TRANSISTOR K366 Search Results

TRANSISTOR K366 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SC6026MFV		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

TRANSISTOR K366 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
K3667 Abstract: toshiba k3667 transistor compatible k3667 2SK3667 ALL k3667 Contextual Info: 2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance: \|Yfs\| = 5.5 S (typ.)	Original	2SK3667 K3667 toshiba k3667 transistor compatible k3667 2SK3667 ALL k3667	PDF
K3667 Abstract: toshiba k3667 2SK3667 transistor compatible k3667 Contextual Info: 2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance: \|Yfs\| = 5.5 S (typ.)	Original	2SK3667 K3667 toshiba k3667 2SK3667 transistor compatible k3667	PDF
Contextual Info: 2SK3669 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII 2SK3669 Switching Regulator, Audio Amplifier and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 95 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 6 S (typ.)	Original	2SK3669	PDF
K3662 Abstract: K366 2SK3662 Contextual Info: 2SK3662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSII 2SK3662 Switching Regulator, DC−DC Converter, Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 9.4 mΩ (typ.) · High forward transfer admittance: \|Yfs\| = 55 S (typ.)	Original	2SK3662 K3662 K366 2SK3662	PDF
Contextual Info: 2SK3662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSII 2SK3662 Switching Regulator, DC−DC Converter, Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 9.4 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 55 S (typ.)	Original	2SK3662	PDF
K3662 Abstract: K366 2SK3662 Contextual Info: 2SK3662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSII 2SK3662 Switching Regulator, DC−DC Converter, Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 9.4 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 55 S (typ.)	Original	2SK3662 K3662 K366 2SK3662	PDF
K3669 Abstract: 2SK3669 MJ1005 Contextual Info: 2SK3669 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII 2SK3669 Switching Regulators, for Audio Amplifier and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 95 mΩ (typ.) · High forward transfer admittance: \|Yfs\| = 6 S (typ.)	Original	2SK3669 K3669 2SK3669 MJ1005	PDF
K3669 Contextual Info: 2SK3669 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VII 2SK3669 Switching Regulator, Audio Amplifier and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 95 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 6 S (typ.)	Original	2SK3669 K3669	PDF
K3669 Abstract: K366 2SK3669 Contextual Info: 2SK3669 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VII 2SK3669 Switching Regulator, Audio Amplifier and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 95 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 6 S (typ.)	Original	2SK3669 K3669 K366 2SK3669	PDF
K3669 Abstract: 2SK3669 MJ1005 Contextual Info: 2SK3669 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VII 2SK3669 Switching Regulator, Audio Amplifier and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 95 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 6 S (typ.)	Original	2SK3669 K3669 2SK3669 MJ1005	PDF
K3662 Abstract: 2SK3662 Contextual Info: 2SK3662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSII 2SK3662 Switching Regulator, DC−DC Converter, Motor Drive Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 9.4 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 55 S (typ.)	Original	2SK3662 K3662 2SK3662	PDF
K3662 Abstract: 2SK3662 Contextual Info: 2SK3662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSII 2SK3662 Switching Regulator, DC−DC Converter, Motor Drive Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 9.4 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 55 S (typ.)	Original	2SK3662 K3662 2SK3662	PDF
K3662 Abstract: K366 2SK3662 Contextual Info: 2SK3662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSII 2SK3662 Switching Regulator, DC−DC Converter, Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 9.4 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 55 S (typ.)	Original	2SK3662 K3662 K366 2SK3662	PDF
toshiba k3667 Abstract: K3667 ALL k3667 K366 2SK3667 Contextual Info: 2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: \|Yfs\| = 5.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)	Original	2SK3667 toshiba k3667 K3667 ALL k3667 K366 2SK3667	PDF

K3667 Abstract: toshiba k3667 ALL k3667 2sk3667 equivalent 2SK3667 K366 2sk3667 transistor equivalent Contextual Info: 2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: \|Yfs\| = 5.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)	Original	2SK3667 K3667 toshiba k3667 ALL k3667 2sk3667 equivalent 2SK3667 K366 2sk3667 transistor equivalent	PDF
2SK3669 Abstract: K3669 MJ1005 Contextual Info: 2SK3669 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VII 2SK3669 Switching Regulator, Audio Amplifier and Motor Drive Applications Unit: mm 1.5 ± 0. 2 6.5 ± 0.2 High forward transfer admittance: \|Yfs\| = 6 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 100 V)	Original	2SK3669 2SK3669 K3669 MJ1005	PDF
K366 Abstract: K3669 2SK3669 Contextual Info: 2SK3669 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VII 2SK3669 Switching Regulator, Audio Amplifier and Motor Drive Applications Unit: mm 1.5 ± 0. 2 6.5 ± 0.2 High forward transfer admittance: \|Yfs\| = 6 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 100 V)	Original	2SK3669 K366 K3669 2SK3669	PDF
220v AC voltage stabilizer schematic diagram Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 2-6 Fiber Optic Connectors and Accessories . . . . . . . . . . . See Page 121 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 10-122 Fiber Optic Cable, Connectors, and Accessories . . . . . . See Pages 118-122	Original	P390-ND P465-ND P466-ND P467-ND LNG901CF9 LNG992CFBW LNG901CFBW LNG91LCFBW 220v AC voltage stabilizer schematic diagram BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor	PDF