TRANSISTOR MARKING HY Search Results

BC648B

Contextual Info: Transistors BC847B NPN General Purpose Transistor I BC847B •Feature« •E x te rn a l dimensions Units : mm 1 > BVceo<45V (lc=1m A ) 2 ) Complements the BC857B. BC847B •P a c k a g e , marking, and packaging specifications Type BC847B Package Marking

2SC3647

Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD 2SC3647 NPN SILICON TRANSISTOR HIGH-VOLTAGE SWITCHING APPLICATIONS FEATURES „ * High breakdown voltage and large current capacity * Fast switching time * Very small size marking it easy to provide high - density, small-sized hybrid ICs

Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD 2SC3647 NPN SILICON TRANSISTOR HIGH-VOLTAGE SWITCHING APPLICATIONS  FEATURES * High breakdown voltage and large current capacity * Fast switching time * Very small size marking it easy to provide high – density, small-sized hybrid ICs

npn switching transistor Ic 100mA

Abstract: 2SC3647 IC free transistor transistor Ic 1A NPN
Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD 2SC3647 NPN SILICON TRANSISTOR HIGH-VOLTAGE SWITCHING APPLICATIONS „ FEATURES * High breakdown voltage and large current capacity * Fast switching time * Very small size marking it easy to provide high – density, small-sized hybrid ICs

837U

Abstract: TA06
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking Collector Collector to Current Emitter Voltage IC VCEO V mA DC Current Gain HFE @ VCE / IC Min-Max V / mA COMPLEMENTARY SMALL SIGNAL TRANSISTOR CH817UPN 817U CHT06UPN TA06 CH847UPN U2 CHT2227UPN U3

TRANSISTOR S 838

Abstract: 339 marking code transistor TR13 339 marking code transistor manual
Contextual Info: Package Details DPAK Transistor Case Mechanical Drawing Part Marking: Full Part Number Mounting Pad Geometry Dimensions in mm R3 (4-March 2010) w w w. c e n t r a l s e m i . c o m Package Details DPAK Transistor Case Tape Dimensions and Orientation (Dimensions in mm)

marking R1P

Abstract: SST2222A RXT2222A FDCT2222A MMST2222A PN2222A T100 T106 T116 T146
Contextual Info: Transistors NPN Medium Power Transistor Switching I UMT2222A/SST2222A/MMST2222A/RXT2222A/PN2222A I External dimensions (Units : mm) •Features 1 ) BVceo< 40V (lc=10m A) 2 ) Complements the UMT2907A/SST2907A/MMST2907A /RXT2907A/PN2907A. ÜMT2222A •Package, marking and packaging specifications

marking R1P

Abstract: PN2222A ITT FDCT2222A MMST2222A PN2222A SST2222A T100 T106 T116 T146
Contextual Info: Transistors NPN Medium Power Transistor Switching UMT2222A/SST2222A/MMST2222A/RXT2222A/PN2222A I I External dimensions (Units : mm) •Features 1 ) BVceo< 40V (lc=10m A) 2 ) Complements the UMT2907A/SST2907A/MMST2907A /RXT2907A/PN2907A. ÜMT2222A •P ackage, marking and packaging specifications

2SC3647

Abstract: 2SC3647-AB3-R 2SC3647L-AB3-R
Contextual Info: UNISONIC TECHNOLOGIES CO., 2SC3647 NPN EPITAXIAL SILICON TRANSISTOR HIGH-VOLTAGE SWITCHING APPLICATIONS FEATURES 1 * Adoption of FBET, MBIT processes * High breakdown voltage and large current capacity * Fast switching time * Very small size marking it easy to provide high - density,

Transistors specification with hybrid

Abstract: TRANSISTOR MARKING CODE R2A UMT3906 PN3904 2N3906 MMST3906 SST3906 T106 T10D T116
Contextual Info: Transistors PNP General Purpose Transistor I U MT3906/SST3906/M M ST3906/RXT3906/2N3906 •Features 1 BVceo< - 4 0 V le— 1mA) 2 ) Complements the UMT3904/SST3904/MMST3904/RXT3904/PN3904. # External dimensions (Units : mm) U M T3906 •P ackage, marking and packaging specifications

Contextual Info: HAL114 Unipolar Hall Switch IC in CMOS technology Marking Code Type Introduction The HAL114 is a Hall switch produced in CMOS technol­ ogy. The sensor includes a temperature-compensated Hall plate, a Schmitt trigger, and an open-drain output transistor see Fig. 2 .

Contextual Info: BC857B Transistors PNP General Purpose Transistor I BC857B • I External dimensions Unite : mm Feature* 1 ) B V ceoC — 4 5 V ( lc = — 1m A) 2 ) Complements the BC847B. • Package, marking, and packaging specifications T ype B C 657B Package SST3 M a rk in g

sot-23 Marking 3D

Abstract: BC856 sot-23 MARKING CODE 3d 3D marking sot23 3H SOT23 BC856B SOT23 BC856A BC856B BC857 BC858
Contextual Info: PNP General Purpose Transistor: BC856/857/858 Features: t
Low current max.100mA t
Low voltage (max.65v) Applications: t
SOT-23 Ordering Information Type No. Marking: Package Code: BC856A/B 3D/3A/3B SOT-23 BC857A/B/C 3H/3E/3F/3G SOT-23 BC858A/B/C 3J/3K/3L

Contextual Info: Transistors PNP G eneral Purpose Transistor BC858BW/BC858B I •F e a tu r e * •E x te rn a l dimensions Units : mm 1 ) B V ceo C — 3 0 V ( l c = — 1m A ) 2 ) Complements the BC848B/BC848BW. # Packag a. marking and packaging «pacifications Type BCÔ58BW

Contextual Info: Transistors SST6838 NPN General Purpose Transistor I SST6838 ♦ F e a tu re s ♦E x te rn a l dim ensions Units : mm 1 ) B V ceo < 4 0 V ( lc = 1 m A ) 2 ) Complements the SST6839. ♦ P a c k a g e , marking, and packaging specifications Type SST6838

SC74A

Abstract: 74a diode 2SA20 chdtc114e transistor circuit BD NPN transistors CHUMH11 marking FG9 CIRCUIT79
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Marking Equivalent Collector Collector to Current Emitter Voltage IC VCEO V mA DC Current Gain HFE @ VCE / IC Min-Max V / mA Saturation Voltage Collector to Emitter VCE SAT @ IC / IB

transistor equivalent table

Abstract: NPN PNP sot-563 sc74a A6 MARKING SC-74 BD NPN transistors transistor fg 680 gd marking H6 sot 23 SOT-353 MARKING G2 SC-88A npn SC-74 H2
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Marking Equivalent Collector Collector to DC Current Gain Current Emitter Voltage HFE @ VO / IO VCC IO V mA Min-Max V / mA Saturation Voltage Bias Collector to Resistor

e06 marking

Abstract: BF56 a0335 F820S irf 2117
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • ÔSEOD^b OOOTMn BF 820 S *BF 822 S ■¡riU ilFM KIM electronic CreatM Ted>noido«s T - 21-17 Silicon NPN Epitaxial Planar Transistors Applications: For telephone sets, telecommunication circuits, hybrid circuits, video-B-class power

transistor equivalent table

Abstract: transistor marking CS x1 transistor Silicon Transistor SOT-563 SC-88 free pdf transistor bs 200 transistor Transistor marking 0.5 SOT563
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Marking Collector to Emitter Voltage Collector DC Current Gain Current Saturation Voltage Collector to Emitter HFE @ VCE / IC VCE SAT @ IC / IB Typical Gain Bandwidth

921TS

Abstract: transistor BF 235 DIN41869 marking code C4 Sot 23-5 S920T
Contextual Info: TELEFUNKEN ELECTRONIC 17E I • a^SOG^b OOO^blR 5 BIALGG S 920 TS • S 922 TS ÜK1 e le c tro n ic Cre^tfwTechrtoJog*j Silicon NPN Epitaxial Planar RF Transistors ^ ^ Applications: For telephone sets, telecommunication circuits, hybrid circuits, video driver and power

D 823 transistor

Abstract: BF56 BF821S
Contextual Info: TELEFUNKEN ELECTRONIC 17E » • a'lSDQ^b 0 0 0 ^ 2 3 IALGG BF 821 S BF 823 S TTllUlFüiKIKIKI electronic C rM tM "ftchrtotoQtes Silicon PNP Epitaxial Planar Transistors A p p lica tio n s: For telephone sets, telecommunication circuits, hybrid circuits, video-B-class power

transistor equivalent table

Abstract: TRANSISTOR sot-563 SOT-563 PNP Silicon Transistor Dual PNP Transistor transistor marking T2 SC-88 CHT4403SPT dual pnp
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Marking Collector to Emitter Voltage Collector DC Current Gain Current Saturation Voltage Collector to Emitter HFE @ VCE / IC VCE SAT @ IC / IB Typical Gain Bandwidth

zener diode 1n4148

Abstract: diode zener 1N4148 h8 diode zener 1n4148 zener diode LM199
Contextual Info: LTZ1000/LTZ1000A Ultra Precision Reference FEATURES n n n n n n n n DESCRIPTION 1.2µVP-P Noise 2µV/√kHr Long-Term Stability Very Low Hysteresis 0.05ppm/°C Drift Temperature Stabilized 400°C/W Thermal Resistance for LTZ1000A Reduces Insulation Requirements

lt0412

Abstract: h8 diode zener LTZ1000 ltz1000 application notes diode zener 1N4148 LM199
Contextual Info: LTZ1000/LTZ1000A Ultra Precision Reference Features Description 1.2µVP-P Noise 2µV/√kHr Long-Term Stability n Very Low Hysteresis n 0.05ppm/°C Drift n Temperature Stabilized n 400°C/W Thermal Resistance for LTZ1000A Reduces Insulation Requirements n Specified for –55°C to 125°C Temperature Range