TRANSISTOR K2605 Search Results

TRANSISTOR K2605 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR K2605 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
k2605 Abstract: K2605 transistor K2605 TOSHIBA transistor k2605 024 marking code 2SK2605 transistor 2sk2605 Text: 2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2605 Switching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) High forward transfer admittance : \|Yfs\| = 3.8 S (typ.) Low leakage current	Original	2SK2605 k2605 K2605 transistor K2605 TOSHIBA transistor k2605 024 marking code 2SK2605 transistor 2sk2605	PDF
K2605 Abstract: K2605 transistor K2605 TOSHIBA transistor k2605 2SK2605 transistor 2sk2605 2sK2605 TRANSISTOR Text: 2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2605 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 3.8 S (typ.) z Low leakage current	Original	2SK2605 45oducts K2605 K2605 transistor K2605 TOSHIBA transistor k2605 2SK2605 transistor 2sk2605 2sK2605 TRANSISTOR	PDF
K2605 Abstract: K2605 transistor 2SK2605 K2605 TOSHIBA Text: 2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2605 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 3.8 S (typ.) z Low leakage current	Original	2SK2605 K2605 K2605 transistor 2SK2605 K2605 TOSHIBA	PDF
k2605 Abstract: K2605 transistor K2605 TOSHIBA 2SK2605 transistor k2605 Text: 2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2605 Switching Regulator Applications z Unit: mm Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) : \|Yfs\| = 3.8 S (typ.) z High forward transfer admittance z Low leakage current	Original	2SK2605 k2605 K2605 transistor K2605 TOSHIBA 2SK2605 transistor k2605	PDF