TRANSISTOR MARKING CK Search Results

Tranter

Abstract: bc857b
Contextual Info: Transistors I BC857B PNP General Purpose Transistor BC857B # Features # External dim ensions Units : mm 1 ) B V c£0 < — 4 5 V iic = “ 1m A) 2 ) C om plem ents th e B C 8478. • Package, marking, and packaging specifications Type BC857B P a ckage Marking

Contextual Info: CMBT5401 SILICON P-N -P HIGH-VOLTAGE TRANSISTOR P-N-P transistor Marking CMBT5401 = 2L PA CKA GE OU TLINE DETAILS A LL DIM ENSIO NS IN mm _3 .0_ 2.8 0.14 0.48 0.38 3 Pin configuration BASE EMITTER COLLECTOR 2.6 2.4 _1.02 o.sr 0.60 0.40 _2 .00_ ABSOLUTE MAXIMUM RATINGS

A1362

Abstract: CSA1362 CSA1362GR transistor marking CS
Contextual Info: 23033^4 DDGOflbT CSA1362 LOW FREQUENCY POWER AMPLIFIER TRANSISTOR P -N -P transistor PA CKA G E O UTLIN E DETAILS ALL D IM EN SIO N S IN m m Marking CSA1362GR = AE _3.0_ 2.8 0.14 0.09 0.48 0.38 0.70 0.50 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR

Contextual Info: CMBT3906 SILICON EPITAXIAL TRANSISTOR P-N -P transistor Marking CMBT3906 = 2A PA CKA G E O U TLIN E DETAILS A LL D IM EN SIO N S IN m m _3.0_ 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _1.02 0.89" 2.00 0.60 0.40 1.80

TRANSISTOR BL 100

Abstract: CSC2712 CSC2712BL CSC2712GR CSC2712Y
Contextual Info: CDU CSC2712 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor PA CKA G E OU TLIN E DETAILS A LL DIM ENSIO NS IN m m Marking CSC2712Y=1E CSC2712GR G =1 F CSC2712BL(L)=1 G _3.0_ 2.8 0.14 0.48 0.33 Pin configuration 3 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6

Contextual Info: CDU CMBT4123 GENERAL PURPOSE TRANSISTOR N -P-N transistor Marking CMBT4123 = 5B PA CKA GE O U TLINE D ETAILS A LL D IM ENSIO NS IN m m J3.0 2.8 0.14 0.48 0.38 3 Pin configuration 2.6 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.4 _1 ,° 2_ 0.89 0.60 0.40 ABSOLUTE MAXIMUM RATINGS

Contextual Info: 23033*34 Ü DO Ga b? 234 • CSA1162 CDÎL LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR P-N-P transistor PA CKA G E O U TLIN E D ETA ILS ALL D IM EN SIO N S IN m m Marking CSA1162Y-3E CSA1162GR G -3F _3.0 2 . 8~ 0.48 0.38 3 Pin configuration 1 = BASE

Contextual Info: CSC2712 CDÎL SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor Marking PA CKA G E O U TLIN E D ETA ILS ALL D IM EN SIO N S IN m m CSC2712Y=1E CSC2712GR G =1 F CSC2712BL(L)=1G _3.0_ 2.8 0.14 6.09 0.48 0.38 Pin configuration 0.70 0.50 3 1 = BASE 2 = EMITTER

Contextual Info: 2 3 Û 3 3 C14 0Q00Ö4Ö 362 • CMBT6517 HIGH-VOLTAGE TRANSISTOR N -F -N transistor Marking CMBT6517 = 1Z PA CKA GE O U TLINE DETAILS A LL DIM ENSIO NS IN m m 3.0 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ■C> 2 ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter

Contextual Info: DP500 Semiconductor PNP Silicon Transistor Description • Suit able for low volt age large current drivers • Excellent h FE Linearity • Com plem ent ary pair wit h DN500 • Switching Application Ordering Information Type N O. Marking Pa ck a ge Code

din 3141

Contextual Info: TEMIC BFW92A Semiconductors Silicon NPN Planar RF Transistor Applications Electrostatic sensitive device. Observe precautions for handling. ^ Wide band RF amplifier up to GHz range. Features • High power gain • Low noise figure BFW92A Marking: BFW92A Plastic case TO 50

1370E

Abstract: CSB1370 CSB1370E
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON EPITAXIAL POWER TRANSISTOR CSB1370 9AW TO-220 MARKING : AS BELOW Designed For AF Power Amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL

CN1016

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLASTIC POWER DARLINGTON TRANSISTOR CN1016 9AW TO-3P MARKING:- ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL VALUE VCBO 160 Collector -Base Voltage

CSD1833

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL POWER TRANSISTOR CSD1833 9AW TO220 MARKING : AS BELOW Low Freq. Power AMP. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION Collector -Base Voltage

transistors marking HJ

Contextual Info: DTA124EE DTA124EUA DTA124EKA Digital transistor, PNP, with 2 resistors Features Dimensions Units : mm available in EMT3 (EM3), UMT3 (UMT, SC-70), and SMT3 (SMT, SC-59) packages DTA124EE (EMT3) hJLS-^ , MAh I .6±0.2 package marking: DTA124EE, DTA124EUA, and DTA124EKA; 15

Contextual Info: CDU CMBTA92 CMBTA93 SILICON EPITAXIAL TRANSISTORS P-N-P transistor Marking CMBTA92 = 2D CMBTA93 = 2E PA CKA G E O U TLINE D ETAILS A LL D IM ENSIO NS IN m m 3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _1.02 _ 0.89

INA-12063

Abstract: INA-12 INA-12063-BLK INA-12063-TR1 ir 032
Contextual Info: 1.5 GHz Low Noise Self-Biased Transistor Amplifier Technical Data INA-12063 Features • Integrated, Active Bias Circuit Surface Mount Package SOT-363 SC-70 Description Pin Connections and Package Marking The INA-12063 is a unique RFIC that combines the performance

transistor D 2395

Abstract: CONTINENTAL DC-DC CONVERTER transistor 2395 2395 transistor transistor D 2395 a CDD2395 D 2395 2395 transistor datasheet
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL POWER TRANSISTOR CDD2395 9AW TO-220 MARKING : AS BELOW Designed For Relay drive and DC-DC Converter. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION

CSD611

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLASTIC POWER DARLINGTON TRANSISTOR CSD611 9AW TO-220 MARKING : CSD 611 Designed for Relay Drive and Motor Drive ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION

CSB1370

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON EPITAXIAL POWER TRANSISTOR CSB1370 9AW TO-220 MARKING : AS BELOW Designed For AF Power Amplifier.

marking 9AW

Abstract: CN1016
Contextual Info: Continental Device India Limited IS/ISO 9002 Lic# QSC/L- 000019.2 IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLASTIC POWER DARLINGTON TRANSISTOR CN1016 9AW TO-3P MARKING:- ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)

CSB810

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLASTIC POWER DARLINGTON TRANSISTOR CSB810 9AW TO-220 MARKING : CSB 810 Designed for Relay Drive and Motor Drive ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION

285-1

Abstract: 6024-K bob smith termination amp 4546 jc rfics marking 76 RHO marking waveguide selective switch INA-12 INA-12063 INA-12063-BLK
Contextual Info: 1.5 GHz Low Noise Self-Biased Transistor Amplifier Technical Data INA-12063 Features • Integrated, Active Bias Circuit Surface Mount Package SOT-363 SC-70 Description Pin Connections and Package Marking The INA-12063 is a unique RFIC that combines the performance

marking GG

Abstract: marking code 604 SOT23
Contextual Info: NPN Silicon RF Transistor BFR 93P • For low -distortion broadband am plifiers up to 1 GHz at collector currents from 2 to 30 mA. c ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel Package