TRANSISTOR KTC3199 Search Results

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

KIA78*pI

Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC

khb*9D5N20P

Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

Contextual Info: SEMICONDUCTOR KTC3199 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION SWITCHING APPLICATION. FEATURES 1996. 5. 30 Revision No : 1 1/3

Contextual Info: SEMICONDUCTOR KTA1267 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION SWITCHING APPLICATION. FEATURES ϒ⁄Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・Low Noise : NF=1dB(Typ.), 10dB(Max.). ・Complementary to KTC3199.

transistor KTC3199

Abstract: KTA1267 KTC3199 ktc3199 y
Contextual Info: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTC3199 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High DC Current Gain : hFE=70~700. • Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.).

KTA1267L

Abstract: KTC3199L
Contextual Info: SEMICONDUCTOR KTA1267L TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES B ᴌExcellent hFE Linearity A : hFE 0.1mA /hFE(2mA)=0.95(Typ.). O F ᴌLow Noise : NF=0.2dB(Typ.), 3dB(Max.). ᴌComplementary to KTC3199L. H G

KTA1267L

Abstract: KTC3199L
Contextual Info: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTA1267L EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES • Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • Low Noise : NF=0.2dB(Typ.), 3dB(Max.). • Complementary to KTC3199L.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors KTC3199 TO-92S TRANSISTOR NPN FEATURES Power dissipation PCM: 1. EMITTER 400 2. COLLECTOR mW (Tamb=25℃) Collector current 150 mA ICM: Collector-base voltage 50 V

transistor wu1

Abstract: transistor wu1 5
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTA1267L EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES • Excellent hFF Linearity : hFE 0.1mA /W2rnA)=0.95(Typ.). • Low Noise : NF=0.2dB(Typ.), 3dB(Max.). • Complementary to KTC3199L. MAXIMUM RATINGS (Ta=25°C)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO – 92S KTA1267 TRANSISTOR PNP 1. EMITTER FEATURES z Excellent hFE Linearity z Complementary to KTC3199 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

KTA1267

Abstract: KTC3199 KTA1267 GR
Contextual Info: SEMICONDUCTOR KTA1267 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION SWITCHING APPLICATION. B FEATURES A Excellent hFE Linearity O F : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ᴌLow Noise : NF=1dB(Typ.), 10dB(Max.). H M G ᴌComplementary to KTC3199.

KTA1267L

Abstract: KTC3199L hFE transistor 200
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTC3199L EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AUDIO AMPLIFIER APPLICATION. FEATURES • High DC Current Gain : hFE=70~700. • Excellent h FE Linearity : hFE 0.1mA /W2rnA)=0.95(Typ.). • Low Noise : NF=0.2dB(Typ.), 3dB(Max.).

KTA1267L

Abstract: KTC3199L
Contextual Info: SEMICONDUCTOR KTC3199L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AUDIO AMPLIFIER APPLICATION. FEATURES B ᴌHigh DC Current Gain : hFE=70ᴕ700. A ᴌExcellent hFE Linearity O F : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ᴌLow Noise : NF=0.2dB(Typ.), 3dB(Max.).

KTA1267

Contextual Info: SEMICONDUCTOR KTA1267 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION SWITCHING APPLICATION. B FEATURES A ϒ⁄Excellent hFE Linearity O F : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・Low Noise : NF=1dB(Typ.), 10dB(Max.). H M G ・Complementary to KTC3199.

KTC3199

Abstract: KTA1267 ktC3199 transistor
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTC3199 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High DC Current Gain : hFE=70~700. • Excellent I lfe Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • Low Noise : NF=ldB(Typ.), 10dB(Max.).

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO – 92S KTC3199 TRANSISTOR NPN 1. EMITTER FEATURES z High DC Current Gain z Complementary to KTA1267 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: SEMICONDUCTOR KTC3199L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AUDIO AMPLIFIER APPLICATION. FEATURES B ᴌHigh DC Current Gain : hFE=70ᴕ700. A ᴌExcellent hFE Linearity O F : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ᴌLow Noise : NF=0.2dB(Typ.), 3dB(Max.).

transistor KTC3199

Abstract: KTA1267 KTC3199 KTC3199 GR
Contextual Info: SEMICONDUCTOR KTC3199 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION SWITCHING APPLICATION. B FEATURES A ᴌHigh DC Current Gain : hFE=70~700. O F ᴌExcellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). H M G ᴌLow Noise : NF=1dB(Typ.), 10dB(Max.).

KTC3199 GR

Contextual Info: SEMICONDUCTOR KTC3199 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION SWITCHING APPLICATION. B FEATURES A ・High DC Current Gain : hFE=70~700. O F ・Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). H M G ・Low Noise : NF=1dB(Typ.), 10dB(Max.).

KTA1267L

Abstract: KTC3199L
Contextual Info: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTC3199L EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AUDIO AMPLIFIER APPLICATION. FEATURES • High DC Current Gain : 1i f e = 70 ~ 700. • Excellent Iif e Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • Low Noise : NF=0.2dB(Typ.), 3dB(Max.).

KTC3199 GR

Abstract: KTC3199 transistor KTC3199 ktC3199 transistor ktc3199 y ktc31 npn hfe 120-240
Contextual Info: KTC3199 KTC3199 TO-92S TRANSISTOR NPN FEATURES Power dissipation PCM: 1. EMITTER 400 2. COLLECTOR mW (Tamb=25℃) Collector current ICM: 150 mA Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range 3. BASE 123 TJ, Tstg: -55℃ to +150℃

KTA1267

Abstract: KTC3199
Contextual Info: SEMICONDUCTOR TECHNICAL D A TA KOREA ELECTRONICS CO.,LTD. KTA1267 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION SWITCHING APPLICATION. FEATURES • Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • Low Noise : NF=ldB(Typ.), 10dB(Max.).