistor BC 306A TI0H LC665304A LC665306A LC665308A LC665312A LC665316A LC66599 LC66E5316
Contextual Info: CMOS LSI No. 5485 LC665304A, 665306A, 665308A, 665312A, 665316A Four-Bit Single-Chip Microcontrollers with 4, 6, 8, 12, and 16 KB of On-Chip ROM Preliminary 3149-DIP48S 0.25 [LC665304A/665306A/665308A/665312A/665316A] 25 1 24 0.48 1.05 2.53 1.78 5.1max 3.8

Contextual Info: ¡2 h a r r C A 3140A CA3140 i s BiMOS Operational Amplifiers with MOSFET Input/Bipolar Output August 1 9 9 1 Features D escription • MOSFET Input Stage The CA3140A and CA3140 are integrated-circuit operational amplifiers that combine the advantages of highvoltage PMOS transistors with high-voltage bipolar