TRANSISTOR MARKING 2L Search Results

1N914

Abstract: LMBT5401LT1G
Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Transistor FEATURE LMBT5401LT1G ƽ We declare that the material of product compliance with RoHS requirements. 3 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping 1 LMBT5401LT1G 2L 3000/Tape&Reel LMBT5401LT3G

Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Transistor FEATURE LMBT5401LT1G ƽPb-Free package is available. 3 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping 1 LMBT5401LT1G 2L 3000/Tape&Reel LMBT5401LT3G 2L 10000/Tape&Reel 2 SOT– 23 MAXIMUM RATINGS

1N914

Contextual Info: LESHAN RADIO COMPANY, LTD. DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR LMBT5401DW1T1G FEATURE 6 ƽ We declare that the material of product compliance with RoHS requirements. 5 4 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT5401DW1T1G

MMBT5401

Abstract: MMBT5401-AE3-R MMBT5401L MMBT5401L-AE3-R
Contextual Info: UNISONIC TECHNOLOGIES CO., MMBT5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES 2 *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =350mW *High current gain 1 MARKING 3 2L SOT-23 *Pb-free plating product number:MMBT5401L

2L smd transistor

Abstract: CMBT5401 TRANSISTOR SMD MARKING 2l smd 2l
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT5401 SILICON P–N–P HIGH–VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT5401 = 2L PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration

2L smd transistor

Abstract: TRANSISTOR SMD MARKING 2l smd transistor 2l CMBT5401
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5401 SILICON P–N–P HIGH–VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT5401 = 2L PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

2L smd transistor

Abstract: MARKING SMD pnp TRANSISTOR ec smd transistor 2l TRANSISTOR SMD MARKING 2l ts 4141 TRANSISTOR smd CMBT5401 2L smd Device marking 160
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5401 SILICON P–N–P HIGH–VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT5401 = 2L Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR

sot-23 2L

Contextual Info: UTC MMBT5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =350mW *High current gain 2 1 APPLICATIONS 3 *Telephone Switching Circuit *Amplifier MARKING SOT-23

sot-23 Marking 2L

Abstract: MMBT5401 sot23 marking 2l
Contextual Info: UTC MMBT5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =350mW *High current gain 2 1 3 APPLICATIONS *Telephone Switching Circuit *Amplifier SOT-23 MARKING

Contextual Info: CMBT5401 SILICON P-N -P HIGH-VOLTAGE TRANSISTOR P-N -P transistor Marking CMBT5401 = 2L PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 1 .1 5 0.9Ö~^ ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter

Contextual Info: CMBT5401 SILICON P-N -P HIGH-VOLTAGE TRANSISTOR P-N-P transistor Marking CMBT5401 = 2L PA CKA GE OU TLINE DETAILS A LL DIM ENSIO NS IN mm _3 .0_ 2.8 0.14 0.48 0.38 3 Pin configuration BASE EMITTER COLLECTOR 2.6 2.4 _1.02 o.sr 0.60 0.40 _2 .00_ ABSOLUTE MAXIMUM RATINGS

CMBT5401

Abstract: 2L TRANSISTOR
Contextual Info: CMBT5401 SILICON P-N -P HIGH-VOLTAGE TRANSISTOR P-N-P transistor Marking CMBT5401 = 2L PACKAGE OU TLINE DETAILS A LL DIM ENSIO NS IN mm _3 .0_ 2.8 0.14 0.48 0.38 ! 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _1.02 o.sr _2 .00_ 1.80 ABSOLUTE MAXIMUM RATINGS

2L smd transistor

Abstract: CMBT5401 TRANSISTOR SMD MARKING 2l smd transistor 2l
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT5401 SILICON P–N–P HIGH–VOLTAGE TRANSISTOR P–N–P transistor Marking

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT5401 TRANSISTOR PNP SOT-23 FEATURES z Complementary to MMBT5551 z Ideal for medium power amplification and switching 1. BASE 2. EMITTER 3. COLLECTOR MARKING: 2L

MMBT5401 SOT-23

Abstract: marking 2L 2l sot23 marking transistor marking 2L
Contextual Info: MMBT5401 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Complementary to MMBT5551 Ideal for medium power amplification and switching — MARKING: 2L Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

DTC124XK equivalent

Contextual Info: DTC124XK NPN Bias Resistor Transistor 3* ° '' 0.4 2L The built-in bias resistor allows inverter circuit configu­ ration without external resistors for input. g Pin configuration 1 = Collector/OUT 2 = Base/I N 3 = Emitter/GND m Top View ; Marking DC4 OUT

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5401 SILICON P–N–P HIGH–VOLTAGE TRANSISTOR P–N–P transisto r Marking CMBT5401 = 2L Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR

Contextual Info: SIEMENS BFR 182W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fr = 8GHz F = 1.2dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code

Contextual Info: SIEMENS BFP 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code

transistor B 1184

Contextual Info: SIEMENS BFP182R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • * r = 8GHz F = 1.2dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

Contextual Info: SIEMENS BFR 182W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • f j = 8GHz F = 1.2dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

Transistor BFR 181w

Abstract: GMA13 MARKING CODE 21E SOT323 TRANSISTOR BO 345
Contextual Info: SIEMENS BFR 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fr = 8GHz F=1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

Contextual Info: S IE M E N S BF 775A NPN Silicon RF Transistor • Especially suitable for amplifiers and TV-sat tuners ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BF 775A LGs Q62702-F1250 1 =B Package

1N914 SOT-23

Abstract: 2L SOT-23 1N914 LMBT5401LT1 LMBT5401LT1G MARKING .01 SOT
Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Transistor FEATURE LMBT5401LT1 ƽPb-Free package is available. 3 DEVICE MARKING AND ORDERING INFORMATION Device Package Shipping 1 LMBT5401LT1 SOT-23 3000/Tape&Reel LMBT5401LT1G Pb-Free SOT-23 3000/Tape&Reel 2 SOT– 23