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    TRANSISTOR KT 925 Search Results

    TRANSISTOR KT 925 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR KT 925 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor kt 326

    Abstract: transistor KT 3107 Belcanto ST 3010 transistor BU 5027 J 5027-R atakassette SANYO CTP 4360 transistor kt 925 Transstereo 2401.00 transistor KT 816
    Contextual Info: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N O F E R N S E H E N ir .f -t j | R A P io -teievlslon JUNI/JULI 1960 6/7 SKITB 1-8 Mitteilung aus dem VEB Fernsehgerätewerke Staßfurt Informationen für den Fernsehgeräteservice


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    kd226

    Abstract: KD522B transistor c 6073 transistor KT 209 M transistor kt 801 KD226B KT805AM Diode KD 521 a transistor KT 209 4413.13-02
    Contextual Info: SERVICE-MITTEILUNGEN V E B RFT I N D U S T R I E V E R T R I E B ¡D j RUNDFUNK UND F E R N S E H E N raa/o te/ev/s/on | - Ausgabe 1968 M am 4-5 Seite 1 - 8 Mitteilung aus dem VEB RFT IV RuF Leipzig/S 1. Regenerierung von UKW-Tunern 1.1. Allgemeine Informationen


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    transistor d 2689

    Abstract: KD221A10 kd221a1 d 2689 k0221 TRANSISTOR 2688 2689* transistor powerex kd22
    Contextual Info: mNEREX POUEREX INC _ P ]> • 7ST4bEl GOÜElfil Powerex, Inc., M ills Street, Youngwood, Pennsylvania 1S697 412 925-7272 ■ O KD221A10 Tentative Fast Switching Dual Darlington Transistor Module 100 Amperes/125 Volts Description Powerex Fast Switching Dual Darlington


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    KD221A10 Amperes/125 01AC-Ã KD221A10 transistor d 2689 kd221a1 d 2689 k0221 TRANSISTOR 2688 2689* transistor powerex kd22 PDF

    transistor kt 925

    Abstract: 2SC4365 2SC4072
    Contextual Info: SAflYO VERY HIGH-FREQUENCY TRANSISTOR SERIES ill Use * * * * * Features $ * # Wide-band amplifiers UHF, VHF TV tuners CATV converters RF modulators Dual TR for diff. amp High power gain Small noise figure High cutoff frequency ( ) ¡Marking on MCP, CP, PCP. For PNP, (-)sign is omitted.


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    250mm racteristics/Ta-25 MT930617TR transistor kt 925 2SC4365 2SC4072 PDF

    Halbleiterbauelemente DDR

    Abstract: BEL 639 transistor Sowjetische Halbleiter-Bauelemente KBC111 k4213 Germanium Transistor katalog radio fernsehen elektronik elektronik DDR KT904 KT372
    Contextual Info: K a ta lo g sowjetischer H albleiterbauelem ente Si« linden im K a t a lo g t e il : Der hiermit unseren Lesern vorgelegte Katalog sowjetischer Transistoren, Dioden und integrierter Schaltkreise ist das Resultat enger Zusammen­ arbeit zwischen dem VEB Elektronikhandel Berlin und der Redaktion der


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    KT 819 transistor

    Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
    Contextual Info: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e


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    transistor wm

    Abstract: smd transistor marking 1 da
    Contextual Info: !" PRELIMINARY DATASHEET WS1213 Power Amplifier Module for J-CDMA 887-925MHz DATASHEET (DEVICE : WS1213, 4x4 JAPAN CDMA PAM) Issued Date : December 9 , 2004 S. W. Paek Director, Module Group 1 Preliminary Information WM-0410-02 !" PRODUCT DESCRIPTION WS1213


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    WS1213 887-925MHz) WS1213, WM-0410-02 887-925MHz transistor wm smd transistor marking 1 da PDF

    IL02

    Abstract: IL-02 IGBT G 1010 P 600 K 800
    Contextual Info: VOMERE* ID226075 Powerex, Inc., Hillls Street, Youngwaod, Pennsylvania 15697 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, B P107,72003 Le Mans, France (43) 41.14.14 Dual IGBTMOD POWGf Modulo - 75 Amperes/600 Volts Description O U TLIN E DRAWING


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    ID226075 BP107 Amperes/600 75Amperes/600Volts IL02 IL-02 IGBT G 1010 P 600 K 800 PDF

    SMD TRANSISTOR MARKING 6C

    Abstract: SMD TRANSISTOR MARKING code 6c ACPM7822-TR1 acpm 7822 i 7822 SMD TRANSISTOR MARKING 5c transistor 7822
    Contextual Info: ACPM-7822 JCDMA 4x4 Power Amplifier Module 898-925MHz Data Sheet Description Features The ACPM-7822 is a fully matched 10-pin surface mount module developed for JCDMA. This power amplifier module operates in the 898-925MHz bandwidth. The ACPM-7822 meets stringent CDMA linearity requirements


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    ACPM-7822 898-925MHz) ACPM-7822 10-pin 898-925MHz 28dBm 50ohm AV02-1777EN SMD TRANSISTOR MARKING 6C SMD TRANSISTOR MARKING code 6c ACPM7822-TR1 acpm 7822 i 7822 SMD TRANSISTOR MARKING 5c transistor 7822 PDF

    transistor B1202

    Abstract: 2SD1802 b1202 t 2SB1202S
    Contextual Info: Ordering number : EN2113E 2SB1202/2SD1802 Bipolar Transistor http://onsemi.com – 50V, (–)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Applicaitons • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features • • • • Large current capacitance and wide ASO


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    EN2113E 2SB1202/2SD1802 2SB1202/2SD1802-used 2SB1202 transistor B1202 2SD1802 b1202 t 2SB1202S PDF

    2sb1202

    Contextual Info: Ordering number : EN2113E 2SB1202/2SD1802 Bipolar Transistor http://onsemi.com – 50V, (–)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Applicaitons • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features • • • • Large current capacitance and wide ASO


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    EN2113E 2SB1202/2SD1802 2SB1202/2SD1802-used 2SB1202 2sb1202 PDF

    2n1150

    Abstract: 2N1152 ir 0948 2N1151 2N1149 transistor kt 925 2N1153 2NM50
    Contextual Info: TYPES 2N1149 THRU 2N1153 N-P-N GROWN-JUNCTION TRANSISTORS B U L L E T I N N O . D L - S 6 9 2 2 3 7 , D E C E M B E R 1 9 6 1 - R E V I S E D A P R I L 1969 Oval Welded Package nw ch anical d a ta The transistor is in an oval welded package with glass-to-metal hermetic seal between case and leads.


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    2N1149 2N1153 2n1150 2N1152 ir 0948 2N1151 transistor kt 925 2NM50 PDF

    transistor kt 925

    Abstract: 2SC3537 NEM092
    Contextual Info: CLASS C, 900 MHz _ ’ 28 VOLT POWER TRANSISTOR NEM094081B-28 n e m o 96o s ib -28 NEM096081B-28 OUTPUT POWER AND EFFICIENCY vs. INPUT POWER FEATURES • HIGH POWER • HIGH GAIN • TITANIUM/PLATINUM/GOLD METALLIZATION FOR HIGH RELIABILITY . o p* 3 • SUPERIOR RF PERFORMANCE


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    NEM094081B-28 NEM096081B-28 03-j1 NEM092081 NEM094081 NEM096081 TEA-561 b427SBS transistor kt 925 2SC3537 NEM092 PDF

    HPT 370

    Abstract: abe 741 transistor HPR25 ERICSSON BML ptc rm5
    Contextual Info: April 1997 PBL 3898/M Metering Subscriber Line Interface Circuit Description Key Features PBL 3898/M is an analog Metering Subscriber Line Interface Circuit SLIC , which is fabricated in a 75 V bipolar, monolithic process. The programmable, constant current feed circuit incorporates a switch mode


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    3898/M S-164 HPT 370 abe 741 transistor HPR25 ERICSSON BML ptc rm5 PDF

    LA5601

    Contextual Info: Ordering number:ENN3222A Monolithic Linear IC LA5601 Low Saturation Regulator with Reset Overview Package Dimensions The LA5601 is a voltage regulator with a low-voltage detector and reset controller for use in microprocessor-based systems. It generates a reset signal for low power supply


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    ENN3222A LA5601 LA5601 3098B-DIP10S LA5601] 51min 250mA PDF

    OX36D-S-MR-R

    Abstract: dox5 18M08 transistor z7m st z7m Bowei Integrated Circuits oxln50d TXM11 tt 2246 transistor K117
    Contextual Info: ABOWEI n r r y /^ B i i ij Products BOWEI IN TEG RA TED C IR C U IT S C O .,LTD 2 0 0 7 .5 A bow ei BOWEI is one ofthe leading RF/microwave solution providers in China. With more than twenty years extensive experience, BOWEI has been engineering and manufacturing


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    12000-square-meter IS09000-2000, Min15 MXF3200 MXF3200A 12WCMXF3200) 6WCMXF3200A) OX36D-S-MR-R dox5 18M08 transistor z7m st z7m Bowei Integrated Circuits oxln50d TXM11 tt 2246 transistor K117 PDF

    smd transistor g28

    Abstract: transistor SMD g28
    Contextual Info: ACPM-5008-TR1 UMTS Band8 880-915MHz 3x3mm Power Amplifier Module Data Sheet Description Features The ACPM-5008-TR1 is a fully matched 10-pin surface mount module developed to support multimode applications including UMTS Band8. The ACPM-5008-TR1 meets stringent linearity requirements up to 28.5dBm output


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    ACPM-5008-TR1 880-915MHz) ACPM-5008-TR1 10-pin 50ohm AV02-2480EN smd transistor g28 transistor SMD g28 PDF

    Contextual Info: ACPM-5008-TR1 UMTS Band8 880-915MHz 3x3mm Power Amplifier Module Data Sheet Description Features The ACPM-5008-TR1 is a fully matched 10-pin surface mount module developed to support multimode applications including UMTS Band8. The ACPM-5008-TR1 meets stringent linearity requirements up to 28.5dBm output


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    ACPM-5008-TR1 880-915MHz) ACPM-5008-TR1 10-pin 50ohm AV02-2480EN PDF

    smd transistor g28

    Abstract: smd marking CODE G28 transistor SMD g28 TRANSISTOR SMD MARKING CODE G15 A5008 SMD Transistor g15 smd code G28 GPS 100 GPS Antenna AVAGO PA LTE 71-672
    Contextual Info: ACPM-5008-TR1 UMTS Band8 880-915MHz 3x3mm Power Amplifier Module Data Sheet Description Features The ACPM-5008-TR1 is a fully matched 10-pin surface mount module developed to support multimode applications including UMTS Band8. The ACPM-5008-TR1 meets stringent linearity requirements up to 28.5dBm output


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    ACPM-5008-TR1 880-915MHz) ACPM-5008-TR1 10-pin 50ohm AV02-2480EN smd transistor g28 smd marking CODE G28 transistor SMD g28 TRANSISTOR SMD MARKING CODE G15 A5008 SMD Transistor g15 smd code G28 GPS 100 GPS Antenna AVAGO PA LTE 71-672 PDF

    smd transistor g28

    Abstract: transistor SMD g28 ACPM5 smd marking CODE G28 AVAGO PA LTE smd code G28 smd marking g28
    Contextual Info: ACPM-5008-TR1 UMTS Band8 880-915MHz 3x3mm Power Amplifier Module Data Sheet Description Features The ACPM-5008-TR1 is a fully matched 10-pin surface mount module developed to support multimode applications including UMTS Band8. The ACPM-5008-TR1 meets stringent linearity requirements up to 28.5dBm output


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    ACPM-5008-TR1 880-915MHz) ACPM-5008-TR1 10-pin 50ohm AV02-2480EN smd transistor g28 transistor SMD g28 ACPM5 smd marking CODE G28 AVAGO PA LTE smd code G28 smd marking g28 PDF

    smd transistor g28

    Abstract: smd marking CODE G28 Avago 5008 SMD Transistor g15 TRANSISTOR SMD MARKING CODE TX AVAGO PA LTE smd code G28 TRANSISTOR SMD MARKING CODE G15 ACPM-5008
    Contextual Info: ACPM-5008-TR1 UMTS Band8 880-915MHz 3x3mm Power Amplifier Module Data Sheet Description Features The ACPM-5008-TR1 is a fully matched 10-pin surface mount module developed to support multimode applications including UMTS Band8. The ACPM-5008-TR1 meets stringent linearity requirements up to 28.5dBm output


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    ACPM-5008-TR1 880-915MHz) ACPM-5008-TR1 10-pin 50ohm AV02-2480EN smd transistor g28 smd marking CODE G28 Avago 5008 SMD Transistor g15 TRANSISTOR SMD MARKING CODE TX AVAGO PA LTE smd code G28 TRANSISTOR SMD MARKING CODE G15 ACPM-5008 PDF

    transistor TT 2146

    Abstract: equivalent for transistor tt 2146 Power MOSFET TT 2146 equivalent of transistor tt 2146 transistor motorola 351 mosfet TT 2146 motorola MOSFET 935 transistor d 965 al 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM MRF186
    Contextual Info: MOTOROLA O rder this docum ent by M RF186/D SEMICONDUCTOR TECHNICAL DATA Product Is Not Recom m ended for New Design. The next generation of higher perform ance products are in developm ent. Visit our online Selector Guides http://m ot-sps.com /rf/sg/sg.htm l for scheduled introduction dates.


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    MRF186/D MRF186/D transistor TT 2146 equivalent for transistor tt 2146 Power MOSFET TT 2146 equivalent of transistor tt 2146 transistor motorola 351 mosfet TT 2146 motorola MOSFET 935 transistor d 965 al 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM MRF186 PDF

    2SD 4206

    Abstract: str 5707 ky 201 thyristor scr ky 202 2SD 4206 npn gi 9444 diode TRANSISTOR SMD 9014 2SD 5703 STR 6757 TRANSISTOR SMD DK QC
    Contextual Info: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = Revision, see detail specification F = Active pull-down device (BiMOS only) -FP = Factory programmed -LC = Radial lead form LT = Tape and reel (package LH only)


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    MS-001, MS-010, MS-011) MS-010) MS-018) AMS-127B 2SD 4206 str 5707 ky 201 thyristor scr ky 202 2SD 4206 npn gi 9444 diode TRANSISTOR SMD 9014 2SD 5703 STR 6757 TRANSISTOR SMD DK QC PDF

    TRANSISTOR SMD 613

    Abstract: TRANSISTOR SMD DK QC transistor SMD DK -RN Sanken Schottky Diode Mi 15 spx 3955 SANKEN power supply diode zener smd sg 64 transistor SMD DK qs 301 miniature smd transistor KY smd transistor
    Contextual Info: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = Revision, see detail specification F = Active pull-down device (BiMOS only) -FP = Factory programmed -LC = Radial lead form LT = Tape and reel (package LH only)


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    MS-001, MS-010, MS-011) MS-010) MS-018) AMS-127B TRANSISTOR SMD 613 TRANSISTOR SMD DK QC transistor SMD DK -RN Sanken Schottky Diode Mi 15 spx 3955 SANKEN power supply diode zener smd sg 64 transistor SMD DK qs 301 miniature smd transistor KY smd transistor PDF