TRANSISTOR MARKING 113 Search Results

MMBT1015

Abstract: MMBT1815
Contextual Info: UTC MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES 2 *Collector-Emitter voltage: BVCEO=50V *Collector current up to 150mA * High hFE linearity *complimentary to MMBT1015 1 3 MARKING SOT-113 C4

Contextual Info: UTC MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES 2 *Collector-Emitter voltage: BVCEO=50V *Collector current up to 150mA * High hFE linearity *complimentary to MMBT1015 1 3 MARKING SOT-113 C4

Contextual Info: UTC MMBT1015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES *Collector-Emitter Voltage: BVCEO=-50V *Collector current up to 150mA *High Hfe linearity *Complement to MMBT1815 2 1 3 MARKING A4 SOT-113 1:EMITTER 2:BASE 3: COLLECTOR

Contextual Info: UTC MMBT1015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES *Collector-Emitter Voltage: BVCEO=-50V *Collector current up to 150mA *High Hfe linearity *Complement to MMBT1815 2 1 3 MARKING A4 SOT-113 1:EMITTER 2:BASE 3: COLLECTOR

"marking E1"

Abstract: BFS17 BFS17R sot 23 transistor 70.2
Contextual Info: BFS17/BFS17R Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter 2 95 10527 BFS17R Marking: E4

BF569

Abstract: marking A1 TRANSISTOR BF569R marking LM
Contextual Info: BF569/BF569R Silicon PNP Planar RF Transistor Applications For selfoscillating RF mixter stages 1 2 1 3 3 94 9280 BF569 Marking: LH Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter 2 95 10527 BF569R Marking: LM Plastic case (SOT 23) 1= Collector; 2= Base; 3= Emitter

113 marking code PNP transistor

Abstract: equivalent transistor c 495 MARKING E EMT3 113 marking code transistor tl 494 equivalent
Contextual Info: DTA143ZE DTA143ZUA DTA143ZKA Digital transistor, PNP, with 2 resistors Features Dimensions Units : mm • • • • • available in EMT3 (EM3), UMT3 (UMT, SC-70), and SMT3 (SMT, SC-59) packages package marking: — DTA143ZE & DTA143ZKA; E13 — DTA143ZUA; 113

4066 spice model

Abstract: SOT343 lna Spice Parameter, Bipolar Transistor 8948 transistor npn d 2078 marking 900
Contextual Info: Technical Data MBC13900/D Rev. 0, 06/2002 MBC13900 NPN Silicon Low Noise Transistor Scale 2:1 Package Information Plastic Package Case 318M (SOT-343) Ordering Information Device Marking Package MBC13900T1 900 SOT-343 The MBC13900 is a high performance transistor fabricated using Motorola’s 15 GHz fτ

Contextual Info: CNY70 Vishay Semiconductors Reflective Optical Sensor with Transistor Output Description Marking area CNY70, a compact reflective optical sensor incudes IR-Emitter and Phototransistor with daylight suppression filter. Recommended range of operation is from

318M

Abstract: LL1608-FH MBC13900 MBC13900T1 marking r4 SOT343 SOT343 lna
Contextual Info: Technical Data MBC13900/D Rev. 0, 06/2002 MBC13900 NPN Silicon Low Noise Transistor Scale 2:1 Package Information Plastic Package Case 318M (SOT-343) Ordering Information Device Marking Package MBC13900T1 900 SOT-343 The MBC13900 is a high performance transistor fabricated using Motorola’s 15 GHz fτ

Contextual Info: CMBT4123 GENERAL PURPOSE TRANSISTOR N -P-N transistor Marking CMBT4123 = 5B PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.14 0.09 0.48 0.38 § 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR Ï 1.4 1.2 2.6 2.4 R0.1 CckhT I f<R 0 .0 5 J 1’.0 2 ]

4066 spice model

Abstract: LL1608-FH MBC13900 MBC13900T1
Contextual Info: Freescale Semiconductor, Inc. Technical Data MBC13900/D Rev. 0, 06/2002 MBC13900 NPN Silicon Low Noise Transistor Scale 2:1 Freescale Semiconductor, Inc. Package Information Plastic Package Case 318M (SOT-343) Ordering Information Device Marking Package

2SB1132

Abstract: 2SB1132R 2SB1132-R 2SB1132Q 2SB1132-Q
Contextual Info: 2SB1132 -1A, -40V PNP Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-89 Low power dissipation 0.5W 4 MARKING 1 2 3 1132 A Date Code E C B CLASSIFICATION OF hFE

NPN Transistor 1A 400V to - 92

Abstract: marking code SUs NPN transistor ECB TO-92
Contextual Info: STD13003Q Semiconductor NPN Silicon Power Transistor SWITCHING REGULATOR APPLICATIONS PIN Connection Features • High speed switching • VCEO sus =400V • Suitable for Switching Regulator and Motor Control C B Ordering Information Type NO. Marking Package Code

Contextual Info: wmmt BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package 1 BFS17 Marking: E1

sensor cny70

Abstract: CNY70 ir sensing circuit using CNY70
Contextual Info: CNY70 Vishay Semiconductors Reflective Optical Sensor with Transistor Output Description Marking area The CNY70 is a reflective sensor that includes an infrared emitter and phototransistor in a leaded package which blocks visible light. E D Features • •

CNY70

Contextual Info: CNY70 Vishay Semiconductors Reflective Optical Sensor with Transistor Output Description Marking area The CNY70 is a reflective sensor that includes an infrared emitter and phototransistor in a leaded package which blocks visible light. E D Features • •

RF NPN POWER TRANSISTOR 2.5 GHZ

Abstract: Q62702-F1575 marking 17 sot343
Contextual Info: BFP 136W NPN Silicon RF Transistor • For power amplifier in DECT and PCN systems • fT = 5.5GHz • Gold metalization for high reliability ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration

marking 93A

Contextual Info: SIEMENS BFP 93A NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Type

din 3141

Contextual Info: TEMIC BFW92A Semiconductors Silicon NPN Planar RF Transistor Applications Electrostatic sensitive device. Observe precautions for handling. ^ Wide band RF amplifier up to GHz range. Features • High power gain • Low noise figure BFW92A Marking: BFW92A Plastic case TO 50

marking PAs

Contextual Info: BFP136W NPN Silicon RF Transistor 3 • For power amplifier in DECT and PCN systems 4 • fT = 5.5GHz • Gold metalization for high reliability 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP136W PAs

Contextual Info: BFP136W NPN Silicon RF Transistor 3 • For power amplifier in DECT and PCN systems 4 • fT = 5.5GHz • Gold metalization for high reliability 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP136W PAs

transistor rf cm 1104

Abstract: SL 1424 11p
Contextual Info: NPN Silicon RF Transistor BFP 93A • For broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 to 30 mA. E CECC-type in preparation: CECC 50002/. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking

BFR90 transistor

Abstract: BFR90 telefunken ha 680 BFR90 amplifier BFR90S
Contextual Info: Temic BFR90 Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain • Low noise figure • High transition frequency BFR90 Marking: BFR90 Plastic case TO 50