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    TRANSISTOR K36 Search Results

    TRANSISTOR K36 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR K36 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    sf 128 transistor

    Abstract: TRANSISTOR SF 128 Triode 8050 marking P53 transistor SC73P2602 ic marking k52 SC73P16 bd 8050 TRANSISTOR part MARKING k48 marking k47
    Contextual Info: PROGRAMMABLE INFRARED REMOTE TRANSMITTER WITH BUILT-IN TRANSISTOR DESCRIPTION SC73P2602 is SC73 core based programmable remote transmitter 4-bit MCU with infrared transmitting transistor and built-in 2K OTP program memory supporting in-system program (ISP) which can optimize the stock control.


    Original     		SC73P2602 SC73P2602 SC73C16 sf 128 transistor TRANSISTOR SF 128 Triode 8050 marking P53 transistor ic marking k52 SC73P16 bd 8050 TRANSISTOR part MARKING k48 marking k47 PDF

    K3620

    Abstract: AC2500 K3621
    Contextual Info: Photocoupler K3620 • K3621 DIMENSION These Photocouplers cosist of a Gallium Arsenide Infrared Emitting Unit : mm Diode and a Silicon NPN PhotoDarlington transistor in a 6-pin package. FEATURES • Collector-Emitter Voltage : Min.35V • Current Transfer Ratio : Typ.500% (at IF=1mA, VCE=2V)


    Original     		K3620 K3621 AC2500Vrms E107486 K3620 AC2500 K3621 PDF

    K3640

    Abstract: K3641 AC2500 vending machine
    Contextual Info: Photocoupler K3640 • K3641 DIMENSION These Photocouplers cosist of two Gallium Arsenide Infrared Emitting Unit : mm Diodes and a Silicon NPN PhotoDarlington transistor in a 6-pin package. FEATURES • Collector-Emitter Voltage : Min.35V • Current Transfer Ratio : Typ.500% (at IF= ±1mA, VCE=2V)


    Original     		K3640 K3641 AC2500Vrms E107486 K3640 K3641 AC2500 vending machine PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 PDF

    Contextual Info: 2SK3633 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type −MOS IV 2SK3633 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.)


    Original     		2SK3633 PDF

    2SK3633

    Abstract: SC-65
    Contextual Info: 2SK3633 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS IV 2SK3633 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.)


    Original     		2SK3633 2SK3633 SC-65 PDF

    Contextual Info: 2SK3633 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS IV 2SK3633 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.)


    Original     		2SK3633 PDF

    K3667

    Abstract: toshiba k3667 transistor compatible k3667 2SK3667 ALL k3667
    Contextual Info: 2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)


    Original     		2SK3667 K3667 toshiba k3667 transistor compatible k3667 2SK3667 ALL k3667 PDF

    2SK3633

    Abstract: SC-65
    Contextual Info: 2SK3633 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS IV 2SK3633 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.)


    Original     		2SK3633 2SK3633 SC-65 PDF

    Contextual Info: 2SK3633 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS IV 2SK3633 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.)


    Original     		2SK3633 PDF

    K3667

    Abstract: toshiba k3667 2SK3667 transistor compatible k3667
    Contextual Info: 2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)


    Original     		2SK3667 K3667 toshiba k3667 2SK3667 transistor compatible k3667 PDF

    toshiba a114

    Abstract: 2SK3633 SC-65 K3633 200VW
    Contextual Info: 2SK3633 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS IV 2SK3633 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.)


    Original     		2SK3633 toshiba a114 2SK3633 SC-65 K3633 200VW PDF

    Contextual Info: 2SK3669 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII 2SK3669 Switching Regulator, Audio Amplifier and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 95 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6 S (typ.)


    Original     		2SK3669 PDF

    RP112N321D

    Contextual Info: RP112x SERIES Low Noise 150mA LDO REGULATOR NO.EA-258-131024 OUTLINE The RP112x Series are CMOS-based voltage regulator LDO ICs, which have been developed using the CMOS process technology, with high output voltage accuracy, low-supply current, low On-resistance transistor,


    Original     		RP112x 150mA EA-258-131024 10kHz 100kHz. Room403, Room109, 10F-1, RP112N321D PDF

    Contextual Info: 2SK3662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSII 2SK3662 Switching Regulator, DC−DC Converter, Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 9.4 mΩ (typ.) • High forward transfer admittance: |Yfs| = 55 S (typ.)


    Original     		2SK3662 PDF

    K3662

    Abstract: K366 2SK3662
    Contextual Info: 2SK3662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSII 2SK3662 Switching Regulator, DC−DC Converter, Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 9.4 mΩ (typ.) • High forward transfer admittance: |Yfs| = 55 S (typ.)


    Original     		2SK3662 K3662 K366 2SK3662 PDF

    2SK3625

    Abstract: K3625 K362
    Contextual Info: 2SK3625 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3625 Chopper Regulator DC−DC Converter, and Motor Drive Applications Unit: mm z Low drain−source ON resistance: RDS (ON) = 65 mΩ (typ.) z High forward transfer admittance: |Yfs| = 10 S (typ.)


    Original     		2SK3625 2SK3625 K3625 K362 PDF

    K3669

    Abstract: 2SK3669 MJ1005
    Contextual Info: 2SK3669 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII 2SK3669 Switching Regulators, for Audio Amplifier and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 95 mΩ (typ.) · High forward transfer admittance: |Yfs| = 6 S (typ.)


    Original     		2SK3669 K3669 2SK3669 MJ1005 PDF

    K3669

    Contextual Info: 2SK3669 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VII 2SK3669 Switching Regulator, Audio Amplifier and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 95 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6 S (typ.)


    Original     		2SK3669 K3669 PDF

    K3669

    Abstract: K366 2SK3669
    Contextual Info: 2SK3669 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VII 2SK3669 Switching Regulator, Audio Amplifier and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 95 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6 S (typ.)


    Original     		2SK3669 K3669 K366 2SK3669 PDF

    K3669

    Abstract: 2SK3669 MJ1005
    Contextual Info: 2SK3669 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VII 2SK3669 Switching Regulator, Audio Amplifier and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 95 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6 S (typ.)


    Original     		2SK3669 K3669 2SK3669 MJ1005 PDF

    K3662

    Abstract: 2SK3662
    Contextual Info: 2SK3662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSII 2SK3662 Switching Regulator, DC−DC Converter, Motor Drive Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 9.4 mΩ (typ.) • High forward transfer admittance: |Yfs| = 55 S (typ.)


    Original     		2SK3662 K3662 2SK3662 PDF

    K3662

    Abstract: 2SK3662
    Contextual Info: 2SK3662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSII 2SK3662 Switching Regulator, DC−DC Converter, Motor Drive Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 9.4 mΩ (typ.) • High forward transfer admittance: |Yfs| = 55 S (typ.)


    Original     		2SK3662 K3662 2SK3662 PDF

    K3662

    Abstract: K366 2SK3662
    Contextual Info: 2SK3662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSII 2SK3662 Switching Regulator, DC−DC Converter, Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 9.4 mΩ (typ.) • High forward transfer admittance: |Yfs| = 55 S (typ.)


    Original     		2SK3662 K3662 K366 2SK3662 PDF