rf amplifier marking catalog
Abstract: No abstract text available
Text: Philips Semiconductors; MX0912B351Y; NPN microwave power transistor Select your country Consumer Products Professional products Search Philips Semiconductors Home Product Information MX0912B351Y; NPN microwave power transistor General Description Blockdiagram
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MX0912B351Y;
MX0912B351Y
01-Jul-98)
rework/mx0912b351y
rf amplifier marking catalog
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All similar transistor
Abstract: transistor marking AM philips transistor marking
Text: Philips Semiconductors; MX1011B200Y; Microwave power transistor Select your country Consumer Products Professional products Search Philips Semiconductors Home Product Information MX1011B200Y; Microwave power transistor General Description Blockdiagram Products & packages
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MX1011B200Y;
MX1011B200Y
01-Jul-98)
rework/mx1011b200y
All similar transistor
transistor marking AM
philips transistor marking
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Philips top MARKING CODE
Abstract: No abstract text available
Text: Philips Semiconductors; MX1011B700Y; NPN microwave power transistor Select your country Consumer Products Professional products Search Philips Semiconductors Home Product Information MX1011B700Y; NPN microwave power transistor General Description Blockdiagram
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MX1011B700Y;
MX1011B700Y
01-Jul-98)
rework/mx1011b700y
Philips top MARKING CODE
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Untitled
Abstract: No abstract text available
Text: NJF6510 N-CHANNEL, J-FET DEPLETION MODE TRANSISTOR Screened in reference to MIL-PRF-19500 DESCRIPTION The NJF6510 is ideal for functioning as a VHF and a small signal amplifier. This part number is also an equivalent to the MX2N3822. Important: For the latest information, visit our website http://www.microsemi.com.
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NJF6510
MX2N3822.
MIL-PRF-19500
MIL-PRF-19500
O-206AF)
T4-LDS-0260,
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Untitled
Abstract: No abstract text available
Text: NJF6510 N-CHANNEL, J-FET DEPLETION MODE TRANSISTOR Screened in reference to MIL-PRF-19500 DESCRIPTION The NJF6510 is ideal for functioning as a VHF and a small signal amplifier. This part number is also an equivalent to the MX2N3822. Important: For the latest information, visit our website http://www.microsemi.com.
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NJF6510
MIL-PRF-19500
NJF6510
MX2N3822.
MIL-PRF-19500
O-206AF)
T4-LDS-0260,
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MS2N3821
Abstract: No abstract text available
Text: NJF6514 and NJF6515 N-Channel, J-FET Depletion Mode Transistor Screened in reference to MIL-PRF-19500 DESCRIPTION The NJF6514 and NJF6515 are ideal for functioning as very high frequency VHF small signal amplifiers. The NJF6514 part number is similar to the MX2N3821. The NJF6515 part number
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NJF6514
NJF6515
MIL-PRF-19500
NJF6515
MX2N3821.
MS2N3821.
MS2N3821
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339 marking code transistor
Abstract: BP317 MX1011B430W SC15
Text: DISCRETE SEMICONDUCTORS DATA SHEET MX1011B430W NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor
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MX1011B430W
SCA53
127147/00/02/pp8
339 marking code transistor
BP317
MX1011B430W
SC15
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MXTA42
Abstract: No abstract text available
Text: MXTA42 NPN Plastic-Encapsulate Transistor SOT-89 1 1. BASE 2. COLLECTOR 3. EMITTER Features: 2 3 *Low Collector-Emitter Saturation Voltage *High Breakdown Voltage M aximum R atings TA=25 C unless otherwise noted Rating Collector-Emitter Voltage Collector-Base Voltage
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MXTA42
OT-89
30MHz)
03-Sep-2013
OT-89
500TYP
MXTA42
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fr5 sot89
Abstract: sot89 fr5 MXTA42 a42 sot-89 we 510
Text: MXTA42 NPN Plastic-Encapsulate Transistor SOT-89 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 M aximum R atings TA=25 C unless otherwise noted Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO
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MXTA42
OT-89
MXTA42
20MHz
OT-89
500TYP
fr5 sot89
sot89 fr5
a42 sot-89
we 510
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Untitled
Abstract: No abstract text available
Text: MXTA42 NPN Plastic-Encapsulate Transistor SOT-89 * “G” Lead Pb -Free 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 M aximum R atings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous
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MXTA42
OT-89
MXTA42
20MHz
OT-89
500TYP
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Y parameters of transistors
Abstract: power transistor transistors equivalents transistor equivalent table MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor 2N2219 data sheet 1721E50R MARKING 41B transistor marking pl y1 marking code transistor similar 2N2219 transistor
Text: Philips Semiconductors RF & Microwave Power Transistors General MARKING CODES FOR RF POWER TRANSISTORS MARKING CODES FOR MICROWAVE TRANSISTORS For the purposes of matched pair applications, RF power MOS transistors are marked with a code that indicates their gate-source voltage range see Table 8 .
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MC3403
2N2219
1N4148
MBC775
Y parameters of transistors
power transistor transistors equivalents
transistor equivalent table
MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT
transistor 2N2219 data sheet
1721E50R
MARKING 41B
transistor marking pl
y1 marking code transistor
similar 2N2219 transistor
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transistor NF marking code
Abstract: transistor a102
Text: UNISONIC TECHNOLOGIES CO., LTD 88NXX CMOS IC BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR DESCRIPTION The UTC 88NXX is a high-precision voltage detector developed basing on CMOS technology. The detection voltage is fixed internally. A time delayed reset can be accomplished with an external
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88NXX
88NXX
QW-R502-368
transistor NF marking code
transistor a102
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transistor a102
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 88NXX CMOS IC BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR DESCRIPTION The UTC 88NXX is a high-precision voltage detector developed basing on CMOS technology. The detection voltage is fixed internally. A time delayed reset can be accomplished with an external
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88NXX
88NXX
QW-R502-368
transistor a102
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transistor a102
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 88NXX CMOS IC BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR DESCRIPTION The UTC 88NXX is a high-precision voltage detector developed basing on CMOS technology. The detection voltage is fixed internally. A time delayed reset can be accomplished with an external
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88NXX
88NXX
QW-R502-368
transistor a102
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MBT35200MT1
Abstract: No abstract text available
Text: MBT35200MT1 High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications http://onsemi.com A Device of the mX Family 35 VOLTS 2.0 AMPS PNP TRANSISTOR MAXIMUM RATINGS TA = 25°C Rating Symbol Max Unit Collector-Emitter Voltage
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MBT35200MT1
r14525
MBT35200MT1/D
MBT35200MT1
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marking G3
Abstract: MMBT6589T1
Text: MMBT6589T1 High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications http://onsemi.com A Device of the mX Family 30 VOLTS 2.0 AMPS PNP TRANSISTOR MAXIMUM RATINGS TA = 25°C Symbol Max Unit Collector-Emitter Voltage
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MMBT6589T1
r14525
MMBT6589T1/D
marking G3
MMBT6589T1
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1721E50R
Abstract: Marking Codes Philips MARKING CODE 2327E40R marking codes transistors LAE4001R transistor 502 r8 marking marking Code philips
Text: Philips Semiconductors Microwave Transistors Marking codes MARKING CODES The microwave transistors in this book are normally marked with manufacturer’s name or trademark, type designation and lot identification code. If space on the transistor package is insufficient for full type designation, the following marking
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LAE4001R
LAE4002S
LBE2003S
LBE2009S
LCE2009S
LEE1015T
LTE21009R
LTE21015R
LTE21025R
LTE42005S
1721E50R
Marking Codes
Philips MARKING CODE
2327E40R
marking codes transistors
transistor 502
r8 marking
marking Code philips
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Untitled
Abstract: No abstract text available
Text: T e m ic S 897 T TELEFUNKEN Semiconductors Silicon NPN planar RF transistor Applications High gain linear broadband RF amplifier. Features • • Small feedback capacitance Low noise figure • Low cross modulation Dimensions in mm i aoa • Marking: 897
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bss149
Abstract: No abstract text available
Text: BSS 149 I nf ine on technologies SIPMOS Small-Signal Transistor • • • • • • • VDS 200 V 0.35 A ^DS on 3.5 Cl N channel Depletion mode High dynamic resistance Available grouped in VQSOh) ID Type Ordering Code Tape and Reel Information Pin C onfigu ration Marking
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Q62702-S623
Q67000-S252
E6325:
SS149
S35bQ5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
bss149
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Untitled
Abstract: No abstract text available
Text: 7 Philips Semiconductors = -3 3 - & Preliminary specification NPN silicon planar epitaxial microwave power transistor MX1011B400W SbE D PHILIPS INTERNATIONAL 711002b ODMbBbS ‘iSb H P H I N FEATURES DESCRIPTION APPLICATIONS • Suitable for short and medium
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MX1011B400W
711002b
ns/10%
711Qfl2b
D04b3b7
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transistor abe 438
Abstract: sti 7110 F103G marking 33a on semiconductor microwave transistor 03 npn power amplifier circuit NPN Silicon Epitaxial Planar Transistor MX1011B400W FO-91 TRANSISTOR package FO-91
Text: “7 — 3 3 -/5 ' Prelim inary specification Philips Sem iconductors NPN silicon planar epitaxial microwave power transistor PHILIPS INTERNATIONAL MX1011B400W 5bE J> 711Qfl2b 00Mb3b2 'ISb « P H I N FEATURES DESCRIPTION APPLICATIONS • Suitable for short and medium
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-T-33-AS'
MX1011B400W
711Qfl2b
00Mb3b2
us/10%
FO-91B
03GHz.
MCU133
711002b
transistor abe 438
sti 7110
F103G
marking 33a on semiconductor
microwave transistor 03
npn power amplifier circuit
NPN Silicon Epitaxial Planar Transistor
MX1011B400W
FO-91 TRANSISTOR package
FO-91
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN microwave power transistor MX1011B430W FEATURES QUICK REFERENCE DATA • Suitable for short and medium pulse applications up to 500 ns/10% Microwave performance up to Tmb = 25 °C in a common base class C broadband amplifier.
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ns/10%
MX1011B430W
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MXR9745T1/D SEMICONDUCTOR TECHNICAL DATA Advance Information MXR9745T1 The RF Small Signal Line Silicon L atera l FET N-Channel Enhancement-Mode MOSFET 31.5 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET Designed for use in low voltage, moderate power amplifiers such as portable
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MXR9745T1/D
MXR9745T1
OT-89)
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TRANSISTOR 2N338
Abstract: 2N338 2N337 SFWM marking YJ AM 2N3384 2N338 JAN zn338 2 TMT 15-4
Text: iiU M 'U 'ivuw / gva ¿2 H o v te ttr 1971 SUPERSEDING _ Û1LL.-0-lÖÖÖO/ÖWD 4 Mafflh tOM MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSBTOR, NPN, SILICON, LOW-POWER TYPES 2N337 AND 2N338 This specification la mandatory for use bv all Departmeats and Agencies of the Department of Defense.
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-8-19500/69K
MIL-S-19500/89D
2N337
2N338
MEL-8-19500,
MEL-S-19500
TRANSISTOR 2N338
2N338
SFWM
marking YJ AM
2N3384
2N338 JAN
zn338
2 TMT 15-4
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