TRANSISTOR MARKING MX Search Results

1721E50R

Abstract: Marking Codes Philips MARKING CODE 2327E40R marking codes transistors LAE4001R transistor 502 r8 marking marking Code philips
Contextual Info: Philips Semiconductors Microwave Transistors Marking codes MARKING CODES The microwave transistors in this book are normally marked with manufacturer’s name or trademark, type designation and lot identification code. If space on the transistor package is insufficient for full type designation, the following marking

Contextual Info: T e m ic S 897 T TELEFUNKEN Semiconductors Silicon NPN planar RF transistor Applications High gain linear broadband RF amplifier. Features • • Small feedback capacitance Low noise figure • Low cross modulation Dimensions in mm i aoa • Marking: 897

bss149

Contextual Info: BSS 149 I nf ine on technologies SIPMOS Small-Signal Transistor • • • • • • • VDS 200 V 0.35 A ^DS on 3.5 Cl N channel Depletion mode High dynamic resistance Available grouped in VQSOh) ID Type Ordering Code Tape and Reel Information Pin C onfigu ration Marking

rf amplifier marking catalog

Contextual Info: Philips Semiconductors; MX0912B351Y; NPN microwave power transistor Select your country Consumer Products Professional products Search Philips Semiconductors Home Product Information MX0912B351Y; NPN microwave power transistor General Description Blockdiagram

All similar transistor

Abstract: transistor marking AM philips transistor marking
Contextual Info: Philips Semiconductors; MX1011B200Y; Microwave power transistor Select your country Consumer Products Professional products Search Philips Semiconductors Home Product Information MX1011B200Y; Microwave power transistor General Description Blockdiagram Products & packages

Philips top MARKING CODE

Contextual Info: Philips Semiconductors; MX1011B700Y; NPN microwave power transistor Select your country Consumer Products Professional products Search Philips Semiconductors Home Product Information MX1011B700Y; NPN microwave power transistor General Description Blockdiagram

Contextual Info: 7 Philips Semiconductors = -3 3 - & Preliminary specification NPN silicon planar epitaxial microwave power transistor MX1011B400W SbE D PHILIPS INTERNATIONAL 711002b ODMbBbS ‘iSb H P H I N FEATURES DESCRIPTION APPLICATIONS • Suitable for short and medium

transistor abe 438

Abstract: sti 7110 F103G marking 33a on semiconductor microwave transistor 03 npn power amplifier circuit NPN Silicon Epitaxial Planar Transistor MX1011B400W FO-91 TRANSISTOR package FO-91
Contextual Info: “7 — 3 3 -/5 ' Prelim inary specification Philips Sem iconductors NPN silicon planar epitaxial microwave power transistor PHILIPS INTERNATIONAL MX1011B400W 5bE J> 711Qfl2b 00Mb3b2 'ISb « P H I N FEATURES DESCRIPTION APPLICATIONS • Suitable for short and medium

Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor MX1011B430W FEATURES QUICK REFERENCE DATA • Suitable for short and medium pulse applications up to 500 ns/10% Microwave performance up to Tmb = 25 °C in a common base class C broadband amplifier.

Contextual Info: NJF6510 N-CHANNEL, J-FET DEPLETION MODE TRANSISTOR Screened in reference to MIL-PRF-19500 DESCRIPTION The NJF6510 is ideal for functioning as a VHF and a small signal amplifier. This part number is also an equivalent to the MX2N3822. Important: For the latest information, visit our website http://www.microsemi.com.

Contextual Info: NJF6510 N-CHANNEL, J-FET DEPLETION MODE TRANSISTOR Screened in reference to MIL-PRF-19500 DESCRIPTION The NJF6510 is ideal for functioning as a VHF and a small signal amplifier. This part number is also an equivalent to the MX2N3822. Important: For the latest information, visit our website http://www.microsemi.com.

MS2N3821

Contextual Info: NJF6514 and NJF6515 N-Channel, J-FET Depletion Mode Transistor Screened in reference to MIL-PRF-19500 DESCRIPTION The NJF6514 and NJF6515 are ideal for functioning as very high frequency VHF small signal amplifiers. The NJF6514 part number is similar to the MX2N3821. The NJF6515 part number

339 marking code transistor

Abstract: BP317 MX1011B430W SC15
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET MX1011B430W NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor

MXTA42

Contextual Info: MXTA42 NPN Plastic-Encapsulate Transistor SOT-89 1 1. BASE 2. COLLECTOR 3. EMITTER Features: 2 3 *Low Collector-Emitter Saturation Voltage *High Breakdown Voltage M aximum R atings TA=25 C unless otherwise noted Rating Collector-Emitter Voltage Collector-Base Voltage

Contextual Info: MXTA42 NPN Plastic-Encapsulate Transistor SOT-89 * “G” Lead Pb -Free 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 M aximum R atings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous

Y parameters of transistors

Abstract: power transistor transistors equivalents transistor equivalent table MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor 2N2219 data sheet 1721E50R MARKING 41B transistor marking pl y1 marking code transistor similar 2N2219 transistor
Contextual Info: Philips Semiconductors RF & Microwave Power Transistors General MARKING CODES FOR RF POWER TRANSISTORS MARKING CODES FOR MICROWAVE TRANSISTORS For the purposes of matched pair applications, RF power MOS transistors are marked with a code that indicates their gate-source voltage range see Table 8 .

transistor NF marking code

Abstract: transistor a102
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 88NXX CMOS IC BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR  DESCRIPTION The UTC 88NXX is a high-precision voltage detector developed basing on CMOS technology. The detection voltage is fixed internally. A time delayed reset can be accomplished with an external

transistor a102

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 88NXX CMOS IC BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR  DESCRIPTION The UTC 88NXX is a high-precision voltage detector developed basing on CMOS technology. The detection voltage is fixed internally. A time delayed reset can be accomplished with an external

transistor a102

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 88NXX CMOS IC BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR  DESCRIPTION The UTC 88NXX is a high-precision voltage detector developed basing on CMOS technology. The detection voltage is fixed internally. A time delayed reset can be accomplished with an external

SOT23LF

Abstract: MMBT589LT1
Contextual Info: MOTOROLA Order this document by MMBT589LT1/D SEMICONDUCTOR TECHNICAL DATA High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications A Device of the mX  Family COLLECTOR 3 MMBT589LT1 30 Volts 2.0 Amps PNP Transistor

MBT35200MT1

Contextual Info: MBT35200MT1 High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications http://onsemi.com A Device of the mX Family 35 VOLTS 2.0 AMPS PNP TRANSISTOR MAXIMUM RATINGS TA = 25°C Rating Symbol Max Unit Collector-Emitter Voltage

marking G3

Abstract: MMBT6589T1
Contextual Info: MMBT6589T1 High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications http://onsemi.com A Device of the mX  Family 30 VOLTS 2.0 AMPS PNP TRANSISTOR MAXIMUM RATINGS TA = 25°C Symbol Max Unit Collector-Emitter Voltage

Contextual Info: MOTOROLA Order this document by MXR9745T1/D SEMICONDUCTOR TECHNICAL DATA Advance Information MXR9745T1 The RF Small Signal Line Silicon L atera l FET N-Channel Enhancement-Mode MOSFET 31.5 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET Designed for use in low voltage, moderate power amplifiers such as portable

TRANSISTOR 2N338

Abstract: 2N338 2N337 SFWM marking YJ AM 2N3384 2N338 JAN zn338 2 TMT 15-4
Contextual Info: iiU M 'U 'ivuw / gva ¿2 H o v te ttr 1971 SUPERSEDING _ Û1LL.-0-lÖÖÖO/ÖWD 4 Mafflh tOM MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSBTOR, NPN, SILICON, LOW-POWER TYPES 2N337 AND 2N338 This specification la mandatory for use bv all Departmeats and Agencies of the Department of Defense.