TRANSISTOR K2 Search Results

TRANSISTOR K2 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

TRANSISTOR K2 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MN1280 Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor	Original		PDF
oz960 Abstract: khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors	Original	KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j	PDF
97CC Abstract: transistor ESM 16 transistor ESM 30 ESM18 transistor ESM 18 Contextual Info: ESM 18 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE High current fast switching transistor Transistor de commutation rapide fort courant V CEO 100 V Amplification BF ou H F grands signaux •c 25 A Thermal fatigue inspection	OCR Scan	CB-19 97CC transistor ESM 16 transistor ESM 30 ESM18 transistor ESM 18	PDF
MJE2955 Abstract: 2N3645 bc557 BC307 BC212 Contextual Info: 87’ Pf WDUCT PROFILE TO-92 TO-92SP TO-237 TO-220 SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR HIGH CURRENT TRANSISTOR POWER TRANSISTOR HI-SIIMCERITY MICROELECTRONICS CORP. COMPANY PROFILE H i-S in ce rity M icroelectronics Corp. is a manu The facturer	OCR Scan	O-92SP O-237 O-220 O-928> iO051 MJE2955 2N3645 bc557 BC307 BC212	PDF
la 4440 amplifier circuit diagram 300 watt Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode	OCR Scan	AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492	PDF
CMBT5400 Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5400 HIGH VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT5400 = K2 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration	Original	OT-23 CMBT5400 C-120 CMBT5400	PDF
k2415 Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2415, 2SK2415-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2S K2415 is N-Channel MOS Field Effect Transistor designed in m illim eters for high voltage switching applications.	OCR Scan	2SK2415, 2SK2415-Z K2415	PDF
transistor smd K2 Abstract: CMBT5400 Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT5400 HIGH VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT5400 = K2 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER	Original	ISO/TS16949 OT-23 CMBT5400 C-120 transistor smd K2 CMBT5400	PDF
2SC5603 Abstract: 2SC5676 Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA846TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low noise operation • 2 different built-in transistors (2SC5603, 2SC5676) Q1: Built-in high gain transistor	Original	PA846TD 2SC5603, 2SC5676) S21e2 2SC5603 2SC5676 2SC5603 2SC5676	PDF
ic 901 Abstract: 2SC5603 2SC5676 uPA846TC-T1 Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA846TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • 2 different built-in transistors (2SC5603, 2SC5676) Q1: 13.5 GHz fT high-gain transistor	Original	PA846TC 2SC5603, 2SC5676) S21e2 2SC5603 2SC5676 ic 901 2SC5603 2SC5676 uPA846TC-T1	PDF
2SC5435 Abstract: 2SC5600 IC 14558 5mA25 Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA841TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5600) Q1: Built-in high-gain transistor	Original	PA841TD 2SC5435, 2SC5600) S21e2 2SC5435 2SC5600 2SC5435 2SC5600 IC 14558 5mA25	PDF
transistor smd marking k2 Abstract: transistor marking SA p sot-23 smd transistor k2 CMBT5400 transistor smd K2 MARKING SMD pnp TRANSISTOR ec Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5400 HIGH VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT5400 = K2 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS	Original	OT-23 CMBT5400 C-120 transistor smd marking k2 transistor marking SA p sot-23 smd transistor k2 CMBT5400 transistor smd K2 MARKING SMD pnp TRANSISTOR ec	PDF
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT5400 HIGH VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT5400 = K2 PACKAGE OUTLINE DETAILS	Original	OT-23 CMBT5400 C-120	PDF
2SC5602 Abstract: 2SC5602-T1 nec 8725 marking TW NEC 2561 Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5602 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • High-gain transistor for buffer amplifier : S21e2 = 10.0 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 5 mA	Original	2SC5602 S21e2 2SC5602-T1 2SC5602 2SC5602-T1 nec 8725 marking TW NEC 2561	PDF

2SC5435 Abstract: 2SC5437 NEC 2505 nj Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA836TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5437) Q1: Built-in low noise, high-gain transistor	Original	PA836TD 2SC5435, 2SC5437) S21e2 2SC5435 2SC5437 2SC5435 2SC5437 NEC 2505 nj	PDF
Contextual Info: CMBT5400 HIGH VOLTAGE TRANSISTOR P -N -P transistor Marking CMBT5400 = K2 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.48 0.38 0.14 0.70 0.50 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 1 1.4 2.6 2.4 R0.1 c m _1.02 - 0.12 1 0.02 0.89"	OCR Scan	CMBT5400	PDF
transistor NEC 7812 Abstract: 2SC5668 2SC5676 FB 3306 NEC 7812 2SC567 nec japan 7812 Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA848TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • 2 different built-in transistors (2SC5668, 2SC5676) Q1: 21.0 GHz fT high-gain transistor, ideal for 3.6 to 4.2 GHz oscillation application	Original	PA848TD 2SC5668, 2SC5676) S21e2 2SC5668 2SC5676 transistor NEC 7812 2SC5668 2SC5676 FB 3306 NEC 7812 2SC567 nec japan 7812	PDF
07MS001 Abstract: transistor 7835 LPT16ED yig oscillator application note germanium transistors NPN bipolar transistor ghz s-parameter RF Bipolar Transistor 07AN001 10GHz bipolar transistor 50 ghz s-parameter Contextual Info: LPT16ED 30 GHz SiGe Bipolar Transistor Production Information Applications Product Description Low phase noise oscillators up to 16 GHz The LPT16ED is a SiGe low phase noise, high frequency npn transistor for oscillator applications up to 16GHz. The transistor exhibits low 1/f noise and provides	Original	LPT16ED LPT16ED 16GHz. May/01 07MS001 transistor 7835 yig oscillator application note germanium transistors NPN bipolar transistor ghz s-parameter RF Bipolar Transistor 07AN001 10GHz bipolar transistor 50 ghz s-parameter	PDF
k72 transistor Abstract: transistor k72 2N5143 MPS-K72 k72 npn TRANSISTOR C 2026 MPS-K71 544S K70 Package TP6224 Contextual Info: CDDilPIIC EconolineR Plastic-Molded D r K H j U C Silicon SEPT Transistors ★ - T A B L E 1 TRANSISTOR KITS MPS-K20, M PS-K21 and M P S-K 22 are three, five and nine transistor kits consisting of M P S-A 20's with various hFE selections. M PS-K70, M PS-K71 and M PS-K72 are three, five and nine transistor kits consisting of M P S-A 70’s with various hFE selections.	OCR Scan	MPS-K20, MPS-K21 MPS-K22 MPS-A20 MPS-K70, MPS-K71 MPS-K72 MPS-A70 MPS-K20/MPS-K70 10VDC k72 transistor transistor k72 2N5143 k72 npn TRANSISTOR C 2026 544S K70 Package TP6224	PDF
Contextual Info: CMBT5400 HIGH VOLTAGE TRANSISTOR P-N-P transistor Marking CMBT5400 = K2 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 I1 1 1 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 0.14 0.48 0.38 3 I I1 2.6 2.4 JL02 o.ar 0.60 0.40 2.00 1.80 ABSOLUTE MAXIMUM RATINGS	OCR Scan	CMBT5400	PDF
2SC5603 Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA893TD NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • Built-in high gain transistor fT = 13.5 GHz TYP., S21e2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz	Original	PA893TD S21e2 2SC5603) 2SC5603 PA893TD-T3 2SC5603	PDF
2SC5600 Abstract: 2SC5737 IC 14558 IC 2801 UPA858TD-T3 Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA858TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • 2 different built-in transistors (2SC5737, 2SC5600) Q1: Built-in low noise transistor NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz	Original	PA858TD 2SC5737, 2SC5600) S21e2 2SC5737 2SC5600 PA858TD-T3 2SC5600 2SC5737 IC 14558 IC 2801 UPA858TD-T3	PDF
nec a1640 Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA891TD NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Built-in low phase distortion transistor suited for OSC operation fT = 5.0 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz	Original	PA891TD 2SC5600) 2SC5600 PA891TD-T3 P15538EJ1V0DS nec a1640	PDF
2SC5600 Abstract: marking 603 npn transistor NEC 1093 Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA891TD NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Built-in low phase distortion transistor suited for OSC operation fT = 5.0 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz	Original	PA891TD S21e2 2SC5600) 2SC5600 PA891TD-T3 2SC5600 marking 603 npn transistor NEC 1093	PDF

TRANSISTOR K2 Search Results

TRANSISTOR K2 Result Highlights (5)

TRANSISTOR K2 Datasheets Context Search

MN1280

oz960

97CC

MJE2955

la 4440 amplifier circuit diagram 300 watt

CMBT5400

k2415

transistor smd K2

2SC5603

ic 901

2SC5435

transistor smd marking k2

2SC5602

2SC5435

transistor NEC 7812

07MS001

k72 transistor

2SC5603

2SC5600

nec a1640

2SC5600