TRANSISTOR MARKING C Y Search Results

KTD1624

Abstract: mark A sot-89 MARK Y B Y device marking SOT89 transistor marking transistor marking c
Contextual Info: SEMICONDUCTOR KTD1624 MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description Device Mark Y KTD1624 * Grade A A,B,C Lot No. 016 1 2 Year 0 ~ 9 : 2000~2009 16 Week 16 : 16th Week Note * Grade: Transistor only

mark A sot-89

Abstract: KTD1003
Contextual Info: SEMICONDUCTOR KTD1003 MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description Device Mark L KTD1003 * Grade A A,B,C Lot No. 816 1 2 8 Year 0 ~ 9 : 1900~1999 16 Week 16 : 16th Week Note * Grade: Transistor only

SOT89 transistor marking

Abstract: sot-89 transistor marking c marking sot89 KTC4373 SOT89 Package C 4834 transistor sot-89 marking marking 00 SOT 89 Marking transistor
Contextual Info: SEMICONDUCTOR KTC4373 MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description Device Mark C KTC4373 * Grade O O,Y Lot No. 816 1 2 8 Year 0 ~ 9 : 1900~1999 16 Week 16 : 16th Week Note * Grade: Transistor only

mark A sot-89

Abstract: KTB1124 transistor marking c
Contextual Info: SEMICONDUCTOR KTB1124 MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description Device Mark X KTB1124 * Grade A A,B,C Lot No. 016 1 2 Year 0 ~ 9 : 2000~2009 16 Week 16 : 16th Week Note * Grade: Transistor only

mark A sot-89

Abstract: KTC4377
Contextual Info: SEMICONDUCTOR KTC4377 MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description Device Mark S KTC4377 * Grade A A,B,C,D Lot No. 816 1 2 8 Year 0 ~ 9 : 1900~1999 16 Week 16 : 16th Week Note * Grade: Transistor only

M8050

Contextual Info: M8050 40V, 0.8A, 200mW NPN Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  Power dissipation A L 3 3 C B Top View MARKING 1 Product Marking Code M8050 Y11

M8050

Abstract: m8050 NPN equivalent M8050 equivalent
Contextual Info: M8050 40V, 0.8A, 200mW NPN Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  Power dissipation A L 3 3 MARKING C B Top View 1 Product Marking Code M8050 Y11

Contextual Info: Transistors SST6839 I PNP General Purpose Transistor SST6839 •Features 1 B V c£c < — 40V lc = — 1mA) 2 ) Com plem ents the SST6838. •External dimensions (Units : mm) •Package, marking« and packaging specifications Type S ST 6S39 Package Marking

BC648B

Contextual Info: Transistors BC847B NPN General Purpose Transistor I BC847B •Feature« •E x te rn a l dimensions Units : mm 1 > BVceo<45V (lc=1m A ) 2 ) Complements the BC857B. BC847B •P a c k a g e , marking, and packaging specifications Type BC847B Package Marking

MARKING 1F

Abstract: CSC2712 CSC2712BL CSC2712GR CSC2712Y MARKING 1G TRANSISTOR
Contextual Info: SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking C SC 2712Y=1E C S C 2712G R G =1F CSC 2712BL(L)=1G _3.0_ 2.8 0.14 0.09 0.48 0.38 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 2.6 2.4 _l.02_

1AM MMBT3904

Abstract: transistors 1am transistor 1am
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR NPN FEATURES z Complementary Type The PNP Transistor MMBT3906 is Recommended z Epitaxial Planar Die Construction SOT-23 (3)C MARKING: 1AM 1AM Ｃｏｄｅ

Contextual Info: FCX593 SOT89 Silicon planar high voltage transistor Complementary part number - FMMT493 C Device marking - P93 B E E C C B Pinout - top view Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO -120 V Collector-emitter voltage VCEO

SOT89 52 10A

Abstract: Marking P93 sot89 FCX593 FMMT493 TS16949
Contextual Info: FCX593 SOT89 Silicon planar high voltage transistor Complementary part number - FMMT493 C Device marking - P93 B E E C C B Pinout - top view Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO -120 V Collector-emitter voltage VCEO

transistor smd marking BA RE

Abstract: fr51 FR MARKING SMD TRANSISTOR transistor smd marking BA CMBT2484 ba sot23
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR CMBT2484 SOT23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: 1U 1 2 LOW NOISE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)

transistor smd marking BA RE

Abstract: transistor smd marking PE FR MARKING SMD TRANSISTOR CMBT2484 transistor smd marking BA sot-23
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR CMBT2484 SOT23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: 1U 1 2 LOW NOISE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)

supersot 6 TE

Abstract: Supersot 6
Contextual Info: D is cr e te Power S iq n a l T e c h n o lo q ie s MICDNDUCTDRm ^ ^ FMB1020 4p Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Com plem entary Dual Transistor

sot-23 MARKING CODE ZA

Abstract: sot-23 CODE 41 bfs17p mc
Contextual Info: NPN Silicon RF Transistor BFS17P • For broadband amplifiers up to 1 G H z at collector currents from 1 to 20 mA. E C E C C -typ e available: C E C C 50002/262. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code

ts 4141 TRANSISTOR smd

Abstract: CMBT2484
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR CMBT2484 SOT23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: 1U 1 2 LOW NOISE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)

BF422

Abstract: BF423
Contextual Info: BF422 NPN Silicon Transistor Descriptions PIN Connection • High voltage application • Monitor equipment application C Features B B C E • Collector-Emitter voltage : VCEO=250V • Complementary pair with BF423 E TO-92 Ordering Information Type NO. Marking

SBC-558

Abstract: SBC548 SBC558
Contextual Info: SBC548 NPN Silicon Transistor Descriptions PIN Connection • General purpose application C • Switching application B Features B C • High voltage : VCEO=30V • Complementary pair with SBC558 E E TO-92 Ordering Information Type NO. Marking SBC548 Package Code

SBC547

Abstract: SBC557 2SBC547
Contextual Info: SBC547 NPN Silicon Transistor Descriptions PIN Connection • General purpose application C • Switching application B Features B C • High voltage : VCEO=45V • Complementary pair with SBC557 E E TO-92 Ordering Information Type NO. Marking SBC547 Package Code

SOT89 52 10A

Abstract: FCX495 TS16949 marking N95
Contextual Info: FCX495 SOT89 NPN silicon planar high voltage transistor Features • 150 Volt VCEO • 1 Amp continuous current E C C Device marking B N95 Pinout - top view Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage

SBC546

Abstract: SBC556
Contextual Info: SBC546 NPN Silicon Transistor Descriptions PIN Connection • General purpose application C • Switching application B Features B C • High voltage : VCEO=55V • Complementary pair with SBC556 E E TO-92 Ordering Information Type NO. Marking SBC546 SBC546

STD1862

Abstract: TRANSISTOR stb1277 STB1277 std1862 TRANSISTOR
Contextual Info: STD1862 NPN Silicon Transistor Descriptions PIN Connection • Audio power amplifier C • High current application E B B C Features E • High current : IC=2A • Complementary pair with STB1277 TO-92 Ordering Information Type NO. Marking STD1862 STD1862