TRANSISTOR K2717 Search Results

TRANSISTOR K2717 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SC6026MFV		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

TRANSISTOR K2717 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SK2717 Contextual Info: TOSHIBA 2SK2717 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2717 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance	OCR Scan	2SK2717 2SK2717	PDF
transistor k2717 Abstract: K2717 K2717 POWER TRANSISTOR k2717 equivalent 2SK2717 Contextual Info: 2SK2717 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2717 DC−DC Converter and Motor Drive Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 2.3 Ω (typ.) High forward transfer admittance : \|Yfs\| = 4.4 S (typ.)	Original	2SK2717 transistor k2717 K2717 K2717 POWER TRANSISTOR k2717 equivalent 2SK2717	PDF
K2717 Abstract: transistor k2717 k2717 equivalent 2SK2717 K2717 POWER TRANSISTOR Contextual Info: 2SK2717 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2717 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 2.3 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 4.4 S (typ.)	Original	2SK2717 K2717 transistor k2717 k2717 equivalent 2SK2717 K2717 POWER TRANSISTOR	PDF
K2717 Abstract: transistor k2717 Contextual Info: 2SK2717 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2717 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 2.3 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 4.4 S (typ.)	Original	2SK2717 K2717 transistor k2717	PDF
K2717 Abstract: transistor k2717 Contextual Info: 2SK2717 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2717 DC−DC Converter and Motor Drive Applications z Low drain−source ON-resistance : RDS (ON) = 2.3 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 4.4 S (typ.)	Original	2SK2717 K2717 transistor k2717	PDF
transistor k2717 Abstract: K2717 2SK2717 TRANSISTOR MAKING Contextual Info: 2SK2717 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2717 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 2.3 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 4.4 S (typ.)	Original	2SK2717 transistor k2717 K2717 2SK2717 TRANSISTOR MAKING	PDF
TOSHIBA 1SS Abstract: 2SK2717 2SK271 Contextual Info: T O S H IB A 2SK2717 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2717 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10 ± 0.3 : RßS (ON) = 2 .3 0 (Typ.)	OCR Scan	2SK2717 TOSHIBA 1SS 2SK2717 2SK271	PDF
K2717 Contextual Info: 2SK2717 TO SHIBA TOSHIBA FIELD EFFECT TRANSISTOR n SILICON N CHANNEL MOS TYPE tt-MOSIII iÊÊF i• m.? W 7 i « ■7 m HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS	OCR Scan	2SK2717 0111X1 K2717	PDF