TRANSISTOR MARKING 1J Search Results

Contextual Info: I CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N-P N transistor Marking CMBT2369 = 1J PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 J.02 0.89* 2.00 0.60 0.40 0.90

1B marking transistor

Abstract: 33T4 CMBT2369
Contextual Info: CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N -P N transistor Marking CMBT2369 = 1J PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0 2.8 0.48 0.38 0.14 opérés 3 Pin configuration 2.6 t = BASE 2 = EMITTER 3 = COLLECTOR 2.4 _1 .0 2 _ 0.89 0.60

Contextual Info: SIEMENS SMBTA 42 NPN Silicon Transistor for High Voltages • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: SMBTA 92 PNP Type Marking Ordering Code Pin Configuration SMBTA 42 s1 D Q68000-A6482 1=B 2=E Package

TRANSISTOR S2d

Contextual Info: SIEMENS SMBTA 92 PNP Silicon High Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 42 NPN Type Marking Ordering Code Pin Configuration SMBTA 92 s2D Q68000-A6479 1=B 2=E Package 3=C SOT-23

Contextual Info: BC846A/B-BC847A/B/C BC848A/B/C-BC849B/C BC850B/C General Purpose Transistor NPN Silicon COLLECTOR 3 * “G” Lead Pb -Free *Moisture Sensitivity Level: 1 *ESD Rating - Human Body Model:>4000V -Machine Model:>400V 3 MARKING DIAGRAM 3 XX = Device Code (See

Contextual Info: BC846A/B-BC847A/B/C BC848A/B/C-BC849B/C BC850B/C General Purpose Transistor NPN Silicon *Moisture Sensitivity Level: 1 *ESD Rating - Human Body Model:>4000V -Machine Model:>400V COLLECTOR 3 3 MARKING DIAGRAM 3 XX = Device Code See Table Below 1 1 BASE 2

BC10 npn transistor

Abstract: BC849C-2C BC850B/C C8050 transistor bc 556 BC847A BC848C BC850B BC848A bc848 NPN transistor
Contextual Info: BC846A/B-BC847A/B/C BC848A/B/C-BC849B/C BC850B/C General Purpose Transistor NPN Silicon *Moisture Sensitivity Level: 1 *ESD Rating - Human Body Model:>4000V -Machine Model:>400V COLLECTOR 3 3 MARKING DIAGRAM 3 XX = Device Code See Table Below 1 1 BASE 2

C8050

Contextual Info: BC846A/B-BC847A/B/C BC848A/B/C-BC849B/C BC850B/C General Purpose Transistor NPN Silicon *Moisture Sensitivity Level: 1 *ESD Rating - Human Body Model:>4000V -Machine Model:>400V COLLECTOR 3 3 MARKING DIAGRAM 3 XX = Device Code See Table Below 1 1 BASE 2

Contextual Info: SIEMENS BSP 170 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Avalanche rated ' ^GS th = -2.1.-4.0 V Type ^DS BSP 170 -60 V Type BSP 170 Ordering Code Q67000-S . . . -1.7 A ffDS(on) Package 0.35 Q, SOT-223 Marking Tape and Reel Information

d 998 transistor circuit

Contextual Info: SIEM ENS Silicon N Channel MOSFET Tetrode BF 998 Features • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz Type Marking Ordering Code tape and reel Pin Configuration 4 1 2 3 Package1) B F 998

bss84

Abstract: 013A1 marking BSs sot23 siemens BSS84 siemens
Contextual Info: SIEMENS BSS84 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = -0.8.-2.0 V Pin 1 Pin 2 G Type lD BSS84 Vbs -50 V Type BSS84 BSS84 Ordering Code Q62702-S568 Q67000-S243 -0.13 A Pin 3 S ROS{on) Package Marking

VPS05178

Abstract: BCV61
Contextual Info: BCV 61 NPN Silicon Double Transistor 3 • To be used as a current mirror • Good thermal coupling and VBE matching • High current gain 4 • Low collector-emitter saturation voltage 2 C1 2 C2 (1) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00012 Type Marking

marking 1ks

Abstract: BCV61
Contextual Info: BCV61 NPN Silicon Double Transistor 3
To be used as a current mirror
Good thermal coupling and VBE matching 4
High current gain
Low collector-emitter saturation voltage 2 C1 2 C2 (1) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00012 Type Marking Pin Configuration

BCV61

Contextual Info: BCV61 NPN Silicon Double Transistor 3
To be used as a current mirror
Good thermal coupling and VBE matching 4
High current gain
Low collector-emitter saturation voltage 2 C1 2 C2 (1) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00012 Type Marking Pin Configuration

d 317 transistor

Abstract: ti 317
Contextual Info: SIEMENS BSP 317 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = -0.8.-2.0 V Type h -0.37 A BSP 317 ^DS -200 V Type BSP 317 Ordering Code Q67000-S94 Package flDS(on) 6 fì Marking SOT-223 Tape and Reel Information

smd code LGG

Contextual Info: BSP 88 Infineon technologies SIPMOS * Small-Signal Transistor • N channel • Enhancement mode • Logic Level •^GS th = 0.6. 1.2V Type BSP 8 8 Type BSP 8 8 ^bs h> 240 V 0.32 A Ordering Code Q67000-S070 ^DS(on) 8 Q Package Marking SOT-223 BSP 88 Tape and Reel Information

Contextual Info: SIEMENS NPN Silicon Double Transistors BCV61 • To be used as a current mirror • Good thermal coupling and V be matching • High current gain • Low emitter-saturation voltage Type Marking Ordering Code tape and reel BCV 61 A BCV61 B BCV 61 C 1Js 1Ks

Siemens DIODE E 1240

Abstract: AMS 3630 Code "A06" RF Semiconductor SIEMENS BFP420 Transistor MJE 540 HA 12432 SOT343-3 BFP420 application notes BFP420 A06 ff 0401 transistor
Contextual Info: S IE M E N S SIEGET 25 BFP420 NPN Silicon RF Transistor • • • • • • For High Gain Low Noise Amplifiers For Oscillators up to 10 GHz Noise Figure F = 1.05 dB at 1.8 GHz Outstanding Gms = 20 dB at 1.8 GHz Transition Frequency 1j = 25 GHz Gold metalization for high reliability

transistor 1kp

Abstract: transistor 406 specification marking code 1kp 1Lp marking BCV61 TRANSISTOR 404 LC marking code transistor
Contextual Info: Philips Semiconductors Product specification NPN general purpose double transistor FEATURES BCV61 PINNING • Low current max. 100 mA PIN DESCRIPTION • Low voltage (max. 30 V) 1 collector TR2; base TR1 and TR2 • Matched pairs. 2 collector TR1 APPLICATIONS

BFY88

Abstract: Telefunken u 237 transistor marking code 2C BFY 88 telefunken C80 ui77 silicon npn planar rf transistor sot 143 IMB 06 C BFY 52 transistor 95288
Contextual Info: TELEFUNKEN ELECTRONIC m ilp y M IM electronic Ö1C D • fi^SOQRb 0005332 b 'T- BFY 88 Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: VHF amplifier stages, pre-stages In common emitter configuration Oscillating mixer stages in common base configuration

CF-400

Contextual Info: TELEFUNKEN ELECTRONIC aie T> a ^ O O S b GDDS3b7^ 3 • AL66 CF 400 m i » ! » electronic Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 G Hz in common Gate 1 configuration; in wireless telephone, broadcast sets, cabel TV and equipments with

Contextual Info: Philips Semiconductors Product specification NPN general purpose double transistor FEATURES BCV61 PINNING • Low curren t max. 100 mA PIN DESCRIPTION • Low voltage (max. 30 V) 1 co lle cto r TR2; base TR1 and TR2 • M atched pairs. 2 co lle cto r TR1

BU 508 transistor

Abstract: transistor bu Bu608A bu508 transistor BU 608 bu 508 sot-23 2603 transistor bc 488 BU608
Contextual Info: TELEFUNKEN ELECTRONIC 1?E D • fl^EOO^b DOQTMbS BU 508 •*BU 508 A ■¡rHUHFMMKIM electronic Cf«aliy«Technologies T -32-/3 Silicon NPN Power Transistors Applications: Horizontal deflection circuits in color TV receive« Features: • In triple diffusiion technique

Contextual Info: Philips Semiconductors Product specification NPN switching transistor PMST2369 FEATURES PINNING • Low current max. 200 mA PIN • Low voltage (max. 15 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • High-speed switching applications, primarily in portable