TRANSISTOR K 790 Search Results

transistor B 764

Abstract: transistor b 745 sot26 sot363 transistor 752 transistor transistor 778 D 756 transistor transistor 746 d 772 transistor
Contextual Info: Packaging Details Page D2P A K . DPAK - Rectifier. DPAK - Transistor.

6r385P

Abstract: IPL60R385CP JESD22 EL series small size SMD transistor infineon msl
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R385CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R385CP Description

Contextual Info: h 7 'y V . • UMG1N/FMG1A $ /Transistors M n M h7 > y^ ^/D ual Mini-Mold Transistor FMG1A Epitaxial Planar NPN Silicon Transistor -f ^ K v'T /’t/inverter Driver • • £wf£‘T S 0 /D im e n s io n s Unit : mm) 1) K A -.y ^ -v T ' 2 f@<D x v 2 J U h ^ > V X $ £ F*3

Contextual Info: DATA SHEET NEC ncr » M 0 S FIELD EFFECT TRANSISTOR BUECTRON DEVICE 2 S K 1 582 N-CHANNEL MOS FET FOR SWITCHING The 2S K 1582, N-channe! vertical type MOS FET, is a switching P A C K A G E D IM E N S IO N S Unit : mm device which can be driven directly by the output of fCs having a 5 V

TC-7986A

Abstract: 2SK2112 CMS01 7986A diode lt 0236
Contextual Info: zr — *5? N E h ^ > v ^ 3* MOS Field Effect Transistor r j C • :> — h 2 S K 2 1 1 2 MOS FET 2 S K 2 1 1 2 IÎN 3 1 + * ; H Ë M O S F E J T & U , * C ct 5 ¡ t g E K ^ g l * * -f -y T 't o * < - y * > 7 ìS j£ f c jÌt 'f c « > , C D r ^ ^ iX - ^ llE S i ^ ,

TC-7606

Abstract: 2SK1283
Contextual Info: M O S Field Effect Pow er Transistor 2SK1283 7 /< 2SK 1283 fi, F E T T , N > 5 V m i l 1? ; * I C X 4 7 f > FET K f f p '- 'V — M O S K x 6 X T to i& ir y f& ÏA T , y i / / 0 ft -M O S ', x ^ y f -> y m t b t z ls b , i - > y°ff m ï\n z- g kïà T to

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3224 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION T his p ro d u ct is N -C hannel M O S Field E ffe ct T ra n sisto r PA R T N U M B E R PACKAGE 2S K 3 2 2 4 TO-251 2 S K 3 2 2 4 -Z

VTO-8090

Contextual Info: Wtiili HEWLETT mL'HM PA C K A R D Avantek Products Varactor-Tuned Oscillators Technical Data VTO-8000 Series Features Description Pin Configuration • 300 MHz to 10.5 GHz Coverage IIP VTG-8000 Scries oscillators use a silicon transistor chip as a negative

transistor f420

Abstract: transistor BJ 115 F420 transistor t514 TRANSISTOR ZT 5551 2SK67A transistor bt 667 TCA561 2S30 T010
Contextual Info: NEC j m^Tiytn A Junction Field Effect Transistor 2SK67A E C M 4 > tf- ? > X N-Channel Silicon Ju n ctio n Field Effect Transistor ECM Im pedance C onverter W-mm/ P A C K A G E D IM E N S IO N S o M 'm m t T t o Unit : mm t ItMMTto OECM-i > o Y - h 2 .9 ± 0.2

T460

Abstract: t460 transistor C947 ic 4541 c947 transistor transistor 9619 M 9619 JT MARKING 2SB800 2SD1001
Contextual Info: '> ' = ! > h =7 > Ì > ~ X 9 Silicon Transistor 2SD1001 N o -t — T 'i O ^ N x f ^ + - > 7 ; H K '> U h = 7 > i> 'X ^ K 7 -i 2SB 800 o P i mm) t ? >7° ' ) / > 9 >J T " f € ^ T " ë t t 0 Î B * , ifijIÎE, r^jhFE'C"t’o 1.5 ± 0.1 P T = 2 .0 W (0 .7 mm X 16 cm2- t e ^ -y

Contextual Info: SIEMENS BUZ 215 SIPMOS Power Transistor • N channel • Enhancement mode • FREDFET Type BUZ 215 VDS 500 V k 5A ^DS on) 1.5 a Package Ordering Code TO-220 AB C67078-A1400-A2 Maximum Ratings Parameter Symbol Drain source voltage Vds Drain-gate voltage

2SK1796

Abstract: MEI-1202 TEA-1035
Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR À 2SK1796 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2S K 1796 is N -channel M O S Field Effect Tran sisto r PACKAGE DIMENSIONS in m illim eters designed fo r high voltage switching applications.

LT 5251

Abstract: 2s87 a1t transistor TRANSISTOR A1t Y500200 t430 transistor transistor bc 541 5251 F ic T440 2SB564
Contextual Info: SEC j Silicon Transistor 2SB564 P N P X t" 2 * -> 7 J U fi '> 'J □ > h =y > v 7- H PNP Silicon Epitaxial Transistor Audio Frequency Power Amplifier o { S M M n i± f m y ^ B / P A C K A G E D IM EN SIO N S * Unit : mm ¿ 7 - fc.y v t , 0 2 S D 4 7 1 1 ^ > 7 °') * >

2SC2331

Abstract: SIRBA TC5344A if4g 2SA1008 PBT GF 20 PBT GF 10 fr 2SC2331 Y
Contextual Info: T -5 > • S / - h s < r> — Silicon Power Transistor 2SC2331 N R N x t ^ + '> 7 ; H * > 'J U > h =7 I i f f l 2 S C 2 3 3 1 ia iS fê x ^ ^ 7 > /X n -, v - f > rm t U K ? n f c 7 - f > 7'- w t - ^ ( f - f i ¿*<7 K ÿ ^ f '< £ i r M M x - t o iff : m m )

2sc790

Abstract: transistor 2SC 790 c790 2SA490 AC75 jd2030 SS4490 2SC790 O
Contextual Info: 2 s c 790 o ^ SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR n tim m m o Power Amplifier Applications 3 S A 4 9 0 £ 3 V 7 *iJ H i - F i OTL / y jt ' J T t i i ^ l O W ^ ^ ^ 7 y 7 K M '& 'Z 't o Complementary to 2SA490 10 Watts Output is Available. MAXIMUM RATINGS Ta=g5"C

2sk81

Abstract: 2SK812 IEM-521 blf 578 3854 ru 4c diode
Contextual Info: M O S Field Effect P o w e r Transistor 2SK812 M O S FET jim m 2SK812 li, N IZ «fc ^ ¡ É ^ f ê K O T f ë f r i i i i È X >f f f- > t > Î 6 Î n > 1 g u / y # 'f MOS F E T T”, 5 V f H 7 K , < , > X 7 ^ S ^ y f > ijf [ J ic ^ # 1 4 a T t ¥ m m ,

ASI10552

Abstract: AVD002F
Contextual Info: AVD002F NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .250 2L FLG B A DESCRIPTION: .100 X 45° ØD .088 x 45° CHAMFER The ASI AVD002F is Designed for C B FEATURES: • • • Omnigold Metalization System E F G H I MAXIMUM RATINGS 250 mA IC J K MAXIMUM

ASI10624

Abstract: MLN2033F
Contextual Info: MLN2033F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI MLN2033F is Designed for A ØD FEATURES: • • • Omnigold Metalization System B .060 x 45° CHAMFER C E G L F H J I K P MN MAXIMUM RATINGS 0.5 A IC 40 V VCBO VCES

K 790

Abstract: ASI10626 MLN1033F transistor k 790
Contextual Info: MLN1033F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI MLN1033F is Designed for A ØD FEATURES: B .060 x 45° CHAMFER C E • • • Omnigold Metalization System G L F H J I K M NP MAXIMUM RATINGS IC 0.5 A VCBO 40 V 25 V

2SK872

Abstract: IRF 545 TRANSISTOR b 772 p UPC1100 TLE 6299 R MFE 521 261717
Contextual Info: M O S Field Effect Pow er Transistor 2SK872 N f t ^ ' ° 7 -M O S i 2 S K 8 7 2 i, N T '* > X ^ <, X >f -y f- > / ?• > /''.iii1 !?. # f f l — MOS F E T ( - ¥ - f Ì ! mm *s'i*^ lT J3 tj , ¡ÉfJSlìSEX / D C - D C 3 > ^ '- ^ i:iilt t „ m ° V d ss

a935

Abstract: transistor a935 a935 transistor 2SK2157 7824 5A oasis T460 MEI-603
Contextual Info: "r N E C — • is — h r ^ MOS Field Effect Transistor 2 S K 2 1 5 7 MOS FET 2SK2157liN9l -V7-JI'«i MOSFETT, 5 V ® S * IC ® tH * • y ?> 7 m ?T T * < X -f y *>, 4 t m m m $ L : mm) * m s ,m > 5.7 ± 0.1 fc &b, 7 " 7 3- n . 2 . — 1.5 ± 0.1 DC/DCu > / < - * £ ¿ilC®3ii-?To

2SJ411

Abstract: TC-8022 ru 4c diode
Contextual Info: MOS h 7 > y 'X i! M OS Field Effect Transistor 2SJ411 ? ± \s M OS FET X 2S J411 it P 5 1 -V M O S F E T T \ 5 ' V M y ^ :M % > ^ 7 m 1C O t ± i * t C J: 5 ¡ t & S K t ! ) m m e : mm) 7.0 MAX. y - n m z i 7 ^ ^ . d c/d c = 3 > / 'i- ^ * if ic g ia - ? - r 0

2SK929

Abstract: PS7K 2 fy
Contextual Info: M O S Field Effect Pow er Transistor 2SK929 MOS F E T Itffl 2SK929 l ì , T N MOS F E T 6 < , t •Vf- > r m , X ' i y f y tS > , K W m T O : mm) ¡ S l t l 'i S - X 'i 10.5 M A X . DC-D C 3 > /< - ? 4.7 M A X . 3 .0 M A X . # i t ° V d ss = 500 V, I dcdc) =

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3053 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION T his pro d u ct is N -C han ne l M O S Field E ffe ct T ra n sisto r PA R T N U M B E R PACKAGE 2S K 305 3 Isolated T O -220 d e sig n e d for high cu rre n t sw itch ing ap plicatio ns.