TRANSISTOR LT 186 Search Results

F527S

Abstract: 2sc55 marking WMM 2SC5488 2SC4853 2SC4931 2SC5277 2SC5374 2SC5489 2SC553
Contextual Info: SAfiYO NEW PRODUCT VERY HIGH-FREQUENCY TRANSISTOR SERIES lt>2 Newly developed SANYO very high-frequency tra n sis to rs can be used fo r various ap p licatio n s such as fo r communication equipment and measuring equipment. They are superior when used with low voltage drive.

Contextual Info: Transistors Medium Power Transistor -32V, - 0.5A 2SA1036K/2SA1577/2SA854S •F e a tu re s IcMax. = - 5 0 0 m A 2) • E x t e r n a l d im e n s io n s (U nits: m m ) L a rg e lc. 2SA1577 2SA1036K L o w VcE(sat). O p tim a l f o r lo w - v o lt'¿±0.1

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSC2223 HIGH FREQUENCY AMPLIFIER Vary small size to assure good space factor in hybrid 1C applications • »T= 600MHz Typ. lE= -1mA • Cob=1pF Typ (Vcs=6V) • NF=3dB Typ (f=100MHz) SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

Contextual Info: I— I P E Xe POWER OPERATIONAL AMPLIFIERS PA08 • PA08A APEX MICROTECHNOLOGY CORPORATION « TUCSON, ARIZONA « APPLICATIONS HOTLINE 8 0 0 421-18651 FEATURES • • • • • WIDE SUPPLY RANGE — ±15V to ±150V PROGRAMMABLE OUTPUT CURRENT LIMIT HIGH OUTPUT CURRENT — Up to ± 150mA

AC 187 npn transistor TO 1

Abstract: Transistor AC 188 transistor lt 186 Transistor AC 187 2SC3906K
Contextual Info: 2SC3906K 2SC4102 Transistor, NPN Features Dimensions Units : mm available In SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) package package marking: 2SC3906K and 2SC4102; T * . where ★ is hFE code high breakdown voltage, Vceo = 120 V complementary pair with 2SA1514K

transistor lt 186

Abstract: NPN Transistor 10A 400V KSC2751 400V 10A NPN transistor
Contextual Info: KSC2751 NPN EPITAXIAL SILICON TRANSISTOR HIGH SPEED, HIGH CURRENT SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit Collector- Base Voltage VcBO 500 V Collector- Emitter Voltage VcEO 4 00 V Emitter- Base Voltage V ebo 7 V 15 A Symbol

transistor lt 186

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSC2751 HIGH SPEED, HIGH CURRENT SWITCHING INDUSTRIAL USE T O -3P ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage C ollector Current DC 'C o lle c to r Current (Pulse)

Contextual Info: NEC SILICON TRANSISTOR ELECTRON DEVICE 2SA1330 HIGH VOLTAGE AMPLIFIER AND SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FE A TU R ES • High Voltage: V c e o = —200 V • High DC C u rrent Gain: hpE = 90 to 450 • C om plem entary to 2SC3360 A B S O LU T E M A X IM U M R A T IN G S

2N3303

Abstract: T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175
Contextual Info: Semiconductor Components Data Book 4 Transistors C o p y rig h t 1971 by T exas In s tru m e n ts L im ited . A ll R ig h ts R eserv ed . P rin te d in th e U n ite d K ingdom . T his b o o k , o r p arts th e re o f, m ay n o t be rep ro d u ce d in any

Contextual Info: 8. Handling Techniques of M IN I M O L D Device It is necessary to take fu ll cares in using the M IN I M O L D device in o rde r to m aintain its high q u a lity and re li­ a b ility , in same manner as in the case o f o rd in a ry transistor. The fo llo w in g are environm ental c o n d itio n s encountered

Contextual Info: F A IR C H IL D s e m ic o n d u c t o r w w w .fa irc h ild s e m i.c o m tm RC4391 Inverting and Step-Down Switching Regulator Features • High performance — High switch current — 375 mA High efficiency — 70% typically • Low battery detection capability

philips ET-E 60

Contextual Info: N AMER P H I L I P S / D I S C R E T E bTE D • bb 53 T 3 1 □D3D4TD bSS H A P X Philips Semiconductors Product Specification Pow erM OS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in

6DI50M-120

Abstract: P930 T151 T460 T760 b426 mtki B-426 GPR circuit schematic PC1860
Contextual Info: 6 D I5 0 M -1 2 0 5 0 a '<n — POWER TRANSISTOR MODULE W ffi-fk Features • High Arm Short Circuit Capability • High DC Current Gain • 7U— — KrtflS Including Freewheeling Diode • f l & i I n s u l a t e d Type Applications — 9 General Purpose

mcp 9700E

Abstract: mcp 9700E TO mcp9701e Tip 26C transistor DS01001 MCP9701-E 9700E mcp9700a 9700A MCP9700E
Contextual Info: MCP9700/9700A MCP9701/9701A Low-Power Linear Active Thermistor ICs Features Description • Tiny Analog Temperature Sensor • Available Packages: SC-70-5, TO-92-3 • Wide Temperature Measurement Range: - -40°C to +125°C • Accuracy: - ±2°C max. , 0°C to +70°C (MCP9700A/9701A)

a2hb transistor

Abstract: 1000A diode Transistor AC 188 A2HB 20/a2hb transistor
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM 1000H A-2HB HIGH POWER SWITCHING USE INSULATED TYPE | QM1000HA-2HB • Ic Collector current. • V C EX Collector-emitter voltage. • hFE DC current gain. 10 00A 1000V

TFK 404

Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
Contextual Info: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317

TA 7122 AP

Abstract: MB7122E MB7122 MB7121E TP 7122 MB7121 AC 188 pnp transistor TO 1
Contextual Info: FU JITSU MB7121E/H MB7122E/H/Y MB7121L MB7122L P R O G R A M M A B LE S C H O T T K Y 4 0 9 6 -B IT R EA D ONLY M EM ORY 'D e c e m b e r 1987 E d itio n 3 .0 SCHOTTKEY 4096-RT DEAP PROM 1024 WORDS X 4 BITS The Fujitsu MB7121 and MB7122 are high speed Schottky T T L electrically

ap 4466

Abstract: p 4466
Contextual Info: F SAMYO i N O .2 0 8 0 C L A A A 6 5 ^ 4 4 6 6 M o n o l i t h i c L i n e a r IC BTL-OCL 1 2 W A F P o w e r Amp f o r C a r S t e r e o Us e 'X v., Features • B a s i c a l l y p in - c o m p a t i b l e w i t h th e L A ^ ^ 6 5 N , 4 M6 1 N Ho:ÿi f v e r <§|lSi>id ei ¿ la n g e s m u st

4461N

Abstract: ic 4466 LA4465 transistor bc 132
Contextual Info: F SAMYO i N O .2 0 8 0 C L A A A 6 5 ^ 4 4 6 6 M o n o l i t h i c L i n e a r IC BTL-OCL 1 2 W A F P o w e r Amp f o r C a r S t e r e o Us e 'X v., Features • B a s i c a l l y p in - c o m p a t i b l e w i t h th e L A ^ ^ 6 5 N , 4 M6 1 N Ho:ÿi f v e r <§|lSi>id ei ¿ la n g e s m u st

8U406

Abstract: BC317 Philips philips e3 407F flyback transformer philips BU406F BU407F Q030 407F Transistors
Contextual Info: PHILIPS INT ERNATIONAL MSE D E3 7 3tlüö2fci OOaüôB'ï ö S P H I N BU406F BU407F T - 3 ß - 0 7 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a S O T 186 envelope w ith electrically isolated mounting base, intended for use in converters, inverters, switching regulators

tfk 186

Abstract: BF115 BF 183 transistor BF 182 transistor TFK S 186 BF 186 tfk 145 transistor bf 184 BF 184 NPN transistor BF 184 transistor
Contextual Info: V BF 115 Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: Allgem ein bis 100 MHz Applications: General up to 100 MHz Abmessungen in mm Dimensions in mm 2,54 *4,8 »5,7 «0,5 -:— f - — Í t •*- 13-►

transistor DA3 309

Abstract: SVPWM TMS320F240 svpwm c code 3 phase inverter T-CON Schematic svpwm inverter schematic schematic diagram UPS inverter schematic diagram UPS inverter three phase 220v DC MOTOR pwm TMS320F2406
Contextual Info: Three phase current measurements using a single line resistor on the TMS320F240 Literature Number: BPRA077 Texas Instruments Europe May 1998 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest

schematic diagram UPS inverter three phase

Abstract: 3 phase inverter schematic diagram three phase on line ups circuit diagrams schematic diagram UPS inverter phase transistor DA3 309 single phase igbt based inverter 200 amps circuit schematic diagram UPS inverter svpwm inverter schematic Marelli 3 phase UPS block diagram
Contextual Info: Three phase current measurements using a single line resistor on the TMS320F240 Literature Number: BPRA077 Texas Instruments Europe May 1998 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest

transistor DA3 309

Abstract: BPRA077 svpwm inverter schematic T-CON Schematic transistor DA1 309 svpwm c code 3 phase inverter F240 IRGPC40F TLE2141 TMS320F240
Contextual Info: Three phase current measurements using a single line resistor on the TMS320F240 Literature Number: BPRA077 Texas Instruments Europe May 1998 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the