TRANSISTOR MARKING KRC Search Results

Contextual Info: Transistors SMD Type Epitaxial Planar NPN Transistor KRC103S SOT-23 • Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● With Built-in Bias Resistors. 0.4 3 1 0.55 ● Reduce a Quantity of Parts and Manufacturing Process. +0.1 1.3-0.1 +0.1 2.4-0.1 ● Simplify Circuit Design.

KRC457

Abstract: R2K10
Contextual Info: SEMICONDUCTOR KRC457 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES ・With Built-in Bias Resistors. E M ・Simplify Circuit Design. ・Reduce a Quantity of Parts and Manufacturing Process.

Contextual Info: SEMICONDUCTOR KRC281S~KRC286S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. E B L L 3 H G A 2 1 J DIM A B C D E G H J K L M N P MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20

Contextual Info: SEMICONDUCTOR KRC281U~KRC286U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES ・High emitter-base voltage : VEBO=25V Min ・High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) ・Low on resistance : Ron=1Ω(Typ.) (IB=5mA)

KRC286U

Abstract: KRC281U KRC282U KRC283U KRC284U KRC285U
Contextual Info: SEMICONDUCTOR KRC281U~KRC286U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES E High emitter-base voltage : VEBO=25V Min B M High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) Low on resistance : Ron=1 (Typ.) (IB=5mA)

TRANSISTOR MARKING NK

Abstract: KRC410V KRC412V KRC411V KRC413V KRC414V
Contextual Info: SEMICONDUCTOR KRC410V~KRC414V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B ᴌWith Built-in Bias Resistors. ᴌSimplify Circuit Design. G A D 2 ᴌReduce a Quantity of Parts and Manufacturing Process.

KRC281S

Contextual Info: SEMICONDUCTOR KRC281S~KRC286S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES ・High emitter-base voltage : VEBO=25V Min ・High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) ・Low on resistance : Ron=1Ω(Typ.) (IB=5mA)

KRC285U

Abstract: KRC286U audio transistor KRC281U KRC282U KRC283U KRC284U
Contextual Info: SEMICONDUCTOR KRC281U~KRC286U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES ・High emitter-base voltage : VEBO=25V Min ・High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) ・Low on resistance : Ron=1Ω(Typ.) (IB=5mA)

KRC281S

Abstract: KRC282S KRC283S KRC284S KRC285S KRC286S
Contextual Info: SEMICONDUCTOR KRC281S~KRC286S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES E B L L High emitter-base voltage : VEBO=25V Min 2 A H With Built-in Bias Resistors. 3 G Low on resistance : Ron=1 (Typ.) (IB=5mA)

The 2002 is a COMMON BASE transistor

Abstract: high hfe transistor KRC681T KRC682T KRC683T KRC684T KRC685T KRC686T resistor 4.7 k
Contextual Info: SEMICONDUCTOR KRC681T~KRC686T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. E B FEATURES 1 High emitter-base voltage : VEBO=25V Min G High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) B C 2 F A Low on resistance : Ron=1 (Typ.) (IB=5mA)

KRC881T

Abstract: KRC882T KRC883T KRC884T KRC885T KRC886T MTB marking
Contextual Info: SEMICONDUCTOR KRC881T~KRC886T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. E K FEATURES 1 6 G 2 5 G High emitter-base voltage : VEBO=25V Min K B 3 4 DIM A B C D E A Low on resistance : Ron=1 (Typ.) (IB=5mA)

Contextual Info: SEMICONDUCTOR KRC881T~KRC886T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. E K FEATURES 1 6 G 2 5 G High emitter-base voltage : VEBO=25V Min K B 3 4 DIM A B C D E A Low on resistance : Ron=1 (Typ.) (IB=5mA)

KRC281S

Abstract: KRC282S KRC283S KRC284S KRC285S KRC286S MTB marking
Contextual Info: SEMICONDUCTOR KRC281S~KRC286S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. E B L L 3 H G A 2 1 C J DIM A B C D E G H J K L M N P MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20

Contextual Info: SEMICONDUCTOR KRC881T~KRC886T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. E K 6 G 2 5 3 4 D EQUIVALENT CIRCUIT TOP VIEW I 6 5 1. 2. 3. 4. 5. 6. Q1 Q2 E 1 2 0.95 H I _ 0.05 0.16 + 0.00-0.10 J 0.25+0.25/-0.15

MRB 154

Contextual Info: SEMICONDUCTOR KRC681T~KRC686T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. E B FEATURES ・High emitter-base voltage : VEBO=25V Min ・High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) ・Low on resistance : Ron=1Ω(Typ.) (IB=5mA)

Contextual Info: SEMICONDUCTOR KRC119S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES ・With Built-in Bias Resistors. E B L L ・Simplify Circuit Design. D ・Reduce a Quantity of Parts and Manufacturing Process.

KRC455

Abstract: 454 marking CA KRC456 KRC451 KRA451 KRA455 KRC452 KRC453 KRC454 KRC457
Contextual Info: SEMICONDUCTOR KRC451~457 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES M B M With Built-in Bias Resistors. D Reduce a Quantity of Parts and Manufacturing Process.

TRANSISTOR MARK NB

Abstract: KRC641T KRC642T KRC643T KRC644T KRC645T KRC646T transistor mark NF
Contextual Info: SEMICONDUCTOR KRC641T~KRC646T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPPLICATION. E B FEATURES 1 ᴌWith Built-in Bias Resistors. B G ᴌSimplify Circuit Design. 4 3 I C EQUIVALENT CIRCUIT

krc451

Contextual Info: SEMICONDUCTOR KRC451~457 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES M B M With Built-in Bias Resistors. D A J 2 Simplify Circuit Design. 3 1 G Reduce a Quantity of Parts and Manufacturing Process.

Contextual Info: SEMICONDUCTOR KRC451~457 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E B M FEATURES ・With Built-in Bias Resistors. M D G A J 2 ・Simplify Circuit Design. ・Reduce a Quantity of Parts and Manufacturing Process.

KRC457

Abstract: KRC455 KRC456 KRC453 R1 II
Contextual Info: SEMICONDUCTOR KRC451~457 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES M B M ・With Built-in Bias Resistors. D A J 2 ・Simplify Circuit Design. G ・Reduce a Quantity of Parts and Manufacturing Process.

Contextual Info: Diodes Transistors SMD Type Product specification KRC103S SOT-23 • Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● With Built-in Bias Resistors. 0.4 3 1 0.55 ● Reduce a Quantity of Parts and Manufacturing Process. +0.1 1.3-0.1 +0.1 2.4-0.1 ● Simplify Circuit Design.

NPN transistor marking NY

Contextual Info: SEMICONDUCTOR KRC231S~KRC235S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR E B L FEATURES L 2 H A ・Simplify Circuit Design. 3 G ・With Built-in Bias Resistors. D SWITCHING APPLICATION. AUDIO MUTING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.

KRC231S

Abstract: KRC232S KRC233S KRC234S KRC235S
Contextual Info: SEMICONDUCTOR KRC231S~KRC235S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR E B L FEATURES L 2 H A ・Simplify Circuit Design. 3 G ・With Built-in Bias Resistors. D SWITCHING APPLICATION. AUDIO MUTING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.