TRANSISTOR K 799 Search Results

TRANSISTOR K 799 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR K 799 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
PDTA143XE Abstract: SC-75 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA143XE PNP resistor-equipped transistor Product specification 1999 Apr 20 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA143XE FEATURES • Built-in bias resistors R1 and R2 typ. 4.7 kΩ and 10 kΩ	Original	M3D173 PDTA143XE MAM345 SC-75 OT416) SCA63 115002/00/01/pp8 PDTA143XE SC-75	PDF
PDTC143XE Abstract: PDTA143XE SC-75 PDTA143 PDTA143X Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC143XE NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 29 1999 May 21 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143XE FEATURES • Built-in bias resistors R1 and R2 typ. 4.7 kΩ and 10 kΩ	Original	M3D173 PDTC143XE MAM346 SC-75; OT416) 115002/00/02/pp8 PDTC143XE PDTA143XE SC-75 PDTA143 PDTA143X	PDF
PDTA124XE Abstract: PDTC124XE SC-75 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC124XE NPN resistor-equipped transistor Product specification Supersedes data of 1998 Sep 21 1999 May 18 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124XE FEATURES • Built-in bias resistors R1 and R2 typ. 22 kΩ and 47 kΩ	Original	M3D173 PDTC124XE MAM346 SC-75; OT416) 115002/00/03/pp8 PDTA124XE PDTC124XE SC-75	PDF
PDTA124XE Abstract: PDTC124XE SC-75 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA124XE PNP resistor-equipped transistor Product specification Supersedes data of 1998 Nov 25 1999 May 21 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA124XE FEATURES • Built-in bias resistors R1 and R2 typ. 22 kΩ and 47 kΩ	Original	M3D173 PDTA124XE MAM345 SC-75) 115002/00/03/pp8 PDTA124XE PDTC124XE SC-75	PDF
PDTC114YE Abstract: SC-75 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC114YE NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 19 1999 May 18 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114YE FEATURES PINNING • Built-in bias resistors R1 and R2 typ. 10 kΩ and 47 kΩ	Original	M3D173 PDTC114YE 115002/00/03/pp8 PDTC114YE SC-75	PDF
2SK799 Abstract: 100C Contextual Info: N E C ELECTRONICS INC 98D 18948 D ~/3 T ~ - N-CHANNELMOS FIELD EFFECT POWER TRANSISTOR "t ô D E S C R IP T IO N D e L.427S25 0aia^4fl T I 2SK799 The 2 S K 799 is N-channel MOS Field Effect Power Transistor P A C K A G E D IM E N S IO N S in millimeters (Inches	OCR Scan	b427S2S 2SK799 2SK799 100C	PDF
BP317 Abstract: MMBTA42 MMBTA92 254-D Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBTA42 NPN high-voltage transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN high-voltage transistor MMBTA42 PINNING FEATURES • Low current max. 100 mA PIN	Original	M3D088 MMBTA42 MMBTA92. MAM255 603506/01/pp8 BP317 MMBTA42 MMBTA92 254-D	PDF
MMBTA92 Abstract: BP317 MMBTA42 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBTA92 PNP high-voltage transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification PNP high-voltage transistor MMBTA92 PINNING FEATURES • Low current max. 100 mA PIN	Original	M3D088 MMBTA92 MMBTA42. MAM256 603506/01/pp8 MMBTA92 BP317 MMBTA42	PDF
PDTC123ET Abstract: marking code 10 sot23 PDTA123JT Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTA123JT PNP resistor-equipped transistor Product specification 1999 May 27 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA123JT FEATURES • Built-in bias resistors typ 2.2 kΩ	Original	M3D088 PDTA123JT MAM100 115002/01/pp8 PDTC123ET marking code 10 sot23 PDTA123JT	PDF
BP317 Abstract: MMBT2222A PMBT2907A Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBT2222A NPN switching transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN switching transistor MMBT2222A FEATURES PINNING • High current max. 600 mA PIN • Low voltage (max. 40 V).	Original	M3D088 MMBT2222A PMBT2907A. MAM255 603506/01/pp8 BP317 MMBT2222A PMBT2907A	PDF
MMBT3906 PHILIPS Abstract: transistor MMBT3906 marking code 10 sot23 marking code ce SOT23 BP317 MMBT3904 MMBT3906 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBT3906 PNP switching transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification PNP switching transistor MMBT3906 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 40 V).	Original	M3D088 MMBT3906 MMBT3904. MAM256 603506/01/pp8 MMBT3906 PHILIPS transistor MMBT3906 marking code 10 sot23 marking code ce SOT23 BP317 MMBT3904 MMBT3906	PDF
marking code 10 sot23 Abstract: BP317 MMBT3904 MMBT3906 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBT3904 NPN switching transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN switching transistor MMBT3904 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 40 V).	Original	M3D088 MMBT3904 MMBT3906. MAM255 603506/01/pp8 marking code 10 sot23 BP317 MMBT3904 MMBT3906	PDF
PDTA124EEF Abstract: SC-89 BP317 PDTA124E Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA124EEF PNP resistor-equipped transistor Product specification 2001 Jun 11 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA124EEF FEATURES PINNING • Built-in bias resistors R1 and R2 typical 22 kΩ each	Original	M3D425 PDTA124EEF 613514/01/pp8 PDTA124EEF SC-89 BP317 PDTA124E	PDF
BP317 Abstract: PMBT5401 PMBT5550 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 PMBT5401 PNP high-voltage transistor Product specification Supersedes data of 1997 Apr 09 1999 Apr 15 Philips Semiconductors Product specification PNP high-voltage transistor PMBT5401 FEATURES PINNING • Low current max. 300 mA	Original	M3D088 PMBT5401 PMBT5550. MAM256 SCA63 115002/00/03/pp8 BP317 PMBT5401 PMBT5550	PDF

SC88 SOT363 plastic package Ht9 MARKING CODE Abstract: MARKING ht9 sot363 MARKING CODE ht9 BP317 sot363 marking DATE code Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PUMH9 NPN resistor-equipped double transistor Product specification 1999 May 06 Philips Semiconductors Product specification NPN resistor-equipped double transistor PUMH9 FEATURES • Transistors with built-in bias resistors R1 typ. 10 kΩ	Original	MBD128 MAM342 115002/00/01/pp8 SC88 SOT363 plastic package Ht9 MARKING CODE MARKING ht9 sot363 MARKING CODE ht9 BP317 sot363 marking DATE code	PDF
PDTC143XE Abstract: Transistor B 886 PDTA143 PDTA143XE PDTA143X Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1998 May 29 Philips Sem iconductors 1999 May 21 PHILIPS Philips Semiconductors Product specification PDTC143XE NPN resistor-equipped transistor FEATURES • Built-in bias resistors R1 and R2 typ. 4.7 k£2 and 10 k£2	OCR Scan	PDTC143XE SC-75 OT416) PDTA143XE. 115002/00/02/pp8 PDTC143XE Transistor B 886 PDTA143 PDTA143XE PDTA143X	PDF
MARKING CODE ht9 Abstract: MARKING ht9 sot363 h9 marking OT363 SOT363 marking code H9 transistor h9 MARKING HT9 SC88 SOT363 plastic package Ht9 MARKING CODE hT9 marking Contextual Info: DISCRETE SEMICONDUCTORS SHEET PUMH9 NPN resistor-equipped double transistor 1999 May 06 Product specification Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN resistor-equipped double transistor PUMH9 FEATURES • T ransistors with built-in bias resistors R1 typ. 10 k£2	OCR Scan	SCA64 15002/00/01/pp8 MARKING CODE ht9 MARKING ht9 sot363 h9 marking OT363 SOT363 marking code H9 transistor h9 MARKING HT9 SC88 SOT363 plastic package Ht9 MARKING CODE hT9 marking	PDF
PDTA124XE Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1998 Nov 25 Philips Sem iconductors 1999 May 21 PHILIPS Philips Semiconductors Product specification PDTA124XE PNP resistor-equipped transistor FEATURES • Built-in bias resistors R1 and R2 typ. 22 k£2 and 47 k£2	OCR Scan	PDTA124XE SC-75 OT416) PDTC124XE. 115002/00/03/pp8 PDTA124XE	PDF
PDTA143Z Abstract: PDTC143Z PDTA143 Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1998 May 19 Philips Sem iconductors 1999 May 21 PHILIPS Philips Semiconductors Product specification PDTC143ZT NPN resistor-equipped transistor FEATURES PINNING • Built-in bias resistors R1 and R2 typ. 4.7 k£2 and 47 k£2	OCR Scan	PDTC143ZT 115002/00/03/pp8 PDTA143Z PDTC143Z PDTA143	PDF
PDTC114EE Abstract: PDTA114EE SC-75 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC114EE NPN resistor-equipped transistor Product specification Supersedes data of 1998 Nov 26 1999 May 18 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EE FEATURES PINNING • Built-in bias resistors R1 and R2 typ. 10 kΩ each	Original	M3D173 PDTC114EE 115002/00/04/pp8 PDTC114EE PDTA114EE SC-75	PDF
PDTA123JE Abstract: PDTC123JE SC-75 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC123JE NPN resistor-equipped transistor Product specification Supersedes data of 1998 Aug 03 1999 May 21 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123JE FEATURES • Built-in bias resistors R1 and R2 typ. 2.2 and 47 kΩ	Original	M3D173 PDTC123JE MAM346 SC-75; OT416) 115002/00/03/pp8 PDTA123JE PDTC123JE SC-75	PDF
TAA 785 A IC Contextual Info: HARKTECH INTERNATIONAL ~Û7 I > F \| S 7 ci citI SS TRANSISTOR COUPLER 5799655 M A R K T E C H INTERNATIONAL 87D 00124 DOOD1SM D T-H-J-ÏZ M TPC6320 INFRARED LED+PHOXO TRANSISTOR APPLICATIONS • AC LINE/DIGITAL ISOLATOR • PROGRAMMABLE CONTROLLERS A -H • SOLID STATE RELAY	OCR Scan	TPC6320 TPC6320 TAA 785 A IC	PDF
AN 6752 Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1998 May 15 Philips Sem iconductors 1999 Apr 13 PHILIPS Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA114TU FEATURES • Built-in bias resistor R1 typ. 10 k£2	OCR Scan	PDTA114TU OT323) OT323 PDTC114TU. 115002/00/03/pp8 AN 6752	PDF
Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1998 May 29 Philips Sem iconductors 1999 May 21 PHILIPS Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143TT PINNING FEATURES • Built-in bias resistor R1 typ. 4.7 k£2	OCR Scan	PDTC143TT 115002/00/02/pp8	PDF

TRANSISTOR K 799 Search Results

TRANSISTOR K 799 Result Highlights (5)

TRANSISTOR K 799 Datasheets Context Search

PDTA143XE

PDTC143XE

PDTA124XE

PDTA124XE

PDTC114YE

2SK799

BP317

MMBTA92

PDTC123ET

BP317

MMBT3906 PHILIPS

marking code 10 sot23

PDTA124EEF

BP317

SC88 SOT363 plastic package Ht9 MARKING CODE

PDTC143XE

MARKING CODE ht9

PDTA124XE

PDTA143Z

PDTC114EE

PDTA123JE

TAA 785 A IC

AN 6752