TRANSISTOR M6 NPN Search Results

MOTOROLA mj300av120

Abstract: MJ300AV120 FLU1-60 max4283 equivalent of transistor D 2331 4221 motorola transistor
Contextual Info: 63.67254 M O T O R O L A SC XSTRS/R F lyiQYOROLA ST 89D 80000 D E | b3ki7254 DDflDODO Order this data sheet by MJ300AV120/D D | • SEMICONDUCTOR TECHNICAL DATA MJ300AV120 NPN Silico n Pow er Transistor Module Energy Management Series DU AL TR I-STA G E

MJ300

Abstract: mj300av100 equivalent of transistor D 2331 diode l 0607 ip rating 4221 motorola transistor diode l 0607 max4283 SC3662 MJ300A
Contextual Info: 6367254 MOTOROLA SC MOTOROLA Tb XSTRS/R F 9 6D 8 1 5 1 5 D 7 '3 3 ~ 3 £ Order this data sheet by MJ300AV100/D DE | ti317ES4 ODfllSlS 5 SEMICONDUCTOR TECHNICAL DATA MJ300 AV 100 NPN S ilic o n P o w e r T ra n s is to r M odule Energy M anagem ent Series

4221 motorola transistor

Abstract: MOTOROLA 4221 MJ200
Contextual Info: 6 3 6 7 2 5 4 MOTOROLA S C <XS TR S/ R F MOTOROLA 89D 7 9 9 9 2 DElb3t,?ES4 7 |~ D T - J 5 - 3 S uraer this data sheet by MJ200AV120/D SEMICONDUCTOR TECHNICAL DATA NPN Silico n Pow er Transistor Module M J 2 0 0 A V 1 2 0 Energy Management Series DUAL TRI-STAGE

Contextual Info: MS3023 RF & Microwave Transistors General Purpose Amplifier Applications GENERAL DESCRIPTION The MS3023 is a common base, hermetically sealed silicon NPN microwave power transistor. This device is designed for Class-C applications in the 1 ~ 2 GHz frequency range. Gold metallization and emitter ballasting provide long-term

ATC 600F

Abstract: 200B MS3023
Contextual Info: MS3023 RF & Microwave Transistors General Purpose Amplifier Applications GENERAL DESCRIPTION The MS3023 is a common base, hermetically sealed silicon NPN microwave power transistor. This device is designed for Class-C applications in the 1 ~ 2 GHz frequency range. Gold metallization and emitter ballasting provide long-term

sunx fx 300

Abstract: FX-101P-Z FT-L80Y FT-V80Y FX-101-CC2 FX-100SERIES FT-WV42 npn transistor w19 D1063 sunx ft-a8
Contextual Info: DIGITAL FIBER SENSOR FX-100SERIES Conforming to EMC Directive Bringing digital fiber sensors closer 01/2007 New possibilities with digital fiber sensors. The FX series is a round 100 for success. Easy to read, multipurpose, and at an economical price. The FX series has been designed to be what customers want it to be.

sunx fx 300

Abstract: sunx ft-a8 npn transistor w19 transistor WT4 sunx dp 20 FX-mr1 wv42 W0472 FX-101P-Z WT4 Transistor
Contextual Info: DIGITAL FIBER SENSOR FX-100SERIES Conforming to EMC Directive Bringing digital fiber sensors closer New possibilities with digital fiber sensors. The FX series is a round 100 for success. Easy to read, multipurpose, and at an economical price. The FX series has been designed to be what customers want it to be.

Contextual Info: PHOTOELECTRIC SENSOR ULTRA-COMPACT PHOTOELECTRIC SENSOR Amplifier Built-in EX Lineup SERIES Conforming to EMC Directive UL Recognition Amplifier Built-in in this size! *1 *1 *1 Volume ratio Volume ratio Volume ratio approx. approx. approx. approx. 1/13 1/5

transistor number code book FREE

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 PIMZ2 NPN/PNP general purpose double transistor Objective specification 2003 Jun 02 Philips Semiconductors Objective specification NPN/PNP general purpose double transistor FEATURES PIMZ2 QUICK REFERENCE DATA

mg400g1ul1

Abstract: LF400A
Contextual Info: ~=m T O S H I B A { D I S C R E T E/0PT039097250 TOSHIBA TOSHIBA CDISCRETE/OPTO DÉTI^cmaso DGitoma a | _ 90D SEMICONDUCTOR 16046 D T '3 3 -3 5 TOSHIBA GTR MODULE MG400G1UL1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS.

transistor number code book FREE

Abstract: M3D302
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 PIMZ2 NPN/PNP general purpose double transistor Product specification Supersedes data of 2003 Jun 02 2003 Jul 14 Philips Semiconductors Product specification NPN/PNP general purpose double transistor

2SC4663

Abstract: TP5V20FS
Contextual Info: i iv y - _ _ . F S SerieS Switching Power Transistor I W ß \f>£l3] 5a 2SC4663 NPN CTP5V20FS) — • - Ô2n3fi? 0003b3fl êOT Outline Dimensions A b s o lu te M axim um R a tin g s m Item i IE # Symbol Storage Temperature Junction Temperature a U9 9 ■

MG400H1UL1

Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG400H1UL1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode . High DC Current Gain : hpE=80 Min. (Ic =400A) . Low Saturation Voltage

MG400G1UL1

Abstract: MG400G1UL1 (0E) MG400G1UL1+(0E) LF400A LF400
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG400G1UL1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode . High DC Current Gain : h F E = 100 Min. (Ic=400A) . Low Saturation Voltage

sot 23 marking code 2t

Abstract: marking DG sot-23 NPN transistor sot-23 MARKING CODE G1 MARKING NT SOT23 sot-23 l6 marking of m7 diodes sot-23 marking LC transistor ad 1v m6 marking transistor sot-23 C5 MARKING TRANSISTOR
Contextual Info: FERRANTI semiconductors HT2 NPN Silicon Planar High Voltage Transistor DESCRIPTION This plastic encapsulated transistor is designed for any application requiring high voltage capability at relatively low collector currents. Complementary to the HT3 Encapsulated in the popular SOT-23 package the device is

MG400H1UL1

Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG400H1UL1 HIGH POWER SWITCHING APPLICATIONS. M O TOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-in Free Whe-eling Diode . High DC Current Gain : hFE=80 Min. (IC=400A) . Low Saturation Voltage

MG200H1FL1A

Contextual Info: MG200H1FL1A GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE — HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The Collector is Isolated from Case. • With Built-in Free Wheeling Diodes. • High DC Current Gain : hpp=80 Min. (IC=200A) • Low Saturation Voltage: VcE(sat)“2V(Max.)

Relais omron G4

Abstract: E3X-F51 E3X-A41 caracteristique E32-D22L CM241 E3X-VG11 E32-T16 E3X-A51 a51 ZENER DIODE
Contextual Info: CELLULE A FIBRE OPTIQUE IIE3X Distance de détection et caractéristiques de pointe pour cette cellule photoélectrique à fibre optique Distance de détection de 7 000 mm avec la fibre E32-T17L Grande rapidité de réponse : 20 µs E3X-F Système clignotant pour un réglage aisé de l’axe

E3XDA

Contextual Info:
Digital Fiber Amplifier E3X-DA Digital Fiber Amplifier Provides High Performance and Ease of Use
First amplifier to offer three user-selectable displays: digital level, percentage and analog display
Flashing LED and digital display of light intensity simplifies optical axis alignment

E3X-NH41

Abstract: Power AMPLIFIER 6012 E32-D11R DC200 silicone oil E32-T24S E3X-NH11 E32-T11L E32-T12L E32-T17L E32-T21L
Contextual Info: E3X-NH Fine Tuning Fiber Photoelectric Sensor High-precision Sensing with Auto- and Manual-tuning Solves All the Problems of Conventional Models Suitable for high-precision positioning using the fine sensitivity adjustment function. Manual-tuning allows threshold adjustments while

MG400H1FK1

Abstract: LF400A
Contextual Info: MG400H1FK1 G TR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode . High DC Current Gain : h]?E=200 Min. . Low Saturation Voltage

MG300M1UK2

Contextual Info: MG300M1UK2 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode. . High DC Current Gain: hpj?=80 Min. (Ic=300A) . Low Saturation Voltage

MG400H1FL1

Abstract: transistor CD 910 ga3n
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG400H1FL1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 2-M 6 . . . . The Collector Is Isolated from Case. With Built-in Free Wheeling Diode High DC Current Gain : hyE=80 Min. (Ic =400A)

MG300M1UK1

Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG300M1UK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector Is Isolated from Case. . With Built-in Free Wheeling Diode . High DC Current Gain: hFE= 100 Min. (Ic=300A) . Low Saturation Voltage