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    TRANSISTOR M21 Search Results

    TRANSISTOR M21 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR M21 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet µPA2815T1S P-channel MOS FIELD EFFECT TRANSISTOR R07DS0777EJ0100 Rev.1.00 Jun 01, 2012 Description The µPA2815T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features


    Original     		PDF PA2815T1S R07DS0777EJ0100 PA2815T1S PA2815T1S-E2-AT

    p-channel m21

    Abstract: No abstract text available
    Text: Data Sheet PA2815T1S P-channel MOS FIELD EFFECT TRANSISTOR R07DS0777EJ0100 Rev.1.00 Jun 01, 2012 Description The μPA2815T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features


    Original     		PDF PA2815T1S R07DS0777EJ0100 PA2815T1S PA2815T1S-E2-AT p-channel m21

    MG1007-42

    Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
    Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are


    Original     		PDF MS4-009-13 MG1007-42 MG1020-M16 MSC1075M 1004mp MG1052-30

    transistor case To 106

    Abstract: 2DI100M-120 welding inverter 100A servo schematic Ib22 M210 inverter welding machine circuit M430 fuji servo drive
    Text: 2DI100M-120 100A FUJI POWER TRANSISTOR MODULE パワートランジスタモジュール POWER TRANSISTOR MODULE 外形寸法 : Outline Drawings 外形寸法: 特長 ：Features 特長： 短絡耐量が高い 短絡耐量が高い High Arm Short Circuit Capability


    Original     		PDF 2DI100M-120 E82988 transistor case To 106 2DI100M-120 welding inverter 100A servo schematic Ib22 M210 inverter welding machine circuit M430 fuji servo drive

    2DI150M-120

    Abstract: schematic welding machine inverter welding machine circuit dc servo drive schematic M210 transistor 2di150
    Text: 2DI150M-120 100A FUJI POWER TRANSISTOR MODULE パワートランジスタモジュール POWER TRANSISTOR MODULE 外形寸法 : Outline Drawings 外形寸法: 特長 ：Features 特長： 短絡耐量が高い 短絡耐量が高い High Arm Short Circuit Capability


    Original     		PDF 2DI150M-120 E82988 2DI150M-120 schematic welding machine inverter welding machine circuit dc servo drive schematic M210 transistor 2di150

    welding inverter 200A

    Abstract: 2DI200M-050 dc servo drive schematic transistor servo drive 200A inverter schematic welding machine M210 power transistor max 550 transistor 2DI200M
    Text: 2DI200M-050 200A FUJI POWER TRANSISTOR MODULE 外形寸法 : Outline Drawings 外形寸法: パワートランジスタモジュール POWER TRANSISTOR MODULE 特長 ：Features 特長： hFE が高い が高い High DC Current Gain 高速ｽｲｯﾁﾝｸﾞ


    Original     		PDF 2DI200M-050 600mA welding inverter 200A 2DI200M-050 dc servo drive schematic transistor servo drive 200A inverter schematic welding machine M210 power transistor max 550 transistor 2DI200M

    2DI150Z-100

    Abstract: 2DI-150-Z-100 M210 2di150
    Text: 2DI150Z-100 150A FUJI POWER TRANSISTOR MODULE パワートランジスタモジュール POWER TRANSISTOR MODULE 外形寸法 : Outline Drawings 外形寸法: 特長 ：Features 特長： 高耐圧 High Voltage 内蔵 Including Tree Wheeling Diode ﾌﾘｰﾎｲﾘﾝｸﾞﾀﾞｲｵｰﾄﾞ内蔵


    Original     		PDF 2DI150Z-100 2DI150Z-100 2DI-150-Z-100 M210 2di150

    2DI100Z-140

    Abstract: M210
    Text: 2DI100Z-140 100A FUJI POWER TRANSISTOR MODULE パワートランジスタモジュール POWER TRANSISTOR MODULE 外形寸法 : Outline Drawings 外形寸法: 特長 ：Features 特長： 高耐圧 High Voltage 内蔵 Including Tree Wheeling Diode ﾌﾘｰﾎｲﾘﾝｸﾞﾀﾞｲｵｰﾄﾞ内蔵


    Original     		PDF 2DI100Z-140 2DI100Z-140 M210

    2DI100Z-120

    Abstract: M210
    Text: 2DI100Z-120 100A FUJI POWER TRANSISTOR MODULE パワートランジスタモジュール POWER TRANSISTOR MODULE 外形寸法 : Outline Drawings 外形寸法: 特長 ：Features 特長： 高耐圧 High Voltage 内蔵 Including Tree Wheeling Diode ﾌﾘｰﾎｲﾘﾝｸﾞﾀﾞｲｵｰﾄﾞ内蔵


    Original     		PDF 2DI100Z-120 2DI100Z-120 M210

    2DI100Z-100

    Abstract: M210
    Text: 2DI100Z-100 100A FUJI POWER TRANSISTOR MODULE パワートランジスタモジュール POWER TRANSISTOR MODULE 外形寸法 : Outline Drawings 外形寸法: 特長 ：Features 特長： 高耐圧 High Voltage 内蔵 Including Tree Wheeling Diode ﾌﾘｰﾎｲﾘﾝｸﾞﾀﾞｲｵｰﾄﾞ内蔵


    Original     		PDF 2DI100Z-100 2DI100Z-100 M210

    2DI150Z-120

    Abstract: M210 2di150z120 2di150
    Text: 2DI150Z-120 150A FUJI POWER TRANSISTOR MODULE パワートランジスタモジュール POWER TRANSISTOR MODULE 外形寸法 : Outline Drawings 外形寸法: 特長 ：Features 特長： 高耐圧 High Voltage 内蔵 Including Tree Wheeling Diode ﾌﾘｰﾎｲﾘﾝｸﾞﾀﾞｲｵｰﾄﾞ内蔵


    Original     		PDF 2DI150Z-120 2DI150Z-120 M210 2di150z120 2di150

    2C2907AHV

    Abstract: m21 transistor
    Text: MOTOROW Order this dooument by 2C2W7AHVID SEMICONDUCTORTECHNICALDATA @ 2C2907AHV Chip PNP Silicon Smal14ignal Transistor .11 ~+ “~ [ . . designed for dc to VHF amplifier and generaburpose witching applications. Technaloglw Opl muon MMIMUM RATINGS Value symbol


    Original     		PDF 2C2907AHV Smal14ignal 2C2907AHVID 1PHX24101 m21 transistor

    2N3634 MOTOROLA

    Abstract: m21 transistor 2N3634 2N3637 transistor m21 MIL-19500 2N3634JTX 2N3635 2N3635JTX 2N3636
    Text: MOTOROU Orderth18 document by2N3WWD SEMICONDUCTOR TECHNICAL DATA o 2N3634JTX, 2N3635JTX, 2N3636JTX, 2N3637JTX, JTXV JTXV, JANS JTXV, JANS JTXV, JANS Processed per MIL+-19500/357 PNP Silicon SmallSignal o General-Purpose Transistor Ic Collector Current,Maimurn


    Original     		PDF Orderth18 2N3634JTX, 2N3635JTX, 2N3636JTX, 2N3637JTX, CHARACTERlST19 2N3634, 2N3635 2N3636, 2N3637 2N3634 MOTOROLA m21 transistor 2N3634 2N3637 transistor m21 MIL-19500 2N3634JTX 2N3635 2N3635JTX 2N3636

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet PA2815T1S P-channel MOSFET R07DS0777EJ0101 Rev.1.01 May 28, 2013 –30 V, –21 A, 11 mΩ Description The μPA2815T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment.


    Original     		PDF PA2815T1S R07DS0777EJ0101 PA2815T1S PA2815T1S-E2-AT

    6DI75MA-050

    Abstract: 2DI100MA-050 1di50 1di200 6DI30MA-050 TRANSISTOR N 1380 600 300 SC 2di150ma-050
    Text: /\°7 —7"VW 7 / Power Devices k • A 7 ~ h 7 > y X ^ i v i t — V Power Transistor Modules 600V'7^X ¡ lh F E / \ V - l'7 > v ; ^ iv . a - J l' 600 volts class high hFE power transistor modules m a Devi«» type VCBQ VCEQ Ic Cont, Amps. Pc hnsowisfc).


    OCR Scan     		PDF 2DI30M-050 2DI50M-050 2DI75M-050 2DI100M-050 2DI100MA-050 2DI150M-050 2DI150MA-050 2DI200M-050 1DI300M-050 1DI400M-050 6DI75MA-050 1di50 1di200 6DI30MA-050 TRANSISTOR N 1380 600 300 SC

    2DI75M-120

    Abstract: 1di200
    Text: ^ g jjjf /\°7 — x / W 7s / Power Devices • / v'9 —h 7 > y X ^ i y . i “ ^ Power Transistor Modules 1 2 0 0 V ? 7 * S h F E / '* 7 - h 7 > '> '^ 5 f ;E ' > ' a - ^ 1200 volts class high hFE power transistor modules m £ V cbo Device type 2DI50M-120


    OCR Scan     		PDF 2DI50M-120 2DI75M-120 2DI100M-120 2DI150M-120 1DI200M-120 1DI300M-120 T25C3 M2047 6DI15M-120 6DI30M-120 1di200

    Untitled

    Abstract: No abstract text available
    Text: BIPOLAR TRANSISTOR MODULES ' Ratings and Specifications jjfi 600 volts class high F ife — power transistor modules • Because this m o d u le has 10 tim e s or m o re th e con vention al DC cu rren t gain, set p ro p o rtio n a lly fo r each ele m en t


    OCR Scan     		PDF 2DI30M-050 6DI50M-050 6DI50MA 6DI75M-050 6DI75MA 6DI100M

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN 1627B _2SC3643 N PN Triple D iffused Planar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features . High reliability Adoption of HVP process . Fast speed. . High breakdown voltage.


    OCR Scan     		PDF 1627B 2SC3643 T03PB M217KI/3095KI/N22UKI 0D20337 002033a

    M615

    Abstract: 1DI300ZP-120 1DI400MP-120 1di200
    Text: BIPOLAR TRANSISTOR MODULES Ratings and Specifications 3 High-speed sw itching 1400 volts class pow er transistor modules • S u ite d f o r m o t o r c o n t ro l a p p li c a t io n s w i t h 575V AC in p u t. • P o w e r t r a n s i s to r s an d fre e w h e e ls are b u ilt in to on e package.


    OCR Scan     		PDF 2DI50Z-140 2DI75Z-140 2DI100Z-140 2DI150Z-140 1DI300Z-140 6DI10MS-050 6DI15S-050 6DI15MS-050 6DI20MS-050 M615 1DI300ZP-120 1DI400MP-120 1di200

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


    OCR Scan     		PDF 2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp

    3TE445

    Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
    Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group


    OCR Scan     		PDF FJJ141/A 2305D FJJ181/A 2305E/848 FJJ191/A FJL101/A CD2306D FJY101/A 2306E/832 CD2307/944 3TE445 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


    OCR Scan     		PDF 1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503

    2N5262

    Abstract: ssc sl 136 4 TA-7238 ia86 TRANSISTOR 2n5262 2n5262 rca CE010 TA2626 I3B9 RCA-2N5262
    Text: .File No. 313 Pow er T ra n sisto rs Solid State Division 2N5262 RCA-2N5262* is a silicon n-p-n, epitaxial planar transistor with characteristics which make it excep­ tionally desirable for high-speed, high-voltage, highcurrent switching applications. In addition, the 2N5262


    OCR Scan     		PDF 2N5262 RCA-2N5262* 2N5262 MIL-S-19500, RCA-2N5262 ssc sl 136 4 TA-7238 ia86 TRANSISTOR 2n5262 2n5262 rca CE010 TA2626 I3B9

    T-CON Schematic

    Abstract: 2DI150M-120 FAJWA 150A 3D M210 T151 B401 OWTR t460 transistor PC2000
    Text: 2 D I1 50M -120 150 a /v ° 7 - h '• Outline Drawings POWER TRANSISTOR MODULE • 4 # ^ : : Features • • • • fca#&iiiiA'i'iSj^ High Arm Short Circuit Capability hFE/^iftu High DC Current Gain 7 *)~ — KF3 Including Freewheeling Diode ifeiHffi Insulated Type


    OCR Scan     		PDF 50M-120 E82988 egTS30Â I95t/R89) T-CON Schematic 2DI150M-120 FAJWA 150A 3D M210 T151 B401 OWTR t460 transistor PC2000