TRANSISTOR K 316 Search Results

transistor 335

Abstract: transistor IR TRANSISTOR ir receiver transistor 330 transistor NJL5171K INFRARED REMOTE CONTROL njl51
Contextual Info: OPTOELECTRONICS SEMICONDUCTOR ELEMENTS D [Photo R eflector] — Super Mini Type Transistor Output- [— N JL516 1 K /6 3 K /6 5 K /6 7 K . 2-10 NJ L 5 1 9 1 K /9 3 K /9 5 K . 2-63 Super Mini Type Transistor Output_

transistor NEC D 822 P

Abstract: transistor number D 2498 702 mini transistor 2SC4226-T1 NEC D 822 P 2sc4226 2SC4226-T2
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD D E S C R IP T IO N The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PA C K A G E D IM E N S IO N S in millimeters

FZH 161

Abstract: FZH 111 FZH 181 transistor I 17-13 0773 CBC 184 transistor FZH 175 S3230 FZH 165 FZH 165 b fzh 171
Contextual Info: What HEWLETT wHHM P A C K A R D 4.8 V NPN Common Em itter Medium Power Output Transistor Technical Data AT-31625 Features • 4.8 Volt Operation • +28.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package Outline 25 • 70% C ollector Efficiency

2SK1642

Abstract: QD23 til320 DC DC converter 1A 400V TO 220 Package
Contextual Info: TOSHIBA ‘i O ' ^ S G TOSHIBA FIELD EFFECT TRANSISTOR 002332^ 2SK1642 4^0 SILICON N CHANNEL MOS TYPE tt-M O SII 2 S K 1 642 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS U nit in mm

2N6111

Abstract: 2N6288
Contextual Info: 2N6288 NPN PLASTIC POWER TRANSISTOR Complementary 2N6111 General Purpose Amplifier and Switching Applications DIM A B C E F G H J K L M N MIN 14.42 9,63 3.56 MAX 16.51 10.67 4.83 0.90 1.15 1,40 3.75 3.88 2.29 2.79 2,54 3.43 0,56 12.70 14,73 6,35 2.03 2,92

MP1620

Abstract: transistors MP1620 Mp1620 equivalent mp1620 transistor transistor mp1620 sanken power transistor mp1620 sanken power transistor IC MP1620 1F 10pin sanken lot number
Contextual Info: nnKpn M nàtfcJÜ # £ s a n k e n e l e c t r ic c o m p a n y , l t d . SPE C IFIC A TIO N S DEVICE TYPE NAME m m i M P I620 SANKEN MOLD TYPE SILICON POWER TRANSISTOR MPI 620 l. m m m m Scope C \7 {2> JSTOiilLSS S' y a M P1620 Ko 50 The present specifications shall apply to Sanken silicon power transistor type MP1620.

Contextual Info: KSR1002 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ias R e s is to r B u ilt In • Switching circuit, Inverter, Interface circuit Driver circuit • Built in bias R e sisto r(R ^IO K ft, R2=10K ii) • Complement to KSR2002 ABSOLUTE MAXIMUM RATINGS (Ta= 25°C)

4311 mosfet transistor

Abstract: 2SK2068 2sc 1027 transistor 4-071 transistor 2SK2067 S2VC 4102 transistor s2ld s4vb bridge rectifier 4072
Contextual Info: O rd erin g and P a c k in g In fo rm a tio n Explanation of Packing Lists 1. Parts No. Example: 1 Tape & Reel Surface Mount Devices D 1N□ Maximum Reverse Voltage Example: 2 2. 3. 2SC3164 Transistor or MOSFET ^ Besides SC, there are SA, SB, SD and SK devices.

MGF4316F

Abstract: MGF4319F MGF4310 MGF4319 251C M5M27C102P
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4310F Series S U P E R LOW NOISE InGaAs HEMT D ESC R IP T IO N O U TLIN E DRAWING The MGF4310F series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: 2N6288 NPN PLASTIC POWER TRANSISTOR Complementary 2N6111 General Purpose Amplifier and Switching Applications DIM A B W C D E Uj F G H J K L ° - lo i. Ml u M N MIN 14.42 9,63 3,56 MAX 16.51 10.67 4.83 0.90 1,15 1.40 3,75 3,88 2.29 2.79 2,54 3.43 _ 0,56 12,70 14,73

Contextual Info: t • S Ss— NEC h MOS M O S Field Effect P o w e r Transistor 2SK1123 1 — MOS FET N T .m m 2SK1123 ü , N tj iz i ^ MOS F E T T", 5 V i T ^ IC <Dtfi W M m w w n n t t m ì È . K j ~y^-> y ^ T t o y fy m Z fr'fS<, K, A mm; X ^ 3 .2 ± 0.2 < y ^> 7 W ÌÌ> ià tlT ^ 'Ò f2 tÒ ,

Contextual Info: 1 7c1gcia37 0045Û14 Sbfl •SGTH _ *57 S C S -T H O M S O N IL C K g ra *! S T E 4 5 N 50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE S TE45N 50 V dss 500 V RDS on Id < 0.11 n 45 A ■ HIGH CURRENT POWER MODULE

Contextual Info: b^E N AMER P H I L I P S / D I S C R E T E D • b b S B 'm □D3Db2D Product Specification Philips Semiconductors B U K 4 5 4 -4 0 0 B P o w e rM O S tra n s is to r GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope.

Contextual Info: TOSHIBA {DI SC RE TE/ OPTO } TT DE § TDT75SD 001b7SÜ TOS H I B A FIELD E FFECT TRANSISTOR TOSHIBA TO SHIBA 2 S K 7 8 9 SILICON N C H A N N E L MOS TYPE , TT - M ° s H TECHNICAL DATA D I S C R E T E / O P T O ) 99D 16750 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

Contextual Info: Ordering number : ENN5805 Monolithic Digital 1C LB1817W Is a è I y o I i FDD Spindle Motor Driver Overview Package Dimensions The LB 1817W is a spindle motor driver for low-profile unit: nun floppy disk drives. 3163A-SQFP48 [LB1817W1 Functions and Features

BD 149 transistor

Abstract: bd 317 BD315 bd318 transistor D317 BD317
Contextual Info: MOTOROLA SC XSTRS/R F 15E D | fc.3b?2S4 0004735 1 | 3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA SILICON HIGH-POWER TRANSISTORS 16 AMPERES SILICON POWER TRANSISTORS . . . d e sig n ed for hig h qu ality am p lifie rs operating up to 100 W atts into 4.0 o h m s load w ith BD315, BD 316 an d into 8.0 o h m s lo ad w ith

Contextual Info: BSP 316 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level •'/GS th = -°-8 - - 2-0 V Type ^DS BSP 316 -100 V Type BSP 316 Ordering Code Q67000-S92 -0.65 A ^DS(on) Package Marking 2.2 Q SOT-223 BSP 316 Tape and Reel Information

transistor 2SB 1567

Abstract: 2sd 316
Contextual Info: 2S B 1 5 8 0 / 2 S B 1 316 / 2 S B 1 5 6 7 / 2 S B 1 287 Transistors 2 S D 2 1 95 / 2S D 1 9 8 0 / 2 S D 1 8 6 7 / 2S D 2 3 9 8 / 2 S D 1 765 Power Transistor —100V, — 2A 2SB1580 / 2SB1316 / 2SB1567 / 2SB1287 1) 2) 3) 4) •A b s o lu te maximum ratings (Ta=25"C)

Contextual Info: BSP 316 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS th = -0.8.-2.0 V Pin 1 G Pin 2 Pin 3 D Type VDS ID RDS(on) Package Marking BSP 316 -100 V -0.65 A 2.2 Ω SOT-223 BSP 316 Type BSP 316 Ordering Code Q67000-S92

1316c

Abstract: nec uPC 1316c PC1316C c1316c mpc1316c uPC1316C 36CW transistor P1 P nec 1316c nec+1316c
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT / / P C I 316 C DUAL AUDIO POWER AMPLIFIER D E SC R IPTIO N The ¿ PC1316C is a dual audio pow er a m p lifie r in a 14-lead dual in line plastic package, and designed fo r portable audio sets. F E A TU R E S Wide operating voltage range. V c c = 3 t o 1 6 V

transistor k 316

Abstract: E6327 Q67000-S92
Contextual Info: BSP 316 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS th = -0.8.-2.0 V Pin 1 G Pin 2 D Pin 3 Pin 4 S Type VDS ID RDS(on) Package Marking BSP 316 -100 V -0.65 A 2.2 Ω SOT-223 BSP 316 Type BSP 316 Ordering Code

E6327

Abstract: Q67000-S92
Contextual Info: BSP 316 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS th = -0.8.-2.0 V Pin 1 G Pin 2 Pin 3 D Type VDS ID RDS(on) Package Marking BSP 316 -100 V -0.65 A 2.2 Ω SOT-223 BSP 316 Type BSP 316 Ordering Code Q67000-S92

transistor k 316

Abstract: Diode T 316
Contextual Info: SIEMENS BSP 316 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = -0.8.-2.0 V Type ^b s b ^DS(on) Package Marking BSP 316 -100 V -0.65 A 2.2 n SOT-223 BSP 316 Type BSP 316 Ordering Code Q67000-S92 Tape and Reel Information

Contextual Info: Multi-Loop PID Temperature/Process Controllers CN3390 Series MADE IN USA ACCEPTS 10 INPUTS! 2 # # 4 # 3 6 8 10 # # # # 1 # 5 # 7 # 9 OMEGA SM CARE Extended Warranty Program Probes sold separately. KQSS-316G-12, $25 each See Section A CN3390 Series ߜ 10 PID Control Loops with Auto-Tuning