TRANSISTOR MARK BA Search Results

TRANSISTOR MARK BA Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR MARK BA Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
mark G1 SOT-23 Abstract: 2N5551 g1 2N5551 KST5551 Contextual Info: KST5551 KST5551 Amplifier Transistor • Collector-Emitter Voltage: VCEO=160V • Collector Power Dissipation: PC max =350mW 3 2 1 SOT-23 Mark: G1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted	Original	KST5551 350mW OT-23 2N5551 mark G1 SOT-23 2N5551 g1 KST5551	PDF
486DX-CPU Abstract: tamagawa 486DX transistors mos retrograde well 0.35 Contextual Info: MOS Scaling: Transistor Challenges for the 21st Century Scott Thompson, Portland Technology Development, Intel Corp. Paul Packan, Technology Computer Aided Design, Intel Corp. Mark Bohr, Portland Technology Development, Intel Corp. Index words: SDE, transistor, scaling	Original		PDF
Contextual Info: MMBT3646 NPN Switching Transistor Features 3 • NPN High Speed Switching Transistor • Process 22 2 1 SOT-23 1. Base 2. Emitter 3. Collector Ordering Information Part Number Top Mark Package Packing Method MMBT3646 23 SOT-23 3L Tape and Reel Absolute Maximum Ratings	Original	MMBT3646 OT-23 OT-23	PDF
Contextual Info: < Silicon RF Power MOS FET Discrete > RD05MMP1 RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W (a) OUTLINE DRAWING (b) (b) 7.0+/-0.2 0.2+/-0.05 RD05MMP1 is a MOS FET type transistor 0.65+/-0.2 DESCRIPTION 8.0+/-0.2 FEATURES (4.5) INDEX MARK	Original	RD05MMP1 941MHz, RD05MMP1 941MHz 941MHz)	PDF
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N–P N transistor Mark ing CMBT2369 = lJ PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm	Original	OT-23 CMBT2369 C-120	PDF
MARK "326" FET Abstract: transistor 3669 Contextual Info: < Silicon RF Power MOS FET Discrete > RD05MMP1 RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W (a) OUTLINE DRAWING 7.0+/-0.2 0.2+/-0.05 RD05MMP1 is a MOS FET type transistor (b) (b) 0.65+/-0.2 DESCRIPTION 8.0+/-0.2 FEATURES (4.5) INDEX MARK	Original	RD05MMP1 941MHz, RD05MMP1 941MHz 941MHz) 05Electric Oct2011 MARK "326" FET transistor 3669	PDF
MMBT2369 Abstract: MARK 1J HIGH SPEED SWITCHING NPN SOT23 MMBT2369 SOT23 Contextual Info: MMBT2369 NPN Switching Transistor MMBT2369 NPN Switching Transistor • This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. • Sourced from process 21. C E SOT-23 Mark: 1J B Absolute Maximum Ratings * T a Symbol	Original	MMBT2369 MMBT2369 100mA. OT-23 MARK 1J HIGH SPEED SWITCHING NPN SOT23 MMBT2369 SOT23	PDF
transistor 21 2u Abstract: EMD38 DTA113Z DTC114Y EMT6 d38 marking transistor Contextual Info: EMD38 Transistors General purpose transistor isolated transistors EMD38 DTC114Y and DTA113Z are housed independently in a EMT6 package. zDimensions (Unit : mm) zApplications Driver EMT6 1.6 (6) (5) (4) 1pin mark (1) (2) (3) 0.22 zStructure NPN / PNP Silicon epitaxial planar digital transistor	Original	EMD38 DTC114Y DTA113Z 10k/47k 1k/10k transistor 21 2u EMD38 DTA113Z DTC114Y EMT6 d38 marking transistor	PDF
Contextual Info: US5L11 Transistors General purpose transistor isolated transistor and diode US5L11 A 2SB1710 and a RB461F are housed independently in a TUMT5 package. (6) zFeatures 1) Tr : Low VCE(sat) Di : Low VF 2) Small package 0.2 (1) 1.7 0.2 1pin mark 0~0.1 0.17 0.77	Original	US5L11 2SB1710 RB461F 85Max. 15Max. US5L11 1000m	PDF
DI210 Contextual Info: US5L11 Transistors General purpose transistor isolated transistor and diode US5L11 A 2SB1710 and a RB461F are housed independently in a TUMT5 package. (6) zFeatures 1) Tr : Low VCE(sat) Di : Low VF 2) Small package 0.2 (1) 1.7 0.2 1pin mark 0~0.1 0.17 0.77	Original	US5L11 2SB1710 RB461F 85Max. 15Max. US5L11 DI210	PDF
KSA1013 Contextual Info: KSA1013 PNP Epitaxial Silicon Transistor Features • Color TV Audio Output • Color TV Vertical Deflection Output 1 TO-92L 1. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package Packing Method KSA1013YBU KSA1013OBU KSA1013YTA Bulk	Original	KSA1013 O-92L KSA1013YBU KSA1013OBU KSA1013YTA A1013 KSA1013OTA KSA1013	PDF
CBVK741B019 Abstract: F63TNR FDG6302P FFB3904 FFB3906 FFB3946 FMB3946 SC70-6 318 SC70-6 Contextual Info: E2 B2 C2 TRANSISTOR TYPE C1 C1 B1 E1 NPN C2 B2 E2 PNP E1 C1 C2 SC70-6 Mark: .AB FFB3946 / FMB3946 FMB3946 FFB3946 B2 B1 pin #1 E1 SuperSOT-6 Dot denotes pin #1 E2 pin #1 B1 Mark: .002 Dot denotes pin #1 NPN & PNP General Purpose Amplifier This complementary device is designed for use as a general purpose	Original	SC70-6 FFB3946 FMB3946 FFB3946 FFB3904 FFB3906 CBVK741B019 F63TNR FDG6302P FFB3904 FFB3906 FMB3946 SC70-6 318 SC70-6	PDF
FFB3904 Abstract: FFB3906 FFB3946 FMB3946 SC70-6 Contextual Info: E2 B2 C2 TRANSISTOR TYPE C1 C1 B1 E1 NPN C2 B2 E2 PNP E1 C1 C2 SC70-6 Mark: .AB FFB3946 / FMB3946 FMB3946 FFB3946 B2 B1 pin #1 E1 SuperSOT-6 Dot denotes pin #1 E2 pin #1 B1 Mark: .002 Dot denotes pin #1 NPN & PNP General Purpose Amplifier This complementary device is designed for use as a general purpose	Original	SC70-6 FFB3946 FMB3946 FFB3946 FFB3904 FFB3906 FFB3904 FFB3906 FMB3946 SC70-6	PDF
KSC1815YTA Abstract: ksc1815 Contextual Info: KSC1815 NPN Epitaxial Silicon Transistor Features • Audio Frequency Amplifier & High Frequency OSC • Complement to KSA1015 • Collector-Base Voltage: VCBO = 50 V 1 TO-92 1. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package	Original	KSC1815 KSA1015 KSC1815YTA KSC1815YTA	PDF

mark ab SC70 Abstract: br mark Contextual Info: E2 B2 Mark: .AB C2 TRANSISTOR TYPE C1 SC70-6 pin #1 Dot denotes pin #1 B1 E1 FFB3946 / FMB3946 FMB3946 FFB3946 C2 C1 B1 E1 NPN C2 B2 E2 PNP E1 C1 SuperSOTä-6 Mark: .002 pin #1 B1 E2 B2 Dot denotes pin #1 NPN & PNP General Purpose Amplifier This complementary device is designed for use as a general purpose	Original	FFB3946 FMB3946 FFB3946 SC70-6 FFB3904 FFB3906 100mA, mark ab SC70 br mark	PDF
Contextual Info: KSC1815 NPN Epitaxial Silicon Transistor Features • Audio Frequency Amplifier and High-Frequency OSC • Complement to KSA1015 • Collector-Base Voltage: VCBO = 50 V 1 TO-92 1. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package	Original	KSC1815 KSA1015 KSC1815YTA	PDF
KSA1015YTA Contextual Info: KSA1015 PNP Epitaxial Silicon Transistor Features • Low-Frequency Amplifier • Collector-Base Voltage: VCBO = -50 V • Complement to KSC1815 1 TO-92 1. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package Packing Method KSA1015GRTA	Original	KSA1015 KSC1815 KSA1015GRTA KSA1015YTA KSA1015YTA	PDF
Contextual Info: BC63916 NPN Epitaxial Silicon Transistor Features • Switching and Amplifier Applications 1 TO-92 1. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package Packing Method BC63916_D74Z BC639-16 TO-92 3L Ammo BC63916_D27Z BC639-16 TO-92 3L	Original	BC63916 BC63916 BC639-16	PDF
CNZ1105 Abstract: ON1105 Contextual Info: Transmissive Photosensors Photo lnterrupters CNZ1105 (ON1105) Unit: mm Photo Interrupter 14.3±0.3 Mark for Indicating LED side Symbol Rating Unit VR 3 V IF 50 mA PD 75 mW Output (Photo Collector-emitter voltage (Base open) transistor) VCEO 30 V Emitter-collector voltage	Original	CNZ1105 ON1105) PISTR104-007 CNZ1105 ON1105	PDF
MMBT3646 Contextual Info: MMBT3646 MMBT3646 Switching Transistor 3 2 SOT-23 Mark: 23 1. Base 2. Emitter 3. Collector 1 Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO Collector-Emitter Voltage Parameter Value 15 Units V VCES Collector-Emitter Voltage 40 V VCBO	Original	MMBT3646 OT-23 MMBT3646	PDF
diode gp 434 Abstract: RD07MVS1 RD07MVS2 T112 07MVS1 PO520 zener gp 434 Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 2.0+/-0.05 2 INDEX MARK Gate For output stage of high power amplifiers In VHF/UHF band mobile radio sets.	Original	RD07MVS2 175MHz 520MHz RD07MVS2-101 diode gp 434 RD07MVS1 RD07MVS2 T112 07MVS1 PO520 zener gp 434	PDF
Contextual Info: Transistors IC SMD Type NPN Silicon Epitaxial Transistor HN1C07F Unit: mm Features Excellent Current Gain hFE linearity :hFE=25(min) at VCE=6V,IC=400mA 1 pin mark Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50	Original	HN1C07F 400mA 100mA 100mA,	PDF
Contextual Info: E2 B2 C2 TRANSISTOR TYPE C1 C1 B1 E1 NPN C2 B2 E2 PNP E1 C1 C2 SC70-6 Mark: .AA FFB2227A / FMB2227A FMB2227A FFB2227A B2 B1 pin #1 E1 SuperSOT-6 Dot denotes pin #1 E2 pin #1 B1 Mark: .001 Dot denotes pin #1 NPN & PNP General Purpose Amplifier This complementary device is for use as a medium power amplifier and	Original	SC70-6 FFB2227A FMB2227A FFB2227A FFB2222A FFB2907A	PDF
SC70-6 SSOT6 Abstract: SSOT-6 .318 SC70-6 ic 311 pdf datasheets CBVK741B019 F63TNR FDG6302P FFB2222A FFB2227A FFB2907A Contextual Info: E2 B2 C2 TRANSISTOR TYPE C1 C1 B1 E1 NPN C2 B2 E2 PNP E1 C1 C2 SC70-6 Mark: .AA FFB2227A / FMB2227A FMB2227A FFB2227A B2 B1 pin #1 E1 SuperSOT-6 Dot denotes pin #1 E2 pin #1 B1 Mark: .001 Dot denotes pin #1 NPN & PNP General Purpose Amplifier This complementary device is for use as a medium power amplifier and	Original	SC70-6 FFB2227A FMB2227A FFB2227A FFB2222A FFB2907A SC70-6 SSOT6 SSOT-6 .318 SC70-6 ic 311 pdf datasheets CBVK741B019 F63TNR FDG6302P FFB2222A FFB2907A	PDF

TRANSISTOR MARK BA Search Results

TRANSISTOR MARK BA Result Highlights (5)

TRANSISTOR MARK BA Datasheets Context Search

mark G1 SOT-23

486DX-CPU

MARK "326" FET

MMBT2369

transistor 21 2u

DI210

KSA1013

CBVK741B019

FFB3904

KSC1815YTA

mark ab SC70

KSA1015YTA

CNZ1105

MMBT3646

diode gp 434

SC70-6 SSOT6