Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR KD 366 Search Results

    TRANSISTOR KD 366 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR KD 366 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PH1516-2

    Abstract: LT 1146 d 1047 transistor Cbc 183 cl PH1516
    Text: /M Îh C m a n A M P com pany Wireless Bipolar Power Transistor, 2W 1.45 -1.60 GHz PH1516-2 Features • • • • • • D e s ig n e d f o r C e llu la r B ase S ta tio n A p p lic a tio n s C lass AB: -33 d B c T yp 3 rd IM I a t 2 W atts PEP C lass A; +4-4 d B m I'yp 3 rd O r d e r I n te r c e p t P o in t


    OCR Scan     		PDF PH1516-2 PH1516-2 LT 1146 d 1047 transistor Cbc 183 cl PH1516

    ZTX752 equivalent

    Abstract: transistor 42-10a data BC369 FXTA92 BSS98
    Text: B o ok 1 Through Hole Com ponents Table of Contents Section Introduction 1 Selection Guide 2 Datasheets 3 Package Outline Dimensions 4 Tape and Reel Specifications 5 Surface Mount Alternatives 6 Alphanumeric Index 7 Book 2 Surface Mount Components - Available on Request


    OCR Scan     		PDF ZVP2106C ZVP2110A ZVP2110C ZVP2120A ZTX788B ZVP2120C ZVP3306A ZVP3310A ZVP4105A 2110C ZTX752 equivalent transistor 42-10a data BC369 FXTA92 BSS98

    Untitled

    Abstract: No abstract text available
    Text: an A M P com pany Wireless Bipolar Power Transistor, 15W 1.78-1.90 GHz Features • • • • • • • • PH1819-15N S/b Cc*4 NPN Silicon Micro w ave Pow er T ran sisto r D esigned for Linear A m plifier A pplications Class AB: -34 dBc Typ 3rd IMD at 15 W atts PKP


    OCR Scan     		PDF PH1819-15N

    rb 60A sk

    Abstract: No abstract text available
    Text: an A M P com pany Wireless Bipolar Power Transistor, 60W 850 - 900 MHz PH0810-60A Features • • • • • D esigned for l.inear A m plifier A pplications Class AB: -30 dBc Typ 3rd 1MD at 60 W atts PEP C o m m o n E m itter C on fig u ratio n In tern a l In p u t a n d O u tp u t Im p ed a n ce M atching


    OCR Scan     		PDF PH0810-60A rb 60A sk

    CL-SH260

    Abstract: ele16 transistor KD 366 AIC-6110 MN 9102 HD153011 KD 368 AMF 4.0 gc three Hitachi Scans-001
    Text: HD153011 2-7 RLL ENDEC built-in VFO Description The HD153011 is a 2-7 RLL ENDEC built-in VFO IC developed for magnetic disks. This device decodes a 2-7 RLL signal read from a magnetic disk into an NRZ signal, and encodes an NRZ signal to be written to a magnetic disk into a 2-7


    OCR Scan     		PDF HD153011 HD153011 AIC-6110, CL-SH260/250 CL-SH260 ele16 transistor KD 366 AIC-6110 MN 9102 KD 368 AMF 4.0 gc three Hitachi Scans-001

    Untitled

    Abstract: No abstract text available
    Text: HD153011 2-7 RLL ENDEC built-in VFO Description The HD153011 is a 2-7 R L L EN D EC built-in VFO IC developed for magnetic disks. This device decodes a 2-7 R L L signal read from a magnetic disk into an N R Z signal, and encodes an NRZ signal to be written to a magnetic disk into a 2-7


    OCR Scan     		PDF HD153011 HD153011 AIC-6110, CL-SH260/250

    AMF 4.0

    Abstract: CL-SH260 signal detection circuit "peak hold" constant vol
    Text: HD153011 2-7 RLL ENDEC built-in VFO Description The HD153011 is a 2-7 R L L E N D E C built-in V FO IC developed for magnetic disks. This device decodes a 2-7 R L L signal read from a magnetic disk into an N R Z signal, and encodes an N R Z signal to be written to a magnetic disk into a 2-7


    OCR Scan     		PDF HD153011 AIC-6110, CL-SH260/250 AMF 4.0 CL-SH260 signal detection circuit "peak hold" constant vol

    transistor c s z 44 v

    Abstract: 6010.5
    Text: A rfK C M m an A M P com pany Radar Pulsed Power Transistor, 25W, 2|is Pulse, 10% Duty 3.1 - 3.5 GHz PH3135-25S Features • • • • • • • • NPN Silicon M icrow ave P o w er T ransistor C o m m o n Base C on figuration B roadban d C lass C O p eratio n


    OCR Scan     		PDF PH3135-25S TT50M50A ATC100A 730503S8-03 transistor c s z 44 v 6010.5

    cl-sh260

    Abstract: msp44
    Text: HD153011 2-7 R L L EN D EC bulli-in VFO Description T he H D 153011 is a 2-7 RLL END EC b u ilt-in VFO IC developed for magnetic disks. This device decodes a 2-7 RLL signal read from a magnetic disk into an NRZ signal, and encodes an NRZ signal to be written to a magnetic disk into a 2-7


    OCR Scan     		PDF HD153011 AIC-6110, CL-SH260/250 cl-sh260 msp44

    C 4458

    Abstract: CC 1215
    Text: AfeXm Coming Attractions m a n A M P com pany Avionics Pulsed Power Transistor, 100W, TDMA Format 960 -1215 MHz PH0912-100 V1.00 Features • • • • • • • • • Designed for JT ID S Application NPN Silicon Microwave Power Transistor Com m on Emiter Configuration


    OCR Scan     		PDF PH0912-100 354ms 4585ms. C 4458 CC 1215

    Untitled

    Abstract: No abstract text available
    Text: / M ik o m an A M P com pany Radar Pulsed Power Transistor, 11W, 1^s Pulse, 10% Duty 3.1-3.4 GHz PH3134-11S V2 00 9^0 c?U 8J> Features ,5/J • • • • • • • • NPN Silicon M icrow ave Pow er T ran sisto r C o m m o n Base C on fig u ratio n B ro a d b an d Class C O p e ra tio n


    OCR Scan     		PDF PH3134-11S ATC100A

    Untitled

    Abstract: No abstract text available
    Text: Afaœm m an A M P com pany C\N Power Transistor, 3.5W 2.3 GHz PH2323-3 Features • N PN S ilic o n M ic ro w a v e P o w e r T r a n s is to r • C o m m o n B a se C o n fig u r a tio n • C la s s C O p e r a tio n • ln te r d ig ita te d G e o m e tr y


    OCR Scan     		PDF PH2323-3

    Untitled

    Abstract: No abstract text available
    Text: Mkcm m an A M P com pany Radar Pulsed Power Transistor, 40W, 150ns Pulse, 10% Duty 1.2-1.4 GHz PH1214-40M V2.00 Features • • • • • • • • NPN S ilicon M icrow ave Pow er Transistor C o m m o n Base C on figuration B roadban d C lass C O p era tio n


    OCR Scan     		PDF 150ns PH1214-40M PH1214-40M

    t4877

    Abstract: No abstract text available
    Text: M m anfaA M PCcomim pany Radar Pulsed Power Transistor, 20W, 100 is Pulse, 10% Duty 2.9-3.1 GHz PH2931-20M Features • • • • • • • • NFN Silicon M icrowave Pow er T ran sisto r C o m m o n Base C onfiguration B ro a d b an d Class C O p e ratio n


    OCR Scan     		PDF PH2931-20M C36-02 T4877 t4877

    Untitled

    Abstract: No abstract text available
    Text: a n A M P com pany Radar Pulsed Power Transistor, 65W, 100 xs Pulse, 10% Duty 2.7 - 2.9 GHz PH2729-65M 9 DO VS? 86 Features • • • • • • • • NPN Silicon M icrow ave P o w er T ran sisto r C o m m o n B ase C o n figu ratio n B ro ad b an d C lass C O p eratio n


    OCR Scan     		PDF PH2729-65M TT30M50A ATC100A

    Untitled

    Abstract: No abstract text available
    Text: w an A M P com pany Radar Pulsed Power Transistor, 100W, 2ms Pulse, 20% Duty 1.2 -1.4 GHz PH1214-100EL V2.01 Features • • • • • • • • NPN Silicon M icrow ave Pow er Transistor C o m m o n Base C on figuration B roadb an d Class C O p eratio n


    OCR Scan     		PDF PH1214-100EL

    Untitled

    Abstract: No abstract text available
    Text: Radar Pulsed Power Transistor, 65W, 100|is Puise, 10% Duty 3.1-3.4 GHz PH3134-65M Features • • • • • • • • N1JN Silicon M icrow ave P ow er T ran sisto r C o m m o n Base C onfig u ratio n B ro a d b an d Class C O p e ratio n High Efficiency In terd ig ita te d G eo m etry


    OCR Scan     		PDF PH3134-65M

    Untitled

    Abstract: No abstract text available
    Text: M an A M P com pany Radar Pulsed Power Transistor, 30W, 100|is Pulse, 10% Duty 3.1-3.5 GHz PH3135-30M V2.00 Features • • • • • • • • NPN Silicon M icrow ave Pow er T ran sisto r C om m on Base C on fig u ratio n B ro a d b an d Class C O p e ratio n


    OCR Scan     		PDF PH3135-30M

    Untitled

    Abstract: No abstract text available
    Text: A Æ c û M W an A M P com pany Radar Pulsed Power Transistor, 55W, 300ns Pulse, 10% Duty 3.1 - 3.4 GHz PH3134-55L Features • N I ’ N S ilic o n M icro w a v e P o w e r T ra n sisto r • C o m m o n B a s e C o n fig u ra tio n • B r o a d b a n d Mass C O p e r a tio n


    OCR Scan     		PDF 300ns PH3134-55L

    transistor 12W

    Abstract: No abstract text available
    Text: / M Ì K H m an A M P com p a n y Radar Pulsed Power Transistor, 12W, 150ns Pulse, 10% Duty 1 .2 -1 .4 GHz PH1214-12M V2.00 Features • • • • • • • • b/a NFN Silicon M icrow ave P o w er T ransistor C o m m o n B ase C o n figu ratio n B ro ad b an d C lass C O p eratio n


    OCR Scan     		PDF 150ns PH1214-12M transistor 12W

    transistor c s z 44 v

    Abstract: No abstract text available
    Text: an A M P com pany Radar Pulsed Power Transistor, 25W, 150ns Pulse, 10% Duty 1.2-1.4 GHz PH1214-25M Features • • • • • • • • NI'N Silicon M icrow ave Pow er T ran sisto r C om m on Base C onfiguration B ro a d b an d Class C O p e ra tio n High Efficiency In terd ig ita te d G eo m etry


    OCR Scan     		PDF 150ns PH1214-25M PH1214-25M transistor c s z 44 v

    Untitled

    Abstract: No abstract text available
    Text: Ajfem *À m an A M P com pany Radar Pulsed Power Transistor, 20W, 2ms Pulse, 10% Duty 1.2-1.4 GHz PH1214-20EL Features • • • • • • • • NPN Silicon M icrow ave P o w er T ran sistor C o m m o n B ase C o n figu ratio n B ro ad b an d C lass C O p eratio n


    OCR Scan     		PDF PH1214-20EL PH1214-25M

    transistor c s z 44 v

    Abstract: No abstract text available
    Text: A ùj ^ yj f w a n A M P com pany Radar Pulsed Power Transistor, 25W, 300^is Pulse, 10% Duty 1.2-1.4 GHz PH1214-25L Features • • • • • • • • NPN Silicon M icrow ave Pow er T ransistor C o m m o n Base C on figuration B roadb an d C lass C O p eratio n


    OCR Scan     		PDF PH1214-25L PH1214-25M transistor c s z 44 v

    Untitled

    Abstract: No abstract text available
    Text: /M ÌK m an A M P com pany Radar Pulsed Power Transistor, 220W, 150ns Pulse, 10% Duty 1.2-1.4 GHz PH1214-220M V2.00 Features NHN Silicon M icrow ave P o w er T ran sistor C o m m o n B ase C o n figu ratio n B ro ad b an d C lass C O peratio n H igh Hfficiency In terd igitated G eo m etry


    OCR Scan     		PDF 150ns PH1214-220M PH1214-220M