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    TRANSISTOR K2605 Search Results

    TRANSISTOR K2605 Result Highlights (5)

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    2SC6026MFV
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

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    k2605

    Abstract: K2605 transistor K2605 TOSHIBA transistor k2605 024 marking code 2SK2605 transistor 2sk2605
    Contextual Info: 2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2605 Switching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) High forward transfer admittance : |Yfs| = 3.8 S (typ.) Low leakage current


    Original     		2SK2605 k2605 K2605 transistor K2605 TOSHIBA transistor k2605 024 marking code 2SK2605 transistor 2sk2605 PDF

    K2605

    Abstract: K2605 transistor K2605 TOSHIBA transistor k2605 2SK2605 transistor 2sk2605 2sK2605 TRANSISTOR
    Contextual Info: 2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2605 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) z High forward transfer admittance : |Yfs| = 3.8 S (typ.) z Low leakage current


    Original     		2SK2605 45oducts K2605 K2605 transistor K2605 TOSHIBA transistor k2605 2SK2605 transistor 2sk2605 2sK2605 TRANSISTOR PDF

    K2605

    Abstract: K2605 transistor 2SK2605 K2605 TOSHIBA
    Contextual Info: 2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2605 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) z High forward transfer admittance : |Yfs| = 3.8 S (typ.) z Low leakage current


    Original     		2SK2605 K2605 K2605 transistor 2SK2605 K2605 TOSHIBA PDF

    k2605

    Abstract: K2605 transistor K2605 TOSHIBA 2SK2605 transistor k2605
    Contextual Info: 2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2605 Switching Regulator Applications z Unit: mm Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) : |Yfs| = 3.8 S (typ.) z High forward transfer admittance z Low leakage current


    Original     		2SK2605 k2605 K2605 transistor K2605 TOSHIBA 2SK2605 transistor k2605 PDF