TRANSISTOR M F20 Search Results

transistor 3569

Abstract: 3569 pN3569
Contextual Info: M NPN SILICON PLANAR EPITAXIAL TRANSISTOR M IC R O EI_EC;-rRCDIXIIC3S GENERAL DESCRIPTION : The PN 3569 is an NPN silicon planar epitaxial transistor designed for amplifier and swit­ ching applications for collector current up to 500mA. MECHANICAL OUTLINE

Contextual Info: M PN 3569 NPN SILICON PLANAR EPITAXIAL TRANSISTOR M IC R O EI_EC;-rRCDIXIIC3S GENERAL DESCRIPTION : The PN 3569 is an NPN silicon planar epitaxial transistor designed for amplifier and swit­ ching applications for collector current up to 500mA. MECHANICAL OUTLINE

sg transistor

Abstract: TGF2021-08-SG rf transistor 320C TGF2021 4ghz transistor n "rf transistor"
Contextual Info: TrìQuint SEMICONDUCTOR TGF2021-08-SG 7 W, 12V, 20MHz - 4 GHz, pHEMT Wideband RF Transistor Product Description The T riQ uint TG F2021-08-SG is a discrete 7 W a tt P1dB Transistor operating at 12 volts. The device produces 7W P1dB RF output power at 4GHz. Both defense and com m ercial m arkets can take advantage

2SJ328

Abstract: 2SJ328-Z MEI-1202 TEA-1035
Contextual Info: DATA SHEET NEC P-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR iB— r 2SJ328, 2SJ328-Z SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SJ328 is P-channel MOS Field Effect Transistor designed in m illim e te rs for solenoid, m otor and lamp driver.

pdmi

Abstract: 2SK2838 2SK283
Contextual Info: TOSHIBA 2SK2838 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2838 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in m m TO-220FL CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE 10.3MAX. APPLICATIONS

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

BUK437-450B

Abstract: T-39-15
Contextual Info: N AMER 5SE PHILIPS/DISCRETE D •I fa b S B T a i 0050B 1S M PowerMOS transistor BUK437-450B T -3 ^ -1 5 * GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

F1220M

Contextual Info: TSDF1220/TSDF1220R/TSDF1220W/TSDF1220RW Y Vishay Telefunken Silicon NPN Planar RF Transistor E lectrostatic sensitive device. O bserve precautions fo r handling. ^ M Applications For low noise applications such as pream plifiers, m ix­ ers and oscillators in analog and digital T V -s y s te m s

724 motorola NPN Transistor

Abstract: motorola transistor r 724 MRF2010M motorola rf Power Transistor transistor amplifier 3 ghz 10 watts MRF201 MOTOROLA POWER TRANSISTOR 14 DS5802 Motorola 406 MRF2010
Contextual Info: Order this document by MRF2010M/D M MOTOROLA MRF2010M SEMICONDUCTORS P.O. BOX 20912 • PHOENIX, ARIZONA 85036 The RF Line 10W M ICRO W AVE POWER TRANSISTO R NPN SILICON MICROWAVE POWER TRANSISTOR . . . designed for Class B and C comm on base broadband amplifier

DIODE SJ 98

Abstract: BUK437-450B
Contextual Info: N AMER P H I L I P S / D I S C R E T E 5SE D •I fabSBTai 0050B1S M PowerMOS transistor B U K 437-450B T -3^ -15* GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

IC 4093 pin configuration

Abstract: BRY 56 B IC 4093 MARKING 30 5Y SO2894 4392 4392 a ic BCV27 BFR30 BFR31
Contextual Info: micropackaged devices m icroboitiers ^ général purpose and switching transistor selector guide THOMSON-CSF guide de sélection-transistors de com m utation et usage général Case TO'236 •c 0,5 . 0,8A 0,1 . 0,2A Type NPN PNP NPN PNP BCX 20 BCX 18 SO 2221

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

transistor 21Y

Abstract: 2N1556 2N1556A TRANSISTOR 3052 2N1553A 2N1554A 2N1555A 2N1555 J717 2N1553
Contextual Info: MIfc-a-Î9500/3 31ACEL 8 February 1971 SUp ERSE d M ; MIL-S-19500/331 EL) 5 May 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP. GERMANIUM, POWER TYPES 2N1553A THROUGH 2N1556A I. SCOPE 1.1 Scope.- This specification covers the detail requirements

MMBF5486LT1

Abstract: 318C8 marking gfg 6f
Contextual Info: MOTOROLA Order this document by MMBF5486LT1/D SEMICONDUCTOR TECHNICAL DATA JFET Transistor N-Channel 2 SOURCE MMBF5486LT1 M o to ro la P re fe rre d D e vic e MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Forward Gate Current Symbol

DBT134

Contextual Info: MOTOROLA Order this document by MRF20030R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line M RF20030R RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequen­ cies from 1800 to 2000 MHz. The high gain and broadband performance of this

Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 - MARCH 94_ FEATURES * 350 V o lt V CE0 * Gain of 15 at lc=100mA E E-Line TQ92 Compatible ABSOLUTE MAXIMUM RATINGS. P A R A M ETER SYM BO L Collector-Base Voltage Continuous Collector Current

3SK126

Contextual Info: TOSHIBA 3SK126 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3 S K 1 26 Unit in mm TV TUNER, VHF RF AM PLIFIER APPLICATIONS TV TUNER VHF M IXER APPLICATIONS • • • + 0.2 Superior Cross Modulation Performance. Low Reverse Transfer Capacitance : Crss = 0.03pF Typ.

RL28-55

Abstract: C110 H160 transistor C110
Contextual Info: RL28-55/82b/105/. Reflection light beam switch with polarisation filter RL28-55/82b/105/. with 5-pin, M12 x 1 plastic connector U K Detection range up to 16 m K PNP and NPN transistor outputs K Clearly visible LEDs for Power ON, switching state and stability control

A1S sh

Contextual Info: T O SH IB A 3SK126 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3 S K 1 26 U nit in mm TV TUNER, VHF RF AM PLIFIER APPLICATIONS TV TUNER VHF M IXER APPLICATIONS + 0.2 2.9 -0.3 - H Superior Cross Modulation Performance. Low Reverse Transfer Capacitance : Crss = 0.03pF Typ.

SL3145CMP

Contextual Info: GEC PLESSEY w . S r M I O ADVANCE INFORMATION N D li C T O K S SL3145 1.6GHz NPN TRANSISTOR ARRAYS The SL3145 ¡s a monolithic array of five high frequency low current NPN transistors. The SL3145 consists of 3 isolated transistors and adifferential pair in a 14 lead SO package The

2N3823 equivalent

Abstract: 2N3823 transistor 2N3823
Contextual Info: 2N3S23 N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR f*r ' * 1 ▼T,”‘ '* V ^ •.,v . M i " : ' V j .*< V - v ’ ' * V r * \¿ ; ’?T * r * ' *-•- '• i, ':* ' u f T • *'•* «íí • ” ’ V , 2* * ‘ r " tì'1 « * CASE TO-72 THE 2N3825 IS AN N-CHANNEL JFET DESIGNED

M 015 j47

Abstract: Diode FAJ 32
Contextual Info: MOTOROLA Order this document by MRF20060R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line RF Pow er Bipolar Transistors M R F20060R M RF20060RS The M R F 20 06 0R and M R F 20 06 0R S are desig ned fo r b roadband com m e rcial and industrial ap plicatio ns at fre q u e n cie s from 1800 to 2 0 00 M Hz. T he high gain,