Untitled
Abstract: No abstract text available
Text: FJX3904 NPN Epitaxial Silicon Transistor Feature 3 • General-Purpose Transistor 2 1 SC-70 1. Base 2. Emitter 3. Collector Package Marking and Ordering Information Device Item Device Marking Package Packing Method Qty pcs FJX3904TF S1A SC-70 TAPE & REEL
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FJX3904
SC-70
FJX3904TF
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UMT222A
Abstract: TRANSISTOR 1P transistors marking 1p BC847B BC857B MMST2222A PN2222A T116 B128D MARKING 5D NPN
Text: BC847B Transistors NPN General Purpose Transistor BC847B zExternal dimensions Unit : mm zFeatures 1) BVCEO < 45V (IC=1mA) 2) Complements the BC857B. 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 zPackage, marking, and Packaging specifications Packaging type SST3 Marking
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BC847B
BC857B.
UMT222A
TRANSISTOR 1P
transistors marking 1p
BC847B
BC857B
MMST2222A
PN2222A
T116
B128D
MARKING 5D NPN
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Untitled
Abstract: No abstract text available
Text: BC847B Transistors NPN General Purpose Transistor BC847B zExternal dimensions Unit : mm zFeatures 1) BVCEO < 45V (IC=1mA) 2) Complements the BC857B. 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 zPackage, marking, and Packaging specifications Packaging type SST3 Marking
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BC847B
BC857B.
BC847B
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CQ 523
Abstract: MARKING CODE cq sot-89
Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor NPN silicon L2SC2411KXLT1G FEATURE 3 ƽEpitaxial planar type ƽComplementary to L2SA1036K 1 ƽPb-Free package is available 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking SOT– 23 TO–236AB Shipping
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L2SC2411KXLT1G
L2SA1036K
236AB)
L2SC2411KPLT1G
3000/Tape
L2SC2411KPLT3G
10000/Tape
L2SC2411KQLT1G
L2SC2411KQLT3G
CQ 523
MARKING CODE cq sot-89
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transistor marking 3em
Abstract: MMBTH10LT1 mmbth10 MMBTH10-4LT1
Text: MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc
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MMBTH10LT1,
MMBTH10-4LT1
r14525
MMBTH10LT1/D
transistor marking 3em
MMBTH10LT1
mmbth10
MMBTH10-4LT1
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Untitled
Abstract: No abstract text available
Text: MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc
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MMBTH10LT1,
MMBTH10-4LT1
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2FK transistor
Abstract: No abstract text available
Text: MMBT2907AK PNP Epitaxial Silicon Transistor MMBT2907AK PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2FK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units
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MMBT2907AK
MMBT2907AK
OT-23
2FK transistor
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Untitled
Abstract: No abstract text available
Text: MMBT3904K NPN Epitaxial Silicon Transistor MMBT3904K NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter Value Units
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MMBT3904K
MMBT3904K
OT-23
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SOT-23 2xk
Abstract: 2xk transistor npn
Text: MMBT4401K NPN Epitaxial Silicon Transistor MMBT4401K NPN Epitaxial Silicon Transistor Switching Transistor Marking 3 2XK 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units VCBO
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MMBT4401K
MMBT4401K
OT-23
SOT-23 2xk
2xk transistor npn
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2FK transistor
Abstract: MMBT2907AK fairchild sot-23 Device Marking pc PNP Epitaxial Silicon Transistor sot-23 a/smd 2fk transistor
Text: MMBT2907AK PNP Epitaxial Silicon Transistor MMBT2907AK PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2FK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units
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MMBT2907AK
MMBT2907AK
OT-23
2FK transistor
fairchild sot-23 Device Marking pc
PNP Epitaxial Silicon Transistor sot-23
a/smd 2fk transistor
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transistor 1AK
Abstract: 1AK marking transistor MMBT3904K 1ak transistor
Text: MMBT3904K NPN Epitaxial Silicon Transistor MMBT3904K NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter Value Units
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MMBT3904K
MMBT3904K
OT-23
transistor 1AK
1AK marking transistor
1ak transistor
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2tk transistor
Abstract: No abstract text available
Text: MMBT4403K PNP Epitaxial Silicon Transistor MMBT4403K PNP Epitaxial Silicon Transistor Switching Transistor Marking 3 2TK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units VCBO
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MMBT4403K
MMBT4403K
OT-23
2tk transistor
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mps 1049
Abstract: JB marking transistor Marking H11 sot marking JB sot23 JB MARKING SOT-23
Text: MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: Features COLLECTOR 3 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1 BASE MAXIMUM RATINGS
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MMBTH10LT1,
MMBTH10-4LT1
mps 1049
JB marking transistor
Marking H11 sot
marking JB sot23
JB MARKING SOT-23
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L2SC2411KRLT1G
Abstract: L2SC2411KPLT1 L2SC2411KPLT1G L2SC2411KQLT1 L2SC2411KQLT1G L2SC2411KRLT1 L2SC2411KLT1
Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor NPN silicon L2SC2411K*LT1 FEATURE 3 ƽEpitaxial planar type ƽComplementary to L2SA1036K 1 ƽPb-Free package is available 2 DEVICE MARKING AND ORDERING INFORMATION Device SOT– 23 TO–236AB Marking Shipping
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L2SC2411K
L2SA1036K
236AB)
L2SC2411KPLT1
3000/Tape
L2SC2411KPLT1G
L2SC2411KQLT1
L2SC2411KQLT1G
L2SC2411KRLT1G
L2SC2411KPLT1
L2SC2411KPLT1G
L2SC2411KQLT1
L2SC2411KQLT1G
L2SC2411KRLT1
L2SC2411KLT1
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SO642
Abstract: SO692
Text: SO642 SMALL SIGNAL NPN TRANSISTOR • ■ ■ ■ Type Marking SO 642 N91 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS HIGH VOLTAGE TRANSISTOR FOR VIDEO AMPLIFIER PNP COMPLEMENT IS SO692 2 3
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SO642
SO692
OT-23
SO642
SO692
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MARKING 1PK
Abstract: 1PK transistor MMBT2222AK fairchild sot-23 Device Marking pc
Text: MMBT2222AK NPN Epitaxial Silicon Transistor MMBT2222AK NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1PK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage
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MMBT2222AK
MMBT2222AK
OT-23
MARKING 1PK
1PK transistor
fairchild sot-23 Device Marking pc
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Untitled
Abstract: No abstract text available
Text: MMBT3906K PNP Epitaxial Silicon Transistor MMBT3906K PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage
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MMBT3906K
MMBT3906K
OT-23
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2AK TRANSISTOR
Abstract: PNP Epitaxial Silicon Transistor sot-23 MMBT3906K marking 2AK MMBT3906K 2ak
Text: MMBT3906K PNP Epitaxial Silicon Transistor MMBT3906K PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage
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MMBT3906K
MMBT3906K
OT-23
2AK TRANSISTOR
PNP Epitaxial Silicon Transistor sot-23
marking 2AK
MMBT3906K 2ak
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Untitled
Abstract: No abstract text available
Text: MMBT2222AT NPN Epitaxial Silicon Transistor Features C • General purpose amplifier transistor. • Ultra-Small Surface Mount Package for all types. E B • General purpose switching & amplification application Marking : A02 SOT-523F Absolute Maximum Ratings
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MMBT2222AT
OT-523F
MMBT2222AT
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JESD22a121
Abstract: marking A02 KTMC1060SC MMBT2222AT JESD22A111
Text: MMBT2222AT NPN Epitaxial Silicon Transistor Features C • General purpose amplifier transistor. E • Ultra-Small Surface Mount Package for all types. B • General purpose switching & amplification application Marking : A02 SOT-523F Absolute Maximum Ratings
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MMBT2222AT
OT-523F
MMBT2222AT
JESD22a121
marking A02
KTMC1060SC
JESD22A111
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Untitled
Abstract: No abstract text available
Text: MMBT2222AT NPN Epitaxial Silicon Transistor Features C • General purpose amplifier transistor. E • Ultra-Small Surface Mount Package for all types. B • General purpose switching & amplification application Marking : A02 SOT-523F Absolute Maximum Ratings
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MMBT2222AT
MMBT2222AT
OT-523F
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BF822W
Abstract: No abstract text available
Text: Product specification Philips Semiconductors BF820W; BF822W NPN high voltage transistor MARKING FEATURES • S-mlni package TYPE NUMBER MARKING CODE BF820W -1 V BFB22W -1X • High voltage. APPLICATIONS Especially intended for telephony and professional communication equipment.
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OCR Scan
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BF820W
BFB22W
BF820W;
BF822W
OT323
OT323)
BF822W
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supersot 6 TE
Abstract: Supersot 6
Text: D is cr e te Power S iq n a l T e c h n o lo q ie s MICDNDUCTDRm ^ ^ FMB1020 4p Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Com plem entary Dual Transistor
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FMB1020
300mA.
100uA
100mA
150mA
100MHz
100uA,
200mA,
supersot 6 TE
Supersot 6
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transistor Y4
Abstract: complementary npn-pnp power transistors marking A1 TRANSISTOR FMB1020 marking 004
Text: D is cr ete Power S iq n a l T e ch n o lo g ie s MICDNDUCTDRtm ^ ^ FMB1020 Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Complem entary Dual Transistor SuperSOT-6 Surface Mount Package
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FMB1020
300mA.
100uA
100mA
150mA
200mA,
100MHz
100uA,
fmb1020
transistor Y4
complementary npn-pnp power transistors
marking A1 TRANSISTOR
marking 004
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